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    TO-251 footprint

    Abstract: SSM20G45EGJ SSM20G45 STROBE FLASHER USE IGBT SSM20G45EGH 20g45e
    Contextual Info: 20G45EGH/J N-channel Insulated-Gate Bipolar Transistor PRODUCT SUMMARY V CES 450V V CE sat 5V typ. I CP 130A DESCRIPTION The 20G45E acheives fast switching performance with low gate charge without a complex drive circuit. It is suitable for use in short-duration, high-current strobe


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    SSM20G45EGH/J SSM20G45E O-251 O-252 SSM20G45EGH O-252 SSM20G45EGJ O-251, TO-251 footprint SSM20G45 STROBE FLASHER USE IGBT 20g45e PDF