2007VER Search Results

1020 mosfet

Abstract: LTP50N06
Contextual Info: LTP50N06 N-Channel 60V Power MOSFET VDS=60V Vgs@10V, RDS ON ≦ 22mΩ FEATURES Minimize input capacitance and gate charge Specially designed for DC/DC converters and DC motor control PIN CONFIGURATION (TO-220) Top View Absolute Maximum Ratings (TA=25℃ Unless Otherwise Noted)

Contextual Info: LT2306A N-Channel Enhancement Mode MOSFET GENERAL DESCRIPTION FEATURES The LT2306A is the N-Channel logic enhancement mode power field ● RDS ON =30mΩ@VGS=10V effect transistors, using high cell density, DMOS trench technology. ● RDS(ON)=35mΩ@VGS=4.5V

Dual N-Channel MOSFET SOP8

Abstract: LT4936
Contextual Info: LT4936 Dual N-Channel 30-V Power MOSFET GENERAL DESCRIPTION FEATURES The LT4936 is the Dual N-Channel logic enhancement ● RDS ON ≦36mΩ@VGS=10V mode power field effect transistors are produced using ● RDS(ON)≦45mΩ@VGS=4.5V high cell density, DMOS trench technology. This high

P-Channel mosfet 40V

Abstract: Vgs 40V mosfet
Contextual Info: LT4565 N- and P-Channel 40-V Power MOSFET GENERAL DESCRIPTION FEATURES The LT4565 is the N- and P-Channel logic enhancement mode ● RDS ON ≦40mΩ@VGS=10V (N-Ch) power field effect transistors are produced using high cell density , ● RDS(ON)≦45mΩ@VGS=4.5V (N-Ch)

1020 mosfet

Abstract: LTP50N06
Contextual Info: LTP50N06 N-Channel 60V Power MOSFET VDS=60V Vgs@10V, RDS ON ≦ 20mΩ FEATURES Minimize input capacitance and gate charge Specially designed for DC/DC converters and DC motor control PIN CONFIGURATION (TO-220) Top View Absolute Maximum Ratings (TA=25℃ Unless Otherwise Noted)

20107

Contextual Info: LT4544 N- and P-Channel 30-V Power MOSFET GENERAL DESCRIPTION FEATURES The LT4544 is the N- and P-Channel logic enhancement mode ● RDS ON ≦28mΩ@VGS=10V (N-Ch) power field effect transistors are produced using high cell density , ● RDS(ON)≦42mΩ@VGS=4.5V (N-Ch)

mosfet tv lcd

Contextual Info: LT4544C N- and P-Channel 30-V Power MOSFET GENERAL DESCRIPTION FEATURES The LT4544C is the N- and P-Channel logic enhancement mode ● RDS ON ≦28mΩ@VGS=10V (N-Ch) power field effect transistors are produced using high cell density , ● RDS(ON)≦42mΩ@VGS=4.5V (N-Ch)

LT4542C

Contextual Info: LT4542C N- and P-Channel 30-V Power MOSFET GENERAL DESCRIPTION FEATURES The LT4542C is the N- and P-Channel logic enhancement mode ● 30V/6.7A,RDS ON =25mΩ@VGS=10V (N-Ch) power field effect transistors are produced using high cell density , ● 30V/5.0A,RDS(ON)=40mΩ@VGS=4.5V (N-Ch)

Marking Code k72

Abstract: code k72 k72 diode K72 marking diode LT2N7002D
Contextual Info: LT2N7002D N-Channel Power MOSFET – ESD GENERAL DESCRIPTION FEATURES The LT2N7002D is the N-Channel logic enhancement mode power ● Simple Drive Requirement field effect transistors are produced using high cell density , DMOS ● Small Package Outline trench technology. This high density process is especially tailored to

Contextual Info: LT4544C N- and P-Channel 30-V Power MOSFET GENERAL DESCRIPTION FEATURES The LT4544C is the N- and P-Channel logic enhancement mode ● RDS ON ≦28mΩ@VGS=10V (N-Ch) power field effect transistors are produced using high cell density , ● RDS(ON)≦42mΩ@VGS=4.5V (N-Ch)

sep 67a

Abstract: sep 61a LT4542C
Contextual Info: LT4542C N- and P-Channel 30-V Power MOSFET GENERAL DESCRIPTION FEATURES The LT4542C is the N- and P-Channel logic enhancement mode ● 30V/6.7A,RDS ON =25mΩ@VGS=10V (N-Ch) power field effect transistors are produced using high cell density , ● 30V/5.0A,RDS(ON)=40mΩ@VGS=4.5V (N-Ch)

LT4936

Contextual Info: LT4936 Dual N-Channel 30-V Power MOSFET GENERAL DESCRIPTION FEATURES The LT4936 is the Dual N-Channel logic enhancement ● RDS ON ≦36mΩ@VGS=10V mode power field effect transistors are produced using ● RDS(ON)≦45mΩ@VGS=4.5V high cell density, DMOS trench technology. This high

ME4565

Abstract: p-channel DMOS
Contextual Info: ME4565 N- and P-Channel 40-V Power MOSFET GENERAL DESCRIPTION FEATURES The LT4565 is the N- and P-Channel logic enhancement mode ● RDS ON ≦40mΩ@VGS=10V (N-Ch) power field effect transistors are produced using high cell density , ● RDS(ON)≦45mΩ@VGS=4.5V (N-Ch)

LT4946

Abstract: Dual N-Channel MOSFET SOP8 60V dual N-Channel trench mosfet inverter ccfl
Contextual Info: LT4946 Dual N-Channel 60-V Power MOSFET GENERAL DESCRIPTION FEATURES The LT4946 is the Dual N-Channel logic enhancement mode power ● RDS ON ≦41mΩ@VGS=10V field effect transistors are produced using high cell density, DMOS ● RDS(ON)≦52mΩ@VGS=4.5V

LR6209B

Contextual Info: LESHAN RADIO COMPANY, LTD. High PSRR Low Dropout Voltage 250mA CMOS LDO Regulator LR6209 Series INTRODUCTION FEATURE The LR6209 Series are a group of positive voltage regulators manufactured by CMOS technologies with high ripple rejection, extremely low power consumption and low

Contextual Info: LT4946 Dual N-Channel 60-V Power MOSFET GENERAL DESCRIPTION FEATURES The LT4946 is the Dual N-Channel logic enhancement mode power ● RDS ON ≦41mΩ@VGS=10V field effect transistors are produced using high cell density, DMOS ● RDS(ON)≦52mΩ@VGS=4.5V

LT4542

Contextual Info: LT4542 N- and P-Channel 30-V Power MOSFET GENERAL DESCRIPTION FEATURES The LT4542 is the N- and P-Channel logic enhancement mode ● RDS ON ≦25mΩ@VGS=10V (N-Ch) power field effect transistors are produced using high cell density , ● RDS(ON)≦40mΩ@VGS=4.5V (N-Ch)

LT4946

Abstract: 60V dual N-Channel trench mosfet LT-494 Dual N-Channel MOSFET SOP8
Contextual Info: LT4946 Dual N-Channel 60-V Power MOSFET GENERAL DESCRIPTION FEATURES The LT4946 is the Dual N-Channel logic enhancement mode power ● RDS ON ≦41mΩ@VGS=10V field effect transistors are produced using high cell density, DMOS ● RDS(ON)≦52mΩ@VGS=4.5V

Ta7070

Contextual Info: LT2306A N-Channel Enhancement Mode MOSFET GENERAL DESCRIPTION FEATURES The LT2306A is the N-Channel logic enhancement mode power field ● RDS ON =30mΩ@VGS=10V effect transistors, using high cell density, DMOS trench technology. ● RDS(ON)=35mΩ@VGS=4.5V

Contextual Info: LT2302 N-Channel Enhancement Mode MOSFET GENERAL DESCRIPTION FEATURES The LT2302 is the N-Channel logic enhancement mode power field ● RDS ON ≦85mΩ@VGS=4.5V effect transistors, using high cell density, DMOS trench technology. ● RDS(ON) ≦115mΩ@VGS=2.5V

LT4542

Contextual Info: LT4542 N- and P-Channel 30-V Power MOSFET GENERAL DESCRIPTION FEATURES The LT4542 is the N- and P-Channel logic enhancement mode ● RDS ON ≦25mΩ@VGS=10V (N-Ch) power field effect transistors are produced using high cell density , ● RDS(ON)≦40mΩ@VGS=4.5V (N-Ch)

LT2302

Contextual Info: LT2302 N-Channel Enhancement Mode MOSFET GENERAL DESCRIPTION FEATURES The LT2302 is the N-Channel logic enhancement mode power field ● RDS ON ≦85mΩ@VGS=4.5V effect transistors, using high cell density, DMOS trench technology. ● RDS(ON) ≦115mΩ@VGS=2.5V