8MX72 Search Results

Contextual Info: IB M 1 1 M 8 8 4 5 H B 8M x 72 Chipkill Correct DRAM Module Features • 168 Pin JEDEC Standard, 8 Byte Dual In-line Memory Module • Optimized for ECC applications • System Performance Benefits: • 8Mx72 Chipkill Correct EDO DIMM -Buffered inputs except RAS, Data

Contextual Info: IBM11N8845HB Preliminary 8M x 72 Super EOS Module Features • 168 Pin JEDEC Standard, Unbuffered 8 Byte Dual In-line Memory Module • 8Mx72 Extended Data Out Page Mode DIMMs • • Provides Chip-Kill ECC protection transparently to an existing Single Error Correction (SEC) system

Contextual Info: IBM13N8739CC 8M x 72 2 Bank Unbuffered SDRAM Module Features • 168 Pin Unbuffered 8 Byte Dual In-line Memory Module • 8Mx72 Synchronous DRAM DIMM • Performance: j 10 j Units! CAS Latency 3 ! fcK I Clock Frequency jtcK j Clock Cycle iUc j Clock Access Time j

DIMM 72 pin out

Contextual Info: 8M x 72 Bit 3.3V BUFFERED EDO DIMM Extended Data Out EDO DRAM DIMM 72805sEDM2G39TK 168 Pin 8Mx72 EDO DIMM Buffered, 4k Refresh, 3.3V with SPD Pin Assignment General Description The 72805sEDM2G39TK is a 8Mx72 bit, 39 chip, 3.3V, 168 Pin DIMM module consisting of (36) 4Mx4

HYM7V73A801BTFG-75

Contextual Info: 8Mx72 bits PC133 SDRAM Unbuffered DIMM based on 8Mx8 SDRAM with LVTTL, 4 banks & 4K Refresh HYM7V73A801B F-Series DESCRIPTION The Hynix HYM7V73A801B F-Series are 8Mx72bits ECC Synchronous DRAM Modules. The modules are composed of nine 8Mx8bits CMOS Synchronous DRAMs in 400mil 54pin TSOP-II package, one 2Kbit EEPROM in 8pin TSSOP

72-XM

Abstract: 7270m
Contextual Info: WHITE /MICROELECTRONICS W PD 8M 72-XM D C 8Mx72 DRAM DIM M FEATURES GENERAL DESCRIPTION Perform ance range: ^RAC ^C A C ^RC ^H P C W PD8M 72-60M DC 60ns 20ns 110ns 30ns W PD8M 72-70M DC 70ns 25ns 130ns 33ns The W P D8M 72-XM D C is a 8M x 72 bit Dynamic RAM high

Contextual Info: PC100 Registered DIMM M377S0823FT3 M377S0823FT3 SDRAM DIMM Intel 1.2 ver. Base 8Mx72 SDRAM DIMM with PLL & Register based on 8Mx8, 4Banks 4K Ref., 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M377S0823FT3 is a 8M bit x 72 Synchronous

PC133 registered reference design

Contextual Info: M390S0823FT1 PC133 Registered DIMM M390S0823FT1 SDRAM DIMM 8Mx72 SDRAM DIMM with PLL & Register based on 8Mx8, 4Banks 4K Ref., 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M390S0823FT1 is a 8M bit x 72 Synchronous Dynamic RAM high density memory module. The Samsung

W3DG728V-D2

Contextual Info: White Electronic Designs W3DG728V-D2 64MB- 8Mx72 SDRAM W/ PLL, REGISTER AND SPD FEATURES DESCRIPTION The W3DG728V is a 8Mx72 synchronous DRAM module which consists of nine 8Mx8 SDRAM components in TSOP II package, two 18 bit Drive ICs for input control signal and

8735C

Contextual Info: IBM11N8645B IBM11N8735B IBM11N8645C IBM11N8735C 8M x 64/72 DRAM MODULE Features • 168 Pin JEDEC Standard, Unbuffered 8 Byte Dual In-line Memory Module • System Performance Benefits: -Non buffered for increased performance • 8Mx64, 8Mx72 Dual Bank Extended Data Out

64172

Contextual Info: IBM11N8645H IBM11N8735H 8M x 64/72 DRAM MODULE Features • 168 Pin JEDEC Standard, Unbuffered 8 Byte Dual In-line Memory Module • System Performance Benefits: -Non buffered for increased performance • 8Mx64, 8Mx72 Extended Data Out Page Mode DIMMs -Reduced noise 35 Vss/Vcc pins

M8730

Contextual Info: IBM11 M8730C IBM11 M8730CB 8M x 72 DRAM MODULE Features System Performance Benefits: • 168 Pin JEDEC Standard, 8 Byte Dual In-line Memory Module -Buffered inputs except RAS, Data -Reduced noise (32 Vss/Vcc pins) • 8Mx72 Dual Bank Fast Page Mode DIMM

SO DIMM 100 Pin Connector Pinout

Abstract: SO DIMM DRAM 144 Pin Connector Pinout
Contextual Info: IBM13M8734HCB Preliminary 8M x 72 1 Bank Registered SDRAM Module Features • 168-Pin Registered 8-Byte Dual In-Line Memory Module 8Mx72 Synchronous DRAM DIMM Performance: i -75A Reg. ; , j | DIMM CAS Latency I 4 : ; 133 100 MHz ! fd< i Clock Frequency i 7.5 ! 10.0 j ns !

Contextual Info: IBM11 M8735C IBM11 M8735CB 8M x 72 DRAM MODULE Features System Performance Benefits: • 168 Pin JEDEC Standard, 8 Byte Dual In-line Memory Module • 8Mx72 Dual Bank Extended Data Out Mode DIMM • Performance: : -50 : -60 : -70 RAS Access Tim e 50ns 60ns

WEDPNF8M722V-XBX

Contextual Info: White Electronic Designs WEDPNF8M722V-XBX 8Mx72 Synchronous DRAM + 16Mb Flash Mixed Module Multi-Chip Package ADVANCED* FEATURES n n Sector Architecture •One 16KByte, two 8KBytes, one 32KByte, and fifteen 64KBytes in byte mode Package: • 275 Plastic Ball Grid Array PBGA , 32mm x 25mm

Contextual Info: Discontinued 9/98 - Iasi order; 3/93 » las! ship IBM11M8735H 8M x 72 DRAM Module Features • 168-Pin JEDEC-Standard 8-Byte Dual In-Line Memory Module Optimized for ECC applications System Performance Benefits: • 8Mx72 Extended Data Out Mode DIMM -Buffered inputs (except RAS, Data)

WED3DG728V-D2

Contextual Info: WED3DG728V-D2 64MB- 8Mx72 SDRAM W/ PLL, REGISTER AND SPD FEATURES DESCRIPTION n Burst Mode Operation The WED3DG728V is a 8Mx72 synchronous DRAM module which consists of nine 8Meg x 8 SDRAM components in TSOP11 package, two 18- bit Drive ICs for input control signal and one

Contextual Info: WEDPN8M72V-XBX HI-RELIABILITY PRODUCT 8Mx72 Synchronous DRAM FEATURES GENERAL DESCRIPTION • High Frequency = 100, 125MHz The 64MByte 512Mb SDRAM is a high-speed CMOS, dynamic random-access ,memory using 5 chips containing 134,217,728 bits. Each chip is internally configured as a quad-bank DRAM with

Contextual Info: WEDPN8M72VR-XBX HI-RELIABILITY PRODUCT 8Mx72 Registered Synchronous DRAM *PRELIMINARY FEATURES GENERAL DESCRIPTION • Registered for enhanced performance of bus speeds of 66 MHz and 100 MHz The 64MByte 512Mb SDRAM is a high-speed CMOS, dynamic random-access ,memory using 5 chips containing 134,217,728

Contextual Info: WEDPN8M72VR-XBX HI-RELIABILITY PRODUCT 8Mx72 Registered Synchronous DRAM ADVANCED* FEATURES GENERAL DESCRIPTION • Registered for enhanced performance of bus speeds of 66 MHz and 100 MHz The 64MByte 512Mb SDRAM is a high-speed CMOS, dynamic random-access ,memory using 5 chips containing 134,217,728

Contextual Info: WEDPN8M72V-XBX 8Mx72 Synchronous DRAM FEATURES GENERAL DESCRIPTION n High Frequency = 100, 125MHz n Package: • 219 Plastic Ball Grid Array PBGA , 32 x 25mm n Single 3.3V ±0.3V power supply n Fully Synchronous; all signals registered on positive edge of system clock cycle

Contextual Info: KMM372V804CS DRAM MODULE KMM372V804CS Fast Page Mode 8M x 72 DRAM DIMM with ECC Using 4Mx16 & 4Mx4, 4K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM372V804C is a 8Mx72bits Dynamic RAM high density memory module. The Samsung KMM372V804C consists of eight 4Mx16bits & four 4Mx4bits CMOS DRAMs in

Contextual Info: M372V0805DT0-C DRAM MODULE Buffered 8Mx72 DIMM 4Mx16 & 4Mx4 base Revision 0.0 Dec. 1999 DRAM MODULE Revision History Version 0.0 (Dec. 1999) • The 4th generation of 64M components are applied to this module. M372V0805DT0-C M372V0805DT0-C DRAM MODULE M372V0805DT0-C Fast Page Mode

Contextual Info: M372V080 8 3DJ(T)0-C DRAM MODULE Buffered 8Mx72 DIMM (8Mx8 base) Revision 0.0 Dec. 1999 DRAM MODULE Revision History Version 0.0 (Dec. 1999) • The 4th. generation of 64M DRAM components are applied to this module. M372V080(8)3DJ(T)0-C M372V080(8)3DJ(T)0-C