20E DIODE Search Results

Si4114DY

Abstract: Si4114DY-T1-E3 Si4114DY-T1-GE3
Contextual Info: New Product Si4114DY Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A)a 0.006 at VGS = 10 V 20e 0.007 at VGS = 4.5 V 20e • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

Contextual Info: New Product Si4114DY Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A)a 0.006 at VGS = 10 V 20e 0.007 at VGS = 4.5 V 20e • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

Contextual Info: New Product Si4114DY Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A)a 0.006 at VGS = 10 V 20e 0.007 at VGS = 4.5 V 20e • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

Si4114DY

Abstract: Si4114DY-T1-E3 Si4114DY-T1-GE3
Contextual Info: New Product Si4114DY Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A)a 0.006 at VGS = 10 V 20e 0.007 at VGS = 4.5 V 20e • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

Contextual Info: New Product Si4114DY Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A)a 0.006 at VGS = 10 V 20e 0.007 at VGS = 4.5 V 20e • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

Contextual Info: New Product Si4114DY Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A)a 0.006 at VGS = 10 V 20e 0.007 at VGS = 4.5 V 20e • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

sem 2105

Contextual Info: PERFORMANCE SEMICONDUCTOR 20E J> • 70^55^7 OOOOt.51 2 ■ T -V 6 -3 M O P4C1982/P4C1982L, P4C1981 /P4C1981L ULTRA HIGH SPEED 16K x 4 CMOS STATIC RAMS A -

RGP02-15

Abstract: ignition module
Contextual Info: RGP02-12E thru RGP02-20E Vishay General Semiconductor Glass Passivated Junction Fast Switching Rectifier FEATURES • Superectifier structure for high reliability condition • Cavity-free glass-passivated junction SUPERECTIFIER • Fast switching for high efficiency

RGP02-15

Abstract: DO-204AL J-STD-002 RGP02-12E RGP02-20E ignition module
Contextual Info: RGP02-12E thru RGP02-20E Vishay General Semiconductor Glass Passivated Junction Fast Switching Rectifier FEATURES • Superectifier structure for high reliability condition • Cavity-free glass-passivated junction SUPERECTIFIER • Fast switching for high efficiency

VARISTOR TNR 560

Abstract: 20e221 20E431K 20E-471K 20E471K 20E-821K 20E-241K
Contextual Info: TNR E SERIES ● 20E Series Model Number TNR20E221K TNR20E241K TNR20E271K TNR20E391K TNR20E431K TNR20E471K TNR20E511K TNR20E681K TNR20E751K TNR20E821K TNR20E911K TNR20E102K TNR20E112K Maximum Applied Voltage ACrms V DC(V) 140 150 175 250 275 300 315 420

Contextual Info: ADE-20e-234A Z) HVU363A Variable Capacitance Diode for TV tuner HITACHI Features Rev. 1 Nov. 1994 Outline • High capacitance ratio.(n=15.0Typ) • Low series resistance (rs=0.75Qmax) and good C-V linearity. • Ultra small Eesin Eackage (URP) is suitable for

5082-2815

Contextual Info: HEWLETT-PACKARD. CUPNTS HEWLETT PACKARD 20E D B 44475fi4 OOQSt.37 SCHOTTKY BARRIER DIODES FOR GENERAL PURPOSE APPLICATIONS Features 0.41 D a 1N5711 1N5712 5082-2800/10/11/35 5082-2301 5082-2302 5082-2303 5082-2900 .016 0.36 (>014) LOW TURN-ON VOLTAGE: AS LOW AS

VARISTOR TNR 560

Abstract: 20E911K 20E431K 20E821K 20e221
Contextual Info: TNR E SERIES ● 20E Series Model Number TNR20E221K TNR20E241K TNR20E271K TNR20E391K TNR20E431K TNR20E471K TNR20E511K TNR20E681K TNR20E751K TNR20E821K TNR20E911K TNR20E102K TNR20E112K Maximum Applied Voltage ACrms V DC(V) 140 150 175 250 275 300 315 420

20E911K

Abstract: 511 VARISTOR
Contextual Info: TNR E SERIES ● 20E Series Model Number TNR20E221K TNR20E241K TNR20E271K TNR20E391K TNR20E431K TNR20E471K TNR20E511K TNR20E681K TNR20E751K TNR20E821K TNR20E911K TNR20E102K TNR20E112K Maximum Applied Voltage ACrms V DC(V) 140 150 175 250 275 300 315 420

5082-2815

Abstract: 5082-2970 5082-2805 5082-2813 5082-2308 5082-2804 diode+hp+2835+schottky 5082-2826 5082-2997 5082-2912
Contextual Info: HEWLETT-PACKARD i CMPNTS HEWLETT PACKARD 20E D E3 4 447584 OOOSfc.37 0 SCHOTTKY BARRIER DIODES FOR GENERAL PURPOSE APPLICATIONS Features 1N5711 1N5712 5082-2800/10/11/35 5082-2301 5082-2302 5082-2303 5082-2900 0,41 .016 0.36 (>014) LOW TURN-ON VOLTAGE: AS LOW AS

10 20e diode

Contextual Info: FRD Type：KCF60A20 F60A20E 20E •OUTLINE DRAWING 構造 ： 拡散型シリコンダイオード F R D Construction: Diffusion-type Silicon Diode 用途 ：高周波整流用 Application : High Frequency Rectification ■最大定格 / Maximum Ratings Rating

CD5383B

Abstract: COMPENSATED DEVICES INC cd5383 1N5333B CD5333B CD5336B CD5337B CD5338B CD5339B CD5340B
Contextual Info: COMPENSATED DEVICES INC 20E D • S3DSSSM GQGQ4Ï4 T T -II-O S' ZENER DIODE CHIPS CD5333B ALL JUNCTIONS COMPLETELY PROTECTED WITH SILICON DIOXIDE ELECTRICALLY EQUIVALENT TO 1N5333B THRU 1N5388B thru 5 W ATT CAPABILITY WITH PROPER HEAT SINKING CD5388B COMPATIBLE WITH ALL WIRE BONDING AND DIE ATTACH TECHNIQUES

CDLL4460

Abstract: COMPENSATED DEVICES INC melf ll41 CDLL4461 CDLL4462 CDLL4463 CDLL4464 CDLL4465 CDLL4467 CDLL4468
Contextual Info: I COMPENSATED DEVICES INC ' 20E D 53Q5SS4 QQGQ3QÔ T r - h-I s' • 1.5 WATT ZENER DIODE CDLL4460 • LEADLESS PACKAGE FOR SURFACE MOUNT thru • METALLURGICALLY BONDED C CDLL4496 • DOUBLE SLUG CONSTRUCTION MAXIMUM RATINGS -65°C to +175°C O p e ra tin g Tem perature:

Contextual Info: FRD Type：KCF60A20 F60A20E 20E •OUTLINE DRAWING 構造 ： 拡散型シリコンダイオード F R D Construction: Diffusion-type Silicon Diode 用途 ：高周波整流用 Application : High Frequency Rectification ■最大定格 / Maximum Ratings Rating

CDLL4460

Abstract: CDLL4461 CDLL4462 CDLL4463 CDLL4464 CDLL4465 CDLL4467 CDLL4468 CDLL4496
Contextual Info: I COMPENSATED DEVICES INC ' 20E D 53Q5SS4 QQGQ3QÔ T r - h-I s' • 1.5 WATT ZENER DIODE CDLL4460 • LEADLESS PACKAGE FOR SURFACE MOUNT thru • METALLURGICALLY BONDED C CDLL4496 • DOUBLE SLUG CONSTRUCTION MAXIMUM RATINGS -65°C to +175°C O p e ra tin g Tem perature:

Contextual Info: PERFORMANCE SEMICO NDU CTOR 20E D 70^55^7 Q00Ü5S3 2 P4C116/P4C116L ULTRA HIGH SPEED 2K x 8 STATIC CMOS RAMS SCRAMS A - :- FEATURES Full CMOS, 6T Cell • Single 5V±10% Power Supply High Speed (Equal Access and Cycle Times)

RUR15100

Abstract: RUR1590 RUR1580 diode rur15100 RUR1570
Contextual Info: / HARRIS SEMICOND SECTOR SbE D •■ , R U R 1 5 70 1580 1 U R 1 5 9 0 /1 5 1 0 0 fi HARRIS ■HAS 15A Ultrafast Diode With Soft Recovery Characteristic 4302271 004230b 20e! August 1991 o B '- n Features • Ultrafast with Soft Recovery Characteristic (trr < 100ns

DC 205

Contextual Info: 20 SEGMENT BAR GRAPH ARRAYS DC-20/20H DC-20/20E DC-20/20G DC-20/20Y DC-20/20SR Features Description •SUITABLE FOR LEVEL INDICATORS. The Bright Red source color devices are made with Gallium Phosphide Red Light Emitting Diode. •LO W CURRENT OPERATION. The Green source color devices are made with Gallium

Contextual Info: MOTOROLA Order this document by MTV32N20E/D SEMICONDUCTOR TECHNICAL DATA Advance Information M TV32N 20E TMOS E-FET Power Field Effect Transistor D3PAK for Surface Mount TMOS POWER FET 32 AMPERES 200 VOLTS RDS on = 0.075 OHM N-Channel Enhancement-Mode Silicon Gate