2.7-3.5GHZ BAND Search Results

051 166

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFS45V2735 2.7 - 3.5GHz BAND 30W INTERNALLY MATCHED GaAs FET DESCRIPTION unit : mm OUTLINE The MGFS45V2735 is an internally impedance-matched GaAs power FET especially designed for use in 2.7 - 3.5 GHz band amplifiers. The hermetically sealed metal-ceramic

MGFS45V2735

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFS45V2735 2.7 - 3.5GHz BAND 30W INTERNALLY MATCHED GaAs FET OUTLINE FEATURES 2MIN DESCRIPTION The MGFS45V2735 is an internally impedance-matched GaAs power FET especially designed for use in 2.7 - 3.5 GHz band amplifiers. The hermetically sealed metal-ceramic

MGFS45V2735

Abstract: 051 166
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFS45V2735 2.7 - 3.5GHz BAND 30W INTERNALLY MATCHED GaAs FET O U TLIN E FEATURES 2M IN DESCRIPTION The MGFS45V2735 is an internally impedance-matched GaAs power FET especially designed for use in 2.7 - 3.5 GHz band amplifiers. The hermetically sealed metal-ceramic

MGFS44V2735

Abstract: Q-35 2.7 3.5 s band
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> PRELIM INARY Notice: This is not a final specification. Some parametric lim its are subject to change. MGFS44V2735 2.7 - 3.5GHz BAND 25W INTERNALLY MATCHED GaAs FET DESCRIPTION unit : mm OUTLINE The MGFS44V2735 is an internally impedance-matched

MGFS45V2735

Contextual Info: M IT S U B IS H I S E M IC O N D U C T O R < G a A s F E T > MGFS45V2735 2.7 - 3.5GHz BAND 30W INTERNALLY MATCHED G a As FET DESCRIPTION The M G FS45V2735 is an internally impedance-matched GaAs power FET especially designed for use in 2.7 - 3.5 G H z band amplifiers. The hermetically sealed metal-ceramic

MGFS44V2735

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFS44V2735 2.7 - 3.5GHz BAND 24W INTERNALLY MATCHED GaAs FET Requests Regarding Safety Designs Mitsubishi Electric constantly strives to raise the level of its quality and reliability. Despite these concerted efforts, however, there will be occasions when our semiconductor products suffer breakdowns, malfunctions or other

SMD phase shifter

Abstract: phase shifter ICs in SMD package AN0017
Contextual Info: Advance Information S-BAND 6-BIT DIGITAL PHASE-SHIFTER GaAs Monolithic Microwave IC P6 …P1 V V+ Control interface I Out P1 P2 P3 P4 P5 P6 UMS is developing a S-Band 2.7-3.5GHz monolithic 6 bit digital phase-shifter with a 0-360° range and offering a high phase accuracy. The typical RMS phase error is lower than 1°.

MGFS45V2735

Contextual Info: < L/S band internally matched power GaAs FET > MGFS45V2735 2.7 – 3.5 GHz BAND / 30W DESCRIPTION unit : m m OUTLINE The MGFS45V2735 is an internally impedance-matched GaAs power FET especially designed for use in 2.7 - 3.5 GHz band amplifiers. The hermetically sealed metal-ceramic

Contextual Info: < L/S band internally matched power GaAs FET > MGFS45V2735 2.7 – 3.5 GHz BAND / 30W DESCRIPTION unit : m m OUTLINE The MGFS45V2735 is an internally impedance-matched GaAs power FET especially designed for use in 2.7 - 3.5 GHz band amplifiers. The hermetically sealed metal-ceramic

Contextual Info: < L/S band internally matched power GaAs FET > MGFS44V2735 2.7 – 3.5 GHz BAND / 24W DESCRIPTION unit : m m OUTLINE The MGFS44V2735 is an internally impedance-matched GaAs power FET especially designed for use in 2.7 - 3.5 GHz band amplifiers. The hermetically sealed metal-ceramic

FMM5027VJ

Abstract: FMM5027
Contextual Info: FMM5027VJ MMIC Power Amplifier FEATURES • • • • • Wide Frequency Band: 0.8 to 3GHz Medium Power: P1dB=26dBm Typ. @f=0.8 - 3GHz High Linear Gain: GL=19dB (Typ.)@ f=0.8 - 3GHz Wide Operating Temperature Range Hermetically Sealed Package DESCRIPTION

mgfs44v2735

Contextual Info: < L/S band internally matched power GaAs FET > MGFS44V2735 2.7 – 3.5 GHz BAND / 24W DESCRIPTION unit : m m OUTLINE The MGFS44V2735 is an internally impedance-matched GaAs power FET especially designed for use in 2.7 - 3.5 GHz band amplifiers. The hermetically sealed metal-ceramic

FMM5027VJ

Abstract: FMM5027
Contextual Info: FMM5027VJ MMIC Power Amplifier FEATURES • Wide Frequency Band: 0.8 to 3GHz • Medium Power: P1dB=26dBm Typ. @f=0.8 - 3GHz • High Linear Gain: GL=19dB (Typ.)@ f=0.8 - 3GHz • Wide Operating Temperature Range • Hermetically Sealed Package DESCRIPTION

FMM5027

Abstract: FMM5027VJ fujitsu power amplifier GHz mmic case styles case style 511 mmic 557
Contextual Info: FMM5027VJ MMIC Power Amplifier FEATURES • • • • • Wide Frequency Band: 0.8 to 3GHz Medium Power: P1dB=26dBm Typ. @f=0.8 - 3GHz High Linear Gain: GL=19dB (Typ.)@ f=0.8 - 3GHz Wide Operating Temperature Range Hermetically Sealed Package DESCRIPTION

n channel fet k 1118

Abstract: TGA8061
Contextual Info: TGA8061-SCC 100-MHz TO 3.5-GHz LOW-NOISE AMPLIFIER AP PR O VAL 5026 • 3-dB Bandwidth Exceeds 5 Octaves • 2.4-dB Noise Figure With Low Input and Output SWR • 18-dB G ain • 15-dBm Output Power at 1-dB Gain Compression • Operates From Single 12-V Supply

Contextual Info: Eudyna GaN-HEMT 30W Preliminary ES/EGN35A030MK High Voltage - High Power GaN-HEMT FEATURES ・High Voltage Operation : VDS=50V ・High Power : 46.0dBm typ. @ P3dB ・High Efficiency: 55%(typ.) @ P3dB ・Linear Gain : 13.0dB(typ.) @ f=3.5GHz ・Proven Reliability

Contextual Info: Eudyna GaN-HEMT 90W Preliminary ES/EGN35A090IV High Voltage - High Power GaN-HEMT FEATURES ・High Voltage Operation : VDS=50V ・High Power : 50.0dBm typ. @ P3dB ・High Efficiency: 50%(typ.) @ P3dB ・Linear Gain : 12.0dB(typ.) @ f=3.5GHz ・Proven Reliability

Contextual Info: PRELIMINARY CGH35060F 60 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH35060F is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH35060F ideal for 3.3-3.9GHz WiMAX and

GaN amplifier

Abstract: EGN35A180IV
Contextual Info: Eudyna GaN-HEMT 180W Preliminary ES/EGN35A180IV High Voltage - High Power GaN-HEMT FEATURES ・High Voltage Operation : VDS=50V ・High Power : 53.0dBm typ. @ P3dB ・High Efficiency: 50%(typ.) @ P3dB ・Linear Gain : 12.0dB(typ.) @ f=3.5GHz ・Proven Reliability

GRM1555C1H100JZ01B

Contextual Info: MGA-30316 3.3 -3.9GHz ½ Watt High Linearity Amplifier Data Sheet Description Features Avago Technologies’ MGA-30316 is a high linearity ½ Watt PA with good OIP3 performance and exceptionally good PAE at p1dB gain compression point, achieved through the use of Avago Technologies’ proprietary 0.25um GaAs

GRM1555C1H100JZ01B

Abstract: 1128 dbm qfn qfn 32 stencil 16 pins qfn 3x3
Contextual Info: MGA-30316 3.3 -3.9GHz ½ Watt High Linearity Amplifier Data Sheet Description Features Avago Technologies’ MGA-30316 is a high linearity ½ Watt PA with good OIP3 performance and exceptionally good PAE at p1dB gain compression point, achieved through the use of Avago Technologies’ proprietary 0.25um GaAs

xm0830

Abstract: C54PF GaAs IC High Isolation Positive Control Switch 3.5GHZ
Contextual Info: PRELIMINARY DATA SHEET XM0830SK-TL1301 DS0830SK-01C GaAs IC High Power SPDT Switch  Applications AMPS, GPS, PCS, W-CDMA, TD-SCDMA, WiMAX and other RF applications.  Features • Positive Voltage Control • Pin0.5dB @+2.6V .35dBm typ. @ 1-2GHz / 32.5dBm typ. @ 3.5GHz

XM0830SK-TL1301

Abstract: MURATA GRM155
Contextual Info: PRELIMINARY DATA SHEET XM0830SK-TL1301 DS0830SK-01B GaAs IC High Power SPDT Switch  Applications AMPS, GPS, PCS, W-CDMA, TD-SCDMA, WiMAX and other RF applications.  Features • Positive Voltage Control • Pin0.5dB @+2.6V .35dBm typ. @ 1-2GHz / 32.5dBm typ. @ 3.5GHz

EGN010MK

Abstract: 6 ghz amplifier 10w
Contextual Info: Eudyna GaN-HEMT 10W Preliminary EGN010MK High Voltage - High Power GaN-HEMT FEATURES ・High Voltage Operation : VDS=50V ・High Power : 41.0dBm typ. @ P3dB ・High Efficiency: 60%(typ.) @ P3dB ・Linear Gain : 15dB(typ.) @ f=3500MHz ・Broad Frequency Range : 800 to 3700MHz