1Y SMD Search Results

ST03D 55

Abstract: DL03-58F1 DL03 DL04 SMD Transistor 1f ST02D-82 ST50D-27 AX06 AX078 VR-60B
Contextual Info: SURGE PROTECTORS Varistors Features 1. Bidirectional surge absorption is possible. 2. Low junction capacitance 3. SMD is available. 1Y Application 1. Telephone set surge absorption 2. Digital communications circuit surge absorption 3. ISDN terminal surge absorption

CMBT3903

Abstract: CMBT3904
Contextual Info: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company SOT-23 Formed SMD Package CMBT3903 CMBT3904 SILICON EPITAXIAL TRANSISTORS N–P–N transistors Marking CMBT3903 = 1Y CMBT3904 = 1A PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm

Contextual Info: SHINDENGEN Varistor SMD OUTLINE DIMENSIONS VRYA15 Case : 1Y Unit : mm RATINGS œAbsolute Maximum Ratings Item Storage Temperature Junction Temperature Average Rectified Forward Current Peak Surge Forward Current Symbol Tstg Tj IO I FSM œElectrical Characteristics (Tl=25Ž)

BF821

Abstract: BF823 transistors 10 KW
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BF821 BF823 SILICON EPITAXIAL TRANSISTORS P–N–P transistors Marking BF821 = 1W BF823 = 1Y PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm

Contextual Info: SHINDENGEN Varistor SMD OUTLINE DIMENSIONS VRYA6 Case : 1Y Unit : mm RATINGS œAbsolute Maximum Ratings Item Storage Temperature Junction Temperature Average Rectified Forward Current Peak Surge Forward Current Symbol Tstg Tj IO I FSM œElectrical Characteristics (Tl=25Ž)

CMBT3903

Abstract: CMBT3904 smd SA marking on IC
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBT3903 CMBT3904 SILICON EPITAXIAL TRANSISTORS N–P–N transistors Marking CMBT3903 = 1Y CMBT3904 = 1A PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm

Contextual Info: SHINDENGEN Varistor SMD OUTLINE DIMENSIONS VRYA6 Case : 1Y Unit : mm RATINGS ●Absolute Maximum Ratings Item Storage Temperature Junction Temperature Symbol Tstg Tj IO Average Rectified Forward Current Peak Surge Forward Current IFSM Conditions Ta = 40℃, Sine wave, R-load, Commercial frequency,

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBT3903 CMBT3904 SILICON EPITAXIAL TRANSISTORS N–P–N transisto rs Marking CMBT3903 = 1Y CMBT3904 = 1A PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BF821 BF823 SILICON EPITAXIAL TRANSISTORS P–N–P transisto rs Marking BF821 = 1W BF823 = 1Y PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm

VRYA15

Contextual Info: SHINDENGEN Varistor SMD OUTLINE DIMENSIONS VRYA15 Case : 1Y Unit : mm RATINGS ●Absolute Maximum Ratings Item Storage Temperature Junction Temperature Average Rectified Forward Current Peak Surge Forward Current Symbol Tstg Tj IO IFSM Conditions Ta = 40℃, Sine wave, R-load, Commercial frequency,

transistors 10 KW

Abstract: BF821 BF823
Contextual Info: Transys Electronics L I M I T E D SOT-23 Formed SMD Package BF821 BF823 SILICON EPITAXIAL TRANSISTORS P–N–P transistors Marking BF821 = 1W BF823 = 1Y PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 1

pin diagram of LED dot matrix display

Abstract: diagram of LED matrix display led display circuit diagram 5 x 8 led dot matrix
Contextual Info: American Opto Plus LED C/A5581-1Y G/W ™ 2.3 inch 58.4 mm height ™ Low power consumption ™ RoHS Compliance 2.3’’ 5 x 8 DOT MATRIX DISPLAY ™ Case mold type Package Dimensions Notes: 1. All dimensions are in millimeters (inches) 2. Tolerance is ± 0.25mm (0.01”) unless otherwise specified

U181

Abstract: VRYA15 smd tl 66
Contextual Info: バリスタ 面実装品（SMD） Varistor •外形寸法図 OUTLINE DIMENSIONS VRYA15 Package : 1Y 品名略号 6.6 ロット記号（例） 1.6 5 ±0.2 3.5 ±0.2 0.25 ±0.1 0.2 ±0.1 ソルダリングパッドの参考パターン 3.8 ±0.4 0.6 ±0.1

U181

Contextual Info: バリスタ 面実装品（SMD） Varistor •外形寸法図 OUTLINE DIMENSIONS VRYA6 Package : 1Y 品名略号 6.6 ロット記号（例） 1.6 5 ±0.2 3.5 ±0.2 0.25 ±0.1 0.2 ±0.1 ソルダリングパッドの参考パターン 3.8 ±0.4 0.6 ±0.1 1.0 ±0.1

Contextual Info: / t 'J * * ¡SU SA SMD Varistor W E tTSE! OUTLINE DIMENSIONS VRYA6 Package : 1Y t 5.0 6V IJ j j U f ä 'S ft p 00 LO (D 0.6 1.0 d) d) 2.5 l.i l.i # { u : mm w eb hx it For d e tails o f o u tlin e d im en sion s, re fe r to our w eb site or th e Se m ico n d u cto r Sh o rt Form C atalog. As fo r th e m arkin g, re fe r to

CDBCB455KCLY13-RO

Abstract: NE604N TA8104F SAFUW110MCAOTOO TA31132 LB455K fN350 AD TA31141 SAFJA35M4WC0Z00R03 CDBCB455KCLY21-R0
Contextual Info: Filters for Communication Equipment • Plastic Case Group Delay Flat Type Miniaturized Type CFULB_Y Series C onnection 1 : Input (2) O u lp ut g j G round (in m m) C F U L B 4 55 K B 4 Y -B 0 C F U L B 4 55 K C 4Y -B 0 C F U LB 455K D 1Y -B O C F U L B 4 55 K E 1 Y -B 0

JST SOT-23

Abstract: smd transistor l6 smd transistor 2y R135 VARISTOR 103 resistor pack diode zener c55 2Y DIODE SMD DIODE SMD J9 transistor c114 diode zener c72
Contextual Info: BOM STEVAL-ISS001V1 PART TYPE 1 DIODE SMD BAS16 SOT23 2 RESISTOR SMD 1K 1% 0.125W 100PPM PACK. 0805 3 RESISTOR SMD 2K2 1% 0.125W 100PPM PACK. 0805 4 RESISTOR SMD 3K3 1% 0.125W 100PPM PACK. 0805 5 RESISTOR SMD 4K7 1% 0.125W 100PPM PACK. 0805 6 RESISTOR SMD 10K 1% 0.125W 100PPM PACK. 0805

1y smd

Abstract: rectifier s1wb smd 1N
Contextual Info: RECTIFIER DIODES Low-frequency rectifying 1W SMD Low Noise Bridge Diodes 1V 1W Absolute Maximum Ratings VRM Type No. LN1WBA60 LN1VB60 LN2SB60 LN4SB60 LN6SB60 *:Ta IFSM IO Tstg Electrical Characteristics Tj Conditions Tc [V] [A] [˚C] [A] 600 1.1 1.2 1.6

sw dip-8

Abstract: 16DIP300 10SIP100 18DIP300 74HC253 XTAL 5V DIP8 DCR15 SW DIP8 CR21 T8000
Contextual Info: A B C D DB25 P1 FIN 8 1 14 2 15 3 16 4 17 5 18 6 19 7 20 8 21 9 22 10 23 11 24 12 25 13 BNC J1 500 500 R4 R5 RES05 500 7 RES05 RES05 D04 D2 VCC D04 D1 PARALLEL PORT R3 IN4148 R7 75 RES05 FIN D04 D3 6 SDO SCLK CSB SDI SCLK CSB SDI 5 SMDRC 0.1UF 0.1UF SMDRC

RM1Y

Contextual Info: Rectifier Diodes Low frequency rectifying 1W Lead type r Low Noise Bridge Diodes Absolute M axim um Ratings Type No. V rm lo [V] [A] 2S 1V 1W(SMD) Electrical C haracteristics Conditions If Ir (max) V r= V rm trr (max) e\t (max) [V] [A] [¿<A] lu s] Pc/w] PC/W] Pc/w]

VR-61B

Contextual Info: Surge Absorbers Varistors [Features] 1. Bi-directional surge absorption is possible. 2. Low junction capacitance 3. SMD is available. VR-61F1. VRYA6, 15 [Applications} 1. Telephone set surge absorption 2. Digital communications circuit surge absorption 3. ISDN terminal surge absorption

AX078

Contextual Info: Surge Absorbers Varistors F e a tu re s ] 1. Bidirectional surge absorption is possible. 2. Low junction capacitance 3. SMD is available. (VR -61F1, VR YA6, 15 (A p p lic a tio n s ] 1. Telephone set surge absorption 2. Digital com m unications circuit surge absorption

SN55LVDS31-SP

Contextual Info: SN55LVDS31-SP www.ti.com SLLSEB5 – MARCH 2012 HIGH-SPEED DIFFERENTIAL LINE DRIVER Check for Samples: SN55LVDS31-SP FEATURES 1 • • • • • • • • • • QML-V Qualified, SMD 5962-97621 Meet or Exceed the Requirements of ANSI TIA/EIA-644 Standard

Contextual Info: SN55LVDS31-SP www.ti.com SLLSEB5 – MARCH 2012 HIGH-SPEED DIFFERENTIAL LINE DRIVER Check for Samples: SN55LVDS31-SP FEATURES 1 • • • • • • • • • • QML-V Qualified, SMD 5962-97621 Meet or Exceed the Requirements of ANSI TIA/EIA-644 Standard