20S60 Search Results

20s60c3

Contextual Info: PowerMOSFET OUTLI NE 20S60C3 Uni tmm Package STO220 ロット記号 （例） Date code 600V20A 10.2 ④ 管理番号 （例） Control No. 00 00 13.2 品名略号 Type No. 20S60C3 Feat ur e 4.7 LowRON Fas tSwi t chi ng SMDPackage ①: G ②:D ③: S ④:D

siemens ecu

Abstract: siemens ecu 100 siemens ecu 64 ecu siemens 74ABT244
Contextual Info: SIEM EN S 1M x 64-Bit Dynamic RAM Module HYM 641010GS-60/-70 HYM 641020GS-60/-70 Prelim inary Inform ation • 1 048 576 words by 64-bit organization • Fast access and cycle time 60 ns access time 110 ns cycle time -60 version 70 ns access time 130 ns cycle time (-70 version)

relay 12vdc

Abstract: eagle signal control HD32A622 BR15A601 relay 6vdc 30D3CA12002 BR18A601 30E3CD02402 BR15A6 dynapar ht50 DA211A6
Contextual Info: 2005 Factory Automation & Feedback Controls Price List North America, Latin America & Asia Pacific Effective July 2, 2005 Revised 11/7/2005 Supersedes all previous issues • COUNTERS • TIMERS • PANEL METERS • TACHOMETERS and Other Devices Veeder-Root TM brand

96S-6043-0731-0

Abstract: 96S-6043 96S-6043-07-31-0
Contextual Info: DIN Styles Q & R Inverted 41612 6043 Series So c ke t Connector OUTLINE Style Half Q 2 R ow s o f 16 = 32 Positions .100 .100 2 .5 4 « , .2 ,5 4 .118 .118 .00 3.00 * T! I 3.00 ffliik jn f .052 •319 1.31 8.10 Style Third Q 2 Rows o f 10 = 20 Positions .236

20s60c3

Contextual Info: PowerMOSFET •外観図 20S60C3 OUTLI NE Package：STO220 10.2 ロット記号 （例） Date code ④ （例） 管理番号 Control No. 特 長 煙低オン抵抗 煙高速スイッチング 煙面実装タイプ 品名略号 Type No. 00 00 13.2 600V20A

AOB20S60

Contextual Info: 20S60/20S60/20S60 600V 20A α MOS TM General Description Product Summary The 20S60& 20S60 & 20S60 have been fabricated using the advanced αMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications.

Contextual Info: 20S60/20S60/20S60 600V 20A α MOS TM General Description Product Summary The 20S60& 20S60 & 20S60 have been TM fabricated using the advanced αMOS high voltage process that is designed to deliver high levels of performance and robustness in switching applications.

bcm 4330

Abstract: telemecanique contactor catalogue A5 GNC mosfet philips ecg master replacement guide Elektronikon II keltron electrolytic capacitors PART NO SELEMA DRIVER MOTOR AC 12v dc EIM Basic MK3 lenze 8600 Atlas copco rc universal 60 min
Contextual Info: NEED IT NOW? BUY REMAN! SEE PAGE lxx xx xvi SOLUTIONS, SOLUTIONS. Q A r e q u a l i t y, c o s t , a n d t i m e i m p o r t a n t to you? A ELECTRICAL SOUTH! Q Do you spend too much of your valuable time dealing with too m a n y d i ff e r e n t r e p a i r v e n d o r s ?

96P-6043-0731-0

Abstract: 1032PS
Contextual Info: DIN Styles Q & R Inverted 41612 Pin Connector 6043 Series OUTLINE Style Half Q 2 Rows of 16 = 32 Positions ✓A1 .012 0.30 ✓B1 .110 2.80 j-S 1 T T T .189 4.80 .098 2.50 .252 6.40 ‘ .244 6.20 Style Third Q 2 Rows of 10 = 20 Positions C-Press 4.80 .339

Contextual Info: SIEMENS 1 M X 36-Bit Dynamic RAM Module 2 M X 18-Bit Dynamic RAM Module HYM 361110/20S-60/-70/-80 Advanced Information • 1 048 576 words by 36-bit organization (alternative 2 097 152 words by 18-bit) • Fast access and cycle time 60 ns access time 110 ns cycle time (-60 version)

ERNI 024069

Abstract: DIN 41652 part 2 014-730 98317G-064-2MMF 6ES7972-0BA10-0XA0 erni 413864 erni 414575 354142 243-11020-15 ERNI 334415
Contextual Info: ERNI Electronics GmbH - Cross Reference AVX Part Number 208457032004025 ERNI Part Number 003260 Category Connectors Family 2.54 mm DIN 41612 / IEC 60603-2 Connectors Type Vertical Female Connectors: Type B/2 Product discontinued. Do not use the above part number anymore!

Contextual Info: DIN P.C. Board 6003 Series Hole Pattern O U TLIN E Series 6003 Pin Connectors Series 6003 Socket Connectors Contact Termination Code Winchester Electronics Code Termination Type N 2 Dip Solder 0 .0 6 3 /1 .6 0 3 Dip Solder 0 .0 3 5 / 0.90 5 Dip Solder 0 .0 3 5 / 0.90

AOTF20S60L

Abstract: AOTF20S60 AOB20S60L AOB20S60 20S60
Contextual Info: 20S60/20S60/20S60 600V 20A α MOS TM General Description Product Summary The 20S60& 20S60 & 20S60 have been fabricated using the advanced αMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications.

Contextual Info: SIEMENS 1M X 64-Bit Dynamic RAM Module HYM 641010GS-60/-70 HYM 641020GS-60/-70 Preliminary Information • 1 048 576 words by 64-bit organization • Fast access and cycle time 60 ns access time 110 ns cycle time -60 version 70 ns access time 130 ns cycle time (-70 version)

20s60c3

Abstract: DA QG
Contextual Info: PowerMOSFET •外観図 20S60C3 OUTLI NE Package：STO220 10.2 ロット記号 （例） Date code ④ （例） 管理番号 Control No. 特 長 煙低オン抵抗 煙高速スイッチング 煙面実装タイプ 品名略号 Type No. 00 00 13.2 600V20A

20S60

Abstract: AOTF20S60L AOB20S60L
Contextual Info: 20S60/20S60/20S60 600V 20A MOS Power Transistor General Description Product Summary The 20S60& 20S60 & 20S60 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC

DYNAMIC RAM CROSS REFERENCE

Abstract: DYNAMIC RAM dynamic ram module 5116800 hyb 511
Contextual Info: SIEM EN S Contents Contents Page Summary of Types incl. ordering codes . 9 Packing Inform

CAPACITORS 106 20g 124

Abstract: ADQ36
Contextual Info: SIEMENS 1M X 64-Bit Dynamic RAM Module HYM 641010GS-60/-70 HYM 641020GS-60/-70 Prelim inary Inform ation • 1 048 576 w ords by 64-bit organization • Fast access and cycle time 60 ns access time 110 ns cycle time -60 version 70 ns access time 130 ns cycle time (-70 version)

Contextual Info: SIEMENS 1 M x 36-Bit Dynamic RAM Module 2 M x 18-Bit Dynamic RAM Module HYM 361110/20S-60/-70/-80 Advanced Information • 1 048 576 words by 36-bit organization (alternative 2 097 152 words by 18-bit) • Fast access and cycle time 60 ns access time 110 ns cycle time (-60 version)

20S60

Contextual Info: SIEMENS 1 M X 32-Bit Dynamic RAM Module 2 M X 16-Bit Dynamic RAM Module HYM 321110/20S-60/-70/-80 Advanced Information • 1 048 576 words by 32-bit organization (alternative 2 097 152 words by 16-bit) • Fast access and cycle time 60 ns access time 110 ns cycle time (-60 version)

Contextual Info: 20S60/20S60/20S60 600V 20A α MOS TM General Description Product Summary The 20S60& 20S60 & 20S60 have been fabricated using the advanced αMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications.

Winchester

Abstract: hp 530 motherboard circuit and solution 6043S QR 540 coax cable 59n30 BD 3445 E 96P603307310 litton coax CONNECTOR 93HP15041A 96P603307319
Contextual Info: DIN 41612 Connector System Table Of Contents Series Description Page Specifications 1-4 DIN Styles D & E Standard 41612 6003 Series • Pin Connectors 5 DIN Styles D & E Standard 41612 6003 Series ■ Socket Connectors 6 DIN Styles B & C Standard 41612 6033 Series

74ABT244

Contextual Info: 1M x 64-Bit Dynamic RAM Module HYM 641010GS-60/-70 HYM 641020GS-60/-70 Preliminary Information • 1 048 576 words by 64-bit organization • Fast access and cycle time 60 ns access time 110 ns cycle time -60 version 70 ns access time 130 ns cycle time (-70 version)

Contextual Info: Advanced Power Electronics Corp. 20S60I-HF-3 N-channel Enhancement-mode Power MOSFET Fully isolated package D Simple Drive Requirement Fast Switching Performance G RoHS-compliant, halogen-free BV DSS 600V RDS ON 0.19Ω ID 20A S Description Advanced Power MOSFETs from APEC provide the designer with the best