1XYS Search Results

Contextual Info: □ 1XYS J Standard Power MOSFET IRFP450 V DSS D cont D DS(on) 500 V 14 A 0.40 Q N-Channel Enhancement Mode Symbol Test Conditions V DSS Tj = 25 °C to 150°C 500 V v DGR ^ 500 V +20 V +30 V Maximum Ratings = 25 °C to 150°C; RGS = 1 MQ V GS Continuous VGSM

Contextual Info: □ 1XYS Preliminary Data Sheet IGBT IXG A /IXG P12N 100U 1 IXGA/IXG P12N100AU1 Combi Pack Symbol Test Conditions V CES Tj = 25°C to 150°C 1000 V VCGR Tj = 25°C to 150°C; RGE= 1 Mi2 1000 V Continuous ±20 V V GEM Transient +30 V ^C25 Tc = 25°C 24 A ^C90

1xys

Contextual Info: Dimensions in inch and [mm] 1" = 25.4 mm 0MH1.02j 0.030(0.76] F □ ii 11 0.&30[P.76} 0.230(5-34] 0-500[12.70] 1XYS reserves the right to change limits, test conditions and dimensions. 1998 IXYS All rights reserved J - 7 Dimensions in inch and [mm] (1" = 25.4 mm)

Contextual Info: □ 1XYS IXFH 22N55 ’reliminary Data HiPerFET“Power MOSFET N-Channel Enhancement Mode Avlanche Rated, High dv/dt, Low t„ Symbol Test Conditions V*D SS ^ = 25°C to 150°C 550 V VDGR ^ = 25°C to 150°C; RGS = 1 M£2 550 V V GS Continuous ±20 V vw GSM

1xys

Abstract: IXTN36N50 36N50 E72873 IXTN36N45
Contextual Info: • 4bûbE2b 0001Û11 TTñ ■ I X Y □IXYS Pow er M O S F E T IX TN 36N 45 IX TN 36N 50 N-Channel Enhancement Mode Symbol Test Conditions V oss T j = 25°C to 150°C Maximum Ratings IXTN36N45 IXTN36N50 450 500 V V V oc* ^ = 25°C to 150°C ;R es=10kQ 500

dioda by 238

Abstract: 1xys 1XFM67N10 HiperFET IXFN50N25 IXFM50N20 IXFM6N90 IXFH40N30 IXFH10N100 IXFH11N100
Contextual Info: I X Y S CORP IñE D • 4bflb22b 0000573 1 ■ HiPerFETs_ The HiPerFET family of Power MOSFETs is designed to provide superior dv/dt performance while eliminating the need for discrete, fast recovery "free wheeling" rectifiers in a broad range of power switching

1xys

Abstract: IXTH50N10 IXTH20n60 to-247 IXTH25N50 HP 3800 IXTH12N50A IXTH25N45 IXTH12N50 IXTH25N50A IXTH15N80
Contextual Info: 268 f ï m € tt ft * Vds £ fé Vg s 11 13=25=0 Id less Pd Id s s Vgs th j * /CH Vd g (V) ( T a = 2 5 cC ) g fs Io(on) Ciss Coss Crss (*typ) (*typ) (*typ) (max) (max) (max) Vd s (pF) (pF) (pF) (V) V g s =0 Vgs min * /CH Vgs % '14 & F Ds(on) Vd s = or €

IXDP630 application note

Abstract: IXDP630
Contextual Info: □IXYS Data Sheet No. 91560B October 1991 INVERTER INTERFACE & DIGITAL DEADTIME GENERATOR for 3-PHASE PWM Controls IXDP630 / IXDP631 Features 5 Volt H C M O S Logic Im plem entation M aintains Low P o w er a t High S p ee d R e p la c e s Devices 1 0 - 1 2 S ta n d a r d S S I/M S I Logic

1xys

Abstract: ixfn48n50 smd diode 239
Contextual Info: V DSS HiPerFET Power MOSFETs N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Test Conditions v DSS ^ = 25°C to 150°C 500 500 ^ = 25°C to 150°C; RGS= 1 MQ 500 500 V ±20 ±20 V VGS T ransient U Tc u T0 1« dv/dt Maximum Ratings IXFK IXFN

1xys

Abstract: 90a944
Contextual Info: Ultra-Low VCE sat IGBT IXGN 60N60 VCES ^C25 VCE(sat) Symbol Test Conditions V CES TJ = 25°C to 150°C 600 V v CGR Tj = 25°C to 150°C; RGE = 1 MU 600 V V GES Continuous ±20 V v GEM Transient +30 V ^C25 Tc = 25°C 100 A ^C90 Tc = 90°C 60 A •cm Tc 200

B1180

Abstract: 1XYS DRIVE STEPPER MOTOR WITH CONTROLER D-6840
Contextual Info: T 'V " V C J[ 1 5 PRELIM INARY TE CHN IC AL INFORMATION* Data Sheet No. 915100C O ctober 1991 □ High Performance Dual PWM Microstepping Controler IXMS150 FEATURES Two com plete, synchronous PWMs. Wide frequency range: 20kHz to 400kHz. Com m and inp ut range: ±2.0 V fu ll scafe.

IXFN21N100

Contextual Info: HiPerFET Power MOSFET IXFN21N100 v DSS cont P DS(on) N-Channel Enhancement Mode High dv/dt, Low trr, HDMOS™ Family Symbol Test Conditions Maximum Ratings VDSS VDGR Tj = 25°C to 150°C 1000 V Tj = 25°C to 150°C; RGS = 1 Mi2 1000 V Ves vGSM Continuous

IXSE502PC

Abstract: Hearing Aid ARM processor based Circuit Diagram IXSE502 DOWN COUNTER using 8051 flow chart for automatic control of three phase motor using 8051 ic circuit diagram of digital hearing aid incremental shaft encoder 8086 microcomputer quadrature shaft decoder D-6840
Contextual Info: 4bE D • MböbEEb □□Gill? E BIIXY I X Y S CORP T ‘5 * ^ 3 ' O S □IXYS PRELIMINARY INFORMATION D atasheet No. 915502A October 1991 SHAFT ENCODER PERIPHERAL INTERFACE IXSE502 / IXSE503 Features Direct 2 channel Quadrature Inputs with Schmitt Trigger Circuitry

D 819

Contextual Info: □1XYS Preliminary Data Low VCE sat IGBT with Diode High Speed IGBT with Diode Combi Pack V CES IXGH 12N100U1 IXGH 12N100AU1 ^C25 V CE(sat) 1000 V 24 A 3.5 V 1000 V 24 A 4.0 V TO-247 SMD (Note 1) Symbol Test C onditions V CES Tj = 25°C to 150°C 1000 V

1xys

Contextual Info: □IXYS IXFN 58N50 IXFN 61N50 Preliminary Data Sheet V DSS IXFN 58N50 500V IXFN 61N50 500V High Current Power MOSFET p ^D25 DS on 58A 61A 85 m£2 75 mû N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings v DSS T j = 25°C to 150°C 500 V v DGR

1xys

Abstract: D-6840 D6840 VB035-08N04 VB024-08N04 VB035-04N04 VB010 VB015-10N04 VB035 VB024-04N04
Contextual Info: 4b E D • I X Y S Mbflb25b D00127S 1 «IXY CORP □IXYS PRELIMINARY TECHNICAL INFORMATION* Data Sheet No. 911014A November 1991 VB006 VB015 VB035 Single-Phase Diode Rectifier Bridge VB010 VB024 • C om pact Housing

B118Q

Abstract: full bridge igbt induction heating generator
Contextual Info: □ I X Y PRELIM INARY INFORMATION* Data Sheet No. 91503A October 1991 S ISOSMART HALF BRIDGE DRIVER CHIPSETS IXBD4410 / IXBD4411 / IXBD4412 / IXBD4413 Features 1200V or G reater Low- to High-Side Isolation 20ns Switching Time with 10OOpF Load; 100ns Switching Time with 10,000pF Load.

1xys

Contextual Info: Low CE sat IGBT with Diode High speed IGBT with Diode Symbol IXGH17N100U1 IXGH17N100AU1 Maximum Ratings Test Conditions T, = 25“C to 1 5 0 °C 1000 V T j = 25°C to 150°C; RGE = 1 M il 1000 V v GES Continuous ±20 V v GEM Transient ±30 V ^C25 Tc =25°C

1xys

Abstract: E153432 80N60A 80n60
Contextual Info: High Current IGBT 600 V 160 A 3V IXSN 80N60A YCES IC25 VCE sat Short Circuit SO A Capability Preliminary Data Symbol Test Conditions v CES v CGR Tj = 25°C to 150°C 600 V 1, = 25°C to 150°C; RGE = 1 M n 600 A Maximum Ratings v GES v GEM Continuous ±20