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    200 HR 6G Search Results

    200 HR 6G Datasheets Context Search

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    RFDC

    Abstract: No abstract text available
    Text: BIAS-TEES Surface Mount ❏ 50Ω HIGH CURRENT 100 kHz to 6000 MHz JEBT MODEL NO. JEBT-4R2G JEBT-4R2GW NEW TCBT-2R5G NEW TCBT-6G Note B C O N N E C T I O N — — — — — — BL301 BL301 hr hr 39.95 59.95 1.05 1.2 1.1 1.3 1.1 1.2 1.2 2.2 GU1041 GU1041


    Original     		PDF BL301 BL301 TB-268 RFDC

    K18 diodes

    Abstract: TB268
    Text: BIAS-TEES Surface Mount ❏ 50Ω HIGH CURRENT 100 kHz to 6000 MHz JEBT MODEL NO. JEBT-4R2G JEBT-4R2GW NEW TCBT-2R5G NEW TCBT-6G INSERTION LOSS* dB ISOLATION* (dB) (RF port to DC port) (RF&DC port to DC port) VSWR* (:1) L M U Typ. Max. Typ. Max. Typ. Max.


    Original     		PDF BL301 BL301 TB-268 K18 diodes TB268

    Untitled

    Abstract: No abstract text available
    Text: BIAS-TEES Surface Mount o 50Ω HIGH CURRENT 100 kHz to 6000 MHz JEBT MODEL NO. JEBT-4R2G JEBT-4R2GW 10-4200 0.1-4200 NEW TCBT-2R5G NEW TCBT-6G 20-2500 50-6000 Note B C O N N E C T I O N 1.2 1.2 0.6 0.6 1.6 1.6 32 25 20 15 40 40 20 20 40 40 20 20 — — —


    Original     		PDF BL301 BL301 TB-268

    GU1041

    Abstract: 1gW 38
    Text: BIAS-TEES Surface Mount ❏ 50Ω HIGH CURRENT 100 kHz to 6000 MHz JEBT MODEL NO. JEBT-4R2G JEBT-4R2GW NEW TCBT-2R5G NEW TCBT-6G INSERTION LOSS* dB ISOLATION* (dB) (RF port to DC port) (RF&DC port to DC port) VSWR* (:1) L M U Typ. Max. Typ. Max. Typ. Max.


    Original     		PDF BL301 BL301 TB-268 GU1041 1gW 38

    Untitled

    Abstract: No abstract text available
    Text: BIAS-TEES Surface Mount ❏ 50Ω HIGH CURRENT 100 kHz to 6000 MHz JEBT MODEL NO. JEBT-4R2G JEBT-4R2GW NEW TCBT-2R5G NEW TCBT-6G INSERTION LOSS* dB ISOLATION* (dB) (RF port to DC port) (RF&DC port to DC port) VSWR* (:1) L M U Typ. Max. Typ. Max. Typ. Max.


    Original     		PDF BL301 BL301 TB-268

    Untitled

    Abstract: No abstract text available
    Text: IPB04CN10N G IPI04CN10N G IPP04CN10N G  2 Power-Transistor Product Summary Features R฀ 492?6=฀?@C>2=฀=6G6= R฀ I46=6?E฀82E6฀492C86฀I฀R ;I"\[#฀AC@5F4E฀! ' V ;I )( K R -@?>2I฀.)฀ +&1 Z I; )( 7 R฀/6CJ฀=@H฀@? C6D:DE2?46฀R ;I"\[#


    Original     		PDF IPB04CN10N IPI04CN10N IPP04CN10N 492C86à E2C86Eà

    T49470

    Abstract: M49470 BQ15-4 DSCC-DWG-87106 2225 capacitor footprint dimension HRSI214X7R156M1J5 1000VH microwave components catalog microwave product catalog
    Text: SMPS STACKED CAPACITORS CATALOG 1001 REV. F TABLE OF CONTENTS MIL-PRF-49470 SPECIFICATION .2 DSCC DRAWING 88011 NPO STACKED CAPACITORS .2


    Original     		PDF MIL-PRF-49470 MIL-PRF-49467 T49470 M49470 BQ15-4 DSCC-DWG-87106 2225 capacitor footprint dimension HRSI214X7R156M1J5 1000VH microwave components catalog microwave product catalog

    IPD110N12N3 G

    Abstract: No abstract text available
    Text: IPD110N12N3 G IPS110N12N3 G TM3Power-Transistor Features Product Summary R฀ 492?6=฀?@C>2=฀=6G6= V ;I *( K R ;I"\[#$>2I฀ ) Z I; /- 7 R฀ I46=6?E฀82E6฀492C86฀I฀R ;I"\[#฀AC@5F4E฀!)' R฀/6CJ฀=@H฀@? C6D:DE2?46฀R ;I"\[#


    Original     		PDF IPD110N12N3 IPS110N12N3 492C86à E2C86Eà E96CH IPD110N12N3 G

    marking 6d

    Abstract: IPP04CN10N G diode 6e
    Text: IPB04CN10N G IPI04CN10N G IPP04CN10N G "%&$!"# 2 Power-Transistor Product Summary Features V ;I R 492 ?6= ?@ C>2 =6G6= R  - @ ?>2 I. R I46=6?E82 E6 492 C86 IR ;I"\[# AC@ 5F4E!) '   I; )( K +&1 Z" )( 7 R/ 6CJ =@ H @ ? C6D:DE 2 ?46 R ;I"\[#


    Original     		PDF IPB04CN10N IPI04CN10N IPP04CN10N marking 6d IPP04CN10N G diode 6e

    marking 9D

    Abstract: sd marking 8H IPP06CN10N PG-TO220-3 A6c DIODE
    Text: IPB06CN10N G IPI06CN10N G IPP06CN10N G "%&$!"# 2 Power-Transistor Product Summary Features R 492 ?6= ?@ C>2 =6G6= R I46=6?E82 E6 492 C86 IR ;I"\[# AC@ 5F4E! '  V ;I )( K R  - @ ?>2 I.)     .&* Z" I; )( 7 R/ 6CJ =@ H @ ? C6D:DE 2 ?46 R ;I"\[#


    Original     		PDF IPB06CN10N IPI06CN10N IPP06CN10N 8976BF6 marking 9D sd marking 8H PG-TO220-3 A6c DIODE

    Untitled

    Abstract: No abstract text available
    Text: IPB05CN10N G IPI05CN10N G IPP05CN10N G  2 Power-Transistor Product Summary Features R฀ 492?6=฀?@C>2=฀=6G6= R฀ I46=6?E฀82E6฀492C86฀I฀R ;I"\[#฀AC@5F4E฀! ' V ;I )( K R -@?>2I฀.)฀ -&) Z I; )( 7 R฀/6CJ฀=@H฀@? C6D:DE2?46฀R ;I"\[#


    Original     		PDF IPB05CN10N IPI05CN10N IPP05CN10N 492C86à E2C86Eà

    marking 6d

    Abstract: IPD110N12N3 G
    Text: IPD110N12N3 G IPS110N12N3 G "%&$!"#TM3Power-Transistor Features Product Summary R 492 ?6= ?@ C>2 =6G6= V ;I *( K R ;I"\[#$>2 I ) Z" I; /- 7 R I46=6?E82 E6 492 C86 IR ;I"\[# AC@ 5F4E!) '  R/ 6CJ =@ H @ ? C6D:DE 2 ?46 R ;I"\[# R   U @ A6C2 E:?8 E6>A6C2 E


    Original     		PDF IPD110N12N3 IPS110N12N3 8976BF6 marking 6d IPD110N12N3 G

    IPP054NE8N

    Abstract: FX23L-100S-0.5SV
    Text: IPB051NE8N G IPI05CNE8N G IPP054NE8N G "%&$!"# 2 Power-Transistor Product Summary Features V ;I R 492 ?6= ?@ C>2 =6G6= R  - @ ?>2 I. R I46=6?E82 E6 492 C86 IR ;I"\[# AC@ 5F4E!) '   I; 0- K -&) Z" )( 7 R/ 6CJ =@ H @ ? C6D:DE 2 ?46 R ;I"\[#


    Original     		PDF IPB051NE8N IPI05CNE8N IPP054NE8N 8976BF6 FX23L-100S-0.5SV

    IPP05CN10N

    Abstract: No abstract text available
    Text: IPB05CN10N G IPI05CN10N G IPP05CN10N G "%&$!"# 2 Power-Transistor Product Summary Features V ;I R 492 ?6= ?@ C>2 =6G6= R  - @ ?>2 I. R I46=6?E82 E6 492 C86 IR ;I"\[# AC@ 5F4E!) '   I; )( K -&) Z" )( 7 R/ 6CJ =@ H @ ? C6D:DE 2 ?46 R ;I"\[#


    Original     		PDF IPB05CN10N IPI05CN10N IPP05CN10N 8976BF6

    marking J6c

    Abstract: marking 6C marking 09D marking 6c 7
    Text: IPB08CNE8N G IPI08CNE8N G IPP08CNE8N G "%&$!"# 2 Power-Transistor Product Summary Features R 492 ?6= ?@ C>2 =6G6= R I46=6?E82 E6 492 C86 IR ;I"\[# AC@ 5F4E! '  V ;I 0- K R  - @ ?>2 I.)     0&* Z" I; 1- 7 R/ 6CJ =@ H @ ? C6D:DE 2 ?46 R ;I"\[#


    Original     		PDF IPB08CNE8N IPI08CNE8N IPP08CNE8N marking J6c marking 6C marking 09D marking 6c 7

    DIODE 5c2 5t

    Abstract: No abstract text available
    Text: IPB144N12N3 G IPI147N12N3 G IPP147N12N3 G  3 Power-Transistor Product Summary Features R฀ 492?6=฀?@C>2=฀=6G6= R฀ I46=6?E฀82E6฀492C86฀I฀R ;I"\[#฀AC@5F4E฀! ' V ;I )*( K R -@?>2I฀ ),&/ Z I; -. 7 R฀/6CJ฀=@H฀@? C6D:DE2?46฀R ;I"\[#


    Original     		PDF IPB144N12N3 IPI147N12N3 IPP147N12N3 492C86à E2C86Eà DIODE 5c2 5t

    marking 6d

    Abstract: IPP147N12N
    Text: IPB144N12N3 G IPI147N12N3 G IPP147N12N3 G "%&$!"# 3 Power-Transistor Product Summary Features R 492 ?6= ?@ C>2 =6G6= R I46=6?E82 E6 492 C86 IR ;I"\[# AC@ 5F4E! '  V ;I )*( K R  - @ ?>2 I ),&/ Z" -. I; 7 R/ 6CJ =@ H @ ? C6D:DE 2 ?46 R ;I"\[#


    Original     		PDF IPB144N12N3 IPI147N12N3 IPP147N12N3 marking 6d IPP147N12N

    RK73-RT

    Abstract: RK73G-RT WK73-RT hr r 681k- 1kv A/SG73P1E WK73S2 SG73S2E sec 472m sf MOS2CT52 RK73H-RT
    Text: KOA SPEER ELECTRONICS, INC. passive components 199 Bolivar Drive Bradford, PA 16701 Phone: 814-362-5536 Fax: 814-362-8883 www.koaspeer.com KOA SPEER ELECTRONICS, INC. AHA 12/14 2.5M KOA Speer Electronics, Inc. Printed in U.S.A. passive components KOA Speer’s


    Original     		PDF

    ssq21635

    Abstract: MIL-C-81582 M81582 D38999/49 NATC07 test required
    Text: Qwik Connect GLENAIR n A p ril 2011 n VOLUME 15 n NUMBER 2 Connector Reference Guide QwikConnect WELCOME INTERCONNECT PROFESSIONALS! Series 80 “Mighty Mouse” Connectors H igh performance MS type electrical connectors have been around since the late ’30s.


    Original     		PDF

    M39029/88

    Abstract: 40M38298 D38999/49
    Text: Qwik Connect GLENAIR n A p ril 2011 n VOLUME 15 n NUMBER 2 Connector Reference Guide QwikConnect WELCOME INTERCONNECT PROFESSIONALS! H igh performance MS type electrical connectors have been around since the late ’30s. As military and aerospace electronics became more prevalent and sophisticated, so did


    Original     		PDF MIL-DTL-38999 M39029/88 40M38298 D38999/49

    190-22B2UO

    Abstract: 190-22E2UO 190-22C2UO 48vdc relay circuit diagram 24 VDC 190-22B2UO 190-22e 190-22E2U E55708
    Text: Catalog 1308242 Issued 3-03 P&B 190 series 2 Amp, DPDT, High Sensitivity, DIP PC Board Relay File E55708 File LR73303 Users should thoroughly review the technical data before selecting a product part number. It is recommended that users also seek out the pertinent approvals files of


    Original     		PDF E55708 LR73303 16-pin 48VDC 500-580mW) 360mW) 150-200mW) 190-22B2UO 190-22C2UO 190-22E2UO 190-22B2UO 190-22E2UO 190-22C2UO 48vdc relay circuit diagram 24 VDC 190-22B2UO 190-22e 190-22E2U E55708

    Untitled

    Abstract: No abstract text available
    Text: MIL-PRF-49470 ELECTRICAL AND PERFORMANCE CHARACTERISTICS ALL CHARACTERISTICS AND TEST METHODS IAW MIL-PRF-49470 ELECTRICAL CHARACTERISTICS Rated Voltage: 50/100/200/500 volts. Temperature Coefficient: Dielectric Type Bias = 0 Volt Bias = Rated Voltage BP All Voltages


    Original     		PDF MIL-PRF-49470 MIL-PRF-49470) 30PPM 50/100V

    LC 7995

    Abstract: No abstract text available
    Text: Bias-Tees 50 Q Surface MountJ High Current 100 kHz to6000 MHz JEBT INSERTION LOSS*, dB FREQ. RANGE MHz MODEL NO. H CASE STYLE ISOLATION*, C» RF-DC, RF&DC-DC L M u L M u Typ. Max. Typ. Max. Typ. M ax. iy p . Min. Typ. Min. Typ . Min. Note B JEBT-4R2G JEBT-6G


    OCR Scan     		PDF to6000 BL301 LC 7995

    FLR024FH

    Abstract: FLX102MH-12 flx202mh-12 FLS09ME FLS09 FLR016XP FLR014XP FLR014FH FSC10FA FLR056XV
    Text: - 138 - S £ tt € m & i* » f t ; ht * * m £ V P d /P c h 1 * * m K V * (V) (A) * * (W> Ig s s (max) (A) Vg s (V) (min) (A) % (max) V d s (A) (V) ft ¡8 fé (min) (V) (max) V d s (V) (V) (Ta=25°C) (min) (S) Id (A) Vd s (V) Id (A) .2.2 FLM7785-8C/D


    OCR Scan     		PDF FLM7785-8C/D FLM8596-4C FLM8596-8C FLR014FH FLR014XP FLC311MG-4 FLS31ME 36dBm, FLS50 FLR024FH FLX102MH-12 flx202mh-12 FLS09ME FLS09 FLR016XP FLR014FH FSC10FA FLR056XV