1XGP12N6 Search Results
1XGP12N6 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
1XGP12N6Contextual Info: Low V CE sat IGBT with Diode IXGP12N60U1 V CES CE(sat) Symbol Test Conditions v CES T j = 2 5 °C to 150CC 600 V V COR Tj = 25°C to 150°C; RQE = 1 MQ 600 V v GES Continuous ±20 V v GEM T ransient ±30 V ^C2S Tc = 25”C 24 A Maximum Ratings Tc = 90”C |
OCR Scan |
IXGP12N60U1 T0-220 B2-27 XOP12N60U1 B2-28 1XGP12N6 |