1XGH17N100U1 Search Results
1XGH17N100U1 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
1xysContextual Info: Low CE sat IGBT with Diode High speed IGBT with Diode Symbol IXGH17N100U1 IXGH17N100AU1 Maximum Ratings Test Conditions T, = 25“C to 1 5 0 °C 1000 V T j = 25°C to 150°C; RGE = 1 M il 1000 V v GES Continuous ±20 V v GEM Transient ±30 V ^C25 Tc =25°C |
OCR Scan |
IXGH17N100U1 IXGH17N100AU1 O-247 1XGH17N100U1 11C6H IXQH17N180AU1 1xys |