2.4-2.7GHZ 2W POWER AMPLIFIER Search Results

SCHEMATIC DIAGRAM OF WIFI RF POWER TRANSISTOR AMP

Contextual Info: Preliminary Product Description Sirenza Microdevices’ SZM-2066Z is a high linearity class AB Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic Q-FlexN multi-chip module package. This HBT amplifier is made with InGaP on GaAs

Contextual Info: Preliminary Product Description Sirenza Microdevices’ SZM-2066Z is a high linearity class AB Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic Q-FlexN multi-chip module package. This HBT amplifier is made with InGaP on GaAs

SZP-2026Z

Contextual Info: Preliminary Product Description Sirenza Microdevices’ SZP-2026Z is a high linearity single stage class AB Heterojunction Bipolar Transistor HBT amplifier housed in a proprietary surface-mountable plastic encapsulated package. This HBT amplifier is made with

transistor 2.4GHz amplifier schematic

Abstract: 2.4GHz amplifier schematic SZP-2026 SZP-2026Z 2.4GHz 2w Power Amplifier transistor SOF-26 szp2026z
Contextual Info: Preliminary Product Description Sirenza Microdevices’ SZP-2026Z is a high linearity single stage class AB Heterojunction Bipolar Transistor HBT amplifier housed in a proprietary surface-mountable plastic encapsulated package. This HBT amplifier is made with

Contextual Info: Preliminary Product Description Sirenza Microdevices’ SZM-2066Z is a high linearity class AB Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic Q-FlexN multi-chip module package. This HBT amplifier is made with InGaP on GaAs

SCHEMATIC DIAGRAM OF WIFI RF POWER TRANSISTOR AMP

Abstract: SCHEMATIC DIAGRAM OF WIFI RF POWER TRANSISTOR SZM-2066Z vpc3 s 2.4 ghz transistor wifi amplifier wifi 2.4 ghz wifi 2.4 ghz pcb layout SZM-2066 vpc3 c wifi 2.4ghz DETECTOR CIRCUIT DIAGRAM
Contextual Info: Preliminary Product Description Sirenza Microdevices’ SZM-2066Z is a high linearity class AB Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic Q-FlexN multi-chip module package. This HBT amplifier is made with InGaP on GaAs

Contextual Info: Preliminary Product Description Sirenza Microdevices’ SZP-2026Z is a high linearity single stage class AB Heterojunction Bipolar Transistor HBT amplifier housed in a proprietary surface-mountable plastic encapsulated package. This HBT amplifier is made with

SzM2166

Abstract: SCHEMATIC DIAGRAM OF WIFI RF POWER TRANSISTOR AMP SZM - 238
Contextual Info: Advanced Information Product Description Sirenza Microdevices’ SZM-2166Z is a high linearity class AB Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic Q-FlexN multi-chip module package. This HBT amplifier is made with InGaP on GaAs

2.4 ghz transistor wifi amplifier

Contextual Info: Preliminary Product Description Sirenza Microdevices’ SZM-2066Z is a high linearity class AB Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic Q-FlexN multi-chip module package. This HBT amplifier is made with InGaP on GaAs

Contextual Info: Preliminary Product Description Sirenza Microdevices’ SZP-2026Z is a high linearity single stage class AB Heterojunction Bipolar Transistor HBT amplifier housed in a proprietary surface-mountable plastic encapsulated package. This HBT amplifier is made with

SCHEMATIC DIAGRAM OF WIFI RF POWER TRANSISTOR

Abstract: SCHEMATIC DIAGRAM OF WIFI RF POWER TRANSISTOR AMP SZM-2166 wifi 2.4 ghz pcb layout transistor 2.4GHz amplifier schematic wifi 2.4 ghz transistor wifi amplifier szm2166 2.4GHz Power Amplifier module wifi 2.4 ghz SZM-2166Z
Contextual Info: Preliminary Product Description Sirenza Microdevices’ SZM-2166Z is a high linearity class AB Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic Q-FlexN multi-chip module package. This HBT amplifier is made with InGaP on GaAs

QAM-64

Contextual Info: AH314 2.3-2.9 GHz WiMAX 2W Driver Amplifier • EVM <2.5 %@ 24 dBm Pout • Internal Active Bias Vpd2 Vcc2 Applications • 802.16 WiMAX infrastructure • WiBro infrastructure RF OUT GND / NC RF OUT RF IN GND / NC RF OUT RF IN GND / NC GND / NC GND / NC • RoHS-compliant/Lead-free

AH314

Abstract: AH314-PCB JESD22-A114 17095 QAM 1024, OFDM
Contextual Info: AH314 2.3-2.9 GHz WiMAX 2W Driver Amplifier • EVM <2.5 %@ 24 dBm Pout • Internal Active Bias Vpd2 Vcc2 Applications • 802.16 WiMAX infrastructure • WiBro infrastructure RF OUT GND / NC RF OUT RF IN GND / NC RF OUT RF IN GND / NC GND / NC GND / NC • RoHS-compliant/Lead-free

QAM64

Abstract: 6039 marking
Contextual Info: AH314 2.3-2.9 GHz WiMAX 2W Driver Amplifier • EVM <2.5 %@ 24 dBm Pout • Internal Active Bias Vpd2 Vcc2 Applications • 802.16 WiMAX infrastructure • WiBro infrastructure RF OUT GND / NC RF OUT RF IN GND / NC RF OUT RF IN GND / NC GND / NC GND / NC • Lead-free/RoHS-compliant

AH314

Abstract: AH314-PCB JESD22-A114 QAM driver s parameters 4ghz 2W High Linearity Amplifier 2W High Amplifier qfn
Contextual Info: AH314 2.3-2.9 GHz WiMAX 2W Driver Amplifier • EVM <2.5 %@ 24 dBm Pout • Internal Active Bias Vpd2 Vcc2 Applications • 802.16 WiMAX infrastructure • WiBro infrastructure RF OUT GND / NC RF OUT RF IN GND / NC RF OUT RF IN GND / NC GND / NC GND / NC • Lead-free/RoHS-compliant

Contextual Info: SZP-2026Z 2.2GHz to 2.7GHz 2W InGaP Amplifier SZP-2026Z Preliminary 2.2GHz to 2.7GHz 2W InGaP AMPLIFIER RFMD Green, RoHS Compliant, Pb-Free Package: SOF-26 Product Description Features RFMD’s SZP-2026Z is a high linearity single stage class AB Heterojunction Bipolar Transistor

600S100JW250

Abstract: cap 10pF 50V 10 0603 X7R 600S2R0JW250 MCH18
Contextual Info: RFPA2226 RFPA2226 2.2GHz to 2.7GHz 2W InGaP AMPLIFIER 2.2GHz TO 2.7GHz 2W InGaP AMPLIFIER Package: QFN Features     P1dB =33.5dBm at 5V, 2.4GHz 802.11g 54Mb/s Class AB Performance POUT =26dBm at 2.5% EVM, VCC 5V POUT =27dBm at 2.5% EVM, VCC 6V

Contextual Info: RFPA2226 2.2GHz to 2.7GHz 2W InGaP AMPLIFIER RFPA2226 Proposed 2.2GHz TO 2.7GHz 2W InGaP AMPLIFIER Package: QFN Features     P1dB =33.5dBm at 5V, 2.4GHz 802.11g 54Mb/s Class AB Performance POUT =26dBm at 2.5% EVM, VCC 5V POUT =27dBm at 2.5% EVM,

Contextual Info: SZM-2066Z SZM-2066Z 2.4GHz to 2.7GHz 2W Power Amplifier 2.4GHz to 2.7GHz 2W POWER AMPLIFIER RFMD Green, RoHS Compliant, Pb-Free Package: QFN, 6mmx6mm Product Description Features RFMD’s SZM-2066Z is a high linearity class AB Heterojunction Bipolar Transistor

SZM-2066Z

Abstract: transistor 2.4GHz amplifier schematic wifi SZM-2066 600s100 transistor 2.4GHz class ab amplifier schematic SZM2066Z
Contextual Info: SZM-2066Z SZM-2066Z 2.4GHz to 2.7GHz 2W Power Amplifier 2.4GHz to 2.7GHz 2W POWER AMPLIFIER Package: QFN, 6mmx6mm Product Description Features RFMD’s SZM-2066Z is a high linearity class AB Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic Q-FlexN multi-chip

Contextual Info: SZM-2066Z SZM-2066Z 2.4GHz to 2.7GHz 2W Power Amplifier 2.4GHz to 2.7GHz 2W POWER AMPLIFIER Package: QFN, 6mmx6mm Product Description Features RFMD’s SZM-2066Z is a high linearity class AB Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic Q-FlexN multi-chip

dk39

Abstract: circuit amplifier wireless 2.4ghz 802.11g
Contextual Info: SZM-2166Z SZM-2166Z 2.3GHz to 2.7GHz 2W Power Amplifier 2.3GHz to 2.7GHz 2W POWER AMPLIFIER RFMD Green, RoHS Compliant, Pb-Free Package: QFN, 6mmx6mm Product Description Features RFMD’s SZM-2166Z is a high linearity class AB Heterojunction Bipolar Transistor HBT amplifier

vpc3 c

Abstract: TRANSISTOR MARKING CODE R2A SZM-2066Z
Contextual Info: SZM-2066Z SZM-2066Z 2.4GHz to 2.7GHz 2W Power Amplifier 2.4GHz to 2.7GHz 2W POWER AMPLIFIER Package: QFN, 6mmx6mm Product Description Features RFMD’s SZM-2066Z is a high linearity class AB Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic Q-FlexN multi-chip

Contextual Info: SZM-2166Z SZM-2166Z 2.3GHz to 2.7GHz 2W Power Amplifier 2.3GHz to 2.7GHz 2W POWER AMPLIFIER Package: QFN, 6mmx6mm Product Description Features RFMD’s SZM-2166Z is a high linearity class AB Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic Q-FlexN multi-chip module package. This HBT