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    50N100 Search Results

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    50N100 Price and Stock

    Frontier Electronics Co Ltd 0201G250N100DCT

    CAP CER 10PF 25V C0G/NP0 0201
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    DigiKey 0201G250N100DCT Reel 30,000 1
    • 1 $0.05
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    Frontier Electronics Co Ltd 0201G250N100JCT

    CAP CER 10PF 25V C0G/NP0 0201
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 0201G250N100JCT Reel 30,000 15,000
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    Frontier Electronics Co Ltd 0402G250N100GCT

    CAP CER 10PF 25V C0G/NP0 0402
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 0402G250N100GCT Reel 20,000 1
    • 1 $0.01
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    Frontier Electronics Co Ltd 0201M250N100JCT

    CAP CER 10PF 25V C0G/NP0 0201
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 0201M250N100JCT Reel 15,000 1
    • 1 $0.04
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    Flip Electronics NXH350N100H4Q2F2PG

    IC MODULE PIM 350A 1000V
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    DigiKey NXH350N100H4Q2F2PG Tray 8,027 5
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    • 10 $118.54
    • 100 $118.54
    • 1000 $118.54
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    50N100 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    50N100

    Abstract: 50N120 IXRH 50N120 bi-directional switches IGBT induction heat resonant D-68623
    Text: Advanced Technical Information IXRH 50N120 VCES = 1000 / 1200 V IXRH 50N100 IC25 = 60 A IGBT with Reverse Blocking capability VCE sat = 2.5 V tf = 75 ns C TO-247 AD G G C E C (TAB) E G = Gate, E = Emitter, C = Collector, TAB = Collector Features IGBT Symbol


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    PDF 50N120 50N100 O-247 50N120 50N100 IXRH 50N120 bi-directional switches IGBT induction heat resonant D-68623

    rr0805

    Abstract: RGR07 RNC60H Resistor 22 ohms rb60 resistor MIL-R-39007 rr1206 MIL-R-26 RW79 MIL-R-26 MIL-R-39005 RR2512
    Text: Product Approvals - CECC Type Specification Style MFR3 MFR3 MFR4 MFR4 MFR5 MFR5 BS CECC 40101-019 GX GZ FX FZ EX EZ 1R0 1R 01R0 1R0 9R1 9R1 - MFR4 MFR4 MFR5 MFR5 BS CECC 40101-803 BK BC CK CC 10R 10R 9R1 9R1 FA025 FA05 FA1 FA94 BS CECC 40101-019 FX EX DX CX


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    PDF FA025 50n-100K 2-121Kfl 100i2-100Kn 2-100K 2-100KC2 2-100KQ MIL-R-55342 M55342/6 rr0805 RGR07 RNC60H Resistor 22 ohms rb60 resistor MIL-R-39007 rr1206 MIL-R-26 RW79 MIL-R-26 MIL-R-39005 RR2512

    30n60

    Abstract: 40N60AU1 40N60 igbt 30N60 30N60A 50N100 30n60* 227 30N60U1 IXSN40N60AU1 50N60U1
    Text: MbflbZZb 00Q1737 323 ¡IX Y insulated Gate Bipolar Transistors IGBT "S" series with im proved SC SO A capability Type 'i > New IXSH IXSH IXSH IXSH IXSH IXSH IXSH ► IXSH IXSH IXSH IXSH IXSH > IXSH > IXSH ÍXSM ÍXSM !XSM 20N60 30N60 40N60 25N100 45N100


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    PDF 00Q1737 20N60 O-247 30N60 40N60 25N100 45N100 45N120 20N60A 24N60A 30n60 40N60AU1 40N60 igbt 30N60 30N60A 50N100 30n60* 227 30N60U1 IXSN40N60AU1 50N60U1

    Untitled

    Abstract: No abstract text available
    Text: MbñbEZb 0 0 0 1 7 3 ? 323 II X Y Insulated Gate Bipolar Transistors IGBT "S" series with im proved SC SO A capability Type i Vcts • c ■ c Tc = 9 0 C Tc = 25'C ► New max. typ. C typ. pF 1800 2800 4500 pF 45 50 90 HS US KW W 0.4 0.4 0.4 10 0.83 0.62


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    PDF 20N60 30N60 40N60 25N100 45N100 45N120 40N60AU1 35N100U1 55N100U1Â 52N60AU1Â

    50N60

    Abstract: 50N100 50n80 40N160 9N160G 50N6
    Text: BIMOSFET High Speed Types in 1400 und 1600 V ► New •e. A *C90 Tc = 25 °C Tc = 90 °C Gate drive V í-H < r o" 1 V CES V Type A □ ^1 tvp ns Package style 6 z Outlines on page 91-100 ri> G = Gate, E = Emitter, LL C = Collector thJC K/W T ,= 125 °C


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    PDF 9N140G 15N140 20N140 40N140 9N160G 15N160 20N160 50N60 50N100 50n80 40N160 50N6

    mm036

    Abstract: ml075-12 MM036-12 mm036-16 mm075-12io1 mm062 DSI 12-06A MDD95-16N1B ME03 21N100
    Text: 17 17 17 17 17 17 17 17 17 17 17 17 17 17 13 15 15 13 13 13 13 14 14 14 14 13 13 13 13 13 15 15 15 13 13 13 13 13 13 14 14 14 14 14 14 13 13 13 15 15 15 14 14 14 DSAI35-12A DSAI 35-16A DSAI 35-18A DSAI 75-12A DSAI 75-16A DSAI 75-18A DSEI 12-06A DSEI 12-1OA


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    PDF DSAI35-12A 5-16A 5-18A 5-12A 2-06A 12-1OA 2-12A 2x30-Q4C mm036 ml075-12 MM036-12 mm036-16 mm075-12io1 mm062 DSI 12-06A MDD95-16N1B ME03 21N100