60MIN Search Results

lf817

Abstract: pnp 8 transistor array pnp array SLA8004 1/stv 9902
Contextual Info: Power Transistor Array SLA8004 Tj Tstg ICBO IEBO VCEO hFE VCE sat VFEC Ratings VCB = 60V 100max VEB = 6V 60max IC = 25mA 60min VCE = 1V, IC = 3A 150min IC = 6A, IB = 0.3A 0.35max IFEC = 10A 2.5max Test Conditions Ratings VCB = –55V –100max VEB = –6V

HVM25

Abstract: 088B Hitachi DSA001652
Contextual Info: HVM25 Variable Capacitance Diode for FM tuner ADE-208-088B Z Preliminary Rev. 2 May. 1993 Features • • • • Good linearity of C-V curve. To be usable at low voltage. High figure of merit. (Q = 60min) MPAK package is suitable for high density surface mounting and high speed assembly.

2SC4065

Abstract: TRANSISTOR SE 135
Contextual Info: Power Transistor 2SC4065 ICBO IEBO V BR CEO hFE VCE (sat) VFEC fT COB (Ta=25ºC) Unit µA mA V Ratings 100max 60max 60min 50min 0.35max 2.5max 24typ 180typ External Dimensions FM20 (full-mold) 10.0 V V MHz pF a b RL (Ω) 4 IC (A) 6 VBB1 (V) 10 VBB2 (V) –5

Contextual Info: Power Transistor 2SC3851 Electrical Characteristics External Dimensions FM20 full-mold 10.0 4.2 2.8 3.3 C0.5 16.9 V MHz pF a b 2.6 3.9 ICBO IEBO V(BR) CEO hFE VCE (sat) fT COB (Ta=25ºC) Unit µA µA V Ratings 100max 100max 60min 40 to 320 0.5max 15typ 60typ

2SA1668

Abstract: 2SA1667 equivalent for 2sa1668 FM20
Contextual Info: 2SA1667/1668 Silicon PNP Epitaxial Planar Transistor Complement to type 2SC4381/4382 VCB= VEBO –6 V IEBO IC –2 A V(BR)CEO –10max –10max µA –150 –200 V µA –10max VEB=–6V –150min IC=–25mA –200min –1 A hFE VCE=–10V, IC=–0.7A 60min

Contextual Info: 2SC3179 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SA1262 100max µA V IEBO VEB=6V 100max µA 6 V V(BR)CEO V 4 A hFE IC=25mA 60min VCE=4V, IC=1V 40min V IB 1 A VCE(sat) IC=2A, IB=0.2A 0.6max PC 30(Tc=25°C) W fT VCE=12V, IE=–0.2A

VDE0106

Contextual Info: Electronic Timers Asymmetrical Recycler XT DESCRIPTION OPERATION Asymmetrical recycler with 2 functions and 4 time ranges. The function is selected by mounting a jumper and the time range is selectable via the front mounted rotary switch. The pulse and pause time ranges cover 0.6sec.-60min. or 0.6min.60hrs. Pulse and pause time are individually adjustable on the timer

2SC3852A

Abstract: 2sc3852 FM20 transistor 2sc3852
Contextual Info: 2SC3852/3852A High hFE LOW VCE sat Silicon NPN Epitaxial Planar Transistor ICBO 80 VCB= IC 3 A V(BR)CEO VEB=6V 100 V µA 100max 60min IC=25mA 80min V 1 A hFE VCE=4V, IC=0.5A 500min PC 25(Tc=25°C) W VCE(sat) IC=2A, IB=50mA 0.5max V Tj 150 °C fT VCE=12V, IE=–0.2A

Contextual Info: Spec Sheet INDUCTORS Radial Leaded Inductors LHL08TB183J Features Item Summary 18000 H ±5% , 0.048A, 60min, Leaded Lifecycle Stage Mass Production Standard packaging quantity (minimum) Taping 1000pcs Products characteristics table External Dimensions 9.5(max)x9(max)

Contextual Info: Spec Sheet INDUCTORS Radial Leaded Inductors LHL10TB270K Features Item Summary 27 H ±10% , 2A, 60min, Leaded Lifecycle Stage Mass Production Standard packaging quantity (minimum) Taping 500pcs Products characteristics table External Dimensions 14(max)x11(max)

Contextual Info: Spec Sheet INDUCTORS Radial Leaded Inductors LHL08TB273J Features Item Summary 27000 H ±5% , 0.042A, 60min, Leaded Lifecycle Stage Mass Production Standard packaging quantity (minimum) Taping 1000pcs Products characteristics table External Dimensions 9.5(max)x9(max)

transistor 2sc3852

Contextual Info: Power Transistor 2SC3852 Ta=25ºC Unit µA µA V Ratings 10max 100max 60min 500min 0.5max 15typ 50typ External Dimensions TO220F (full-mold) 10.0 4.2 2.8 3.3 C0.5 16.9 V MHz pF a b 2.6 1.35 1.35 0.85 Typical Switching Characteristics (common emitter) VCC

2SC3852

Contextual Info: Power Transistor 2SC3852 Ta=25ºC Unit µA µA V Ratings 10max 100max 60min 500min 0.5max 15typ 50typ External Dimensions FM20 (full-mold) 10.0 4.2 2.8 3.3 C0.5 16.9 V MHz pF a b 2.6 1.35 1.35 0.85 Typical Switching Characteristics (common emitter) VCC (V)

Contextual Info: Power Transistor Array SLA8004 PT Tj Tstg V V V A A W W ºC ºC ICBO IEBO VCEO hFE VCE sat VFEC Test Conditions Ratings Test Conditions VCB = 60V 100max VEB = 6V 60max IC = 25mA 60min VCE = 1V, IC = 3A 150min IC = 6A, IB = 0.3A 0.35max IFEC = 10A 2.5max

2SC3851

Abstract: 2SC3851A FM20
Contextual Info: 2SC3851/3851A Silicon NPN Epitaxial Planar Transistor Complement to type 2SA1488/A A V(BR)CEO IB 1 A hFE VCE=4V, IC=1A 60min 80min 40 to320 PC 25(Tc=25°C) W VCE(sat) IC=2A, IB=0.2A 0.5max V Tj 150 °C fT VCE=12V, IE=–0.2A 15typ MHz –55 to +150 °C COB

Contextual Info: Spec Sheet INDUCTORS Radial Leaded Inductors LHL16TB151K Features Item Summary 150 H ±10% , 2.4A, 60min, Leaded Lifecycle Stage Non-preferred Standard packaging quantity (minimum) Taping 250pcs Products characteristics table External Dimensions 21(max)x17(max)

Contextual Info: Spec Sheet INDUCTORS Radial Leaded Inductors LHL10TB330K Features Item Summary 33 H ±10% , 1.9A, 60min, Leaded Lifecycle Stage Mass Production Standard packaging quantity (minimum) Taping 500pcs Products characteristics table External Dimensions 14(max)x11(max)

Contextual Info: Spec Sheet INDUCTORS Radial Leaded Inductors LHL08TB333J Features Item Summary 33000 H ±5% , 0.04A, 60min, Leaded Lifecycle Stage Mass Production Standard packaging quantity (minimum) Taping 1000pcs Products characteristics table External Dimensions 9.5(max)x9(max)

2SC4382

Abstract: 2SC4381 FM20 2SC4382 transistor DSA0016509
Contextual Info: 2SC4381/4382 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SA1667/1668 V ICBO VCB= VEBO 6 V IEBO IC 2 A V(BR)CEO 150 VEB=6V 200 V µA 10max IC=25mA 150min 200min 1 A hFE VCE=10V, IC=0.7A 60min PC 25(Tc=25°C) W VCE(sat) IC=0.7A, IB=0.07A

2SC3179

Abstract: 2SA1262
Contextual Info: 2SC3179 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SA1262 ICBO VCEO 60 V IEBO VEBO 6 V V(BR)CEO IC 4 A hFE Symbol Conditions 2SC3179 Unit VCB=80V 100max µA VEB=6V 100max µA IC=25mA 60min V VCE=4V, IC=1V 40min IB 1 A VCE(sat) IC=2A, IB=0.2A

BFR80

Abstract: BFR79 BFR81 BFT69 BFW32 700M BFQ37 BFQ38S BFR38 BFR52
Contextual Info: SEHELAB LTD 37E D • 6133157 DQQ0D5Q b « S U L B ~T~ 3 3 -Of , I •i Type No. Option''17 Polarlly Packa9 e v CEO hF E @ VC e / ' c fT PD PNP PNP PNP NPN PNP T039 T039 T072 T092 T092 300 250 35 20 80 0.2 1 20m 1 1 30-300 25min 25min 60min 50min 5 /10m 5 /50m

Contextual Info: Oki Semiconductor Co., Ltd. 550-1 , Higashi-Asakawacho , Hachioji Cty , Tokyo , 193-8550 ,Japan TEL 042 663-1111 URL http://www.okisemi.com/en ●ACCESS JR Chuo Line : Tokyo - Takao(60min : Special Rapid, 75min : Rapid)and 10min.walk Keio LIne : Shinjuku - Takao (46min : For Takaosanguchi) and 10min.walk

Broyce Control

Abstract: isolate 240v relay spdt 250v 8a 150S20
Contextual Info: Type: M1MFM Multi Function, Multi Voltage Timer q q q q q q q 17.5mm DIN rail housing Delay On Operate, Interval, Symmetrical Recycling Off/On or On/Off Multi-voltage supply: 24 - 240V AC / DC Two time ranges available: 0.5secs - 60mins or 5secs to 10hours*

Contextual Info: Spec Sheet INDUCTORS Radial Leaded Inductors LHL10TB153J Features Item Summary 15000 H ±5% , 0.09A, 60min, Leaded Lifecycle Stage Mass Production Standard packaging quantity (minimum) Taping 500pcs Products characteristics table External Dimensions 14(max)x11(max)