2133M Search Results

ddr3

Contextual Info: Memory Module Specifications KHX2133C10D3T1K2/8GX 8GB 4GB 512M x 64-Bit x 2 pcs. DDR3-2133MHz CL10 240-Pin DIMM Kit SPECIFICATIONS CL(IDD) d ye Ke d ye Ke d ye Ke 9 cycles Row Cycle Time (tRCmin) 49.5ns (min.) Refresh to Active/Refresh Command Time (tRFCmin)

Contextual Info: PI2DDR3212 1.35V/ 1.5V/1.8V 14 bit 2:1 DDR3/DDR4 Switch Features Description ÎÎ14 bit 2:1 switch that supports DDR3 800 2133Mbps, DDR4 This 14-bit DDR3/DDR4 switch is designed for 1.35V/ 1.5V/ 1.8V supply voltage, POD_12, SSTL_135, SSTL_15 or SSTL_18 signaling and CMOS select input signals. It is designed for

E1751E20

Abstract: EDJ2108DEBG ELPIDA DDR3 2G DDR3 2G 1866 elpida EDJ2108DEBG-MQ DDR3-2133L
Contextual Info: PRELIMINARY DATA SHEET 2G bits DDR3 SDRAM EDJ2108DEBG-MQ 256M words  8 bits, 2133Mbps EDJ2116DEBG-MQ (128M words  16 bits, 2133Mbps) EDJ2108DEBG-JQ (256M words  8 bits, 1866Mbps) EDJ2116DEBG-JQ (128M words  16 bits, 1866Mbps) Specifications Features

ddr3

Contextual Info: Memory Module Specifications KHX2133C9BD3T1K2/4GX 4GB 2GB 256M x 64-Bit x 2 pcs. DDR3-2133MHz CL9 240-Pin DIMM Kit SPECIFICATIONS CL(IDD) d ye Ke d ye Ke d ye Ke 9 cycles Row Cycle Time (tRCmin) 49.5ns (min.) Refresh to Active/Refresh Command Time (tRFCmin)

Contextual Info: PI2DDR3212 1.35V/ 1.5V/1.8V 14 bit 2:1 DDR3/DDR4 Switch Features Description ÎÎ14 bit 2:1 switch that supports DDR3 800 2133Mbps, DDR4 This 14-bit DDR3/DDR4 switch is designed for 1.35V/ 1.5V/ 1.8V supply voltage, POD_12, SSTL_135, SSTL_15 or SSTL_18 signaling and CMOS select input signals. It is designed for

k4b2g1646q

Abstract: ddr3 2133 K4B2G1646Q-BCK0 K4B2G1646Q-BCMA
Contextual Info: Rev. 1.03, Mar. 2014 K4B2G1646Q 2Gb Q-die DDR3 SDRAM Only x16 96FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed

Contextual Info: IS43/46TR16640B, IS43/46TR16640BL IS43/46TR81280B, IS43/46TR81280BL 128MX8, 64MX16 1Gb DDR3 SDRAM NOVEMBER 2014 FEATURES • Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V  Low Voltage L : VDD and VDDQ = 1.35V + 0.1V, -0.067V  Refresh Interval: 7.8 us (8192 cycles/64 ms) Tc= -40°C to 85°C

Contextual Info: Priliminary 288pin DDR4 SDRAM Registered DIMM DDR4 SDRAM Registered DIMM Based on 4Gb M-die HMA451R7MFR8N HMA41GR7MFR4N HMA42GR7MFR4N *SK hynix reserves the right to change products or specifications without notice. Rev. 0.01 /Jun. 2013 1 Priliminary Revision History

Contextual Info: Agilent U7231B DDR3 and LPDDR3 Compliance Test Application for Infiniium Series Oscilloscopes Datasheet Test, debug and characterize your DDR3 and LPDDR3 designs quickly and easily The Agilent Technologies U7231B DDR3 and LPDDR3 compliance test application provides a fast and easy

NT5CB64M16DP

Abstract: nt5cb64m16 DDR3-2133-CL13 DDR3 pin out NT5CB64M16D NT5CB64m
Contextual Info: NT5CB128M8DN/NT5CB64M16DP NT5CC128M8DN/NT5CC64M16DP 1Gb DDR3 D-die SDRAM Feature Table 1: CAS Latency Frequency Speed Bins Parameter -BE* -CF/CFI* -DH/DHI* -EI* -FK* DDR3/L-1066-CL7 (DDR3/L-1333-CL8) (DDR3/L-1600-CL10) (DDR3-1866-CL11) (DDR3-2133-CL13) Units

Contextual Info: 2Gb DDR3 SDRAM F-Die NT5CB256M8FN/NT5CB128M16FP NT5CC256M8FN/NT5CC128M16FP Feature CAS Latency Frequency Speed Bins -DI/DII* -EJ*/EJI* -FK* DDR3 L -1600 DDR3-1866 DDR3-2133 CL11 CL12 CL13 Units Parameter Min. Max. Min. Max. Min. Max. tCK(Avg.) Clock Frequency

Contextual Info: THICK FILM CHIP RESISTORS HPL SERIES LOW RESISTANCE, LOW TCR, HIGH POWER • Features ‧Suitable for lead free soldering. ‧Compatible with flow and reflow soldering ■ Applications ‧Consumer Electronics ‧SMPS, M/B ‧Portable Device ‧Measurement instrument

K4B2G1646C-HCH9

Abstract: K4B2G1646C K4B2G1646C-HCK0 K4B2G1646C-HC K4B2G1646C-HCK 128mx16 ddr3 k4B2G1646 K4B2G16 K4B2G1646C-HCNB DDR3-2133
Contextual Info: Rev. 1.11, Nov. 2010 K4B2G1646C 2Gb C-die DDR3 SDRAM Only x16 96FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed

NT5CB128m16FP

Abstract: nt5cb256m8fn NT5CB128M16FP-DI NT5CB128M16FP-EK NT5CC128M16FP-DI NT5CC256M8FN-DI NT5CC128M16FP NT5CC256M8FN-DII NT5CB256M8FN-FL NT5CB256M8F
Contextual Info: 2Gb DDR3 SDRAM F-Die NT5CB256M8FN / NT5CB128M16FP NT5CC256M8FN / NT5CC128M16FP Feature   Programmable Burst Length: 4, 8  8n-bit prefetch architecture  Output Driver Impedance Control Backward compatible to VDD= VDDQ= 1.5V  Differential bidirectional data strobe

2310 dhi

Abstract: NT5CB64M16DP nt5cb64m16 NT5CB128 DDR3 pin out NT5CB64M16D NT5CB128M8DN-CF NT5CB64M16dpcf CL-14
Contextual Info: 1Gb DDR3 SDRAM NT5CB128M8DN / NT5CB64M16DP NT5CC128M8DN / NT5CC64M16DP Feature Table 1: CAS Latency Frequency Speed Bins Parameter -BE* -CF/CFI* -DH/DHI* -EJ* -FK* DDR3/L-1066 DDR3/L-1333 DDR3/L-1600 DDR3-1866 DDR3-2133 CL7 CL8 CL10 CL12 CL13 Units Min. Max.

NT5CB128M16FP

Abstract: NT5CB128M16FP-DI NT5CC128M16FP-DI NT5CB128M NT5CB128M16FP-DII NT5CC256M8FN
Contextual Info: 2Gb DDR3 SDRAM F-Die NT5CB256M8FN/NT5CB128M16FP NT5CC256M8FN/NT5CC128M16FP Feature CAS Latency Frequency Speed Bins -DI/DII* -EJ/EJI* -FK* DDR3 L -1600 DDR3-1866 DDR3-2133 CL11 CL12 CL13 Units Parameter Min. Max. Min. Max. Min. Max. tCK(Avg.) Clock Frequency

K4B2G1646Q-BCK0

Abstract: K4B2G1646q
Contextual Info: Rev. 1.0, Aug. 2013 K4B2G1646Q 2Gb Q-die DDR3 SDRAM Only x16 96FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed

k4b1g1646g-bck0

Abstract: K4B1G1646G-BCH9 K4B1G1646G K4B1G1646G-BCF8 K4B1G1646G-BCNB K4B1G1646G 1600 K4B1G1646GBCH9 K4B1G16 470 ohm resistance DDR3-2133
Contextual Info: Rev. 1.0, Nov. 2010 K4B1G1646G 1Gb G-die DDR3 SDRAM x16 only 96FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed

Contextual Info: Product Nomenclature Guide: ZEÊÛđ½ƒãçٛ Logic Devices Incorporated Product Type 9D = DDR 2 = DDR2 3 = DDR3 Words 32M = 32 MB 64M = 64 MB 128M = 128 MB 256M = 256 MB 512M = 512 MB 1G = 1024 MB Wordwidth 32 = x32 64 = x64 72 = x72 80 = x80 S = Single Channel

free circuit diagram of motherboard

Abstract: DDR3 socket datasheet DDR3 DIMM SPD JEDEC ddr3 ram CM3X1G2133C9D DDR3 socket DDR3 DIMM SPD DDR3 jedec motherboard PCB diagram circuit diagram of motherboard
Contextual Info: TW3X2G2133C9DF The Dominator Series TW3X2G2133C9DF is a 2048MByte kit of DDR3 SDRAM DIMMs built using Corsair’s latest high performance heat sink with Dual-path Heat Xchange DHX technology coupled with a Corsair Airflow Fan. This part delivers outstanding performance in the latest generation of dual-channel DDR3-based motherboards. It

GDDR5

Abstract: 96FBGA POD-15 SSTL-15 96-FBGA 170FBGA GDDR3 SDRAM 256Mb 170-FBGA 100-FBGA 136FBGA
Contextual Info: Jul.2010 Graphics Code Information Component K4XXXXXXXX - XXXXXXX 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 1. Memory K 11. "─“ 2. DRAM : 4 12. Package - gDDR2 H : 84FBGA (Halogen Free & Lead Free) B : 84FBGA (Halogen Free & Lead Free & Flip Chip)

k4g10325fe-hc04

Abstract: samsung gddr5 GDDR5 K4G10325FE K4W2G1646C K4G20325FC k4w2g1646 POD-15 K4W1G1646E gddr5 samsung
Contextual Info: Jul. 2010 Graphic Memory Product Guide SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed herein is provided on an "AS IS" basis, without warranties of any kind.

Contextual Info: THICK FILM CHIP RESISTORS HPL SERIES LOW RESISTANCE, LOW TCR, HIGH POWER • Features ‧Suitable for lead free soldering. ‧Compatible with flow and reflow soldering ■ Applications ‧Consumer Electronics ‧SMPS, M/B ‧Portable Device ‧Measurement instrument

Contextual Info: 4Gb DDR4 SDRAM 4Gb DDR4 SDRAM Lead-Free&Halogen-Free RoHS Compliant H5AN4G4NMFR-xx H5AN4G8NMFR-xxC H5AN4G6NMFR-xxC * SK hynix reserves the right to change products or specifications without notice. Rev. 0.1 / Mar. 2013 1 Revision History Revision No. History