10PERATION Search Results

SMW60N10

Contextual Info: SMW60N10 CX'SiEconix in c o r p o r a t e d N-Channel Enhancement Mode Transistor TO-247 AD T O P VIEW PRODUCT SUMMARY V BR DSS (V) r DS(ON) (il) (A) •d 100 0 .0 2 5 60 u 1 GATE 2 DRAIN 3 SOURCE 1 2 3 ABSOLUTE MAXIMUM RATINGS (Tc = 25°C Unless Otherwise Noted)

2N7073

Contextual Info: C rS iica n ix J iÆ 2N7073 in c o r p o r a te d N-Channel Enhancement Mode Transistor TO-254AA Hermetic Package TOP VIEW PRODUCT SUMMARY V BR DSS r DS(ON) >D (V) <fi) (A) 400 0.55 9.0 2 SOURCE 3 GATE Case Isolated ABSOLUTE MAXIMUM RATINGS (Tc = 25°C Unless Otherwise Noted)

BUZ11A

Abstract: BUZ11
Contextual Info: H BUZ11A SiSconix in c o r p o r a te d N-Channel Enhancement Mode Transistor TO -220A B TOP VIEW o PRODUCT SUMMARY V BR DSS r DS(ON) •d (V) <«) (A) 50 0.060 25 1 GATE 2 DRAIN (Connected to TAB) 3 SO URCE , 2 3 ABSOLUTE MAXIMUM RATINGS (Tc = 25°C Unless Otherwise Noted)

transistor C 4231

Abstract: 2N7081
Contextual Info: 2N7081 ffSiBcanix in c o r p o ra te d N-Channel Enhancement Mode Transistor TO-257AB Hermetic Package TO P VIEW o PRODUCT SUMMARY V BR|DSS 100 rDS(ON •d (Ù ) (A) 0.15 12 1 GATE 2 DRAIN 3 SOURCE 1 2 3 C ase Isolated ABSOLUTE MAXIMUM RATINGS (Tc = 25°C Unless Otherwise Noted)

mod500a

Contextual Info: CX-Silico n ix in c o r p o r a te d MOD500A/500B/500C 4 N-Channel Enhancement Mode Transistors HERMETIC MODULE TOP VIEW PRODUCT SUMMARY PART NUMBER V BR DSS (V) r DS(ON) ( il) (A) LEADFORM OPTION ID .S =G MOD500A 500 0.43 13 Straight =G MOD500B 500 0.43

SMW70N06-14

Abstract: 4176 diode smw70n06 250JJ
Contextual Info: SMW70N06-14 fEX'SiEconix JJm in c o r p o r a te d N-Channel Enhancement Mode Transistor TO -247 AD TOP VIEW ABSOLUTE MAXIMUM RATINGS 0 c = 25°C Unless Otherwise Noted PAR AM ETERS/TEST CO NDITIONS Gate-Source Voltage Continuous Drain Current Tc = 25°C

Contextual Info: fX S ific o n ix SMM11P20 in c o r p o r a te d P-Channel Enhancement Mode Transistor T0-204AA TO-3 BOTTOM VIEW PRODUCT SUMMARY V (BR)DSS r DS(ON) •d (V) (A) (A) -200 0.50 -1 1 1 DRAIN (CASE) 2 GATE 3 SOURCE ABSO LU TE MAXIMUM RATINGS (Tc = 25°C Unless Otherwise Noted)1

Contextual Info: SPT203 RF AMPLIFIER PRELIMINARY INFORMATION FEATURES APPLICATIONS • • • • • • • • • • • • • • 500 MHz Bandwidth 5.0 dB Noise Figure 23 dB Insertion Gain +4 dBm 1 dB Compression Point Adaptive Impedance Matching Input and Output

Contextual Info: [ P G lIL lM Q lM Ä IiW LTCl 164-5 Low Power 8th Order Butterworth Lowpass Filter N ovem ber 1991 F€ATUR€S DCSCAIPTION • Butterworth or Bessel Response ■ 4mA Supply Current with ±5V Supplies The LTC1164-5 is a monolithic 8th order Butterworth lowpass

Contextual Info: m i EDI784MSV-RP 4Megx8 Ruggedized Plastic NAND Flash ELECT R O N IC DESlÊN S. IN C 4Mx8 Bit NAND Flash CMOS, Monolithic Features The EDI784MSV is a 4M 4,194,304)x8 bit Ruggedized Plastic NAND Flash memory with a spare array of 128K(131,072)x8 bit. Its NAND cell provides the most cost-effective solution for high

0808M

Abstract: 0808L VN0808M BSR67 VN0808L equivalent VN0808L 2N6661 2n666
Contextual Info: WZW* VN0808L ELECTRICAL CHARACTERISTICS Siliconix incorporated t a = 2 S °C u n le s s o th e rw is e n o te d P A R A M E T E R S /T E S T C O N D IT IO N S D raln-S o u rce Breakdown Voltage V q s = 0 , I q = 10 jxA Sym bol M in . T yp . M ax. V(BR)DSS

NC3010

Contextual Info: SMP11P20 CTSiiconix in c o r p o r a te d P-Channel Enhancement Mode Transistor TO-220AB TOP VIEW PRODUCT SUMMARY V BR DSS (V) r DS(ON) (ÎÎ) (A) •d -200 0.50 -1 1 1 GATE 2 DRAIN (Connected to TAB) 3 SOURCE ABSOLUTE MAXIMUM RATINGS (Tc = 25°C Unless Otherwise Noted)1

SMP20P10

Contextual Info: SMP20P10 C X *Siliconix in c o r p o r a te d P-Channel Enhancement Mode Transistor TO-22QAB TOP VIEW PRODUCT SUMMARY V BR DSS -1 0 0 rDS(ON) (O ) (A) •d 0 .2 0 -2 0 1 GATE 2 DRAIN (Connected to TAB) 3 SOURCE ABSOLUTE MAXIMUM RATINGS (Tc = 25°C Unless Otherwise Noted)1

SMP20N20

Contextual Info: SMP20N20 CfSiEcanix J -m in c o r p o r a te d N-Channel Enhancement Mode Transistor TO-22QAB TOP VIEW o PRODUCT SUMMARY V BR DSS r DS(ON) (V) ( ii) Id (A) 200 0.16 20 1 GATE 2 DRAIN (Connected to TAB) 3 SOURCE ABSOLUTE MAXIMUM RATINGS (Tc = 25 C Unless Otherwise Noted)

2N7092

Contextual Info: 2N7092 CX'SiSconix in c o r p o r a te d P-Channel Enhancement Mode Transistor TO-257AB Hermetic Package TOP VIEW o PRODUCT SUMMARY V fDS(ON) <n) (A) -200 0.50 -8.0 V(BR)DSS •d 1 GATE 2 DRAIN 3 SOURCE 1 2 3 Case Isolated ABSOLUTE MAXIMUM RATINGS (Tc = 25°C Unless Otherwise Noted)1

2N7072

Contextual Info: 2N7072 C f S ilic a n ix incorporated N-Channel Enhancement Mode Transistor TO-254AA Hermetic Package TOP VIEW o PRODUCT SUMMARY V BR DSS 200 r DS(ON) (ÎÎ) (A) >D 0 .2 0 16 1 DRAIN 2 SOURCE 3 GATE 1 2 3 Case Isolated ABSOLUTE MAXIMUM RATINGS (Tc = 25°C Unless Otherwise Noted)

smv1p20

Contextual Info: e x 'S i licoriix SMV1P20 in c o r p o ra t e d P-Channel Enhancem ent Mode Transistor 4-PIN DIP Similar to TO-250 TO P VIEW PRODUCT SUMMARY 1 E V (B R )D S S r DS(ON) (V) (n) (A) -200 3.0 -0.40 2 E 1 GATE 2 SO U R CE 3 DRAIN ABSO LU TE MAXIMUM RATINGS (TA = 25°C Unless Otherwise Noted)1

Contextual Info: EDI784MS V ^E D I 4Megx8NAND Flash flE C T B O M C OESGN& WC. PRELIMINARY 4Mx8 Bit NAND Flash CMOS, Monolithic F eatu res The EDI784MSV is a 4M 4,194,304 x8 bit NAND Flash memory with a spare array of 128K(131,072)x8 bit. Its NAND cell provides the most cost-effective solution for high density

Contextual Info: ^EDI EDI784MSV-RP ELECTRONIC DESIGNS. INC 4Megx8 Ruggedized Plastic NAND Flash 4Mx8 Bit NAND Flash CMOS, Monolithic F eatu res The EDI784MSV is a 4M 4,194,304 x8 bit Ruggedized Plastic NAND Flash memory with a spare array of 128K(131,072)x8 bit. Its NAND cell provides the most cost-effective solution for high

VN10KM equivalent

Abstract: siliconix VN10KM VN10K equivalent VN10KM siliconix VN10K VN10KE vn10k VN0610L to206
Contextual Info: Siliconix incorporated B O c O « */ ^ VN10KM, V IN I u r v i v i VN0610L S O o-ZbŸ VN10KE MOSPOWER N-Channel Enhancem ent M ode Transistors Zener Diode Protected Gate •TO-92 TO -237 FRO NT V IEW PRODUCT SUM M ARY T 0 -2 0 6 A C BO TTO M VIEW a PART N U M BER

SMP5N50F

Contextual Info: .B15SSS5 SMP5N50F N-Channel Enhancement Mode Transistor Fast Reverse Recovery TO-22QAB TO P VIEW o PRODUCT SUMMARY V BR DSS r DS(ON) •d t,r (V) (A) (A) (n s ) 500 1.5 4.5 250 1 GATE 2 DRAIN (Connected to TAB) 3 SO URCE ABSOLUTE MAXIMUM RATINGS (Tc = 25°C Unless Otherwise Noted)

SMP30N10

Contextual Info: SMP30N10 N-Channel Enhancement Mode Transistor TO-22QAB TOP VIEW PRODUCT SUMMARY V BR DSS (V) rDS(ON) (n) •d (A) 100 0.060 30 1 GATE 2 DRAIN (Connected to TAB) 3 SOURCE ABSOLUTE MAXIMUM RATINGS (Tc = 25°C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS

MOD200C

Abstract: mod200A
Contextual Info: MOD200A/200B/200C C T * S ilic o n ix in c o r p o r a te d 4 N-Channel Enhancement Mode Transistors HERMETIC MODULE TOP VIEW PRODUCT SUMMARY PART NUMBER V BR DSS (V) rDS(ON) (A) •d (A) LEADFORM OPTION MOD2ÛOA 200 0.11 21 Straight MOD200B 200 0.11 21 Bent Down

2N7071

Contextual Info: IT S iE conix 2N7071 in c o rp o ra te d N-Channel Enhancement Mode Transistor TO-254AA Hermetic Package TOP VIEW PRODUCT SUMMARY r°?A7 V BR DSS (V) 100 0 .1 0 0 •d (A) 23 3 GATE Case Isolated ABSOLUTE MAXIMUM RATINGS (Tc = 25°C Unless Otherwise Noted)