200806 Search Results
200806 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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LQ5AW136R
Abstract: LQ5AW136 PCN-20080630-01
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PCN-20080630-01 LQ5AW136 LQ5AW136R, LQ5AW136R LQ5AW136R. PCN-20080530-01 PCN-20080630-01 | |
Contextual Info: SMD High Voltage Transistors Part No. MMBT5550 MMBT5551 MMBTA42 MMBT6517 MMBT5400 MMBT5401 MMBTA92 MMBT6520 20080612 Device VCEO Marking Polarity Code V 1F 140 G1 160 NPN 1D 300 1Z 350 K2 120 2L 150 PNP 2D 300 2Z 350 hFE @ VCE & IC IC (A) 0.6 0.6 0.5 0.5 |
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MMBT5550 MMBT5551 MMBTA42 MMBT6517 MMBT5400 MMBT5401 MMBTA92 MMBT6520 | |
diode sg 47
Abstract: AN1476 LED60 LED50 tp10 tp9 tp8 tp7 tp6 tp5 tp4 tp3 jp1 FDMA530PZ LED34 0X00 ISL97635 ISL97636
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ISL97635 ISL97635-20080614 ISL97635EVALZ AN1476 LED11 LED46 ISL97635 LED37 LED28 diode sg 47 LED60 LED50 tp10 tp9 tp8 tp7 tp6 tp5 tp4 tp3 jp1 FDMA530PZ LED34 0X00 ISL97636 | |
GP2Y0A700K0F
Abstract: GP2Y0A710K0F 200806
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PCN-20080612-01 GP2Y0A700K0F GP2Y0A700K0F. GP2Y0A710K0F GP2Y0A700K0F GP2Y0A710K0F PCN-20080612-01 200806 | |
e187565
Abstract: e187565 -94v LQ121S1LG41 LQ104V1DG21 LQ10D368 inch lcd lq10d42 LQ104V1DG51 LQ10D421 LQ121S1DG41
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PCN-20080620-01 10-inch LQ10D368 LQ10D421 LQ104V1DG21 LQ104V1DG51 12-inch LQ121S1DG41 LQ121S1LG41 E187565) e187565 e187565 -94v LQ121S1LG41 LQ104V1DG21 LQ10D368 inch lcd lq10d42 LQ104V1DG51 LQ10D421 LQ121S1DG41 | |
LT 5265
Abstract: 68142 Vishay MKP certificate 68183 68168 IEC 68-2-63 68534 68239 2222 376 61333 68154
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MKP338 168x12 AEC-Q200 2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 LT 5265 68142 Vishay MKP certificate 68183 68168 IEC 68-2-63 68534 68239 2222 376 61333 68154 | |
OS-PCN-2010-033-A
Abstract: LED OSRAM Power Topled LA E65F red LY E65F
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OS-PCN-2010-033-A) D-93055 OS-PCN-2010-033-A LED OSRAM Power Topled LA E65F red LY E65F | |
MARKING V7 6-PINContextual Info: 74LVC3G14 Triple inverting Schmitt trigger with 5 V tolerant input Rev. 11 — 6 July 2012 Product data sheet 1. General description The 74LVC3G14 provides three inverting buffers with Schmitt trigger input. It is capable of transforming slowly changing input signals into sharply defined, jitter-free output signals. |
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74LVC3G14 74LVC3G14 MARKING V7 6-PIN | |
Marking code V7Contextual Info: 74LVC2G00 Dual 2-input NAND gate Rev. 11 — 22 June 2012 Product data sheet 1. General description The 74LVC2G00 provides a 2-input NAND gate function. Inputs can be driven from either 3.3 V or 5 V devices. This feature allows the use of these devices as translators in a mixed 3.3 V and 5 V environment. |
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74LVC2G00 74LVC2G00 Marking code V7 | |
LPC2000
Abstract: LPC2458 LPC2458FET180 TFBGA180 m81I
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LPC2458 16-bit/32-bit LPC2458 16-bit/32-bit 128-bit LPC2000 LPC2000 LPC2458FET180 TFBGA180 m81I | |
BUK9Y14-40BContextual Info: BUK9Y14-40B N-channel TrenchMOS logic level FET Rev. 03 — 2 June 2008 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using NXP High Performance Automotive (HPA) TrenchMOS technology. This |
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BUK9Y14-40B BUK9Y14-40B | |
LCD Controller
Abstract: IC 1032 EQUIVALENT C100 C101 C102 C103 C104 C105 C127 PCF8811
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PCF8811 PCF8811 LCD Controller IC 1032 EQUIVALENT C100 C101 C102 C103 C104 C105 C127 | |
74LVC1G53
Abstract: 74LVC1G53DC 74LVC1G53DP 74LVC1G53GD 74LVC1G53GT JESD22-A114E MO-187 V53 TSSOP8
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74LVC1G53 74LVC1G53 74LVC1G53DC 74LVC1G53DP 74LVC1G53GD 74LVC1G53GT JESD22-A114E MO-187 V53 TSSOP8 | |
HWQFN48
Abstract: PTN3300AHF PTN3300AHF2
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PTN3300A PTN3300A HWQFN48 PTN3300AHF PTN3300AHF2 | |
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74LVC2G241
Abstract: 74LVC2G241DC 74LVC2G241DP 74LVC2G241GD 74LVC2G241GM 74LVC2G241GT JESD22-A114E
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74LVC2G241 74LVC2G241 74LVC2G241DC 74LVC2G241DP 74LVC2G241GD 74LVC2G241GM 74LVC2G241GT JESD22-A114E | |
NJM2754
Abstract: NJM2754V SSOP20 T105
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NJM2754 NJM2754V SSOP20 -40oC NJM2754 NJM2754V SSOP20 T105 | |
APE1503
Abstract: APE1503A
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APE1503 APE1503/A APE1503 APE1503A | |
Contextual Info: 1/4 REMINDERS Please read this before using the product. SAFETY REMINDERS REMINDERS 1. If you intend to use a product listed in this catalog for a purpose that may cause loss of life or other damage, you must contact our company’s sales window. 2. We may modify products or discontinue production of a product listed in this catalog without prior notification. |
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accordCKD110JB 100pF 220pF 470pF 1000pF 2200pF CKD310JB | |
ap4405
Abstract: AP4405GM 4405GM
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AP4405GM 4405GM ap4405 AP4405GM 4405GM | |
NJG1647HD
Abstract: mlg0603 NJG1647HD3
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NJG1647HD3 NJG1647HD3 70dBm 24dBm, -70dBc 35dBm, NJG1647HD mlg0603 | |
Contextual Info: SSM6L36TU TOSHIBA Field-Effect Transistor Silicon N / P Channel MOS Type SSM6L36TU Unit: mm ○ High-Speed Switching Applications 2.1±0.1 Ron = 1.14Ω max (@VGS = 1.8 V) Ron = 0.85Ω (max) (@VGS = 2.5 V) Ron = 0.66Ω (max) (@VGS = 4.5 V) 1 6 2 5 3 4 0.7±0.05 |
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SSM6L36TU | |
power supply 10w 12v
Abstract: AC DC 10w AC DC Switch power 10w MDR-10-24 10w led 956 relay MDR-10-12 10w power led EMI FILTER 24V LED 10w 12v dc
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MDR-10 TS-35/7 MDR-10-12 MDR-10-15 MDR-10-24 MDR-10-5 120mVp-p 80mVp-p MDR-10-SPEC power supply 10w 12v AC DC 10w AC DC Switch power 10w MDR-10-24 10w led 956 relay MDR-10-12 10w power led EMI FILTER 24V LED 10w 12v dc | |
SSM3J36FSContextual Info: SSM3J36FS TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM3J36FS ○ Power Management Switches • • 1.5-V drive Low ON-resistance: Ron = 3.60 Ω max (@VGS = -1.5 V) : Ron = 2.70 Ω (max) (@VGS = -1.8 V) : Ron = 1.60 Ω (max) (@VGS = -2.8 V) |
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SSM3J36FS SSM3J36FS | |
TC4SU69FContextual Info: TC4SU69F 1 2008-06-03 TC4SU69F 2 2008-06-03 TC4SU69F 3 2008-06-03 TC4SU69F 4 2008-06-03 TC4SU69F 当社半導体製品取り扱い上のお願い 20070701-JA GENERAL • 当社は品質,信頼性の向上に努めておりますが,一般に半導体製品は誤作動したり故障することがあります。当 |
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TC4SU69F 20070701-JA TC4SU69F |