2025 Search Results

Contextual Info: S R M 20256L7085 PRELIM INAR Y CMOS 256K-BIT STATIC RAM • DESCRIPTION The 20256L70/85 is a 32,768 words x 8 bits asynchronous, static, random access memory fabricated using an advanced CMOS technology. Its very low standby power requirement makes it ideal for applications requiring

2SK595

Abstract: DDCH230 TRANSISTOR IFW transistor BC 552
Contextual Info: SANYO SEMICONDUCTOR CORP 32E D ? tn ? 0 7 b DDCH230 T“29“25. - N-Channel Junction Silicon FE T 2025 .Vafc-.l'^ ,11,Itim _A T Capacitor Microphone Applications 2206 Features . Especially suited for use in audio, telephone capacitor microphones . Excellent voltage characteristic

Contextual Info: RFCR2702 RFCR2702 920MHz to 960MHz Single Junction Drop-In Circulator 2010MHz TO 2025MHz SINGLE JUNCTION DROP-IN CIRCULATOR Package: Drop-in, 0.75in x 0.75in Features  Typical Insertion Loss Less than 0.2dB  -75dBc IMD Typical  Isolation Greater than 25dB

Contextual Info: Low Pass Filter RLPF-EDU1086 Typical Performance Data MHz INSERTION LOSS (dB) RETURN LOSS (dB) 1.0 5.0 20.0 40.0 80.0 100.0 200.0 500.0 1000.0 1500.0 1700.0 1800.0 1825.0 1850.0 1900.0 1950.0 2000.0 2025.0 2075.0 2100.0 2500.0 3000.0 3500.0 4000.0 0.00 0.01

15366

Abstract: AN1235 c.d.m. technology cpld STMicroelectronics CPL
Contextual Info: CPL-WB-01C2 Wide band directional coupler with ISO port Features • 50 Ω nominal input / output impedance ■ Wide operating frequency range 824 MHz to 2025 MHz ■ Low Insertion Loss (< 0.2 dB) ■ 34 dB typical coupling factor ■ High directivity (typical 25 dB)

ADE-25MH

Contextual Info: Frequency Mixer ADE-25MH+ Typical Performance Data RF IN (MHz) 5.0 10.1 109.9 209.6 309.4 409.1 508.9 608.6 708.4 808.1 907.9 1007.7 1107.4 1207.2 1306.9 1406.7 1506.4 1606.2 1706.0 1905.5 2025.2 2124.9 2244.6 2344.4 2464.1 2563.9 2683.6 2783.3 2903.0 3002.8

LFCN-1500

Contextual Info: Ceramic Low Pass Filter LFCN-1500+ Typical Performance Data INSERTION LOSS dB FREQ. (MHz) 50 100 500 1000 1500 1560 1650 1710 1825 1870 1940 2025 2055 2100 2120 2150 2210 2345 2365 2415 2495 2850 3830 4020 4210 4400 4470 4640 5060 6600 6800 6940 7000 7070

VLF-1500

Contextual Info: Coaxial Low Pass Filter VLF-1500+ Typical Performance Data INSERTION LOSS dB FREQ. (MHz) 50 100 500 1000 1500 1560 1650 1710 1825 1870 1940 2025 2055 2100 2120 2150 2210 2345 2365 2415 2495 2850 3830 4020 4210 4400 4470 4640 5060 6800 6940 7000 7070 7750

smd diode af3

Abstract: IC 2025 SMD IC 2025 DIODE BAT 85 SMD PACKAGE
Contextual Info: ISDN Exchange Power Controller IEPC PEB 2025 CMOS IC Features ● Supplies power to up to four transmission lines ● CCITT recommendations compatible for power feed at the “S” interface ● Each line is individually powered and controlled ● Wide field of applications:

Contextual Info: 2 3 5 4 A - A 2:1 Y 3 , 8 5 :00 ,-2025 board d r i l l i n g s -0,4 A 6 LochbiId 7 Mont age l o c h- M ittel linie mounting hole center-line 'S qj c: alle Locher a ll holes 01 ±0,1 00,05 1 — m -©•f +© o+ o+ o+ o+ -o + + o+ o+ ot o+ ©+ o+ o+otof©+©+©+©+©-©-©

20306

Abstract: TSOP31238SD1 03Technical
Contextual Info: SD1 Vishay Semiconductors IR Receiver Modules for Remote Control Systems FEATURES • Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC AVAILABLE FOR: • TSOP31. 1 • TSOP1. 2 13645 “H” “X” 3 “W” 20258 NAME LENS AXIS X

2025

Contextual Info: Pb MSL1 Pb-free * Pb Free Part Customer Name Standard specification System TD-SCDMA Date Part Number FAR-F6KA-2G0175-D4DR Version 2.0b March 31, 2010 Table 1.Electrical specification Pass Band 2010-2025MHz Item Condition Specification Unit Min. Typ. Max.

T718N

Abstract: T1189N T1509N T1989N T358N T508N T588N T879N
Contextual Info: Koppel - Thyristor + Gleichspannung Sperrspannung Bauelement VDRM/RRM 700 V 800 V 1400 V 1600 V + - Kühlblöcke für Wasserkühlung Temp. tA Gleichstrom Verlustl. P d Id Schaltung [°C] [A] [W] 25 302 431 482 609 943 1225 1406 1791 2025 2910 290 413 462 583

MOD1013

Abstract: IGBT 500V 35A
Contextual Info: tSENSITRON MOD1013 SEMICONDUCTOR TECHNICAL DATA DATA SHEET 2025, REV. 12 11 10 9 8 1 2 7 3 4 5 6 600 VOLT, 24 AMP IGBT 3-PHASE BRIDGE ELECTRICAL CHARACTERISTICS PER IGBT DEVICE PARAMETER Tj=250C UNLESS OTHERWISE SPECIFIED SYMBOL MIN TYP MAX UNIT 600 - -

IC 2 5/TR1-M4-2025M

Contextual Info: TR1-M4-2025M www.palconnusa.com 1X9 Dual Fiber Fast Ethernet 100 Mb / s 1310 nm Tx / Rx Description The 1x9 SC duplex 1310nm O-E Transceivers can transmit digital data up to 2 km via Multi-mode optical fiber and the optical performances comply with the Fast

8162-2

Contextual Info: SA1 Vishay Semiconductors IR Receiver Modules for Remote Control Systems FEATURES • Compliant with RoHS WEEE 2002/96/EC 2002/95/EC and e3 AVAILABLE FOR: • TSOP31. • TSOP1. “H” “X” 20423 “W” 20258 NAME LENS AXIS X SA1 13.3 VIEW TYPE

NI2025-CS02

Abstract: D3512
Contextual Info: SAW Bandpass Filter 202545B 1. Features z IF Bandpass Filter z High Attenuation z Single-Ended Operation z DIP Package z Maximum Storage Temperature Range : -40℃ ~ 85℃ z Electrostatics Sensitive Device ESD Package : D3512 2.5±0.2 25.4±0.2 7.6±0.2

NI2020

Abstract: D3512
Contextual Info: SAW Bandpass Filter 202544B 1. Features z IF Bandpass Filter z High Attenuation z Single-Ended Operation z DIP Package z Maximum Storage Temperature Range : -40℃ ~ 85℃ z Electrostatics Sensitive Device ESD Package : D3512 2.5±0.2 25.4±0.2 7.6±0.2

overdrive

Contextual Info: Europe: +49 / 7731 8399 0 | Email: info@meder.com Item No.: USA: +1 / 508 295 0771 | Email: salesusa@meder.com Asia: +852 / 2955 1682 | Email: salesasia@meder.com 2025 Item: KSK-1C90U-2025 Conditions Magnetic properties Min Typ Pull-In excitation Reference value measured in coil- "define operation"

KSK1A87-2025

Contextual Info: Europe: +49 / 7731 8399 0 | Email: info@meder.com Item No.: USA: +1 / 508 295 0771 | Email: salesusa@meder.com Asia: +852 / 2955 1682 | Email: salesasia@meder.com 2025 Item: KSK-1A87-2025 Conditions Magnetic properties Min Typ Pull-In excitation Reference value measured in coil- "define operation"

CPT-8-2025

Contextual Info: CPT-8-2025 Temperature Compensated Power Amplifier 2 GHz - 8 GHz This Power Amplifier offers exceptional performance over the band 2 GHz to 8 GHz with 30 dBm P1dB output power and 32 dB Gain. Teledyne Microwave amplifiers are balanced or feedback designs and manufactured with the latest MIC & MMIC

ATIC 17 D1

Abstract: sm 2025 2025-P
Contextual Info: SIE M EN S ISDN Exchange Power Controller IEPC PEB 2025 CM O S 1C Features • • • • • • • • • • • Supplies power to up to four transm ission lines CCITT recom m endations com patible for power feed at the “S" interface Each line is individually powered and controlled

AN31

Abstract: Si2200 Si2200-X-GM
Contextual Info: Si2200 RF SYNTHESIZER WITH INTEGRATED VCOS FOR SATELLITE RADIO Features ! Dual-band RF synthesizers " " ! ! ! ! IF synthesizer " ! RF1: 2300 to 2500 MHz RF2: 2025 to 2300 MHz ! 62.5 to 1000 MHz Integrated VCOs, loop filters, varactors, and resonators ! ! Minimal external components

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF8P20161HS Rev. 0, 10/2010 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for CDMA base station applications with frequencies from 1880 to 2025 MHz. Can be used in Class AB and Class C for all typical cellular base