B7S4240 Search Results

TfiS SEMICONDUCTOR GROUP

Abstract: MSM514400 MSM514400-10 S4240 24B4G
Contextual Info: 4b E D • b7S4240 O K I QODTbDS TfiS B O K I J SEMICONDUCTOR M S M 5 1 4 4 0 0 7 - GROUP V * - 2 3 1,048,576-WORD X 4-BIT DYNAMIC RAM: FAST PAGE MODE TYPE GENERAL DESCRIPTION The M SM 5 1 4 4 0 0 isa new generation dynamic R A M organized as 1,048,576 w ords by 4 bits.

MSC23409C

Contextual Info: O K I Sem icon d u ctor M SC 23409C /C L -X X D S9 4,194,304-Word x 9-Bit DRAM MODULE : FAST PAGE MODE TYPE DESCRIPTION The OKI M SC23409C/CL-xxDS9 is a fully decoded 4,194,304-word x 9-bit CMOS Dynamic Random Access Memory Module composed of nine 4-Mb DRAMs 4M x 1 in SOJ packages

AA 170 circit diagram

Abstract: 256KX16 MSM5416256 ucas zip
Contextual Info: Technical Information OKI Semiconductor MSM5416256/MSM54V16256 ¿ Lo w voltage version or V-voreion _ 262,144 Words x 16 Bits GRAPHICS BURST A C C ESS MEMORY

ST 27C1000

Contextual Info: O K I Semiconductor MSM6690 RO M Interface LSI DESCRIPTIO N The MSM6690 is a LSI capable of driving 3 devices of 131,072 x 8 bit EPROM or MASKROM. m VDD SADX H SADY I SÄSX 38 ] S Ä S Y DOUT | T T ESTO 1 Ö L The MSM6690 is provided with a built-in internal

Contextual Info: O K I Semiconductor MSM38S0000/MSM98S000 0.8|im Mixed 3-V/5-V Sea of Gates and Customer Structured Arrays DESCRIPTION OKI's 0.8 tm ASIC products, specially designed for mixed 3-V /5-V applications, are now available in both Sea Of Gates (SOG and Customer Structured Array (CSA) architectures. Both the SOG-based MSM38S

ms1250

Abstract: SUNNY MSM6650 eprom 6653 ln 258 oki voice synthesizer msm6375 Sunny Oscillators MSM6653 MSM6656-XXX 10FFE
Contextual Info: O K I Semiconductor MSM6652-XXX/MSM6653-XXX/ MSM6654-XXX/MSM6655-XXX/ MSM6656-XXX_ Internal MASK ROM Speech Synthesis LSI G E N E R A L D E S C R IP T IO N The MSM6650 family is a successor to the MSM6375 family that are speech synthesis LSIs w ith

Contextual Info: O K I Semiconductor MSM511000H_ 1,048,576-Word x 1-Bit DYN A M IC RA M : FAST PAG E M O D E TYPE DESCRIPTION The MSM511000H is a 1,048,576-word x 1-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The MSM511000H achieves high integration, high-speed operation, and low-power

Contextual Info: O K I Semiconductor MSM51V17400 4,194,304-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V17400 is a new generation dynamic organized as 4,194,304-word x 4-bit. The technology used to fabricate the MSM51V17400 is OKI's CMOS silicon gate process technology.

CATVs

Abstract: OL327L S43 diodes DFB ea OL327B
Contextual Info: O K I electronic com ponents OL327B, OL327L 1.3 |am DFB Laser Diode GENERAL DESCRIPTION The OL327B and OL327L are 1.3 |im, InGaAsP/InP DFB laser diodes for optical communication systems. FEATURES • • • Longitudinal single-m ode operation High speed Compact packages: <| 5.6mm

Contextual Info: O K I Semiconductor M S C 2 3 1 0 8 C /C L -X X P S 2 1,048,576-Word x 8-Bit DRAM MODULE : FAST PAGE MODE TYPE DESCRIPTION The OKI MSC23108C/CL-xxDS2 is a fully decoded 1,048,576-word x 8-bit CMOS Dynamic Random Access Memory Module composed of two 4-Mb DRAMs 1M x 4 in SOJ packages

Contextual Info: O K I electronic components KGF2702_ Wide-Band Amplifier for Microwave UHF-Band and PCS Frequencies GENERAL DESCRIPTION The KGF2702, housed in an 8-pin SOP plastic package, is a tw o-stage am plifier that features flat and high gain over a w ide range of frequencies, internal inpu t and output m atching, and high

Contextual Info: O K I Semiconductor MSM5 14260A/ASL 262,144-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The M SM 514260A /A SL is a new generation D ynam ic RA M organized a s 262,144-w ord x 16-bit configuration. The technology u sed to fabricate the M SM 514260A /A SL is OKI's C M O S silicon gate process

OP125

Abstract: OD125
Contextual Info: OKI electronic com ponents O P 125 _ InGaAs PIN Photodiode for Optical Communications GEN ERAL DESCRIPTION The OD125 is designed as a receiver AMP for 30-Mbit digital signals. It features a PIN photodiode and AMP built into a TO-18 metal package.

photo sensor pin diagram

Abstract: paper sensor cd photo detector "Photo Interrupter" bar code phototransistor PHOTO SENSOR of application OC808 IR SENSOR pin configuration QC808 3 pin IR sensor pin connection
Contextual Info: OKI electronic components OC808 Reflector-Type Photo Interrupter GENERAL DESCRIPTION The OC 8O8 is a reflector-type photo interrupter that contains a high-output infrared light-emitting diode and high-sensitivity phototransistor. FEATURES • High output • Compact, capable of reading 0.5 mm bar codes

Contextual Info: O K I Sem iconductor M SM6650 External ROM Drive Speech Synthesis LSI GENERAL DESCRIPTION MSM6650, a successor to OKI's MSM6376 speech synthesis LSI, can externally store d ata by directly connecting a m axim um 64 M bit ROM or EPROM. The PCM m ethod is ad d ed to the

20-PIN

Abstract: 26-PIN ZIP20-P-400-W1
Contextual Info: O K I Sem iconductor MSM5 14 4 0 0 A/AL 1,048,576-W ord x 4 -B it DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION c v -siu v iu s silicon gate proce The device operates at a single 5V power supply. Its I/O pins are TTL compatible. FEATURES

M7602

Abstract: QG21112 ECHO canceller IC MSM7602 MSM7602-001 MSM7602-001GS-K MSM7602-001TS-K 28pin echo IC 3.3 echo amplifier IC 28pin
Contextual Info: GENERAL DESCRIPTION The MSM7602 is an im proved version of the MSM7520 w ith the same basic configuration. The MSM7602 uses a 19.2 M Hz clock frequency to m eet PHS, the 3 V pow er supply 2.7 V to 5.5 V , and compact packaging. Also, this device adds the how ling detecter control pins and m ain cleek

Contextual Info: O K I Semiconductor MSM6788 SBC SOLID-STATE RECORDER LSI GENERAL DESCRIPTION The MSM6788 is a solid-state-recorder developed using the Sub Band Coding SBC method. By externally connecting a microphone, a speaker, a speaker drive amplifier, and dedicated DRAM

Bv 42 transistor

Abstract: CI 576 tsop50 42-PIN MSM51V17190-70 MSM51V17190-80 oki Package SOJ Scans-0053100
Contextual Info: O K I Semiconductor M SM 51V17190_ 1,048,576-Word x 18-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V17190 is a new generation Dynamic RAM organized as 1,048,576-word x 18-bit configuration. The technology used to fabricate the MSM51V17190 is OKI's CMOS silicon gate process technology.