PA1910
Abstract: PA1910TE
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1910 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING PACKAGE DRAWING Unit : mm DESCRIPTION The µPA1910 is a switching device which can be driven 0.65–0.15 0.32 +0.1 –0.05 +0.1 The µPA1910 features a low on-state resistance and excellent
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PA1910
PA1910
PA1910TE
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PA1910
Abstract: PA1910TE SC-95
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1910 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING PACKAGE DRAWING Unit : mm DESCRIPTION The µPA1910 is a switching device which can be driven 0.65–0.15 0.32 +0.1 –0.05 +0.1 The µPA1910 features a low on-state resistance and excellent
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PA1910
PA1910
PA1910TE
SC-95
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transistor C 2290
Abstract: td 1410 NP34N03HLD NP34N03ILD
Text: PRELIMINARY PRODUCT INFORMATION MOS FIELD EFFECT TRANSISTOR NP34N03HLD,NP34N03ILD SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION This product is N-Channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION
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NP34N03HLD
NP34N03ILD
NP34N03HLD
O-251
O-252
transistor C 2290
td 1410
NP34N03ILD
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2SK2982
Abstract: 2SK2982-Z
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2982 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DRAWINGS Unit : mm This product is N-Channel MOS Field Effect Transistor designed for high TO-251 5.0±0.2 • Low On-Resistance 2.3±0.2
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2SK2982
O-251
2SK2982
2SK2982-Z
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Untitled
Abstract: No abstract text available
Text: SIEMENS BSP 17 SIPM O S Small-Signal Transistor • N channel • Enhancement mode • Avalanche rated • ^GS th = 2-1 4.0 V Type Vbs b f l DS(on) Package Marking BSP 17 50 V 3.2 A 0.1 ß SOT-223 BSP 17 Type BSP 17 Ordering Code Q67000-S220 Tape and Reel Information
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OT-223
Q67000-S220
E6327
fl235b05
235b05
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FLS2- transistor
Abstract: No abstract text available
Text: r i 7 ^ 7# . S G S - T H O M S O N M M » [ IC T [ » ! ] [ 1 §_ S D 1728 (T H 4 30 RF & MICROWAVE TRANSISTORS _ HF SSB APPLICATIONS • OPTIMIZED FOR SSB . 30 MHz . 50 VOLTS > IMD - 30 dB ■ GOLD METALLIZATION . COMMON EMITTER
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SD1728
TH430
SD1728
FLS2- transistor
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Untitled
Abstract: No abstract text available
Text: SIEMENS BUZ 71 A Not for new design SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type Vds b f f DS on Package Ordering Code BUZ 71 A 50 V 13 A 0.12 £2 TO-220 AB C67078-S1316-A3 Maxim um Ratings Parameter Symbol Continuous drain current
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O-220
C67078-S1316-A3
GPT05155
0235b05
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Untitled
Abstract: No abstract text available
Text: mu t i CEP4060A/CEB4060A March 1998 N-Channel Enhancement Mode Field Effect Transistor FEATURES • 6 0 V , 15 A , RDS ON =85m Q @ V gs=10V. • Super high dense cell design for extremely low R ds (on). • High power and current handling capability. • TO-220 & TO-263 package.
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CEP4060A/CEB4060A
O-22Q
O-263
P4060A/C
B4060A
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sd 431 transistor
Abstract: SD1422 transistor c5 178 x1 transistor voltronics jr M111 VK200 UNELCO 2 SD 427 transistor
Text: H /tw If /lt f f S 140CommerceDrive 1 i t Montgomeryville, PA18936-1013 Tel: 215 631-9840 IVI II III I y Till a I a » I \ß W I I MM — _ SD1422 P ro g re s s P o w e re d b y T ec h no log y RF & MICROWAVE TRANSISTORS 450 - 512MHz CLASS C, MOBILE APPLICATIONS
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512MHz
470MHz
SD1422
SD1422
450-512MHz
VK200
21/4-B
/18AWG
750pF
25VDC
sd 431 transistor
transistor c5 178
x1 transistor
voltronics jr
M111
UNELCO
2 SD 427 transistor
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mod400a
Abstract: No abstract text available
Text: CX*S ilicon ix Jm m MOD400A/400B/400C in c o r p o r a te d 4 N-Channel Enhancement Mode Transistors HERMETIC MODULE TOP VIEW PRODUCT SUMMARY PART NUMBER V BR DSS (V ) rDS(ON) •d <«> (A) LEADFORM OPTION MOD400A 400 0.35 15 Straight MOD400B 400 0.35 15
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MOD400A/400B/400C
MOD400A
MOD400B
MOD400C
10peration
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BSS110 Siemens
Abstract: No abstract text available
Text: SIEMENS BSS 110 SIPMOS Small-Signal Transistor • P channel • Enhancement mode 2 , sty • Logic Level I • ^GS th = -0.8.-2.0 V ^ 3 ^ VPT05158 Pin 1 Pin 2 S Type BSS 110 VDS -50 V b -0.17 A Type BSS 110 BSS 110 BSS 110 BSS 110 Ordering Code Q62702-S489
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Q62702-S489
Q62702-S500
Q67000-S278
Q62702-S568
E6288
E6296
E6325
BSS110 Siemens
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f3205
Abstract: No abstract text available
Text: interrii HRF3205, HRF3205S D a ta S h e e t 100A, 55V, 0.008 Ohm, N-Channel, Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode
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HRF3205,
HRF3205S
f3205
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Untitled
Abstract: No abstract text available
Text: f Z #7. SGS-THOMSON KM@[j[L[i TE»n©§_ SD 1726 T H A I 5 RF & MICROWAVE TRANSISTORS _ HF SSB APPLICATIONS • ■ ■ ■ ■ . ■ OPTIMIZED FOR SSB 30 MHz 50 VOLTS IMD -3 0 dB COMMON EMITTER GOLD METALLIZATION P out = 150 W PEP MIN. WITH 14 dB GAIN
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SD1726
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2SD774
Abstract: transistor 2sb734 transistor 2sd774 2SD774, transistor 2SB734 2SD774 transistor
Text: NEC NPN SILICON TRANSISTOR 2 SD 7 7 4 DESCRIPTION The 2S D 774 is designed for use in driver and output stages of PACKAGE DIMENSIONS audio frequency amplifiers. in millimeters inches FEATURES 7.0 MAX. (0 .27 5 MAX.) Py : 1.0 W (Ta = 25 °C) • High Totai Power Dissipation
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2SD774
2SD774
2SB734
transistor 2sb734
transistor 2sd774
2SD774, transistor
2SD774 transistor
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diode BFT 99
Abstract: ot 306 buz71a Transistor BFT 99 Transistor BFT 44 IR4060
Text: SIEMENS BUZ 71 A N ot fo r new design SiPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type BUZ 71 A Vbs 50 V b 13 A ^DS on 0.12 ß Package Ordering Code TO-220 AB C67078-S1316-A3 Maximum Ratings Parameter Symbol Values Continuous drain current
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O-220
C67078-S1316-A3
GPT35I55
diode BFT 99
ot 306
buz71a
Transistor BFT 99
Transistor BFT 44
IR4060
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DIODE WJ SOt23
Abstract: 7.a sot-23 marking BSs sot23
Text: S IE M F N S SIPMOS Small-Signal Transistors BSS 84 BSS 110 VDS = -5 0 V lD = - 0 .1 3 /- 0 .1 7 A ^DS on = 10 Q • P channel • Enhancem ent mode • Packages: SOT-23, TO-92 (BSS 110) SOT-23 (BSS 84) D S TO -92 ') Type Marking Ordering code for version on
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OT-23
OT-23,
62702-S
DIODE WJ SOt23
7.a sot-23
marking BSs sot23
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SD1728 M177
Abstract: Transistor TH430 D
Text: fry SGS-THOMSON ^ 7 / SD 1728 T H 4 3 0 RF & MICROWAVE TRANSISTORS _ HF SSB APPLICATIONS • ■ ■ ■ ■ . ■ OPTIMIZED FOR SSB 30 MHz 50 VOLTS IMD - 30 dB GOLD METALLIZATION COMMON EMITTER P o u t — 250 W PEP WITH 14.5 dB GAIN
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SD1728
TH430
SD1728
SD1728 M177
Transistor TH430 D
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Untitled
Abstract: No abstract text available
Text: BUZ72A Semiconductor Data Sheet June 1999 9A, 100 V, 0.250 Ohm, N-Channel Power MOSFET File Number 2262.2 Features • 9A, 100V This is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications such as switching regulators, switching converters, motor drivers,
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BUZ72A
TA17401.
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14n50
Abstract: TL 424 TRANSISTOR sth14n50
Text: SGS-THOMSON «^ miOTrifMOOi STH14N50 STH14N50FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STH14N50 STH14N50FI . . . . . V dss RDS(on Id 500 V 500 V 0.45 Q 0.45 £2 14.1 A 8 .8 A AVALAN C H E RUG G EDN ESS TECHNO LO G Y 100% AVALANC HE TESTED
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STH14N50
STH14N50FI
14N50
STH14N50FI
STH14N50/FI
TL 424 TRANSISTOR
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SmD TRANSISTOR a77
Abstract: smd marking code SSs
Text: BSS138 In fin e o n technologies SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level ' ^GS th = 0.8.2.0V Pin 1 Pin 3 Pin 2 S G Type Vbs b ^D S (o n ) Package Marking BSS 138 50 V 0.22 A 3.5 Q SOT-23 SSs Type BSS 138 BSS 138
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BSS138
OT-23
Q67000-S566
Q67000-S216
E6327
E6433
fopu22
S35bQ5
Q133777
SQT-89
SmD TRANSISTOR a77
smd marking code SSs
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Untitled
Abstract: No abstract text available
Text: DATA S H EE T MOS FIELD EFFECT TRANSISTOR 2SK2982 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DRAWINGS Unit : mm This product is N-Channel MOS Field Effect Transistor designed for high TO-251 current switching applications. FEATURES
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2SK2982
O-251
2SK2982-Z
O-252
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7652n
Abstract: 2n6766
Text: • 4302571 0[153734 3ZT ■ HAS 2N 6 76 5 2N 6766 S H a r r is N -Channel Enhancem ent-M ode Power Field-Effect Transistors A u g u st 1991 Features Package T O -20 4 A E BOTTOM VIEW • 25A and 30 A , 1 50V - 2 0 0V • ro s o n = 0 .0 8 5 0 and 0 .1 2 f l
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SLN-286
Abstract: No abstract text available
Text: ¿¡3 Stanford Microdevices Product Description SLN-287 Stanford M icrodevices’ SLN-287 is a high performance gallium arsenide heterojunction bipolar transistor MMIC housed in a j low-cost plastic drop-in package. A Darlington configuration is used for broadband performance from DC-3.5 GHz.
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SLN-287
SLN-286.
SLN-287
SLN-286
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Untitled
Abstract: No abstract text available
Text: Figure 19. IR M I 030 detail drawings with optional side view or top view mounting *MIN. ,008 .20 Photoimageable solder mask recommended between pads to prevent bridging -0 .0 8 1 (2 .0 6 ) Recommended " keep out area R 0 .05 2(R 1 .3 2 h -0.323 (8.21)r 0.001 (0.03) |
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IRM5000
1000/reel)
1-888-lnfineon
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