208 6V 8A Search Results

Contextual Info: AOT8N60/AOTF8N60 600V,8A N-Channel MOSFET General Description Product Summary The AOT8N60 & AOTF8N60 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.

aotf8N6

Abstract: AOTF8N60 AOT8N60
Contextual Info: AOT8N60/AOTF8N60 600V,8A N-Channel MOSFET General Description Product Summary The AOT8N60 & AOTF8N60 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.

Contextual Info: AOT8N65/AOTF8N65 650V, 8A N-Channel MOSFET General Description Product Summary The AOT8N65 & AOTF8N65 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.

AOT8N65

Contextual Info: AOT8N65/AOTF8N65 650V, 8A N-Channel MOSFET General Description Product Summary The AOT8N65 & AOTF8N65 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.

Contextual Info: AOT8N65/AOTF8N65 650V, 8A N-Channel MOSFET General Description Product Summary The AOT8N65 & AOTF8N65 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.

AOTF4N60

Abstract: AOT4N60 AOT8N60 AOTF8N60
Contextual Info: AOT8N60/AOTF8N60 600V,8A N-Channel MOSFET General Description Product Summary The AOT8N60 & AOTF8N60 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.

AOT8N65

Abstract: Gate Turn-off 100A 750V
Contextual Info: AOT8N65/AOTF8N65 650V, 8A N-Channel MOSFET General Description Product Summary The AOT8N65 & AOTF8N65 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.

AOTF8N65

Abstract: AOT8N65 aotf8N6
Contextual Info: AOT8N65/AOTF8N65 650V, 8A N-Channel MOSFET General Description Product Summary The AOT8N65 & AOTF8N65 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.

aotf8n60l

Abstract: AOT8N60 AOTF8N60
Contextual Info: AOT8N60/AOTF8N60 600V,8A N-Channel MOSFET General Description Product Summary The AOT8N60 & AOTF8N60 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.

Contextual Info: AOT8N60/AOTF8N60 600V,8A N-Channel MOSFET General Description Product Summary The AOT8N60 & AOTF8N60 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.

thyristor SCR 600V 8A

Abstract: scr 600v 8 a JESD22-A101 JESD22-A102 thyristor capacitive discharge ignition SCR I-PAK SCR 40A 600V thyristor SCR 600V 8A igt 50
Contextual Info: Teccor brand Thyristors 4 Amp Sensitive SCRs Sxx04xSx Series Description Excellent unidirectional switches for phase control applications such as heating and motor speed controls. Sensitive gate SCRs are easily triggered with microAmps of current as furnished by sense coils, proximity switches,

Contextual Info: DMP1022UFDF 12V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary RDS ON max ID max TA = +25°C • 0.6mm profile – ideal for low profile applications  PCB footprint of 4mm 15.3mΩ @ VGS = -4.5V -9.5A  Low Gate Threshold Voltage 19mΩ @ VGS = -2.5V

bu 5027

Abstract: 335 for hen nta IHB60T240512C NME1205S NTH0505MC nmv1515s LSM-T/10-D12-C NMA2412D HL02R24S05Y HL02R05D15YC
Contextual Info: DC/DC Converters Isolated Point-of-Load Bus Converters Processor Support Memory Support www.murata-ps.com Overview PoL Converters P If you need a DC/DC converter look no further than… Bus Converters B 5IF
8PSMEhT
/P IIsolated Single About Murata Power Solutions

ZXTC6717MC

Abstract: marking DA1 DFN3020B-8 ZXTC6717MCTA
Contextual Info: A Product Line of Diodes Incorporated ZXTC6717MC DUAL 15V NPN & 12V PNP LOW SATURATION TRANSISTOR COMBINATION Features Mechanical Data • • • • • • • • • • • • • • NPN Transistor • VCEO = 15V • RSAT = 45mΩ • IC = 4.5A PNP Transistor

13001 6D 331

Abstract: 13001 8D 331 13001 s 8d
Contextual Info: BUCHANAN A ll T y c o E le c tr o n ic s P a r t N u m b e r s w it h o u t a c o r r e s p o n d in g B U C H A N A N P a r t N u m b e r a r e lis te d a s b a s e p a r t n u m b e r s o n ly . C o m p le te p a r t n u m b e r s w ith p r e fix e s a n d / o r s u ff ix e s a r e s h o w n o n t h e

ZXTD717MC

Abstract: DFN3020B-8 ZXTD717MCTA
Contextual Info: A Product Line of Diodes Incorporated ZXTD717MC DUAL 12V PNP LOW SATURATION SWITCHING TRANSISTOR Features Mechanical Data • • • • • • • • • • • • • • • • VCEO = -12V RSAT = 60 mΩ IC = -4A Continuous Collector Current Low Equivalent On Resistance

MCHRM

Abstract: hrm2-s-dc24v hrm2-s-dc5v Multicomp relays MCHRM2 DC24V Multicomp relays dc9v
Contextual Info: MCHRM2 Series PCB Power Relays Features: • SPCO contacts. • Sealed to allow washing after flow soldering. Specifications: Coil Data: Nominal Voltage : 3V dc to 48V dc. Nominal Power consumption : 540mW to 720mW. Contact Data: Contact Arrangement : 1 form A, 1 form B, 1 form C.

12M250

Abstract: ABB inverter motor fault code ptc s1450 MC4046 REC310PE72 10 amp 12 volt solar charger circuits SOLAR INVERTER 1000 watts circuit diagram
Contextual Info: Contents System Design. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Batteries . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150 Grid-Tie Systems. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

Hitachi DSA0074

Abstract: HAT2020R MS-012AA DA-20
Contextual Info: ADE–208–439 F Z HAT2020R Silicon N Channel Power MOS FET 7th. Edition Jan. 1996 Application SOP–8 High speed power switching 8 5 7 6 Features • • • • 3 1 2 5 6 7 8 D D D D Low on–resistance Capable of 4V gate drive Low drive current High density mounting

Hitachi DSA002759

Contextual Info: ADE–208–439 F Z HAT2020R Silicon N Channel Power MOS FET 7th. Edition Jan. 1996 Application SOP–8 High speed power switching 8 5 7 6 Features • • • • 3 1 2 5 6 7 8 D D D D Low on–resistance Capable of 4V gate drive Low drive current High density mounting

Contextual Info: UNR Series Single Output, Non-Isolated, 3.3V 8-40 Watt, DC/DC Converters Features • Low cost ■ 5V or 12V inputs ■ 3.3V±1% ±33mV outputs ■ ±0.25% (±8mV) max. line regulation ■ ±0.5% (±17mV) max. load regulation ■ Guaranteed efficiencies to 86%

Contextual Info: UNR Series Single Output, Non-Isolated, 3.3V 8-40 Watt, DC/DC Converters Features N Low cost N 5V or 12V inputs N 3.3V±1% ±33mV outputs N ±0.25% (±8mV) max. line regulation N ±0.5% (±17mV) max. load regulation N Guaranteed efficiencies to 86% N Power densities to 29W/in3

IC 630

Abstract: marking DA1
Contextual Info: A Product Line of Diodes Incorporated ZXTC6717MC COMPLEMENTARY 15V NPN & 12V PNP LOW SATURATION TRANSISTOR Features Mechanical Data NPN Transistor • BVCEO > 15V • IC = 4.5A Continuous Collector Current • Low Saturation Voltage 100mV max @ 1A • RSAT = 45mΩ for a low equivalent On-Resistance

071 0039 scr

Contextual Info: Teccor brand Thyristors 4 Amp Sensitive SCRs Sxx04xSx Series Description Excellent unidirectional switches for phase control applications such as heating and motor speed controls. Sensitive gate SCRs are easily triggered with microAmps of current as furnished by sense coils, proximity switches,