2108 npn transistor
Abstract: 2108H crouzet 87 664
Text: 21/03/2012 www.crouzet.com CP2: 2108/2108H 2108 Part number 87610340 \ 8 or 6-figure display, height 7 mm \ Totalizer: - 7 kHz and 40 Hz inputs - Max. counting capacity 99,999,999 impulses Hour counter/chronometer: - Start/stop/ inputs - 4 time ranges: 99,999.9 hours - 99,999.9 min
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2108/2108H
2108H)
2108H
2108 npn transistor
2108H
crouzet 87 664
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2108H
Abstract: 2108 npn transistor iec 255-4 831 transistor 2108 counter cp2 C 829 transistor
Text: Totalizers, LCD, 24 x 48 Operating characteristics ● 87 610 340 1 87 610 440 2 Display 87 610 340 2108 87 610 440 (2108H) CP2 ● CP2 R 2 R This dot indicates capacity overload Terminal markings and connections 2108 Terminals : 1 - Reset input 2 - Enable Reset
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2108H)
2108H
2108/2108H
2108H
2108 npn transistor
iec 255-4
831 transistor
2108
counter cp2
C 829 transistor
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crouzet millenium 1 front panel program
Abstract: crouzet millenium 2 PROGRAMMING Crouzet Millenium 2 millenium 3 crouzet crouzet millenium 1 2108H millenium 2 crouzet crouzet millenium 3 PROGRAMMING 89750101 Crouzet Millenium
Text: Crouzet Counters, Controllers and Proximity Sensors 4141 Series Counters Millenium Micro Controller Simulation of program with PC software. Standard application programs available on the Crouzet website at www.crouzet.com. c c c c Program Protection by 4 Digit Password
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2108 npn transistor
Abstract: No abstract text available
Text: COUNT/RATE COUNT/RATE 2108 SERIES TOTALIZING COUNTER • 8 Digit 7mm High LCD Display • Replaceable Lithium Battery - 8 Year Life • Compact Size 24 x 48mm .95˝ x 1.89˝ Front Panel 37.5mm (1.48˝) Depth C UL US LISTED GENERAL FEATURES: WIRING: The 2108 Series is a totalizing counter housed in a DIN-sized (24 x 48mm)
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2108H
Abstract: 2108 npn transistor 2108-h
Text: COUNT/RATE COUNT/RATE 2108H SERIES ELAPSED TIME INDICATOR • 6 Digit .3˝ High LCD Display • 4 Selectable Time Ranges – Hours, 1/10 Hours – Minutes, 1/10 Minutes – Seconds, 1/10 Seconds – Hours, Minutes, Seconds C UL US LISTED GENERAL FEATURES:
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2108H
2108 npn transistor
2108-h
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Untitled
Abstract: No abstract text available
Text: ^£.mi- 2onauctoi l/~\ One. £07 TELEPHONE: (973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. BUV20 NPN MULTI - EPITAXIAL POWER TRANSISTOR FEATURES • HIGH CURRENT • FAST SWITCHING • HIGH RELIABILITY APPLICATIONS
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BUV20
100ii)
530REF
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thermistor 10 SP
Abstract: 275-217 Diode 1N40 12 volt relay SPDT relay 12 Volt 1N4001 RELAY 47K variable resistor Q1 2N3904 276-007 2N3904
Text: www.thermistor.com Temperature Controller POWER SUP PLY R1 47K RT1 TIVE POSI U1A 1 3 + 2 C1 FD M 2N3904 typ 10 ical 1 Meg ITIVE R4 PSE OLECT VALU WER E PLY 2 K1 5 WE PO PLY UP RS C10MFD 1 DT ER 2 R 1 TO RT MIS ER TH 3 + - EN OP ED OS CL 8 8 4 4 1 2 3 N O MM
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2N3904
2N3904.
LM741CN.
thermistor 10 SP
275-217
Diode 1N40
12 volt relay
SPDT relay 12 Volt
1N4001 RELAY
47K variable resistor
Q1 2N3904
276-007
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2108 npn transistor
Abstract: TRANSISTOR D 471 2PC945P
Text: DISCRETE SEMICONDUCTORS DATA SHEET ndbook, halfpage M3D186 2PC945 NPN general purpose transistor Product specification Supersedes data of 1997 Mar 26 1999 May 28 Philips Semiconductors Product specification NPN general purpose transistor 2PC945 FEATURES PINNING
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M3D186
2PC945
2PA733.
MAM259
115002/03/pp8
2108 npn transistor
TRANSISTOR D 471
2PC945P
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D187 2PD1820A NPN general purpose transistor Product specification Supersedes data of 1997 May 22 1999 Apr 12 Philips Semiconductors Product specification NPN general purpose transistor 2PD1820A FEATURES
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M3D187
2PD1820A
SC-70;
OT323
2PB1219A.
SCA63
115002/00/02/pp8
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2108 npn transistor
Abstract: 2PC1815 TRANSISTOR D 471
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 2PC1815 NPN general purpose transistor Product specification Supersedes data of 1997 Mar 28 1999 May 28 Philips Semiconductors Product specification NPN general purpose transistor 2PC1815 PINNING FEATURES
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M3D186
2PC1815
2PA1015.
MAM259
115002/03/pp8
2108 npn transistor
2PC1815
TRANSISTOR D 471
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bc517
Abstract: StR 40000 or transistor transistor BC517
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BC517 NPN Darlington transistor Product specification Supersedes data of 1997 Apr 23 1999 Apr 23 Philips Semiconductors Product specification NPN Darlington transistor BC517 FEATURES PINNING • High current max. 500 mA
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M3D186
BC517
BC516.
MAM302
SCA63
115002/00/04/pp8
bc517
StR 40000 or transistor
transistor BC517
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marking code IC .ztz
Abstract: ZtZ MARKING PUMX1 marking ztz sot363
Text: DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage MBD128 PUMX1 NPN general purpose double transistor Preliminary specification Supersedes data of 1997 Jul 09 1999 Apr 14 Philips Semiconductors Preliminary specification NPN general purpose double transistor
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MBD128
SC-88
SCA63
115002/00/03/pp8
marking code IC .ztz
ZtZ MARKING
PUMX1
marking ztz sot363
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BF585
Abstract: BF587 BF588 BP317 sot128b
Text: DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D067 BF585; BF587 NPN high-voltage transistors Product specification Supersedes data of 1996 Dec 09 1999 Apr 21 Philips Semiconductors Product specification NPN high-voltage transistors BF585; BF587 FEATURES
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M3D067
BF585;
BF587
O-202;
OT128B
BF588.
MBH793
BF585
BF587
BF588
BP317
sot128b
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str 6707
Abstract: philips 23 2108 npn transistor ic str 6707 TO-202 transistor NPN BF859 BP317 D-20097 transistor d 2333 philips ltd 202
Text: DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D067 BF859 NPN high-voltage transistor Product specification Supersedes data of 1996 Dec 09 1999 Apr 14 Philips Semiconductors Product specification NPN high-voltage transistor BF859 DESCRIPTION NPN transistor in a TO-202 plastic package.
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M3D067
BF859
O-202
MBH794
O-202)
SCA63
115002/00/03/pp8
str 6707
philips 23
2108 npn transistor
ic str 6707
TO-202 transistor NPN
BF859
BP317
D-20097
transistor d 2333
philips ltd 202
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BFV469
Abstract: transistor NPN 3474 BP317
Text: DISCRETE SEMICONDUCTORS DATA SHEET alfpage M3D100 BFV469 NPN high-voltage transistor Product specification Supersedes data of 1997 Jun 20 1999 Apr 26 Philips Semiconductors Product specification NPN high-voltage transistor BFV469 FEATURES PINNING • High transition frequency
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M3D100
BFV469
O-126;
MAM254
SCA63
115002/00/02/pp8
BFV469
transistor NPN 3474
BP317
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Bf240
Abstract: transistor d 2333 2108 npn transistor Transistor B 886 NPN C 5344 transistor NPN 3474 str 6707 BF240 philips
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BF240 NPN medium frequency transistor Product specification Supersedes data of 1998 Dec 02 1999 Apr 21 Philips Semiconductors Product specification NPN medium frequency transistor BF240 FEATURES PINNING
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M3D186
BF240
MAM258
SCA63
115002/00/04/pp8
Bf240
transistor d 2333
2108 npn transistor
Transistor B 886
NPN C 5344
transistor NPN 3474
str 6707
BF240 philips
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BP317
Abstract: PMSTA42 PMSTA43 PMSTA92 PMSTA93
Text: DISCRETE SEMICONDUCTORS DATA SHEET k, halfpage M3D187 PMSTA42; PMSTA43 NPN high-voltage transistors Product specification Supersedes data of 1997 Jun 19 1999 May 21 Philips Semiconductors Product specification NPN high-voltage transistors PMSTA42; PMSTA43
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M3D187
PMSTA42;
PMSTA43
OT323
PMSTA92
PMSTA93.
PMSTA42
BP317
PMSTA42
PMSTA43
PMSTA93
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ED-1502C
Abstract: ED1502 ED1502C ED1502D ED1502E npn general purpose transistors application BP317 ED1502B
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 ED1502 NPN general purpose transistor Product specification Supersedes data of 1997 May 01 1999 Apr 27 Philips Semiconductors Product specification NPN general purpose transistor ED1502 FEATURES PINNING
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M3D186
ED1502
MAM182
SCA63
115002/00/02/pp8
ED-1502C
ED1502
ED1502C
ED1502D
ED1502E
npn general purpose transistors application
BP317
ED1502B
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Untitled
Abstract: No abstract text available
Text: NPN EPITAXIAL SILICON TRANSISTOR KSR1108 SWITCHING APPLICATION Bias Resistor Built In • Sw itching circuit, Inverter, Interface circuit, D river C ircuit • Built in bias R esistor (R i =A1KQ., R2=22K£i) • C om plem ent to K S R 2108 ABSOLUTE MAXIMUM RATINGS (TA=25°C)
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KSR1108
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BFW92
Abstract: TRANSISTOR BFW 11 SQP5 2N6621 349 2110 Q62702-F321 Q68000-A4669 QQG4733 6621 transistor bfw 90
Text: BSC D • Û235b05 0004731 7 « S I E G NPN Silicon RF Broadband Transistors T c rc\ t -» - SIEMENS AKTIENÛESELLSCHAF T - H 't r BFW 92 2 N 6621 BFW 9 2 is an epitaxial NPN silicon planar RF transistor in a plastic package similar to TO 119 50 B 3 DIN 41 86 7 ; intended for use as RF amplifier up to the GHz range,
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6535bQ5
2N6621.
Q62702-F321
Q68000-A4669
temperatu077
QQG4733
BFW92
BFW92
TRANSISTOR BFW 11
SQP5
2N6621
349 2110
Q68000-A4669
6621
transistor bfw 90
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Untitled
Abstract: No abstract text available
Text: 2SC1923 SEMICONDUCTOR forward international b u c t r q n k s ltd . TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY AMPLIFIER APPLICATIONS, FM,RF,M3XJF AMPLIFIER APPLICATIONS. Package: TO-92 * Small Reverse Transfer Capacitance:Cr^=0,7pF TYP,
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2SC1923
100MHZ)
100uA
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K1118
Abstract: MJ3029 transistor k 1119 transistor K 3532 d 1669 transistor MJ2955 300 watts amplifier MJ2955A he01 Ic as20
Text: M Q T O R C L A SC XSTRS/R F 12E D | b3 b 7 E 5 4 0084*177 3 | M J2955 — MOTOROLA S e e P g r 3 -6 M J2955A — SEMICONDUCTOR See P g .3 -9 TECHNICAL DATA MJ3029 NPN SILICON HIGH-VOLTAGE TRANSISTOR 5 AMPERE POWER TRANSISTOR NPN SILICON . . . designed for T V horizontal and vertical deflection amplifier
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b3b725M
MJ2955-
MJ2955A
MJ3029
K1118
MJ3029
transistor k 1119
transistor K 3532
d 1669 transistor
MJ2955 300 watts amplifier
MJ2955A
he01
Ic as20
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gd 361 transistor
Abstract: MOTOROLA 2N3902 2N3902
Text: MOTOROLA SC X S T R S /R F 15E D | b3b?2S4 QOñ45Q5 b | T - MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN 2N3902 3.5 AMPERE HIGH VOLTAGE NPN SILICON TRANSISTORS POWER TRANSISTORS NPN SILICON . . . designed for use in high-voltage inverters, converters, switching
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2N3902
gd 361 transistor
MOTOROLA 2N3902
2N3902
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BCP53T1 PNP Silicon E pitaxial Transistor Motorol« Pr*f*rr*d D*vlca This PNP Silicon Epitaxial transistor is designed for use in audio amplifier applications. The device is housed in the SOT-223 package which is designed
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OT-223
BCP56
BCP53T1
BCP53T1
inch/1000
BCP53T3
inch/4000
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