Hitachi DSA002788
Abstract: No abstract text available
Text: HVR100 Variable Capacitance Diode for AM tuner ADE-208-079E Z Rev.5 Features • • • • High capacitance ratio. (n = 16.0min) High figure of merit. (Q = 200min) To be usable at low voltagee. Small Resin Package (SRP) is suitable for surface mount design.
|
Original
|
PDF
|
HVR100
ADE-208-079E
200min)
HVR100
Hitachi DSA002788
|
2SD2558
Abstract: No abstract text available
Text: Equivalent circuit 2SD2558 Silicon NPN Triple Diffused Planar Transistor ICBO VCB=200V 100max µA VCEO 200 V IEBO VEB=6V 5max mA VEBO 6 V V BR CEO IC 5 A hFE IC=10mA 200min VCE=5V, IC=1A 1500 to 6500 Unit VCE(sat) IC=1A, IB=5mA 1.5max V W fT VCE=10V, IE=–0.5A
|
Original
|
PDF
|
2SD2558
FM100
100max
200min
15typ
110typ
2SD2558
|
Untitled
Abstract: No abstract text available
Text: DCファンモータ□３０x１０t（ASFN３） 200min •寸法図（単位mm） φ 3.2 10±0.2 0.2 24±0.2 30±0.3 ± 風向 24±0.2 ■定格 30±0.3 １． スタンダードスピード 定格電流 定格入力 （W）max．/AVE （mA）max．/AVE
|
Original
|
PDF
|
200min
DC12V
|
2SD2558
Abstract: 2sd25
Text: Equivalent circuit 2SD2558 Silicon NPN Triple Diffused Planar Transistor ICBO VCB=200V 100max µA VCEO 200 V IEBO VEB=6V 5max mA VEBO 6 V V BR CEO IC 5 A hFE IC=10mA 200min VCE=5V, IC=1A 1500 to 6500 Unit VCE(sat) IC=1A, IB=5mA 1.5max V W fT VCE=10V, IE=–0.5A
|
Original
|
PDF
|
2SD2558
FM100
100max
200min
15typ
110typ
2SD2558
2sd25
|
2SD2557
Abstract: No abstract text available
Text: Equivalent circuit 2SD2557 Silicon NPN Triple Diffused Planar Transistor Unit VCB=200V 100max µA VCEO 200 V IEBO VEB=6V 5max mA VEBO 6 V V BR CEO IC 5 A hFE IC=10mA 200min VCE=5V, IC=1A 1500 to 6500 V a 4.8±0.2 2.0±0.1 ø3.2±0.1 b IB 2 A VCE(sat) IC=1A, IB=5mA
|
Original
|
PDF
|
2SD2557
MT-100
100max
200min
2SD2557
|
2SC4382
Abstract: 2SC4381 FM20 2SC4382 transistor DSA0016509
Text: 2SC4381/4382 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SA1667/1668 V ICBO VCB= VEBO 6 V IEBO IC 2 A V(BR)CEO 150 VEB=6V 200 V µA 10max IC=25mA 150min 200min 1 A hFE VCE=10V, IC=0.7A 60min PC 25(Tc=25°C) W VCE(sat) IC=0.7A, IB=0.07A
|
Original
|
PDF
|
2SC4381/4382
2SA1667/1668)
10max
150min
200min
60min
15typ
35typ
O220F)
2SC4382
2SC4381
FM20
2SC4382 transistor
DSA0016509
|
2SC3858
Abstract: 2SA1494 2sc3858 transistor transistor 2sc3858 DSA0016508
Text: 2SC3858 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SA1494 Symbol Conditions Ratings Unit VCB=200V 100max µA VEB=6V 100max µA IC=50mA 200min V Ratings Unit VCBO 200 V ICBO VCEO 200 V IEBO VEBO 6 V V(BR)CEO IC 17 A hFE VCE=4V, IC=8A
|
Original
|
PDF
|
2SC3858
2SA1494)
100max
MT-200
200min
50min
20typ
300typ
2SC3858
2SA1494
2sc3858 transistor
transistor 2sc3858
DSA0016508
|
Untitled
Abstract: No abstract text available
Text: Capacitors Ceramic Trimmer Capacitors o TZR1 Series 1.7 0.9 max. 1.5 Depth;0.15 0.45 0.2 0.35 (Tolerancein: ±0.1 mm) Cmin. (pF) Cmax. (pF) TC Q Rated Voltage Withstanding Voltage TZR1Z010A001 0.55 max. 1.0 +100/-0% NP0±300ppm/°C 200min. at 200MHz, Cmax.
|
Original
|
PDF
|
TZR1Z010A001
TZR1Z1R5A001
TZR1Z040A001
TZR1R080A001
300ppm/
500ppm/
200min.
200MHz,
|
2SD2016
Abstract: FM20
Text: 2SD2016 Silicon NPN Triple Diffused Planar Transistor VCEO 200 V IEBO VEBO 6 V V BR CEO IC 3 A hFE Symbol Conditions VCB=200V 10max µA 10max mA VEB=6V V 200min IC=10mA 1000 to 15000 VCE=4V, IC=1A 0.5 A VCE(sat) IC=1A, IB=1.5mA 1.5max PC 25(Tc=25°C) W VBE(sat)
|
Original
|
PDF
|
2SD2016
10max
200min
90typ
40typ
O220F)
150x150x2
50x50x2
2SD2016
FM20
|
transistor 2sc3858
Abstract: 2SC3858 2sc3858 transistor 2sa1494 characteristics 2SC3858 2sc3858 safe operating area
Text: 2SC3858 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SA1494 200 V ICBO VCB=200V 100max µA IEBO VEB=6V 100max µA 200min V VEBO 6 V V(BR)CEO IC 17 A hFE VCE=4V, IC=8A 50min∗ IC=10A, IB=1A 2.5max V IC=50mA 24.4±0.2 A PC 200(Tc=25°C)
|
Original
|
PDF
|
2SC3858
2SA1494)
100max
200min
MT-200
50min
20typ
transistor 2sc3858
2SC3858
2sc3858 transistor
2sa1494
characteristics 2SC3858
2sc3858 safe operating area
|
Hitachi DSA002714
Abstract: No abstract text available
Text: HVR100 Variable Capacitance Diode for AM tuner ADE-208-079E Z Rev.5 Features • • • • High capacitance ratio. (n = 16.0min) High figure of merit. (Q = 200min) To be usable at low voltagee. Small Resin Package (SRP) is suitable for surface mount design.
|
Original
|
PDF
|
HVR100
ADE-208-079E
200min)
HVR100
Hitachi DSA002714
|
ul 2725 awg
Abstract: No abstract text available
Text: DCファンモータ□４０x１０t（ASFN４） 200min •寸法図（単位mm） 4φ 3. 2.7±0.25 32±0.2 6 40±0.3 2.3±0.25 8- 5 32±0.2 10±0.5 40±0.3 ■定格 風向 １． スタンダードスピード 品番 定格電圧 （V） 定格入力
|
Original
|
PDF
|
200min
DC12V
ul 2725 awg
|
2SD2016
Abstract: FM20
Text: 2SD2016 Silicon NPN Triple Diffused Planar Transistor VCEO 200 V IEBO VEBO 6 V V BR CEO IC 3 A hFE Symbol Conditions VCB=200V 10max µA 10max mA VEB=6V V 200min IC=10mA 1000 to 15000 VCE=4V, IC=1A 0.5 A VCE(sat) IC=1A, IB=1.5mA 1.5max PC 25(Tc=25°C) W VBE(sat)
|
Original
|
PDF
|
2SD2016
10max
200min
90typ
40typ
O220F
150x150x2
50x50x2
2SD2016
FM20
|
Untitled
Abstract: No abstract text available
Text: Power Transistor 2SD2382 ICBO IEBO VCEO hFE VCE sat VFEC Es/b (Ta=25ºC) Unit µA µA V Ratings 10max 10max 60 to 70 700 to 3000 0.15max 1.5max 200min External Dimensions TO220F (full-mold) 10.0 4.2 2.8 3.3 C0.5 V V mJ 16.9 Test Conditions VCB = 60V VEB = 6V
|
Original
|
PDF
|
2SD2382
10max
15max
200min
O220F
|
|
|
2SD2557
Abstract: TEA1
Text: Equivalent circuit 2SD2557 Silicon NPN Triple Diffused Planar Transistor Unit VCB=200V 100max µA VCEO 200 V IEBO VEB=6V 5max mA VEBO 6 V V BR CEO IC 5 A hFE IC=10mA 200min VCE=5V, IC=1A 1500 to 6500 V a 4.8±0.2 2.0±0.1 ø3.2±0.1 b IB 2 A VCE(sat) IC=1A, IB=5mA
|
Original
|
PDF
|
2SD2557
MT-100
100max
200min
2SD2557
TEA1
|
ITH-1510
Abstract: No abstract text available
Text: Power Transistor 2SD2382 ICBO IEBO VCEO hFE VCE sat VFEC Es/b (Ta=25ºC) Unit µA µA V Ratings 10max 10max 60 to 70 700 to 3000 0.15max 1.5max 200min External Dimensions TO220F (full-mold) 10.0 4.2 2.8 3.3 C0.5 V V mJ 16.9 Test Conditions VCB = 60V VEB = 6V
|
Original
|
PDF
|
2SD2382
10max
15max
200min
O220F
ITH-1510
|
2SC3857
Abstract: 2SA1493 DSA0016508
Text: 2SC3857 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SA1493 •Electrical Characteristics Ratings Unit ICBO VCB=200V 100max µA V IEBO VEB=6V 100max µA IC=50mA 200min V 200 24.4±0.2 6 V V(BR)CEO IC 15 A hFE VCE=4V, IC=5A 50min∗ IB
|
Original
|
PDF
|
2SC3857
2SA1493)
MT-200
100max
200min
50min
20typ
250typ
2SC3857
2SA1493
DSA0016508
|
2SC5271
Abstract: 300V regulator FM20
Text: 2SC5271 Silicon NPN Triple Diffused Planar Transistor VCEO 200 V IEBO VEBO 7 V V BR CEO 5(Pulse10) A hFE1 IC VCB=300V 100max µA VEB=7V 100max µA IC=10mA 200min V VCE=2V, IC=2.5A 10 to 30 IB 2 A hFE2 VCE=2V, IC=1mA 15min PC 30(Tc=25°C) W VCE(sat) IC=2.5A, IB=0.5A
|
Original
|
PDF
|
2SC5271
Pulse10)
100max
200min
O220F)
15min
10typ
45typ
2SC5271
300V regulator
FM20
|
2SD2382
Abstract: FM20
Text: Power Transistor 2SD2382 ICBO IEBO VCEO hFE VCE sat VFEC Es/b (Ta=25ºC) Unit µA µA V Ratings 10max 10max 60 to 70 700 to 3000 0.15max 1.5max 200min External Dimensions FM20 (full-mold) 10.0 4.2 2.8 3.3 C0.5 8.4 Test Conditions VCB = 60V VEB = 6V IC = 50mA
|
Original
|
PDF
|
2SD2382
10max
15max
200min
2SD2382
FM20
|
e9611
Abstract: marking code ACh
Text: 3-teminal Filters For power line ACH series Type: ACH32C ACH3218 ACH4518 [1206 inch]* [1207 inch] [1807 inch] * Dimensions Code [EIA] Issue date: September 2011 • All specifications are subject to change without notice. • Conformity to RoHS Directive: This means that, in conformity with EU Directive 2002/95/EC, lead, cadmium, mercury, hexavalent chromium, and specific
|
Original
|
PDF
|
ACH32C
ACH3218
ACH4518
2002/95/EC,
ACH32C
200min.
300min.
e9611
marking code ACh
|
Untitled
Abstract: No abstract text available
Text: 1/2 Chip Beads(SMD) For Power Line Conformity to RoHS Directive MPZ Series MPZ1005 Type SHAPES AND DIMENSIONS/RECOMMENDED PC BOARD PATTERN 1±0.05 0.5 0.5±0.05 FEATURES • TDK has manufactured MPZ1005 type as EMI countermeasure product for power line.
|
Original
|
PDF
|
MPZ1005
100MHz]
ree10000
MPZ1005S600C
MPZ1005S121C
300min.
160min.
200min.
60min.
|
MLP2520V-S
Abstract: MLP2520S100M MLP1608V2R2B MLP1608 MLP2012V MLP1608V1R0B MLP2016S4R7MT MLP2012V1R0MT MLP2016 MLP2016SR47M
Text: Inductors for Power Circuits Multilayer/STD • magnetic shielded MLP series Type: MLP1608 MLP2012 MLP2016 MLP2520 1608[0603 inch]* 2012[0805 inch] 2016[0806 inch] 2520[1008 inch] * Dimensions Code JIS[EIA] Issue date: February 2012 • All specifications are subject to change without notice.
|
Original
|
PDF
|
MLP1608
MLP2012
MLP2016
MLP2520
2002/95/EC,
MLP1608
MLP2520V-S
MLP2520H-M
160min.
200min.
MLP2520S100M
MLP1608V2R2B
MLP2012V
MLP1608V1R0B
MLP2016S4R7MT
MLP2012V1R0MT
MLP2016SR47M
|
Untitled
Abstract: No abstract text available
Text: H V R 100 Variable Capacitance Diode for AM tuner HITACHI ADE-208-079E Z R e v .5 Features • High capacitance ratio, (n = 16.0min) • High figure of merit. (Q = 200min) • To be usable at low voltagee. • Small Resin Package (SRP) is suitable for surface mount design.
|
OCR Scan
|
PDF
|
ADE-208-079E
200min)
HVR100
200pF,
100nA
HVR100
|
Untitled
Abstract: No abstract text available
Text: - SELECTOR GUIDE DISCRETE BI-POLAR DEVICES Description CECC Polarity Package lc_cont Hfe_at V ce jc PNP NPN NPN NPN NPN NPN NPN NPN NPNP NPN T03 T03 T066 T039 T039 T039 T092 T092 T039 T 03 15 15 10 7 3 10 5 5 20-100 200min 20-100 20-100 20-100 20-100 50min
|
OCR Scan
|
PDF
|
200min
50min
400-2k
15min
1000min
12/10m
T0220
700min
|
