209P Search Results

Contextual Info: BSS 209PW OptiMOS-P Small-Signal-Transistor Feature Product Summary • P-Channel VDS -20 V • Enhancement mode RDS on 550 mΩ • Super Logic Level (2.5 V rated) ID -0.58 A • 150°C operating temperature PG-SOT-323 3 • Avalanche rated • dv/dt rated

PGA209-C-S17U-2

Contextual Info: 209S8 Metal seal 209pin PGA EIAJ Package Code PGA209-C-S17U-2.54 JEDEC Code – 44.45±0.4 Weight g 24.75 4.55MAX 3.8±0.5 40.64±0.3 2.54TYP U T 40.64±0.3 R P N M L K J H G F E D C B A φ1.0TYP 44.45±0.4 φ0.46±0.05 2.54TYP 17 16 15 14 13 12 11 10 9 8

093.101

Abstract: FD36GB200V1.5 X093101 FD36GB200V40 A/M29F002BT(45/55/70/90/209P
Contextual Info: Protistor DCProtistor fuses DC fuses DC Ferrule Fuses 36x250 gR 2000V DC gRB from 0.8 to 40 A Dimensions 255 43 20 ø12 CC 209P . ø 36 Weight 667 g Trip force: 15 N at 20 mm 250 CC 2000 . ø 36 Weight 610 g Main Characteristics Size Current rating IN A

VSO05561

Abstract: smd diode sot-323 marking code k F1 SOT-323 058a
Contextual Info: BSS 209PW Preliminary data OptiMOS-P Small-Signal-Transistor Feature Product Summary • P-Channel VDS -20 V • Enhancement mode RDS on 550 mΩ • Super Logic Level (2.5 V rated) ID -0.58 A • 150°C operating temperature SOT-323 3 • Avalanche rated

4804 B

Abstract: 4804B
Contextual Info: UNCONTROLLED DOCUMENT POLARITY MARK SML-LXL1 209PGDTRPK B REV. 0.60± 0,20 [0.024± 0.008] 2.40± 0.20 [0.094± 0.008] E.C.N. NUMBER AND REVISION COMMENTS E.C.N. #11116. 4.8.04 B E.C.N. #11134. 6.11.04 ELECTRO-OPTICAL CHARACTERISTICS Ta =25-C PARAMETER 01.8O±O.1O

Contextual Info: BSS 209PW OptiMOS -P Small-Signal-Transistor Product Summary Features • P-Channel • Enhancement mode V DS -20 V R DS on ,max 550 mΩ ID -0.63 A • Super Logic level ( 2.5 V rated) • 150°C operating temperature PG-SOT-323 • Avalanche rated • dv /dt rated

smd marking 58a

Abstract: smd diode 46A L6327 VSO05561
Contextual Info: BSS 209PW OptiMOS-P Small-Signal-Transistor Feature Product Summary • P-Channel VDS -20 V • Enhancement mode RDS on 550 mΩ • Super Logic Level (2.5 V rated) ID -0.58 A • 150°C operating temperature PG-SOT-323 3 • Avalanche rated • dv/dt rated

Contextual Info: Semiconductor Fuses DC Fuses Ferrule Fuses 2000V DC 2000 V DC gRB from 0.8 to 40 A Size 36 x 250 Dimensions blow Fuse indicator version = CC 209P 255 43 20 ø12 CC 209P . ø 36 Weight 622 g Standard version without indicator = CC 2000 250 CC 2000 . ø 36

d 132 smd diode

Abstract: D058 GS 063
Contextual Info: BSS 209PW OptiMOS -P Small-Signal-Transistor Product Summary Features • P-Channel • Enhancement mode V DS -20 V R DS on ,max 550 mΩ ID -0.63 A • Super Logic level ( 2.5 V rated) • 150°C operating temperature PG-SOT-323 • Avalanche rated • dv /dt rated

F1 SOT-323

Contextual Info: BSS 209PW OptiMOS-P Small-Signal-Transistor Feature Product Summary • P-Channel VDS -20 V • Enhancement mode RDS on 550 mΩ • Super Logic Level (2.5 V rated) ID -0.58 A • 150°C operating temperature SOT-323 3 • Avalanche rated • dv/dt rated

t10-25 u2

Abstract: G2156 f10107
Contextual Info: Preliminary GS816273AC-300/275/250/225/200 300 MHz–200 MHz 256K x 72 1.8 V or 2.5 V VDD 18Mb S/DCD Sync Burst SRAMs 1.8 V or 2.5 V I/O 209-Pin BGA Commercial Temp Industrial Temp Features • Single/Dual Cycle Deselect selectable • IEEE 1149.1 JTAG-compatible Boundary Scan

8180S18

Abstract: 8180S36 GS8180S36B-300 GS8180S36B-333 512Kx
Contextual Info: Preliminary GS8180S18/36B-333/300/250 18Mb Σ2x1B2 SDR Separate I/O SRAM 209-Bump BGA Commercial Temp Industrial Temp 250 - 333 MHz 1.8 V VDD 1.8 V and 1.5 V I/O Features • SigmaRAM JEDEC standard pinout and package • Dual Single Data Rate interface

LFX125B-03F256C

Abstract: LFX1200EB-04F900I pin out lfx1200eb-04f900i LFX1200EB LFX125B-03FN256C LFX125EB-05F256C LFX125B-04F256C LFX125B-05FN256C LFX125B-03F516C LFX500EB
Contextual Info: ispXPGA Device Datasheet June 2010 Select Devices Discontinued! Product Change Notifications PCNs have been issued to discontinue select devices in this data sheet. The original datasheet pages have not been modified and do not reflect those changes. Please refer to the table below for reference PCN and current product status.

BB209

Abstract: CYM52KNP72V33A-10BBC CYM52KNP72V33A-13BBC CYM52KNP72V33A-15BBC
Contextual Info: PRELIMINARY CYM52KNP72AV33 512Kx72 Pipelined MCM with NoBL Architecture Features • No Bus Latency, no dead cycles between write and read cycles • Internally synchronized registered outputs eliminate the need to control OE • Single 3.3V –5% and +5% power supply VDD

CXK79M36C160GB

Abstract: CXK79M36C160GB-33 CXK79M36C160GB-4 CXK79M36C160GB-5 CXK79M72C160GB CXK79M72C160GB-33 CXK79M72C160GB-4 CXK79M72C160GB-5
Contextual Info: SONY ΣRAM CXK79M72C160GB / CXK79M36C160GB 18Mb 1x1Lp HSTL High Speed Synchronous SRAMs 256Kb x 72 or 512Kb x 36 33/4/5 Preliminary Description The CXK79M72C160GB (organized as 262,144 words by 72 bits) and the CXK79M36C160GB (organized as 524,288 words

PCI1131

Abstract: PCI1210 PCI1221 PCI CardBus Controllers PCI4450 BGA and QFP Package PCI1420 ghk diode TI PCI PCI1220
Contextual Info: The world leader in CardBus and 1394 solutions PCIBus Solutions Family Overview PCIBus Solutions TI PCIBus mission To add value to our customers’ products by ensuring the highest level of quality, reliability, cost effectiveness, product services, and fastest time to market

Contextual Info: IS61LSSDH51236 IS61LSSDH102418 ISSI ΣQUAD 18Mb Σ2x2B2 ADVANCE INFORMATION DECEMBER 2002 DDR SEPERATE I/O SRAM FEATURES • Simultaneous Read and Write SigmaQuad Interface • SigmaRAM™ JEDEC standard pinout/package • Dual Double Data Rate interface

GS8644V18

Abstract: GS8644V18B GS8644V18B-250 GS8644V72
Contextual Info: Product Preview GS8644V18 B/E /GS8644V36(B/E)/GS8644V72(C) 119-, 165-, & 209-Pin BGA Commercial Temp Industrial Temp 4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs Features 250 MHz–133MHz 1.8 V VDD 1.8 V I/O Data Output Register. Holding FT high places the RAM in

CXA1209P

Contextual Info: ¡ 12 - CXA1 2 0 9 /1 2 9 9 P rgb ^ j K?-f/< I« H C X A 1 2 0 9 P /1 2 9 9 P Ü , « f f l l C T . R G B 7 - ' K 7 - f ' < « ê È i ï t S . fflO T R G B « ^ -íü I«í» •« tí • I : 12V typ) (11 — 13V) • R G B ^-a-= ¡w u - 1 ,<.y'r — =J

GS8644Z

Abstract: GS8644ZV18 GS8644ZV18B GS8644ZV72
Contextual Info: Product Preview GS8644ZV18 B/E /GS8644ZV36(B/E)/GS8644ZV72(C) 119-, 165-, & 209-Pin BGA Commercial Temp Industrial Temp 72Mb Pipelined and Flow Through Synchronous NBT SRAM Features 250 MHz–133MHz 1.8 V VDD 1.8 V I/O Because it is a synchronous device, address, data inputs, and

booth multiplier

Abstract: 97p sped 16X1 16X2 LFX200B-03f256i e30 c15 100 12p
Contextual Info: ispXPGA Family TM January 2004 Preliminary Data Sheet • Non-volatile, Infinitely Reconfigurable ■ Eight sysCLOCK Phase Locked Loops PLLs for Clock Management • Instant-on - Powers up in microseconds via on-chip E2CMOS based memory • No external configuration memory

GS8162V18AB-350

Contextual Info: Preliminary GS8162V18A B/D /GS8162V36A(B/D)/GS8162V72A(C) 119-, 165- & 209-Pin BGA Commercial Temp Industrial Temp 350 MHz–150 MHz 1.8 V VDD 1.8 V I/O 1M x 18, 512K x 36, 256K x 72 18Mb S/DCD Sync Burst SRAMs Features via the FT mode . Holding the FT mode pin low places the RAM in

GW 9n

Abstract: 221-PIN
Contextual Info: ADVANCE ‡ 16Mb: 256K x 72 FLOW-THROUGH ZBT SRAM 16Mb ZBT SRAM MT55L256Y72F, MT55V256V72F, 3.3V VDD, 3.3V or 2.5V I/O; 2.5V VDD 2.5V I/O FEATURES • • • • • • • • • • • • • • • • 221-PIN FBGA High frequency and 100 percent bus utilization

Contextual Info: GS832218/36/72 B/E/C -xxxV 119-, 165-, & 209-Pin BGA Commercial Temp Industrial Temp 2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs Features 250 MHz–133 MHz 1.8 V or 2.5 V VDD 1.8 V or 2.5 V I/O Flow Through/Pipeline Reads The function of the Data Output register can be controlled by the