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    300nF CAPACITOR

    Abstract: 150nf LC PI FILTER DESIGN 680nf 200nf capacitor Pi filter emi filter Varistor for 3KV 300nF SFJE
    Text: EMI Filters – Quick Reference Guide SURFACE MOUNT SOLDER-IN THREADED FILTER RANGE DESCRIPTION CIRCUIT CAPACITANCE RANGE E01 EMI CHIP 3 TERMINAL CHIP, SIZES 0805,1206 & 1806 C 22pF - 200nF E07 EMI CHIP HIGH CURRENT EMI CHIP, SIZES 0805, 1206 & 1806 C 1nF - 200nF


    Original     		PDF 200nF 150nF 220nF 10Amp 20Amp 470nF 100nF 300nF CAPACITOR 150nf LC PI FILTER DESIGN 680nf 200nf capacitor Pi filter emi filter Varistor for 3KV 300nF SFJE

    y5p 3kv

    Abstract: 330pF Y5F capacitor 270pF, 4KV 4.7nf 4kv y5u 2kv capacitors N1500 ceramic capacitor 100nF 50 y5v 3kv 47NF 500V 2.2nf 4kv
    Text: Disc Ceramic Capacitors Selection Guide General Purpose Professional Application Voltage Capacitance dc CR (min.~ max.) Tolerance R isol Min. 25V 4.7nF 4.7nF 100nF 200nF ±20% / -20 + 50% -20 + 80% 1. 12 M Ω III 50V 4.7nF 4.7nF 100nF 100nF ±20% / -20 + 50%


    Original     		PDF 100nF 200nF 180pF 270pF 330pF 390pF 470pF y5p 3kv 330pF Y5F capacitor 270pF, 4KV 4.7nf 4kv y5u 2kv capacitors N1500 ceramic capacitor 100nF 50 y5v 3kv 47NF 500V 2.2nf 4kv

    5d 3kv

    Abstract: CAPACITOR 5D 3KV 271 Ceramic Disc Capacitors CAPACITOR 5D "3KV" ceramic capacitor 1kV 6.8 nF capacitor 270pF, 4KV ceramic disc 68PF 50V 6LS AVX 821 ceramic capacitor capacitor 100nf 100v polyester
    Text: A KYOCERA GROUP COMPANY TPC Disc Ceramic Capacitors Disc Ceramic Capacitors Selection Guide General Purpose Professional Application Voltage Capacitance dc CR (min.~ max.) Tolerance R isol Min. 25V 4.7nF 4.7nF 100nF 200nF ±20% / -20 + 50% -20 + 80% 1. 12 M Ω


    Original     		PDF 100nF 200nF 180pF 270pF 330pF 390pF 470pF 5d 3kv CAPACITOR 5D 3KV 271 Ceramic Disc Capacitors CAPACITOR 5D "3KV" ceramic capacitor 1kV 6.8 nF capacitor 270pF, 4KV ceramic disc 68PF 50V 6LS AVX 821 ceramic capacitor capacitor 100nf 100v polyester

    Untitled

    Abstract: No abstract text available
    Text: Surface3 Terminal MountEMIEMI Filters Chips E01 These 3 terminal chips are ideally suited for EMI suppression in digital circuits and other signal lines, and are available in 0805, 1206 and 1806 size. While the signal or dc current passes directly through the EMI


    Original     		PDF 200nF. 330mm 000pF.

    WE772

    Abstract: AEC-Q200 BEADS FILTER SFCDP AEC-Q200 EMI FILTER 0.44 uF 250Vac AC capacitor SBSGP SFABL AN0018 MIL-STD-1560A 560nF-1
    Text: Surface mount EMI filters Panel mount EMI filters Hermetic panel mount EMI filters EMI Power filters Special filters and assemblies Planar arrays Discoidal multilayer capacitors Varistor filters X2Y - Integrated Passive devices Filters for High-Rel applications


    Original     		PDF

    sbsgp

    Abstract: ceramic disc 104 aec capacitors MIL-C-83513 Tubular Pi type capacitor military passive component SFssc AEC-Q200 BEADS FILTER semiconductor metal oxide varistor EN132400 varistor far 10k 150 AN0018
    Text: Surface mount EMI filters Panel mount EMI filters Hermetic panel mount EMI filters EMI Power filters Special filters and assemblies Planar arrays Discoidal multilayer capacitors Varistor filters X2Y - Integrated Passive devices Filters for High-Rel applications


    Original     		PDF

    200nf 50V

    Abstract: IC 1806 C 10NF 50V 100GOhms syfer 0805
    Text: Surface3 Terminal MountEMIEMI Filters Chips E07 The high current 3 terminal chips are an extension to the Syfer 3 terminal EMI chip range, and are capable of carrying currents up to 2A. Suitable for use on DC lines on pcbs, they can prevent the radiation of interference emanating from high speed signal lines and


    Original     		PDF 7nF/50V 8nF/50V 10nF/50V 15nF/50V 22nF/50V 33nF/50V 47nF/50V 68nF/50V 200nf 50V IC 1806 C 10NF 50V 100GOhms syfer 0805

    200NF

    Abstract: IC 1806 syfer e01 DB0805
    Text: SurfaceHigh Mount EMI Filters Current 3 Terminal EMI Chips E07 The high current 3 terminal chips are an extension to the Syfer 3 terminal EMI chip range, and are capable of carrying currents up to 2A. Suitable for use on DC lines on pcbs, they can prevent the


    Original     		PDF 178mm 330mm 000pF. FILTSME07 200NF IC 1806 syfer e01 DB0805

    Untitled

    Abstract: No abstract text available
    Text: MULTILAYER C E R A M I C C A P A C I T O R S HIGH CURRENT EMI C H I P C A P A C I T O R S Syfer Technology has now introduced a high current version of its 3 terminal EMI chip. Capable of carrying up to 2 amps, it is particularly suitable for use on DC lines on PCBs. It can prevent the radiation of interference


    Original     		PDF 50mOhms

    1806

    Abstract: No abstract text available
    Text: Surface3 Terminal MountEMIEMI Filters Chips E01 These 3 terminal chips are ideally suited for EMI suppression in digital circuits and other signal lines, and are available in 0805, 1206 and 1806 size. While the signal or dc current passes directly through the EMI


    Original     		PDF 200nF. 3F/50V 100pF 220pF 470pF 100nF/50V 200nF/50V 1806

    C 10NF 50V

    Abstract: 200nf 50V 22pf equivalent
    Text: Surface3 Terminal MountEMIEMI Filters Chips E01 These 3 terminal chips are ideally suited for EMI suppression in digital circuits and other signal lines, and are available in 0805, 1206 and 1806 size. While the signal or dc current passes directly through the EMI


    Original     		PDF 200nF. 0820pF/50V 100pF 150pF 220pF 330pF 470pF 680pF 22nF/50V 33nF/50V C 10NF 50V 200nf 50V 22pf equivalent

    emi 0223

    Abstract: 200nf 50V 200nf capacitor syfer 1206
    Text: M U LT I L AY E R C E R A M I C C A P A C I T O R S HIGH CURRENT EMI C H I P C A P A C I T O R S Syfer Technology has now introduced a high current version of its 3 terminal EMI chip. Capable of carrying up to 2 amps, it is particularly suitable for use on DC lines on PCBs. It can prevent the radiation of interference


    Original     		PDF 50mOhms emi 0223 200nf 50V 200nf capacitor syfer 1206

    SSS4N80AS

    Abstract: BVDSS
    Text: SSS4N80AS Advanced Power MOSFET FEATURES BVDSS = 800 V Avalanche Rugged Technology RDS on = 3.0 Ω Rugged Gate Oxide Technology Lower Input Capacitance ID = 2.8 A Improved Gate Charge Extended Safe Operating Area TO-220F Lower Leakage Current : 25 µA (Max.) @ VDS = 800V


    Original     		PDF SSS4N80AS O-220F SSS4N80AS BVDSS

    CAPACITOR 5D 3KV

    Abstract: 5d 3kv CAPACITOR 5D "3KV" 5j 3kv capacitor 5j 3kv capacitor 330PF Y5F ceramic disc capacitor 100nf 104 47nf 4000V X5R CAPACITOR 6D "3KV" CAPACITOR 5D
    Text: Disc Ceramic Capacitors Class I, II and III AVX Ceramic Disc Capacitors are available for many different applications. Class 1 – Temperature Compensating, Class SL – Low Dissipation, Class II – General Purpose 100V to 5kV , Class III – Semi Conduction (Hi Capacitance), Safety Capacitors (X & Y


    Original     		PDF 100pF 220pF 1000pF CAPACITOR 5D 3KV 5d 3kv CAPACITOR 5D "3KV" 5j 3kv capacitor 5j 3kv capacitor 330PF Y5F ceramic disc capacitor 100nf 104 47nf 4000V X5R CAPACITOR 6D "3KV" CAPACITOR 5D

    SSS4N80AS

    Abstract: No abstract text available
    Text: SSS4N80AS Advanced Power MOSFET FEATURES BVDSS = 800 V Avalanche Rugged Technology RDS on = 3.0 Ω Rugged Gate Oxide Technology Lower Input Capacitance ID = 2.8 A Improved Gate Charge Extended Safe Operating Area TO-220F Lower Leakage Current : 25 µA (Max.) @ VDS = 800V


    Original     		PDF SSS4N80AS O-220F SSS4N80AS

    SSH10N60A

    Abstract: No abstract text available
    Text: SSH10N60A Advanced Power MOSFET FEATURES BVDSS = 600 V Avalanche Rugged Technology RDS on = 0.8 Ω Rugged Gate Oxide Technology Lower Input Capacitance ID = 10 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 µA (Max.) @ VDS = 600V


    Original     		PDF SSH10N60A SSH10N60A

    CMD4D11-470

    Abstract: C3469 micromirror LBC2518470K LBC2518T470M LT1611 LT1616 LT3469 LT3469ETS8 LT346
    Text: Final Electrical Specifications LT3469 Piezo Microactuator Driver with Boost Regulator May 2003 U FEATURES DESCRIPTIO Amplifier • Current Limit: ±40mA Typical ■ Input Common Mode Range: 0V to 10V ■ Output Voltage Range: 1V to V CC – 1V ■ Differential Gain Stage with High Impedance Output


    Original     		PDF LT3469 300nF. LT1940 TSSOP-16E LTC3411 LT3464 3469i CMD4D11-470 C3469 micromirror LBC2518470K LBC2518T470M LT1611 LT1616 LT3469 LT3469ETS8 LT346

    Untitled

    Abstract: No abstract text available
    Text: QFET N-CHANNEL FQA27N25 FEATURES BVDSS = 250V • Advanced New Design • Avanced Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 60nC Typ. • Extended Safe Operating Area


    Original     		PDF FQA27N25

    Untitled

    Abstract: No abstract text available
    Text: Filter Type Feedthrough EMI Filter Datasheet SFDPP M8 x 0.75 – 6g Thread : 10.00mm Hexagonal Head Circuit Configuration Electrical Details Electrical Configuration Capacitance Measurement Current Rating Insulation Resistance (IR) Temperature Rating Ferrite Inductance (Typical)


    Original     		PDF 1000hr -55oC 125oC 25lbf 9400nF 940000pF P108893)

    AS3A

    Abstract: SSS5N80A
    Text: SSS5N80A Advanced Power MOSFET FEATURES BVDSS = 800 V Avalanche Rugged Technology RDS on = 2.2 Ω Rugged Gate Oxide Technology Lower Input Capacitance ID = 3 A Improved Gate Charge Extended Safe Operating Area TO-220F Lower Leakage Current : 25 µA (Max.) @ VDS = 800V


    Original     		PDF SSS5N80A O-220F AS3A SSS5N80A

    emi ferrite pi filter

    Abstract: 3 pin Ferrite Filter 200nf 200v PI FILTER SFDPP0500944MX
    Text: Filter Type Feedthrough EMI Filter Datasheet SFDPP M8 x 0.75 – 6g Thread : 10.00mm Hexagonal Head Circuit Configuration Electrical Details Electrical Configuration Capacitance Measurement Current Rating Insulation Resistance (IR) Temperature Rating Ferrite Inductance (Typical)


    Original     		PDF 1000hr 1000F -55oC 125oC 25lbf 9400nF 940000pF P104775) emi ferrite pi filter 3 pin Ferrite Filter 200nf 200v PI FILTER SFDPP0500944MX

    SVD7N60F

    Abstract: SVD7N60 SVD7n BVDSS VDS 30v ID70A svd7n60t 10vtD 7A SF TO-220-3L VDMOS
    Text: SVD7N60T/SVD7N60F 7A 600V N 2 SVD7N60T/F N MOS TM S-Rin VDMOS 1 3 1. AC-DC H 2. 3. DC-DC PMW 1 ∗ 7A 600V RDS on ( 1 2 3 23 TO-220F-3L )=0.96Ω@VGS=10V TO-220-3L ∗ ∗ ∗ ∗ dv/dt SVD7N60T TO-220-3L SVD7N60T 50 / SVD7N60F TO-220F-3L SVD7N60F 50 / ( TC=25°C)


    Original     		PDF SVD7N60T/SVD7N60F SVD7N60T/F O-220F-3L O-220-3L SVD7N60T SVD7N60F SVD7N60F SVD7N60 SVD7n BVDSS VDS 30v ID70A svd7n60t 10vtD 7A SF TO-220-3L VDMOS

    Piezo speaker crossover

    Abstract: LTC1772B
    Text: LT3469 Piezo Microactuator Driver with Boost Regulator FEATURES DESCRIPTIO Amplifier • Current Limit: ±40mA Typical ■ Input Common Mode Range: 0V to 10V ■ Output Voltage Range: 1V to V CC – 1V ■ Differential Gain Stage with High Impedance Output


    Original     		PDF LT3469 300nF. TSSOP-16E 3469f Piezo speaker crossover LTC1772B

    Untitled

    Abstract: No abstract text available
    Text: Su k 3 Terminal EMI Chips E01 These 3 terminal chips are ideally suited for EMI suppression in digital circuits and other signal lines, and are available in 0805,1206 and 1806 size. W hile the signal or dc current passes directly through the EMI chip, unwanted noise is suppressed by the grounding of the high


    OCR Scan     		PDF 200nF.