200MI Search Results

LV5808MX

Abstract: CDRH105RNP-100NC Q117 SBM30-03 LV5808M 370khz
Contextual Info: Ordering number : ENA1607 Bi-CMOS IC LV5808MX Step-down Switching Regulator Overview LV5808MX is a 1ch step-down switching regulator. 0.3Ω FET is incorporated on the upper side to achieve high-efficiency operation for large output current. Low-heat resistance and compact-package MFP8 200mil employed. Current mode

CDRH105RNP-100NC

Abstract: LV58061MX SBM30-03
Contextual Info: 注文コード No.N A 1 6 9 2 Bi-CMOS 集積回路 LV58061MX ステップダウン スイッチングレギュレータ 概要 LV58061MXは1chステップダウン･スイッチングレギュレータである。上側に0.13Ω FETを内蔵し大 きな出力電流に対し、高効率動作を実現した。低熱抵抗で小型パッケージのMFP8 200mil を採用。

Contextual Info: LV58063MC Step-Down Switching Regulator Application Note http://onsemi.com Overview LV58063MC is a 1ch step-down switching regulator. 0.13 FET is incorporated on the upper side to achieve high-efficiency operation for large output current. Low-heat resistance and compact-package SOP8L 200mil employed.

Hitachi DSA002788

Contextual Info: HVR100 Variable Capacitance Diode for AM tuner ADE-208-079E Z Rev.5 Features • • • • High capacitance ratio. (n = 16.0min) High figure of merit. (Q = 200min) To be usable at low voltagee. Small Resin Package (SRP) is suitable for surface mount design.

340KHz

Abstract: C66A
Contextual Info: 注文コード No.N A 1 8 4 3 Bi-CMOS 集積回路 ステップダウン スイッチングレギュレータ LV5857MX 概要 LV5857MXは1chステップダウン･スイッチングレギュレータである。上側/下側に0.13Ω FETを内蔵し 大きな出力電流に対し、高効率動作を実現した。低熱抵抗で小型パッケージのMFP8 200mil を採用。

LV5809

Abstract: A1475 Q117 200MIL ic 4518
Contextual Info: 注文コード No.N A 1 4 7 5 Bi-CMOS 集積回路 ステップダウン スイッチングレギュレータ LV5809MX 概要 LV5809MXは1chステップダウン･スイッチングレギュレータである。上側に0.2Ω FETを内蔵し大き な出力電流に対し、高効率動作を実現した。低熱抵抗で小型パッケージのMFP8 200mil を採用。電

Contextual Info: Ordering number : ENA1639 Bi-CMOS IC LV5856MX Step-down Switching Regulator Overview LV5856MX is a 1ch step-down switching regulator. With built-in two 0.13Ω power MOSFET switch, it achieves high output current and high efficiency. With low-heat resistance, miniature package MFP8 200mil with heat-sink is adopted.

Contextual Info: Ordering number : ENA1607 Bi-CMOS IC LV5808MX Step-down Switching Regulator Overview LV5808MX is a 1ch step-down switching regulator. 0.3Ω FET is incorporated on the upper side to achieve high-efficiency operation for large output current. Low-heat resistance and compact-package MFP8 200mil employed. Current mode

2SD2558

Contextual Info: Equivalent circuit 2SD2558 Silicon NPN Triple Diffused Planar Transistor ICBO VCB=200V 100max µA VCEO 200 V IEBO VEB=6V 5max mA VEBO 6 V V BR CEO IC 5 A hFE IC=10mA 200min VCE=5V, IC=1A 1500 to 6500 Unit VCE(sat) IC=1A, IB=5mA 1.5max V W fT VCE=10V, IE=–0.5A

CDRH105RNP-100NC

Abstract: Q117 SBM30-03
Contextual Info: Ordering number : ENA1495A Bi-CMOS IC LV5807MX Step-down Switching Regulator Overview LV5807MX is a 1ch step-down switching regulator. 0.12Ω FET is incorporated on the upper side to achieve high-efficiency operation for large output current. Low-heat resistance and compact-package MFP8 200mil employed.

JP2 connector

Abstract: 001-page DIL10 EVB90121 ISO15693 MLX90121 SSO20 VK200 XC6201 XC62FP
Contextual Info: EVB90121 MLX90121 Evaluation Board Features and Benefits Output power up to 200miliwatts Complies with standard ISO15693 and ISO 14443 protocols Programmable encoder for custom protocol Short to medium reading range applications Matching network optimized for 50 ohm antenna impedance

Contextual Info: Ordering number : ENA1495 Bi-CMOS IC LV5807MX Step-down Switching Regulator Overview LV5807MX is a 1ch step-down switching regulator. 0.12Ω FET is incorporated on the upper side to achieve high-efficiency operation for large output current. Low-heat resistance and compact-package MFP8 200mil employed.

Contextual Info: DCファンモータ□３０x１０t（ASFN３） 200min •寸法図（単位mm） φ 3.2 10±0.2 0.2 24±0.2 30±0.3 ± 風向 24±0.2 ■定格 30±0.3 １． スタンダードスピード 定格電流 定格入力 （W）max．/AVE （mA）max．/AVE

Contextual Info: Ordering number : ENA1607 Bi-CMOS IC LV5808MX Step-down Switching Regulator Overview LV5808MX is a 1ch step-down switching regulator. 0.3Ω FET is incorporated on the upper side to achieve high-efficiency operation for large output current. Low-heat resistance and compact-package MFP8 200mil employed. Current mode

2SD2558

Abstract: 2sd25
Contextual Info: Equivalent circuit 2SD2558 Silicon NPN Triple Diffused Planar Transistor ICBO VCB=200V 100max µA VCEO 200 V IEBO VEB=6V 5max mA VEBO 6 V V BR CEO IC 5 A hFE IC=10mA 200min VCE=5V, IC=1A 1500 to 6500 Unit VCE(sat) IC=1A, IB=5mA 1.5max V W fT VCE=10V, IE=–0.5A

2SD2557

Contextual Info: Equivalent circuit 2SD2557 Silicon NPN Triple Diffused Planar Transistor Unit VCB=200V 100max µA VCEO 200 V IEBO VEB=6V 5max mA VEBO 6 V V BR CEO IC 5 A hFE IC=10mA 200min VCE=5V, IC=1A 1500 to 6500 V a 4.8±0.2 2.0±0.1 ø3.2±0.1 b IB 2 A VCE(sat) IC=1A, IB=5mA

DXT170-75-1

Abstract: DXT170-71-1 AXT661-1 AXT661-14A VQ110-5L-Q DXT170 AXT661-13ADC JISB8374-1993 VQ100 SOl-23
Contextual Info: 3 Port Solenoid Valve Series VQ100 Unprecedented high speed, stable response, and extra-long service life. ON: 3.5ms, OFF: 2ms, Dispension accuracy ±1ms With indicator light and surge voltage suppressor; supply pressure 0.5MPa 200million cycles or more (clean and dry air)

2SC4382

Abstract: 2SC4381 FM20 2SC4382 transistor DSA0016509
Contextual Info: 2SC4381/4382 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SA1667/1668 V ICBO VCB= VEBO 6 V IEBO IC 2 A V(BR)CEO 150 VEB=6V 200 V µA 10max IC=25mA 150min 200min 1 A hFE VCE=10V, IC=0.7A 60min PC 25(Tc=25°C) W VCE(sat) IC=0.7A, IB=0.07A

2SC3858

Abstract: 2SA1494 2sc3858 transistor transistor 2sc3858 DSA0016508
Contextual Info: 2SC3858 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SA1494 Symbol Conditions Ratings Unit VCB=200V 100max µA VEB=6V 100max µA IC=50mA 200min V Ratings Unit VCBO 200 V ICBO VCEO 200 V IEBO VEBO 6 V V(BR)CEO IC 17 A hFE VCE=4V, IC=8A

Contextual Info: Capacitors Ceramic Trimmer Capacitors o TZR1 Series 1.7 0.9 max. 1.5 Depth;0.15 0.45 0.2 0.35 (Tolerancein: ±0.1 mm) Cmin. (pF) Cmax. (pF) TC Q Rated Voltage Withstanding Voltage TZR1Z010A001 0.55 max. 1.0 +100/-0% NP0±300ppm/°C 200min. at 200MHz, Cmax.

Q117

Contextual Info: Ordering number : ENA1475 Bi-CMOS IC LV5809MX Step-down Switching Regulator Overview LV5809MX is a 1ch step-down switching regulator. 0.2Ω FET is incorporated on the upper side to achieve high-efficiency operation for large output current. Low-heat resistance and compact-package MFP8 200mil employed. Current mode

CDRH105RNP-330NC

Abstract: Q117 SBM30-03
Contextual Info: 注文コード No.N A 1 8 6 3 Bi-CMOS 集積回路 LV58082MX ステップダウン スイッチングレギュレータ 概要 LV58082MXは1chステップダウン･スイッチングレギュレータである。上側に0.3Ω FETを内蔵し大 きな出力電流に対し、高効率動作を実現した。低熱抵抗で小型パッケージのMFP8 200mil を採用。

Q117

Abstract: LV5808M 5V 2A SW regulator 5800pF CDRH105RNP-100NC LV5808MX SBM30-03 Q-117 16v80
Contextual Info: 注文コード No.N A 1 6 0 7 Bi-CMOS 集積回路 ステップダウン スイッチングレギュレータ LV5808MX 概要 LV5808MXは1chステップダウン･スイッチングレギュレータである。上側に0.3Ω FETを内蔵し大き な出力電流に対し、高効率動作を実現した。低熱抵抗で小型パッケージのMFP8 200mil を採用。電

2SD2016

Abstract: FM20
Contextual Info: 2SD2016 Silicon NPN Triple Diffused Planar Transistor VCEO 200 V IEBO VEBO 6 V V BR CEO IC 3 A hFE Symbol Conditions VCB=200V 10max µA 10max mA VEB=6V V 200min IC=10mA 1000 to 15000 VCE=4V, IC=1A 0.5 A VCE(sat) IC=1A, IB=1.5mA 1.5max PC 25(Tc=25°C) W VBE(sat)