GS8644Z Search Results

GS8644Z

Abstract: GS8644ZV18 GS8644ZV18B GS8644ZV72
Contextual Info: Product Preview GS8644ZV18 B/E /GS8644ZV36(B/E)/GS8644ZV72(C) 119-, 165-, & 209-Pin BGA Commercial Temp Industrial Temp 72Mb Pipelined and Flow Through Synchronous NBT SRAM Features 250 MHz–133MHz 1.8 V VDD 1.8 V I/O Because it is a synchronous device, address, data inputs, and

GS8644Z36GE-250

Abstract: GS8644Z18 GS8644Z18B GS8644Z36B GS8644Z72C
Contextual Info: Preliminary GS8644Z18 B/E /GS8644Z36(B/E)/GS8644Z72(C) 119-, 165-, & 209-Pin BGA Commercial Temp Industrial Temp 72Mb Pipelined and Flow Through Synchronous NBT SRAM Features 250 MHz–133MHz 2.5 V or 3.3 V VDD 2.5 V or 3.3 V I/O Because it is a synchronous device, address, data inputs, and

Contextual Info: GS8644Z18E/GS8644Z36E 165-Pin BGA Commercial Temp Industrial Temp 72Mb Pipelined and Flow Through Synchronous NBT SRAM Features 250 MHz–133MHz 2.5 V or 3.3 V VDD 2.5 V or 3.3 V I/O Because it is a synchronous device, address, data inputs, and read/write control inputs are captured on the rising edge of the

mcm 250

Contextual Info: GS8644Z18/36E-xxxV 165-Bump BGA Commercial Temp Industrial Temp 72Mb Pipelined and Flow Through Synchronous NBT SRAM Features 250 MHz–133MHz 1.8 V or 2.5 V VDD 1.8 V or 2.5 V I/O Because it is a synchronous device, address, data inputs, and read/write control inputs are captured on the rising edge of the

GS8644Z

Contextual Info: GS8644Z18/36E-xxxV 165-Bump BGA Commercial Temp Industrial Temp 72Mb Pipelined and Flow Through Synchronous NBT SRAM Features 250 MHz–133MHz 1.8 V or 2.5 V VDD 1.8 V or 2.5 V I/O Because it is a synchronous device, address, data inputs, and read/write control inputs are captured on the rising edge of the

Contextual Info: Product Preview GS8644Z18 B/E /GS8644Z36(B/E)/GS8644Z72(C) 119, 165 & 209 BGA Commercial Temp Industrial Temp 72Mb Pipelined and Flow Through Synchronous NBT SRAM Features • NBT (No Bus Turn Around) functionality allows zero wait Read-Write-Read bus utilization; fully pin-compatible with

Contextual Info: GS8644Z18 B/E /GS8644Z36(B/E)/GS8644Z72(C) 119-, 165-, & 209-Pin BGA Commercial Temp Industrial Temp 72Mb Pipelined and Flow Through Synchronous NBT SRAM Features 250 MHz–133MHz 2.5 V or 3.3 V VDD 2.5 V or 3.3 V I/O Because it is a synchronous device, address, data inputs, and

Contextual Info: Preliminary GS8644Z18/36E-xxxV 165-Bump BGA Commercial Temp Industrial Temp 72Mb Pipelined and Flow Through Synchronous NBT SRAM Features 250 MHz–133MHz 1.8 V or 2.5 V VDD 1.8 V or 2.5 V I/O Because it is a synchronous device, address, data inputs, and read/write control inputs are captured on the rising edge of the

GS8644Z36B

Abstract: GS8644Z72C GS8644ZV18 GS8644ZV72
Contextual Info: Product Preview GS8644ZV18 B/E /GS8644ZV36(B/E)/GS8644ZV72(C) 119, 165 & 209 BGA Commercial Temp Industrial Temp 72Mb Pipelined and Flow Through Synchronous NBT SRAM Features • NBT (No Bus Turn Around) functionality allows zero wait Read-Write-Read bus utilization; fully pin-compatible with

GS8644ZV18

Abstract: GS8644ZV18B GS8644ZV72
Contextual Info: Preliminary GS8644ZV18 B/E /GS8644ZV36(B/E)/GS8644ZV72(C) 119, 165 & 209 BGA Commercial Temp Industrial Temp 72Mb Pipelined and Flow Through Synchronous NBT SRAM Features • NBT (No Bus Turn Around) functionality allows zero wait Read-Write-Read bus utilization; fully pin-compatible with

Contextual Info: GS8644Z18E/GS8644Z36E 209-Pin BGA Commercial Temp Industrial Temp 72Mb Pipelined and Flow Through Synchronous NBT SRAM Features 250 MHz–133MHz 2.5 V or 3.3 V VDD 2.5 V or 3.3 V I/O Because it is a synchronous device, address, data inputs, and read/write control inputs are captured on the rising edge of the

Contextual Info: Preliminary GS8644Z18 B/E /GS8644Z36(B/E)/GS8644Z72(C) 119-, 165-, & 209-Pin BGA Commercial Temp Industrial Temp 72Mb Pipelined and Flow Through Synchronous NBT SRAM Features 250 MHz–133MHz 2.5 V or 3.3 V VDD 2.5 V or 3.3 V I/O Because it is a synchronous device, address, data inputs, and

Contextual Info: Product Preview GS8644Z18 B/E /GS8644Z36(B/E)/GS8644Z72(C) 119, 165 & 209 BGA Commercial Temp Industrial Temp 72Mb Pipelined and Flow Through Synchronous NBT SRAM Features • NBT (No Bus Turn Around) functionality allows zero wait Read-Write-Read bus utilization; fully pin-compatible with

GS8644Z36E-225I

Abstract: GS8644Z18 GS8644Z18B GS8644Z36B GS8644Z72 GS8644Z72C GS8644Z36
Contextual Info: Product Preview GS8644Z18 B/E /GS8644Z36(B/E)/GS8644Z72(C) 119-, 165-, & 209-Pin BGA Commercial Temp Industrial Temp 72Mb Pipelined and Flow Through Synchronous NBT SRAM Features • NBT (No Bus Turn Around) functionality allows zero wait Read-Write-Read bus utilization; fully pin-compatible with

Contextual Info: GS8644Z18/36E-xxxV 165-Bump BGA Commercial Temp Industrial Temp 72Mb Pipelined and Flow Through Synchronous NBT SRAM Features 250 MHz–133MHz 1.8 V or 2.5 V VDD 1.8 V or 2.5 V I/O Because it is a synchronous device, address, data inputs, and read/write control inputs are captured on the rising edge of the

26020

Abstract: ir 21015 GS8644Z18E-133 GS8644Z18E-150 GS8644Z18E-166 GS8644Z18E-200 GS8644Z18E-225 GS8644Z18E-250 GS8644Z36E-150 GS8644Z36E-166
Contextual Info: Preliminary GS8644Z18/36E-xxxV 165-Bump BGA Commercial Temp Industrial Temp 72Mb Pipelined and Flow Through Synchronous NBT SRAM Features 250 MHz–133MHz 1.8 V or 2.5 V VDD 1.8 V or 2.5 V I/O Because it is a synchronous device, address, data inputs, and read/write control inputs are captured on the rising edge of the

Contextual Info: Preliminary GS8644Z18 B/E /GS8644Z36(B/E)/GS8644Z72(C) 119, 165 & 209 BGA Commercial Temp Industrial Temp 72Mb Pipelined and Flow Through Synchronous NBT SRAM Features • NBT (No Bus Turn Around) functionality allows zero wait Read-Write-Read bus utilization; fully pin-compatible with

GS8644Z18E-250I

Abstract: 8644ZXX gs8644z36ge GS8644Z18E-133 GS8644Z18E-150 GS8644Z18E-166 GS8644Z18E-200 GS8644Z18E-225 GS8644Z18E-250 GS8644Z36
Contextual Info: GS8644Z18E/GS8644Z36E 165-Pin BGA Commercial Temp Industrial Temp 72Mb Pipelined and Flow Through Synchronous NBT SRAM Features 250 MHz–133MHz 2.5 V or 3.3 V VDD 2.5 V or 3.3 V I/O Because it is a synchronous device, address, data inputs, and read/write control inputs are captured on the rising edge of the

K7A803609B-PC25

Abstract: K7A403600B-PC16 K7I161882B-EC16 K6R4016V1D-TC08 K7A403600M-QC16 K7I161882B-EC30 K6R4008V1C-JC12 K6R4016V1D-UC10 K6R1008V1C-JC10 K7R643682M-FC20
Contextual Info: SAMSUNG # - Connect pin 14 FT pin to Vss * - Tie down extra four I/Os with resistor K6R1016V1C-FC10 K6R1016V1C-FC12 K6R1016V1C-FC15 K6R1016V1C-FC20 K6R1016V1C-JC10 K6R1016V1C-JC12 K6R1016V1C-JC15 K6R1016V1C-JC20 K6R1016V1C-TC10 K6R1016V1C-TC12 K6R1016V1C-TC15

GS8673EQ

Abstract: SIGMA SigmaQuad-IIIe GS8673ED36 5502M GS8322Z36 GS816032 GS8171DW GS8673ET36 GS8673ED18
Contextual Info: Untitled3.fm Page 1 Tuesday, March 30, 2010 10:58 AM Untitled4.fm Page 1 Tuesday, March 30, 2010 11:08 AM SigmaQuad_2010_0408.fm Page 3 Thursday, April 15, 2010 11:44 AM SigmaQuad-IIIe SRAMs 72Mb SigmaQuad-IIIe+ Config GS8673ED37Ayy-### GS8673ED19Ayy-### 2M x 36

GS8640Z36

Abstract: GS840Z18A GS816032 GS8342T36 GS8662Q18
Contextual Info: Untitled3.fm Page 1 Wednesday, September 10, 2008 12:03 PM toc.fm Page 1 Wednesday, September 10, 2008 11:05 AM Untitled1.fm Page 1 Wednesday, September 10, 2008 11:32 AM SigmaQuad_new_20080904.fm Page 4 Wednesday, September 10, 2008 11:04 AM SigmaQuad/ CIO/SIO