300NF Search Results

S69B

Abstract: smd fuse 050f LM5068-1 SMD R0805 R2512 resistor SMD R1206 marking S67B
Contextual Info: LM5068 LM5068 Negative Voltage Hot Swap Controller Literature Number: SNVS254B LM5068 Negative Voltage Hot Swap Controller General Description Features The LM5068 hot-swap controller provides intelligent control of power supply connections during the insertion and removal of circuit cards powered by live system backplanes.

SFD60N03L

Contextual Info: SFD60N03L Electrical Characteristics Symbol TC = 25 °C unless otherwise noted Parameter Test Conditions Min Typ Max Units 30 - - V - 0.02 - V/°C VDS = 30V, VGS = 0V - - 1 uA VDS = 24V, TC = 125 °C - - 10 uA Gate-Source Leakage, Forward VGS = 20V, VDS = 0V

7N50

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 7N50 Preliminary Power MOSFET 7A, 500V N-CHANNEL POWER MOSFET 1 „ The UTC 7N50 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 24N50 Power MOSFET 24A, 500V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 24N50 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state

PANASONIC Aluminum Electrolytic FA

Abstract: 14x44 25X64 22X54
Contextual Info: Aluminum Electrolytic Capacitors Large Can Type For Photo Flash For Photo Flash Features • ■ ■ ■ Compact size Stable & low leakage current Low loss factor & excellent charge/discharge characteristics Lead wire type FP-Series Specifications AS type

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UF9640 Preliminary Power MOSFET 11 Amps, 200 Volts P-CHANNEL POWER MOSFET  DESCRIPTION The UF9640 is a P-channel Power MOSFET that developed by UTC’s advanced technlogy. The device hasan advantage of include fast switching, low on-resistance, ruggedized device design and low

480b

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2N80 Preliminary Power MOSFET 2A, 800V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 2N80 is an N-channel mode power MOSFET using UTC’s advanced technology to provide costumers planar stripe and DMOS technology. This technology is specialized in allowing a

11n90

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 11N90 Preliminary 11 Amps, 900 Volts N-CHANNEL POWER MOSFET Power MOSFET 1 TO-220 „ DESCRIPTION The UTC 11N90 is an N-channel enhancement mode Power FET using UTC’s advanced technology to provide costomers with planar stripe and DMOS technology. This technology specializes in

15N65

Abstract: DSA008952 N-channel MOSFET to-247
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 15N65 Preliminary Power MOSFET 15 Amps, 650 Volts N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 15N65 is an N-channel mode power MOSFET using UTC’s advanced technology to provide costumers with planar stripe and DMOS technology. This technology is specialized in allowing a

MJ192

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 22N20 Preliminary Power MOSFET 22A, 200V N-CHANNEL POWER MOSFET „ 1 DESCRIPTION The UTC 22N20 is an N-channel enhancement mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology is

9N50

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 9N50 Preliminary Power MOSFET 9 Amps, 500 Volts N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 9N50 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers planar stripe and DMOS technology. This technology allows a minimum on-state

Contextual Info: Filter Type Feedthrough EMI Filter Datasheet SFBD 12-32 UNEF Tread : 4.75mm Hexagonal Head Circuit Configurations Available Electrical Details Electrical Configuration Capacitance Measurement Current Rating Insulation Resistance (IR) Temperature Rating Ferrite Inductance (Typical)

8n80

Abstract: MOSFET 8N80 ua 471 TO-220-F1 8N80L-TA3-T 8N80G-TA3-T
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 8N80 Power MOSFET 8A, 800V N-CHANNEL POWER MOSFET 1 „ DESCRIPTION The UTC 8N80 is an N-channel mode power MOSFET, it uses UTC’s advanced technology to provide costumers planar stripe and DMOS technology. This technology allows a minimum on-state

24N50

Abstract: mosfet 24n50 24N50L-T47-T
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 24N50 Power MOSFET 24A, 500V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 24N50 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state

7n80

Abstract: 7N80 TO220 7N80L-TF3-T 66a 523
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 7N80 Preliminary Power MOSFET 7A, 800V N-CHANNEL POWER MOSFET „ DESCRIPTION 1 The UTC 7N80 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology specializes in allowing a

10n50

Abstract: TO-220F1 DIODE 531 mosfet 10a 500v 10N50G
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 10N50 Preliminary Power MOSFET 10A, 500V N-CHANNEL POWER MOSFET 1 „ The UTC 10N50 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state

OPAmp Labs

Abstract: riaa eq I60n octal tube socket pink noise generator "Microphone Preamplifier" 24v up Audio amplifier transformers price mu metal pink noise
Contextual Info: OPAMP LABS IN C M2E Ja7 ‘i t , 1 fc>3 OODOS 4 1 T> 0 P A 'V-riH~C5 ~ Û f S • 1SINGLE POLARITY P-S MODULESFIFRÇ o sril I ATOPQ AMPLIFIERS - OSCILLATORS A D A IIA D A D C IM/« OPAMP ILABS INC. POWER SUPPLIES-AUDIO CONSOLES 1033 N. SYCAMORE AVENUE F.O.B. LOS ANGELES, CA.

FQP45N03L

Contextual Info: QFET TM FQP45N03L 30V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to

FQT5N20L

Contextual Info: QFET TM FQT5N20L 200V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to

SSF45N20A

Contextual Info: SSF45N20A Advanced Power MOSFET FEATURES BVDSS = 200 V Avalanche Rugged Technology RDS on = 0.065 Ω Rugged Gate Oxide Technology Lower Input Capacitance ID = 26.4 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.) @ VDS = 200V

Contextual Info: $GYDQFHG 3RZHU 026 7 IRFW/I634A FEATURES BVDSS = 250 V ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology RDS(on) = 0.45Ω ♦ Lower Input Capacitance ♦ Improved Gate Charge ID = 8.1 A ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 250V

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 6N90Z Power MOSFET 6.2A, 900V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 6N90Z is an N-channel enhancement mode power MOSFET using UTC’s advanced technology to provide costumers with planar stripe and DMOS technology. This technology allows a

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UF9Z34 Preliminary POWER MOSFET -17A, -55V P-CHANNEL POWER MOSFET „ DESCRIPTION The UTC UF9Z34 is a P-channel Power MOSFET, it uses UTC’s advanced technology to provide the customers with high switching speed and a minimum on-state resistance.

mj 901

Contextual Info: UFZ24N UNISONIC TECHNOLOGIES CO., LTD Power MOSFET 28A, 60V N-CHANNEL POWER MOSFET 1  DESCRIPTION The UTC UFZ24N is an N-channel Power MOSFET, it uses UTC’s advanced technology to provide the customers with a minimum on state resistance, high switching speed and low gate