2008.07.28 Search Results

2008.07.28 Result Highlights (4)

Part	ECAD Model	Manufacturer	Description	Download	Buy
TPN12008QM		Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 80 V, 26 A, 0.0123 Ohm@10V, TSON Advance
TSC2008IYZGT		Texas Instruments	Nano-Power Touch Screen Controller with SPI 12-DSBGA -40 to 85
LMZ12008TZE/NOPB		Texas Instruments	8A SIMPLE SWITCHER® Power Module with 20V Maximum Input Voltage 11-PFM -40 to 85
TSC2008IRGVT		Texas Instruments	Nano-Power Touch Screen Controller with SPI 16-VQFN -40 to 85

2008.07.28 Price and Stock

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HARTING Technology Group 09120080728 CONN HOOD COUPLING BOTTOM ENTRY
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	09120080728	Bulk			10	1 - 10 $16.562 100 $16.562 1000 $16.562 10000 $16.562	Buy Now
Newark	09120080728	Bulk			10	1 - 10 $20.69 100 $16 1000 $14.58 10000 $14.58	Buy Now
RS	09120080728	Bulk		11 Weeks	10	1 - 10 $20.9 100 $16.72 1000 $16.72 10000 $16.72	Get Quote
TME	09120080728		8		1	1 $12.86 10 $10.04 100 $10.04 1000 $10.04 10000 $10.04	Buy Now
Neutron USA	09120080728		7			1 $131.59 10 $131.59 100 $131.59 1000 $131.59 10000 $131.59	Buy Now

2008.07.28 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: 3VD250600YL 3VD250600YL HIGH VOLTAGE MOSFET CHIPS DESCRIPTION ¾ 3VD250600YL is a High voltage N-Channel enhancement mode power MOS-FET chip fabricated in advanced silicon epitaxial planar technology. 11 ¾ Advanced termination scheme to provide enhanced 3	Original	3VD250600YL 3VD250600YL O-251	PDF
Contextual Info: 2SB075030MLJL 2SB075030MLJL SCHOTTKY BARRIER DIODE CHIPS DESCRIPTION ¾ 2SB075030MLJL is a schottky barrier diode chips fabricated in silicon epitaxial planar technology; ¾ Low power losses, high efficiency; ¾ Guard ring construction for transient protection;	Original	2SB075030MLJL 2SB075030MLJL	PDF
2n60 MOSFEt Abstract: 2N60 2008.07.28 2n60 equivalent mosfet Vds 30 Vgs 25 Contextual Info: 3VD250600YL 3VD250600YL 高压MOSFET芯片描述 ¾ 3VD250600YL为采用硅外延工艺制造的N沟道增强型600V高压MOS功率场效应晶体管； ¾ 先进的高压分压终止环结构； 11 ¾ 较高的雪崩能量； 3 ¾ 漏源二极管恢复时间快；	Original	3VD250600YL 3VD250600YL 3VD250600YLN 600VMOS O-251 600VVGS 10VID 30VVDS 2n60 MOSFEt 2N60 2008.07.28 2n60 equivalent mosfet Vds 30 Vgs 25	PDF
Contextual Info: 3VD396500YL 3VD396500YL HIGH VOLTAGE MOSFET CHIPS DESCRIPTION ¾ 3VD396500YL is a High voltage N-Channel enhancement mode power MOS-FET chip fabricated in advanced silicon epitaxial planar technology; ¾ Advanced termination scheme to provide enhanced voltage-blocking capability;	Original	3VD396500YL 3VD396500YL O-220	PDF