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    2102-1 STATIC MEMORY Search Results

    2102-1 STATIC MEMORY Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2102-1N Rochester Electronics LLC 2102 - Standard SRAM, 1KX1, 500ns, MOS, PDIP16 Visit Rochester Electronics LLC Buy
    MD2114A-5 Rochester Electronics LLC SRAM Visit Rochester Electronics LLC Buy
    27S03ADM/B Rochester Electronics LLC 27S03A - SRAM Visit Rochester Electronics LLC Buy
    29705/BXA Rochester Electronics LLC 29705 - SRAM Visit Rochester Electronics LLC Buy
    29705APCB Rochester Electronics LLC 29705A - SRAM Visit Rochester Electronics LLC Buy

    2102-1 STATIC MEMORY Datasheets Context Search

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    Arm7 lpc2103 circuit diagram

    Abstract: motorola p030 2102 Static RAM ARM 9 philips 16C550 LPC2101 LPC2101FBD48 LPC2102FBD48 LPC2103FA44 LPC2103FBD48
    Text: LPC2101/2102/2103 Single-chip 16-bit/32-bit microcontrollers; 8 kB/16 kB/32 kB flash with ISP/IAP, fast ports and 10-bit ADC Rev. 01 — 18 January 2006 Preliminary data sheet 1. General description The LPC2101/2102/2103 microcontrollers are based on a 16-bit/32-bit ARM7TDMI-S


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    PDF LPC2101/2102/2103 16-bit/32-bit kB/16 kB/32 10-bit LPC2101/2102/2103 128-bit 32-bit 16-bit Arm7 lpc2103 circuit diagram motorola p030 2102 Static RAM ARM 9 philips 16C550 LPC2101 LPC2101FBD48 LPC2102FBD48 LPC2103FA44 LPC2103FBD48

    2102 SRAM

    Abstract: Arm7 lpc2103 circuit diagram ARM7TDMI-S external bus interface unit LPC2103 register 2102 RAM ARM processor pin configuration RAM 2102 tms 2102 SRAM 2103 datasheet amba ahb master slave sram controller
    Text: LPC2101/2102/2103 Single-chip 16-bit/32-bit microcontrollers; 8 kB/16 kB/32 kB flash with ISP/IAP, fast ports and 10-bit ADC Rev. 02 — 18 December 2007 Preliminary data sheet 1. General description The LPC2101/2102/2103 microcontrollers are based on a 16-bit/32-bit ARM7TDMI-S


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    PDF LPC2101/2102/2103 16-bit/32-bit kB/16 kB/32 10-bit LPC2101/2102/2103 128-bit 32-bit 16-bit 2102 SRAM Arm7 lpc2103 circuit diagram ARM7TDMI-S external bus interface unit LPC2103 register 2102 RAM ARM processor pin configuration RAM 2102 tms 2102 SRAM 2103 datasheet amba ahb master slave sram controller

    Arm7 lpc2103 circuit diagram

    Abstract: 2102 ram ARM LPC2103 ad0640
    Text: LPC2101/2102/2103 Single-chip 16-bit/32-bit microcontrollers; 8 kB/16 kB/32 kB flash with ISP/IAP, fast ports and 10-bit ADC Rev. 02 — 18 September 2007 Preliminary data sheet 1. General description The LPC2101/2102/2103 microcontrollers are based on a 16-bit/32-bit ARM7TDMI-S


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    PDF LPC2101/2102/2103 16-bit/32-bit kB/16 kB/32 10-bit LPC2101/2102/2103 128-bit 32-bit 16-bit Arm7 lpc2103 circuit diagram 2102 ram ARM LPC2103 ad0640

    16C550

    Abstract: LPC2101 LPC2101FBD48 LPC2102FBD48 LPC2103FA44 LPC2103FBD48 LQFP48 PLCC44 2102 Static RAM Arm7 lpc2103 circuit diagram
    Text: LPC2101/2102/2103 Single-chip 16-bit/32-bit microcontrollers; 8 kB/16 kB/32 kB flash with ISP/IAP, fast ports and 10-bit ADC Rev. 02 — 18 December 2007 Preliminary data sheet 1. General description The LPC2101/2102/2103 microcontrollers are based on a 16-bit/32-bit ARM7TDMI-S


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    PDF LPC2101/2102/2103 16-bit/32-bit kB/16 kB/32 10-bit LPC2101/2102/2103 128-bit 32-bit 16-bit 16C550 LPC2101 LPC2101FBD48 LPC2102FBD48 LPC2103FA44 LPC2103FBD48 LQFP48 PLCC44 2102 Static RAM Arm7 lpc2103 circuit diagram

    cabinet 2102

    Abstract: flowchart of bluetooth technology
    Text: AUTOMATIONWORX User Manual UM EN FL MOD IO AP Order No.: 2910473 Bluetooth Modbus Access Point AUTOMATIONWORX User Manual For Hardware and Software for the Bluetooth Modbus IO Access Point - FL BT MOD IO AP 06/2009 Designation: UM EN FL BT MOD IO AP Revision:


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    PDF

    EP3C120F780

    Abstract: CYCLONE3 IFFT EP3C120 EP3C25
    Text: Part of our Enhanced COTS PLD Initiative Cyclone III FPGAs advancing military and aerospace applications Cyclone III 65-nm FPGAs deliver 1/10th the static power of competing FPGAs and support waveform integration in under 0.2 W Altera Cyclone® III FPGAs are your unparalleled commercial off-the-shelf COTS solution for


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    PDF 65-nm 1/10th SS-01030-1 EP3C120F780 CYCLONE3 IFFT EP3C120 EP3C25

    USART 8251 interfacing with 8051 microcontroller

    Abstract: full 18*16 barrel shifter design 18*16 barrel shifter design USART 8251 USART 8251 expanded block diagram 8251 UNIVERSAL SYNCHRONOUS ASYNCHRONOUS RECEIVER P4QFP100-GH-1420 interfacing 8051 with ppi USART 8251 interfacing M8490 scsi
    Text: CLA90000 Series High Density CMOS Gate Arrays DS5500 ISSUE 2.0 INTRODUCTZarlinkION BENEFITS The CLA90000 family of gate arrays from Zarlink Semiconductor consists of 14 fixed-size arrays with the option of building optimized arrays with up to 1.1 million gates. This


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    PDF CLA90000 DS5500 USART 8251 interfacing with 8051 microcontroller full 18*16 barrel shifter design 18*16 barrel shifter design USART 8251 USART 8251 expanded block diagram 8251 UNIVERSAL SYNCHRONOUS ASYNCHRONOUS RECEIVER P4QFP100-GH-1420 interfacing 8051 with ppi USART 8251 interfacing M8490 scsi

    P2QFP100-GH-1420

    Abstract: O2-A2 CQFP44 USART 8251 interfacing with 8051 microcontroller CQFP100 microprocessors interface 8086 to 8251 full 18*16 barrel shifter design P4QFP100-GH-1420 CLA90000 transistors for oscillators
    Text: CLA90000 Series High Density CMOS Gate Arrays DS5500 ISSUE 2.0 INTRODUCTION BENEFITS The CLA90000 family of gate arrays from Zarlink Semiconductor consists of 14 fixed-size arrays with the option of building optimized arrays with up to 1.1 million gates. This


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    PDF CLA90000 DS5500 P2QFP100-GH-1420 O2-A2 CQFP44 USART 8251 interfacing with 8051 microcontroller CQFP100 microprocessors interface 8086 to 8251 full 18*16 barrel shifter design P4QFP100-GH-1420 transistors for oscillators

    microprocessors interface 8086 to 8251

    Abstract: USART 8251 interfacing with 8051 microcontroller to design a full 18*16 barrel shifter design USART 8251 18*16 barrel shifter design microprocessors architecture of 8251 USART 8251 expanded block diagram cqfp100 P2QFP100-GH-1420 full 18*16 barrel shifter design
    Text: CLA90000 SERIES HIGH DENSITY CMOS GATE ARRAYS DS4375 - 2.0 April 1997 INTRODUCTION BENEFITS The CLA90000 family of gate arrays from Mitel Semiconductor consists of 14 fixed-size arrays with the option of building optimized arrays with up to 1.1 million gates. This


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    PDF CLA90000 DS4375 microprocessors interface 8086 to 8251 USART 8251 interfacing with 8051 microcontroller to design a full 18*16 barrel shifter design USART 8251 18*16 barrel shifter design microprocessors architecture of 8251 USART 8251 expanded block diagram cqfp100 P2QFP100-GH-1420 full 18*16 barrel shifter design

    intel 2102 Static RAM

    Abstract: TMS4035 2102 Static RAM TMS4034 power must office 650 TMS4033 2102-2 RAM TMS403 TMS4030 TMS4035JL
    Text: MOS LSI TMS 4033 JL, NL; TMS 4034 JL, NL; TMS 4035 JL, NL 1024-WORD BY 1-81T STATIC RANDOM-ACCESS MEMORIES BULLETIN NO. DL-S 7512189, OCTOBER 1974-REVISED MAY 1975 • 1024 x 1-Bit Organization • Static Operation No Clocks, 16-PIN CERAMIC AND PLASTIC DUAL-IN-LiNE PACKAGES


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    PDF 1024-WORD 1-81T 1974-REVISED 16-PIN intel 2102 Static RAM TMS4035 2102 Static RAM TMS4034 power must office 650 TMS4033 2102-2 RAM TMS403 TMS4030 TMS4035JL

    circuit diagram of speech recognition

    Abstract: diode IN 5402 Handsfree full duplex ESP101 circuit diagram of speech recognition system voice recognition system Advanced Analog Technology circuit diagram of voice recognition telephone speech processor voice recognition control
    Text: ADSP-ESP101 CHIPSET EMBEDDED SPEECH PROCESSING SOLUTION DSP-Based Hands-free and Voice-Activated Dialing for Cellular Telephones KEY FEATURES: Hands-free and Speech-Recognition Software n Full-duplex Hands-free features —- 50 dB max echo cancellation —- 15 dB max noise cancellation


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    PDF ADSP-ESP101 20-word 32-word ADSP-2186 16-bit 100-lead ESP101 chips2-9106, H3409-15-9/98 circuit diagram of speech recognition diode IN 5402 Handsfree full duplex circuit diagram of speech recognition system voice recognition system Advanced Analog Technology circuit diagram of voice recognition telephone speech processor voice recognition control

    2102 Static RAM

    Abstract: 2102L2
    Text: Extended Temperature Range Supplement 2 1 0 2 / 2102L 1024 x 1 Static RAM MOS Memory Products Description The 2102 family consists of 1024-word by 1-bit static Random Access re a d /w rite Memories RAM that require a single 5 V supply, have fully TTL-compatible


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    PDF 2102L 1024-word 16-pin 2102L) 2102H 2102LH 2102F 2102LF 2102 Static RAM 2102L2

    2102-2 RAM

    Abstract: RAM 2102
    Text: 2 1 0 2 /2 1 0 2 L /2 1 L 0 2 1024 x 1 Static RAM MOS Memory Products Description The 2102 family consists of 1024-word by 1-bit static Random Access re a d /w rite Memories RAM that require a single 5 V supply, have fully TTL-compatible inputs and output, and require no clocking or refresh.


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    PDF 1024-word 2102L) 21L02) 2102L 21L02 16-pin 2102/2102L 2102-2 RAM RAM 2102

    SY2102

    Abstract: 2102-1 Static memory SYNERTEK 2102 2102A-6 500nSec YC210 2102 SYP2102A-4 2102A-2 2102A-4
    Text: 1024 x 1 Static Random Access Memory SY2102 MEMORY PRODUCTS S Tl ‘rt(‘k IN C O R P O R A T E D • Single +5 Volt Operation • Directly T T L Compatible • Standby Power Mode 3-State O u tp u ts'^ } Low Power Dissipation RAMs The 2102 family is a series of 1024 word by one bit


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    PDF SY2102 SY2102 2102-1 Static memory SYNERTEK 2102 2102A-6 500nSec YC210 2102 SYP2102A-4 2102A-2 2102A-4

    NP324

    Abstract: 4096-BIT block DIAGRAM OF random access memory "Random Access Memory"
    Text: MCM2149 M OTOROLA Product Preview MOS N C H A N N E L . S I L I C O N G A T E 4096-BIT STATIC RANDOM ACCESS MEMORY 4096-B IT STATIC RANDOM ACCESS MEMORY The M CM 2149 is a 4096-bit random access m em ory fabricate d using H M O S , high perform ance M O S te chnolo gy. For ease o f use, the device


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    PDF 4096-BIT MCM2149 18-pin MCM2148 MCM2149 NP324/11-80 NP324 block DIAGRAM OF random access memory "Random Access Memory"

    MM2102

    Abstract: MM2102A MM2102AJ MM2102AJ-2 MM2102AJ-2L MM2102AJ-4 MM2102AJ-4L MM2102AJ-6 MM2102AJ-6L MM2102AJ-L
    Text: n m o sram s MM2102A, MM2102AL Family 1024-Bit <1024 x 1 Static RAMs General Description The MM2102A family of high speed 1024 x 1-bit static random access read/write memories is manufactured usinsLN-channel depletion-mode silicon gate technology. Static storage ceils eliminate the need for clocks or


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    PDF MM2102A, MM2102AL 1024-Bit MM2102A MM2102A-4, MM2102-6 MM2102A-L, MM2102A-2L, MM2102 MM2102AJ MM2102AJ-2 MM2102AJ-2L MM2102AJ-4 MM2102AJ-4L MM2102AJ-6 MM2102AJ-6L MM2102AJ-L

    14 pin LCD samsung

    Abstract: 4 digit lcd display for watch SEG8-SEG11 KS57C2102
    Text: K S 5 7 C 2 102 ELECTRONICS Mi crocontroll er DESCRIPTION The K S57C 2102 single-chip 4-bit microcontroller is fabricated using an advanced C M O S process. W ith LCD direct-drive capability up to six digits , up to 12 pins for LCD segment data output, and a versatile 8-bit


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    PDF KS57C2102 KS57C2102 KS57C2102) stm42 14 pin LCD samsung 4 digit lcd display for watch SEG8-SEG11

    Untitled

    Abstract: No abstract text available
    Text: KS57C2102 Mi crocontroll er ELECTRONICS DESCRIPTION The KS57C2102 single-chip 4-bit microcontroller is fabricated using an advanced CMOS process. With LCD direct-drive capability up to six digits , up to 12 pins for LCD segment data output, and a versatile 8-bit


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    PDF KS57C2102 KS57C2102 DG32CH0 7Tb4142

    3539

    Abstract: 4725B 4710B 4720B F16K3 F16K4 F16K5 M40272 M40273 M40274
    Text: 4096x1 4096x1 - •n fO «i MOS 16,384x1 CO ro 1024x4 -fck M 40272 cn 4096x1 o> 4096x1 -4 16,384x1 Item S CD Ô o 3 a Description H > z o Access Time ns Max Cycle Time ns (Min) 2 > o o m CO Power Dissipation mW (Max) S 2 m 5 X o O CD 3 O) ro O) 03 oo 03


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    PDF 1024x4 F2114171 4096x1 M40272 M40273 M40274 M40275 3539 4725B 4710B 4720B F16K3 F16K4 F16K5

    ITT 2222 A

    Abstract: itt 2222
    Text: Si GEC P L E S S E Y APRIL 1997 S E M I C O N D U C T O R S CLA90000 SERIES HIGH DENSITY CMOS GATE ARRAYS INTRODUCTION BENEFITS The CLA90000 family of gate arrays from GEC Plessey Semiconductors GPS consists of 14 fixed-size arrays with the option of building optimized arrays with up to 1.1 million


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    PDF CLA90000 84-ACB-2828 144-ACB-4040 208-ACB-4545 209-ACB-4545 ITT 2222 A itt 2222

    P2QFP100-GH-1420

    Abstract: IR 1838 3v with 3 pins
    Text: S i GEC P L E S S E Y s i; M i c o n i i c; r o DECEMBER 1996 r s DS4375-2.0 CLA90000 SERIES HIGH DENSITY CMOS GATE ARRAYS INTRODUCTION BENEFITS The CLA90000 family of gate arrays from GEC Plessey Semiconductors GPS) consists of 14 fixed-size arrays with


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    PDF DS4375-2 CLA90000 144-ACB-4040 208-ACB-4545 209-ACB-4545 84-ACB-2828 P2QFP100-GH-1420 IR 1838 3v with 3 pins

    TL 1838

    Abstract: ITT 2222 A Mitel Semiconductor process flow to design a full 18*16 barrel shifter design pic 1840 ATS 16Mhz MITEL CLA full 18*16 barrel shifter design
    Text: CLA90000 SERIES j j j j ivilTEL HIGH DENSITY CMOS GATE ARRAYS s b m Sc o n â î c t o r DS4375 - 2.0 April 1997 INTRODUCTION BENEFITS The CLA90000 family of gate arrays from Mitel Sem icon­ ductor consists of 14 fixed-size arrays with the option of building optimized arrays with up to 1.1 million gates. This


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    PDF CLA90000 DS4375 84-ACB-2828 144-ACB-4040 208-ACB-4545 209-ACB-4545 TL 1838 ITT 2222 A Mitel Semiconductor process flow to design a full 18*16 barrel shifter design pic 1840 ATS 16Mhz MITEL CLA full 18*16 barrel shifter design

    Untitled

    Abstract: No abstract text available
    Text: m x EDI8C16512CA m ELECTRONIC DESIGN N C 512Kx16 Static Ram PRELIMINARY 512Kx16 CMOS, High Speed Static RAM Features The EDI8C16512CA, a high speed, high performance, 8 512Kx16 bit CMOS Static megabit density Static RAM organized as 512Kx16 bits, contains two 512Kx8 SRAMs.


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    PDF EDI8C16512CA 512Kx16 EDI8C16512CA, 512Kx8 EDI8C16512LPA55JM EDI8C16512CA20JM EDI8C16512CA20JI

    S22H10R

    Abstract: No abstract text available
    Text: S-22H10R/I 64-word x 4-bit parallel NON-VOLATILE RAM The S-22H10R/I is a non-volatile CMOS RAM, com posed of a CMOS static RAM and a non-volatile electrically erasable programmable memory E2PROM to backup the SRAM. The organization is 64-word x 4-bit (total 256 bits) and the


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    PDF S-22H10R/I 64-word S-22H10R/I X2210 S22H10R