200BX Search Results

WED3C750A8M-200BX

Contextual Info: WED3C750A8M-200BX HI-RELIABILITY PRODUCT RISC Microprocessor Module PRELIMINARY* OVERVIEW The WED3C750A8M-200BX is offered in industrial -40°C to +85°C and military (-55°C to +125°C) temperature ranges and is well suited for embedded applications such as missiles, aerospace, flight

Contextual Info: 200BX BOX HEADER CONNECTOR SYSTEM .079”x.079” 2.0x2.0mm pitch MATERIAL : PBT+30% GF UL 94V-0 BRASS GOLD FLASH CURRENT RATING : 1A AC,DC VOLTAGE RATING : 150V AC,DC CONTACT RESISTANCE : 20m Ÿ MAX INSULATION RESISTANCE : 100M Ÿ MIN WITHSTANDING VOLTAGE : 250V AC/MINUTE

WED3C750A8M-200BX

Contextual Info: PowerPC 750 /8Mbit SSRAM Multi-Chip Package Optimum Density and Performance in One Package WED3C7508M-200BX Features • • • A 200 MHz 750 RISC µProcessor 8 Mbit of Synchronous pipeline burst SRAM configured as 128Kx72 L2 Cache Extended temperature modules for industrial and military applications

Contextual Info: WED3C750A8M-200BX HI-RELIABILITY PRODUCT RISC Microprocessor Module PRELIMINARY* OVERVIEW The WED3C750A8M-200BX is offered in industrial -40°C to +85°C and military (-55°C to +125°C) temperature ranges and is well suited for embedded applications such as missiles, aerospace, flight

WED3C7508M-200BX

Abstract: WED3C750A8M-200BX WEDPN8M72V-XBX
Contextual Info: PowerPC 750 /8Mbit SSRAM Multi-Chip Package WED3C750A8M Product Sheet Rev. 1 5/01 Optimum Density and Performance in One Package WED3C7508M-200BX Features • • • A 200 MHz 750 RISC µProcessor 8 Mbit of Synchronous pipeline burst SRAM configured as 128Kx72 L2 Cache

C1B4

Contextual Info: WED3C750A8M-200BX HI-RELIABILITY PRODUCT RISC Microprocessor Module PRELIMINARY* OVERVIEW The WED3C750A8M-200BX is offered in industrial -40°C to +85°C and military (-55°C to +125°C) temperature ranges and is well suited for embedded applications such as missiles, aerospace, flight

WED3C750A8M-200BX

Contextual Info: White Electronic Designs WED3C750A8M-200BX RISC Microprocessor Module OVERVIEW • Maximum L2 Cache frequency = 100MHz The WEDC 750/SSRAM module is targeted for high performance, space sensitive, low power systems and supports the following power management features:

WED3C750A8M

Contextual Info: WED3C750A8M-200BX RISC Microprocessor Module OVERVIEW The WEDC 750/SSRAM module is targeted for high performance, space sensitive, low power systems and supports the following power management features: doze, nap, sleep and dynamic power management. The WED3C750A8M-200BX is offered in industrial -40°C to +85°C

WED3C750A8M-200BX

Contextual Info: WED3C750A8M-200BX HI-RELIABILITY PRODUCT RISC Microprocessor Module PRELIMINARY* OVERVIEW The WED3C750A8M-200BX is offered in industrial -40°C to +85°C and military (-55°C to +125°C) temperature ranges and is well suited for embedded applications such as missiles, aerospace, flight

Contextual Info: intJ. 2-MBIT 128K x 16, 256K x 8 LOW-POWER BOOT BLOCK FLASH MEMORY FAMILY 28F200BL-T/B, 28F002BL-T/B m Low Voltage Operation for Very Low Power Portable Applications — Vcc = 3.0V-3.6 V • Automatic Power Savings Feature — 0.8 mA Typical Ice Active Current in

Contextual Info: o M F O T E M in ] « ] A28F200BR-T/B 2-MBIT 128K x 16, 256K x 8 SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY Automotive • Intel SmartVoltage Technology — 5V or 12V Program/Erase — 5V Read Operation ■ Very High Performance Read — 80 ns Max. Access Time,

Contextual Info: A O m r c i ! O M F O K fifflÄ T T O O K I in te l A28F200BR-T/B 2-MBIT 128K x 1 6 ,256K x 8 SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY Automotive Intel SmartVoltage Technology — 5V or 12V Program/Erase — 5V Read Operation Very High Performance Read

intel e28f

Abstract: 28f400 BYTE PROGRAM
Contextual Info: [p[M3 [G>U T [P^lWOIl in te l 4-MBIT 256K x 16, 512K x 8) SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY 28F400BV-T/B, 28F004BV-T/B, 28F400CV-T/B Intel Sm artVoltage Technology — 5V or 12V Pro g ram /E rase — 3.3V or 5V Read O peration — 60% Faster Typical Program m ing at

Contextual Info: PRODUCT PREVIEW Smart5 BOOT BLOCK FLASH MEMORY FAMILY 2, 4, 8 MBIT 28F200B5, 28F400B5, 28F800B5 • SmartVoltage Technology — Smart5™ Flash: 5V Reads, 5V or 12V Writes — Increased Programming Throughput at 12V V pp ■ Very High-Performance Read — 2-, 4-Mbit: 60 ns Access Time

3165* intel

Abstract: 82360SL intel 80386SL twc np 6001 28f200 tsop intel 28f200bx 28F002BX 28F002BX-B 28F002BX-T 28F200BX
Contextual Info: INTEL CORP HEHORY/PLD/ SbE D • 4fl2bl?b 007bBS3 flTb m i T L Z 0M lF K ß ! ilÄ T 0®If!!] in te l 'T W o 'K V ¿ k 200BX-T/B, 28F002BX-T/B 2 MBIT (128K x 16, 256K x 8 BOOT BLOCK FLASH MEMORY FAMILY x8/x16 Input/Output Architecture — 200BX-T, 200BX-B

82371FB

Abstract: 28F002BC 82437fx 36A4
Contextual Info: E n n n n n n PRELIMINARY 28F002BC 2-MBIT 256K X 8 BOOT BLOCK FLASH MEMORY High Performance Read  80/120 ns Max Access Time 40 ns Max. Output Enable Time Low Power Consumption  20 mA Typical Read Current x8-Only Input/Output Architecture  Space-Constrained 8-bit

29053

Contextual Info: [p[F3 [U ©T 1PIF3G in te i 8-MBIT 512K X 16,1024K X 8) SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY 28F800BV-T/B, 28F800CV-T/B, 28F008BV-T/B, 28F800CE-T/B, 28F008BE-T/B • Intel SmartVoltage Technology — 5V or 12V Program/Erase — 2.7V, 3.3V or 5V Read Operation

Contextual Info: 2-MBIT 128K x 16, 256K x 8 LOW-POWER BOOT BLOCK FLASH MEMORY FAMILY 28F200BL-T/B , 28F 002B L-T/B • SRAM-Compatible Write Interface ■ Low Voltage Operation for Very Low Power Portable Applications — VCc - 3.0V-3.6V ■ Automatic Power Savings Feature

intel ab28f200 flash

Abstract: intel ab28F200 intel 28F200 AB28F200BR-B80 AB28F200
Contextual Info: E ADVANCE INFORMATION A28F200BR-T/B 2-MBIT 128K X 16, 256K X 8 SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY Automotive n n n n n n n n n Intel SmartVoltage Technology  5V or 12V Program/Erase  5V Read Operation Very High Performance Read  80 ns Max. Access Time,

28F002BC

Abstract: P28F002BC-T120 82437fx
Contextual Info: E n n n n n n PRELIMINARY 28F002BC 2-MBIT 256K X 8 BOOT BLOCK FLASH MEMORY High Performance Read  80/120 ns Max. Access Time 40 ns Max. Output Enable Time Low Power Consumption  20 mA Typical Read Current x8-Only Input/Output Architecture  Space-Constrained 8-bit

28F800

Abstract: 28f800 errata intel pa28f800
Contextual Info: E PRELIMINARY 8-MBIT 512K X 16, 1024K X 8 SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY 28F800BV-T/B, 28F800CV-T/B, 28F008BV-T/B 28F800CE-T/B, 28F008BE-T/B n n n n n n n n Intel SmartVoltage Technology  5V or 12V Program/Erase  2.7V, 3.3V or 5V Read Operation

T28F400

Abstract: intel 28F400bx E28F400BX-B60 interfacing of memory devices with 80286 microprocessor 80286 internal architecture 28F004BX-B 28F004BX-T 28F400BX-B 28F400BX-T E28F400BX-T60
Contextual Info: 4-MBIT 256K X 16 512K X 8 BOOT BLOCK FLASH MEMORY FAMILY 28F400BX-T B 28F004BX-T B Y x8 x16 Input Output Architecture 28F400BX-T 28F400BX-B For High Performance and High Integration 16-bit and 32-bit CPUs Y Very High-Performance Read 60 80 120 ns Maximum Access Time

1A14A

Abstract: T28F200 28F400-T
Contextual Info: in te l PRELIMINARY 4-MBIT 256K X 16, 512K X 8 SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY 28 F 4 0 0 B V -T /B , 28 F 4 0 0 C V -T /B , 2 8 F 0 0 4 B V -T /B 2 8 F 4 0 0 C E -T /B , 2 8 F 0 0 4 B E -T /B Intel SmartVoltage Technology — 5V or 12V Program/Erase

29057

Abstract: intel 4269
Contextual Info: 28F002BC 2-MBIT 256K X 8 BOOT BLOCK FLASH MEMORY • High Performance Read — 80/120 ns Max. Access Time 40 ns Max. Output Enable Time a Low Power Consumption — 20 mA Typical Read Current ■ x8-Only Input/Output Architecture — Space-Constrained 8-bit