2166D Search Results

smd diode 1d

Abstract: diode smd 1D 3361d 2-13-1D 2-13-1W 2-16-6D 2-16-6W 3-16-1D 3-16-1W 3-36-1D
Contextual Info: -1J 4-4 *R oH S CO M PL IA NT Features • Fully encapsulated ■ 6 pin DIP and SMD ■ Low profile ■ Lead free ■ Low insertion loss ■ RoHS compliant* ■ Frequency range 10 kHz to 500 MHz ■ Impedance levels from 12.5 Ω to 800 Ω nominal 50 Ω

Contextual Info: 4-4 *R oH S CO M PL IA NT Features -1J • Fully encapsulated ■ 6 pin DIP and SMD ■ Low profile ■ Lead free ■ Low insertion loss ■ RoHS compliant* ■ Frequency range 10 kHz to 500 MHz ■ Impedance levels from 12.5 Ω to 800 Ω nominal 50 Ω

Contextual Info: -1J 4-4 *R oH S CO M PL IA NT Features • Fully encapsulated ■ 6 pin DIP and SMD ■ Low profile ■ Lead free ■ Low insertion loss ■ RoHS compliant* ■ Frequency range 10 kHz to 500 MHz ■ Impedance levels from 12.5 Ω to 800 Ω nominal 50 Ω

Contextual Info: -1J 4-4 *R oH S CO M PL IA NT Features • Fully encapsulated ■ 6 pin DIP and SMD ■ Low profile ■ Lead free ■ Low insertion loss ■ RoHS compliant* ■ Frequency range 10 kHz to 500 MHz ■ Impedance levels from 12.5 Ω to 800 Ω nominal 50 Ω

Contextual Info: WIDEBAND RF TRANSFORMERS THROUGH-HOLE AND SMD • Fully encapsulated ■ Low profile ■ 6 pin DIP and SMD ■ Low insertion loss ■ Frequency range 10 kHz to 500 MHz ■ Impedance levels from 12.5 ft to 800 ft nominal 50 ft RF2, RF3, RF4 Series Bourns Wideband RF Transformers

4151d

Abstract: 3361d 4-1-6J 416W diode 6d 50 2-13-1D 2-13-1J 2-13-1W 2-16-6D 2-16-6W
Contextual Info: March 27, 2006 Wideband RF Transformers Features z z z z z Designed for use in wideband RF applications Frequency range 10kHz to 500MHz Low insertion loss Impedance levels from 12.5 Ohms to 800 Ohms nominal 50 Ohms 6 pin DIP and SMT packages ELECTRICAL SPECIFICATIONS AT 25ºC

diode smd 1D

Abstract: 3-36-1D 4151D 1D smd transistor 2-13-1D 2-13-1J 2-13-1W 2-16-6D 2-16-6W 3-16-1D
Contextual Info: -1J 4-4 Features • Fully encapsulated ■ Low profile ■ Low insertion loss ■ Frequency range 10 kHz to 500 MHz ■ Impedance levels from 12.5 Ω to 800 Ω nominal 50 Ω ■ 6 pin DIP and SMD RF2, RF3, RF4 Series - Wideband Transformers Electrical Specifications @ 25°C

Contextual Info: oH V SC AV ER OM AI SIO PL LA N IA BL S NT E -1J 4-4 *R Features • Fully encapsulated ■ 6 pin DIP and SMD ■ Low profile ■ Lead free version available see How to Order ■ Low insertion loss ■ Frequency range 10 kHz to 500 MHz ■ Lead free versions are RoHS compliant*

wideband rf

Contextual Info: August 6, 2010 Wideband RF Transformers Features       Designed for use in wideband RF applications Frequency range 10kHz to 500MHz Low insertion loss Impedance levels from 12.5 Ohms to 800 Ohms nominal 50 Ohms Operating Temperature: -40°C to +85°C

Contextual Info: T PL IA N M • Fully encapsulated CO ■ Low profile ■ Low insertion loss -1J 4-4 *R oH S These series are obsolete and not recommended for new designs. Features ■ RoHS compliant* ■ Frequency range 10 kHz to 500 MHz ■ Impedance levels from 12.5 Ω to 800 Ω

Contextual Info: August 6, 2010 Wideband RF Transformers Features       Designed for use in wideband RF applications Frequency range 10kHz to 500MHz Low insertion loss Impedance levels from 12.5 Ohms to 800 Ohms nominal 50 Ohms Operating Temperature: -40°C to +85°C

LM-NP

Abstract: SRR0604-3R3M LM-NP-1001-B 3361d BS 6305 2-1-6J FSR1013 CM453232-100K inductor 100uH LM-lP-1001
Contextual Info: w w w . b o u r n s . c o m Inductive Components I. Product Selection II. Line Matching Models LM-NP/LP-1000 Series .156 SM-LP-5001

2-13-1D

Abstract: 2-13-1W 2-16-6D 2-16-6W 3-16-1D 3-16-1W 3-36-1D 3-36-1W 4-25-1D 4-25-1W
Contextual Info: -1J 4-4 *R oH S CO M PL IA NT Features • Fully encapsulated ■ 6 pin DIP and SMD ■ Low profile ■ Lead free ■ Low insertion loss ■ RoHS compliant* ■ Frequency range 10 kHz to 500 MHz ■ Impedance levels from 12.5 Ω to 800 Ω nominal 50 Ω

Contextual Info: PL IA N T Features M CO • Low profile ■ Low insertion loss -1J 4-4 *R oH S ■ RoHS compliant* ■ Fully encapsulated ■ Frequency range 10 kHz to 500 MHz ■ Impedance levels from 12.5 Ω to 800 Ω nominal 50 Ω ■ 6 pin DIP and SMD RF2, RF3, RF4 Series - Wideband Transformers

TSX83102G0BGL

Abstract: TS83102 diode zener B16 JTSX83102G0-1V1B MC100EL16 RO4003 TS83102G0B TS83102G0BCGL FR4 epoxy dielectric constant 4.4 diode 930 b14
Contextual Info: ADC 10-bit 2 Gsps Evaluation Board - TSEV83102G0B . User Guide Table of Contents Section 1 Overview . 1-1

416W

Contextual Info: PL IA NT Features CO M • Low profile ■ Low insertion loss -1J 4-4 *R oH S ■ RoHS compliant* ■ Fully encapsulated ■ Frequency range 10 kHz to 500 MHz ■ Impedance levels from 12.5 Ω to 800 Ω nominal 50 Ω ■ 6 pin DIP and SMD RF2, RF3, RF4 Series - Wideband Transformers

Contextual Info: May 13, 2009 Wideband RF Transformers Features       Designed for use in wideband RF applications Frequency range 10kHz to 500MHz Low insertion loss Impedance levels from 12.5 Ohms to 800 Ohms nominal 50 Ohms Operating Temperature: -40°C to +85°C