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    20N160 Search Results

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    20N160 Price and Stock

    IXYS Corporation IXGH20N160

    IGBT 600V 40A TO247AD
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    DigiKey IXGH20N160 Tube
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    CTS Corporation 520N16020DTR

    2.5mm x 2.0mm Surface Mount Clip
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    DigiKey 520N16020DTR Reel 3,000
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    Avnet Americas 520N16020DTR Reel 10 Weeks 3,000
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    Mouser Electronics 520N16020DTR
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    CTS Corporation 520N16005ITR

    2.5mm x 2.0mm Surface Mount Clip
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    DigiKey 520N16005ITR Reel 3,000
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    Avnet Americas 520N16005ITR Reel 10 Weeks 3,000
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    CTS Corporation 520N16010CTR

    2.5mm x 2.0mm Surface Mount Clip
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    DigiKey 520N16010CTR Reel 3,000
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    Avnet Americas 520N16010CTR Reel 10 Weeks 3,000
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    Mouser Electronics 520N16010CTR
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    CTS Corporation 520N16020ITR

    2.5mm x 2.0mm Surface Mount Clip
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    DigiKey 520N16020ITR Reel 3,000
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    Avnet Americas 520N16020ITR Reel 10 Weeks 3,000
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    Mouser Electronics 520N16020ITR
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    20N160 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Capacitive Sensors CFBM 20N1600 Capacitive Sensors dimension drawing 80 ø 20 Pot LED general data photo mounting type shielded nominal sensing distance Sn 10 mm nominal sensing distance Sn adjustable 2 . 10 mm temperature drift ± 15 % +10 . +70 °C


    Original
    PDF 20N1600

    Untitled

    Abstract: No abstract text available
    Text: Capacitive proximity sensors CFBM 20N1600 Capacitive proximity sensors dimension drawing 80 ø 20 Pot LED general data photo mounting type shielded nominal sensing distance Sn 10 mm nominal sensing distance Sn adjustable 2 . 10 mm temperature drift ± 15 % +10 . +70 °C


    Original
    PDF 20N1600

    20N160

    Abstract: crt flyback
    Text: High Voltage BIMOSFETTM Monolithic Bipolar MOS Transistor IXBH 20N140 IXBH 20N160 VCES IC25 VCE sat tfi N-Channel, Enhancement Mode C = = = = 1400/1600 V 20 A 4.7 V typ. 40 ns TO-247 AD G G C E C (TAB) E G = Gate, E = Emitter, Symbol Conditions Maximum Ratings


    Original
    PDF 20N140 20N160 O-247 IXBH20 20N160 crt flyback

    Untitled

    Abstract: No abstract text available
    Text: Capacitive proximity sensors CFBM 20N1600 Capacitive proximity sensors dimension drawing 80 ø 20 Pot LED general data photo mounting type shielded nominal sensing distance Sn 10 mm nominal sensing distance Sn adjustable 2 . 10 mm temperature drift ± 15 % +10 . +70 °C


    Original
    PDF 20N1600

    Capacitive proximity Sensors

    Abstract: No abstract text available
    Text: Capacitive proximity sensors CFBM 20N1600 Capacitive proximity sensors dimension drawing 80 ø 20 Pot LED general data photo mounting type shielded nominal sensing distance Sn 10 mm nominal sensing distance Sn adjustable 2 . 10 mm temperature drift ± 15 % +10 . +70 °C


    Original
    PDF 20N1600 Capacitive proximity Sensors

    Untitled

    Abstract: No abstract text available
    Text: Capacitive proximity sensors CFBM 20N1600 Capacitive proximity sensors dimension drawing 80 ø 20 Pot LED general data photo mounting type shielded nominal sensing distance Sn 10 mm nominal sensing distance Sn adjustable 2 . 10 mm temperature drift ± 15 % +10 . +70 °C


    Original
    PDF 20N1600

    Untitled

    Abstract: No abstract text available
    Text: Capacitive proximity sensors CFBM 20N1600 Capacitive proximity sensors dimension drawing 80 ø 20 Pot LED general data photo mounting type shielded nominal sensing distance Sn 10 mm nominal sensing distance Sn adjustable 2 . 10 mm temperature drift ± 15 % +10 . +70 °C


    Original
    PDF 20N1600

    20N1600

    Abstract: No abstract text available
    Text: Capacitive proximity sensors CFBM 20N1600 Capacitive proximity sensors dimension drawing 80 ø 20 Pot LED general data photo mounting type shielded nominal sensing distance Sn 10 mm nominal sensing distance Sn adjustable 2 . 10 mm temperature drift ± 15% +10 . +70 °C


    Original
    PDF 20N1600 20N1600

    Untitled

    Abstract: No abstract text available
    Text: Capacitive proximity sensors CFBM 20N1600 Capacitive proximity sensors dimension drawing 80 ø 20 Pot LED general data photo mounting type shielded nominal sensing distance Sn 10 mm nominal sensing distance Sn adjustable 2 . 10 mm temperature drift ± 15 % +10 . +70 °C


    Original
    PDF 20N1600

    Untitled

    Abstract: No abstract text available
    Text: Capacitive proximity sensors CFBM 20N1600 Capacitive proximity sensors dimension drawing 79,5 ø 20 Pot LED general data photo nominal sensing distance Sn 10 mm nominal sensing distance Sn adjustable 2 . 10 mm mounting type flush GND electrode yes temperature drift


    Original
    PDF 20N1600

    Untitled

    Abstract: No abstract text available
    Text: Capacitive proximity sensors CFBM 20N1600 Capacitive proximity sensors dimension drawing 80 ø 20 Pot LED general data photo mounting type shielded nominal sensing distance Sn 10 mm nominal sensing distance Sn adjustable 2 . 10 mm temperature drift ± 15% +10 . +70 °C


    Original
    PDF 20N1600

    Untitled

    Abstract: No abstract text available
    Text: Capacitive proximity sensors CFBM 20N1600 Capacitive proximity sensors dimension drawing 79,5 ø 20 Pot LED general data photo nominal sensing distance Sn 10 mm nominal sensing distance Sn adjustable 2 . 10 mm mounting type shielded GND electrode yes temperature drift


    Original
    PDF 20N1600

    20N160

    Abstract: 20N140
    Text: High Voltage BIMOSFETTM Monolithic Bipolar MOS Transistor IXBH 20N140 IXBH 20N160 VCES IC25 VCE sat tfi N-Channel, Enhancement Mode C = = = = 1400/1600 V 20 A 4.7 V typ. 40 ns TO-247 AD G G C E C (TAB) E G = Gate, E = Emitter, Symbol Conditions Maximum Ratings


    Original
    PDF 20N140 20N160 O-247 20N160 IXBH20

    Untitled

    Abstract: No abstract text available
    Text: Capacitive proximity sensors CFBM 20 Capacitive proximity sensors sample drawing 80 ø 20 Pot LED general data sample picture mounting type shielded nominal sensing distance Sn 10 mm nominal sensing distance Sn adjustable 2 . 10 mm temperature drift


    Original
    PDF 20N1600 20N3600 20P1600 20P3600

    Untitled

    Abstract: No abstract text available
    Text: Capacitive sensors Versatile, contactless, durable Edition 2012/2013 With capacitive sensors from Baumer you can complete almost any task. Visibly better: Baumer sensors. The Baumer Group is an internationally leading manufacturer of sensors and system solutions for factory and process automation. Partnership, precision and


    Original
    PDF CH-8501 0x/12 11xxxxxx

    Untitled

    Abstract: No abstract text available
    Text: Capacitive proximity sensors CFBM 20 Capacitive proximity sensors sample drawing 80 ø 20 Pot LED sample picture general data mounting type shielded nominal sensing distance Sn 10 mm nominal sensing distance Sn adjustable 2 . 10 mm temperature drift


    Original
    PDF 20N1600 20N3600 20P1600 20P3600

    Untitled

    Abstract: No abstract text available
    Text: Capacitive proximity sensors CFBM 20 Capacitive proximity sensors sample drawing 80 ø 20 Pot LED general data sample picture mounting type shielded nominal sensing distance Sn 10 mm nominal sensing distance Sn adjustable 2 . 10 mm temperature drift


    Original
    PDF 20N1600 20N3600 20P1600 20P3600

    Untitled

    Abstract: No abstract text available
    Text: Capacitive proximity sensors CFBM 20 Capacitive proximity sensors sample drawing 80 ø 20 Pot LED general data sample picture mounting type shielded nominal sensing distance Sn 10 mm nominal sensing distance Sn adjustable 2 . 10 mm temperature drift


    Original
    PDF 20N1600 20N3600 20P1600 20P3600

    SAR oscillateur

    Abstract: No abstract text available
    Text: Détecteurs capacitifs Polyvalents, sans contact, durables Edition 2012/2013 Les détecteurs capacitifs de Baumer, la solution à presque toutes vos tâches. Visiblement meilleurs: les détecteurs de Baumer. Le Groupe Baumer est un leader international en matière de fabrication de détecteurs et de solutions de systèmes pour l’automatisation des procédés et des lignes


    Original
    PDF CH-8501 0x/12 11xxxxxx SAR oscillateur

    20p16

    Abstract: LED80
    Text: Capacitive proximity sensors CFBM 20 Capacitive proximity sensors sample drawing 80 ø 20 Pot LED sample picture general data mounting type shielded nominal sensing distance Sn 10 mm nominal sensing distance Sn adjustable 2 . 10 mm temperature drift


    Original
    PDF 20N1600 20N3600 20P1600 20P3600 20p16 LED80

    7n60b

    Abstract: 35N120u1 ixys dsei 45-12a DSDI 35-12A 20N80 80n06 80n60 VVY 40-16IO1 IXYS CS 2-12 IXFX 44N80
    Text: Alphanumerical Index A AXC-051 AXC-053 AXC-101 AXC-102 AXL-001 AXL-051 AXV-102 C CS 142-12io8 CS 142-16io8 CS 19-08ho1 CS 19-08ho1S CS 19-12ho1 CS 19-12ho1S CS 20-12io1 CS 20-14io1 CS 20-16io1 CS 23-08io2 CS 23-12io2 CS 23-16io2 CS 300-12io3 CS 300-16io3 CS 300-18io3


    Original
    PDF AXC-051 AXC-053 AXC-101 AXC-102 AXL-001 AXL-051 AXV-102 142-12io8 142-16io8 19-08ho1 7n60b 35N120u1 ixys dsei 45-12a DSDI 35-12A 20N80 80n06 80n60 VVY 40-16IO1 IXYS CS 2-12 IXFX 44N80

    Untitled

    Abstract: No abstract text available
    Text: n ix Y S Advanced Technical Information High Voltage BIMOSFET Monolithic Bipolar MOS Transistor V CES IXBH 20N140 IXBH 20N160 ^C25 V CE sat N -C hannel, E n hance m en t M ode tfi 1400/1600 V 20 A 5.4 V typ. 35 ns TO-247 AD Symbol Conditions Maximum Ratings


    OCR Scan
    PDF 20N140 20N160 O-247 D-68623

    IXBH 40N160

    Abstract: 20N120D1 Insulated Gate Bipolar Transistors 55N120D1 20N120A 20N60BD1 9N140 ixbh9n160 30N120 35N60BD1
    Text: NPT Insulated Gate Bipolar Transistors IGBT D series (SCSOA) V T = 1 5 0 °C ► New V ► IXDP 20N60B 600 v CE(aal) c lM typ. typ. Tc - 25°C Tc = 90°C A A ► IXDP 35N60B ► IXDH 35N60B ► IXDA 20N120A 'c •c CES PF 21 2.0 800 58 40 2.0 ^ 1600 □


    OCR Scan
    PDF 20N60B 35N60B 20N120A 20N120 30N120 75N120A T0-220 9N140 9N160 IXBH 40N160 20N120D1 Insulated Gate Bipolar Transistors 55N120D1 20N120A 20N60BD1 9N140 ixbh9n160 30N120 35N60BD1

    50N60

    Abstract: 50N100 50n80 40N160 9N160G 50N6
    Text: BIMOSFET High Speed Types in 1400 und 1600 V ► New •e. A *C90 Tc = 25 °C Tc = 90 °C Gate drive V í-H < r o" 1 V CES V Type A □ ^1 tvp ns Package style 6 z Outlines on page 91-100 ri> G = Gate, E = Emitter, LL C = Collector thJC K/W T ,= 125 °C


    OCR Scan
    PDF 9N140G 15N140 20N140 40N140 9N160G 15N160 20N160 50N60 50N100 50n80 40N160 50N6