2-PIN IR 940 NM Search Results

IR LED 940 nm

Contextual Info: PIN PHOTODIODE DESCRIPTION FEATURES The PH320 is a PIN structure photodiode which is molded with visible-ray shielding resin, thus activating the light-receiving sensitivity at approx. 840 nm and leading to little possibility of malfunction by fluorescent lamps. As the high-speed re­

ir led 940 nm 1 w

Abstract: 660 880 940 led IR LED 940 nm spo2 spo2 specifications spo2 features 895nm emitter 660 880 940 dual-emitter DUAL-EMITTER MATCHING-PHOTODET
Contextual Info: DUAL EMITTER / MATCHING PHOTODETECTOR SERIES MOLDED LEAD FRAME AND LEADLESS CERAMIC SUBSTRATE APPLICATIONS FEATURES • SPO2 • Blood Analysis • Medical Instrumentaion • Ratiometric Instruments The Dual LED series consist of a 660 nm red LED and a companion IR

BPD-BQA934

Abstract: l129 BPD-BQB334 L-132 BPD-BQA334 BPD-BQAA34 BPD-BQB934 BPD-BQBA34 BPD-BQD934 BPD-BQDA34
Contextual Info: PHOTODIODE-END & SIDE LOOK Chip Package Part No. Material Electrical & Optical Characteristics Wavelength Op nm Light Current Lens IL(uA) Color @VR=5V Ee=1mW/cm2 Typ 3I BPD-BQA341 Si-Photodiode BPD-BQB341 (PIN) BPD-BQA334 BPD-BQB334 5I Si-Photodiode (PIN)

L14F1 phototransistor datasheet

Abstract: L14F1 PHOTOTRANSISTOR phototransistor 3 pin L14F1 Phototransistor L14F1 l14f1 ir phototransistor T1 L14F1 Phototransistor L14G3 L14F1 PHOTOTRANSISTOR PIN opto transistor moc 12v LED 55 with L14F1 phototransistor
Contextual Info: Optoelectronics Light Emitting Diodes Light Emitting Diodes LED , Plastic Package Ie (mW/sr) CIF = 100 mA Max IR (µA) @ VR = 5V Emission Angle in Degrees (°) @ 1/2 Intensity Wavelength (nm) λp Min Max Max VF (V) @ IF = 100 mA QEC112 6 30 1.7 10 24 940

VSML3710

Abstract: VSML3710-GS08
Contextual Info: VSML3710 Vishay Semiconductors High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs FEATURES • • • • • • • • • • • • • • • • Package type: surface mount Package form: PLCC-2 Dimensions L x W x H in mm : 3.5 x 2.8 x 1.75

VSML3710

Abstract: VSML3710-GS08 MA50NM
Contextual Info: VSML3710 Vishay Semiconductors High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs FEATURES • Package type: surface mount • Package form: PLCC-2 • Dimensions L x W x H in mm : 3.5 x 2.8 x 1.75 • Peak wavelength: λp = 940 nm • High reliability

J-STD-020D

Abstract: VSML3710 VSML3710-GS08
Contextual Info: VSML3710 Vishay Semiconductors High Power Infrared Emitting Diode, RoHS Compliant, 940 nm, GaAlAs/GaAs FEATURES • Package type: surface mount • Package form: PLCC-2 • Dimensions L x W x H in mm : 3.5 x 2.8 x 1.75 • Peak wavelength: λp = 940 nm • High reliability

VSML3710

Abstract: VSML3710-GS08
Contextual Info: VSML3710 Vishay Semiconductors High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs FEATURES • Package type: surface mount • Package form: PLCC-2 • Dimensions L x W x H in mm : 3.5 x 2.8 x 1.75 • Peak wavelength: λp = 940 nm • High reliability

Contextual Info: O K I electronic components OLD125_ GaAs Infrared Light-Emitting Diode_ GENERAL DESCRIPTION The OLD125 is a high-output GaAs infrared light emission mindiode sealed with a red trans­ parent epoxy in a ceramic case. Its light emission wave is peaks at 940 nm. Because of its

Contextual Info: O K I electronic components OLP124 GaAs Infrared Light Emitting Diode GENERAL DESCRIPTION The OLD124 is a high-output GaAs infrared light emission mindiode sealed with a transparent resin in a TO-18 metal case. Its light emission wave is peaks at 940 nm. Because of its sharp directivity,

Contextual Info: VSML3710 Vishay Semiconductors High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs FEATURES • Package type: surface mount • Package form: PLCC-2 • Dimensions L x W x H in mm : 3.5 x 2.8 x 1.75 • Peak wavelength: λp = 940 nm • High reliability

Contextual Info: VSML3710 Vishay Semiconductors High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs FEATURES • Package type: surface mount • Package form: PLCC-2 • Dimensions L x W x H in mm : 3.5 x 2.8 x 1.75 • Peak wavelength: λp = 940 nm • High reliability

Contextual Info: VSML3710 Vishay Semiconductors High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs FEATURES • Package type: surface mount • Package form: PLCC-2 • Dimensions L x W x H in mm : 3.5 x 2.8 x 1.75 • Peak wavelength: λp = 940 nm • High reliability

Light Emitting Diodes

Abstract: Infrared Emitting Diode OLD124
Contextual Info: O K I electronic components OLP124 GaAs Infrared Light Emitting Diode GENERAL DESCRIPTION The OLD124 is a high-output GaAs infrared light emission mindiode sealed with a transparent resin in a TO-18 metal case. Its light emission wave is peaks at 940 nm. Because of its sharp directivity,

317 T

Abstract: PH31-0 PH310
Contextual Info: PLASTIC MOLDED PIN PHOTODIODE PH310 FEATURES DESCRIPTION • ULTRA HIGH SPEED RESPONSE tr, tf '=¡30 ns • COINCIDENCE OF THE WAVELENGTH OF MAXIMUM SENSITIVITY WITH THAT OF AN INFRARED LED: * smax = 990 nm The PH310 is a photodiode with PIN structure. It has a wide

fototransistor

Abstract: AFD3000 AFE2000 FPE100 fototransistor ir T0180 AFD1200 AFE5100
Contextual Info: ABORN ELECTRONICS S3E J> Special Devices OGTTblM DDDODSb bT^ H A B E -p¿S -07 FIBER OPTIC EMITTERS DESCRIPTION DEVICE units çonditlons WAVELENGTH POWER OUT FORWARD VOLTAGE nM Ip=50mA Volts Ip*50mA uW Ip=5QmA T i n r PACKAGE FACE TIME DRAWING numerical APERATURE

smd diode GW

Abstract: TSML1020 DATA SHEET high power infrared led TEMT1000 TSML1000 TSML1020 TSML1030 TSML1040 GaAs 1000 nm Infrared Diode,
Contextual Info: TSML1000, TSML1020, TSML1030, TSML1040 Vishay Semiconductors High Power Infrared Emitting Diode, RoHS Compliant, 940 nm, GaAlAs/GaAs FEATURES TSML1000 TSML1020 • Package type: surface mount • Package form: GW, RGW, yoke, axial • Dimensions L x W x H in mm : 2.5 x 2 x 2.7

OLD122B

Contextual Info: O K I electronic components QLD122_ GaAs Infrared Light-Emitting Diode_ GENERAL DESCRIPTION The OLD122 is a high-output GaAs infrared light emission diode sealed with a glass lens in a TO-18 metal case. Its light emission wave peaks at 940 nm. Because of its sharp directiv­

Contextual Info: OKI electronic components OLD123_ GaAs Infrared Light-Emitting Diode_ GENERAL DESCRIPTION The OLD123 is a high-output G aAs infrared light emission diode sealed with a flat glass in a TO-18 metal case. Its light emission wave peaks at 940 nm. Beause of its sharp directivity,

smd diode GW

Contextual Info: TSML1000, TSML1020, TSML1030, TSML1040 Vishay Semiconductors High Power Infrared Emitting Diode, RoHS Compliant, 940 nm, GaAlAs/GaAs FEATURES TSML1000 TSML1020 • Package type: surface mount • Package form: GW, RGW, yoke, axial • Dimensions L x W x H in mm : 2.5 x 2 x 2.7

Contextual Info: OKI electronic components OLP124 _ GaAs Infrared Light Emitting Diode GENERAL DESCRIPTION The OLD124 is a high-output GaAs infrared light emitting diode sealed with a transparent resin in a TO-18 metal case. Its light emission wavelength peaks at 940 nm. Because of its high reliability, the

Contextual Info: O K I electronic components OLD 127_ GaAs Infrared Light-Emitting Diode_ GENERAL DESCRIPTION The OLD 127 is a high-output GaAs infrared light emission mindiode sealed with a glass lens in a metal mini case. Its light emission wave is peaks at 940 nm. Because of its sharp direc­

old123

Contextual Info: OKI electronic components GaAs Infrared Light Emitting Diode GENERAL DESCRIPTION The OLD123 is a high-output GaAs infrared light emitting diode sealed with a flat glass in a TO-18 metal case. Its light emission wavelength peaks at 940 nm. Beause of its high reliability, the OLD! 23

OLD123

Abstract: Infrared Emitting Diode OLP123 1000 nm light emitting diode
Contextual Info: O K I electronic components OLP123_ GaAs Infrared Light Emitting Diode GENERAL DESCRIPTION The OLD123 is a high-output GaAs infrared light emission diode sealed with a flat glass in a TO-18 metal case. Its light emission wave peaks at 940 nm. Beause of its sharp directivity, multiple units