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    pcb warpage in ipc standard

    Abstract: JEDEC J-STD-033A J-STD-033A LGA rework JSTD033A reflow profile FOR LGA COMPONENTS AN1028 8015 j AN-1028 AN-1029
    Text: Application Note AN-1028 Recommended Design, Integration and Rework Guidelines for International Rectifier’s BGA and LGA Packages by Kevin Hu, International Rectifier Table of Contents Page Introduction .1


    Original     		PDF AN-1028 AN-1029. pcb warpage in ipc standard JEDEC J-STD-033A J-STD-033A LGA rework JSTD033A reflow profile FOR LGA COMPONENTS AN1028 8015 j AN-1028 AN-1029

    H01N45A

    Abstract: No abstract text available
    Text: HI-SINCERITY Spec. No. : MOS200408 Issued Date : 2004.11.01 Revised Date : 2005.03.10 Page No. : 1/4 MICROELECTRONICS CORP. H01N45A H01N45A Pin Assignment 3-Lead Plastic TO-92 Package Code: A Pin 1: Gate Pin 2: Drain Pin 3: Source N-Channel Power Field Effect Transistor


    Original     		PDF MOS200408 H01N45A H01N45A 183oC 217oC 260oC

    Untitled

    Abstract: No abstract text available
    Text: SMD MOLDED WOUND CHIP INDUCTORS AISM-1210 Pb RoHS/RoHS II Compliant 3.2 x 2.5 x 2.2mm FEATURES: • High current rating coupled with high Q • Exceptionally reliable over wide operating temperature and under humid environment • Resilient to mechanical shocks


    Original     		PDF AISM-1210 AISM-1210-xxx AISM-1210-Inductance

    1N5819

    Abstract: BM34063 BM34063HP BM34063HS
    Text: BM34063 DC-DC CONVERTER Features Description z z z z z z z z The BM34063 Series is a monolithic control circuit containing the primary functions required for DC-to-DC converters. These devices consist of an internal temperature compensated reference, comparator,


    Original     		PDF BM34063 100Hz 100KHz BM34063 183oC 217oC 240oC 260oC 1N5819 BM34063HP BM34063HS

    mosfet y1

    Abstract: MOSFET MARK y2 mosfet k 61 y1 TL 434 H3055LJ Y2 MARKING
    Text: HI-SINCERITY Spec. No. : MOS200606 Issued Date : 2006.03.01 Revised Date : 2006.05.04 Page No. : 1/4 MICROELECTRONICS CORP. H3055LJ H3055LJ Pin Assignment 3-Lead Plastic TO-252 Package Code: J Pin 1: Gate Pin 2 & Tab: Drain Pin 3: Source Tab N-Channel Enhancement-Mode MOSFET 20V, 13A


    Original     		PDF MOS200606 H3055LJ H3055LJ O-252 V-10V) 200oC 183oC 217oC 260oC 245oC mosfet y1 MOSFET MARK y2 mosfet k 61 y1 TL 434 Y2 MARKING

    03n60

    Abstract: H03N60 H03N60E H03N60F transistor 100A 3N60
    Text: HI-SINCERITY Spec. No. : MOS200602 Issued Date : 2006.02.01 Revised Date : 2006.02.07 Page No. : 1/5 MICROELECTRONICS CORP. H03N60 Series H03N60 Series Pin Assignment Tab N-Channel Power Field Effect Transistor 3-Lead Plastic TO-220AB Package Code: E Pin 1: Gate


    Original     		PDF MOS200602 H03N60 O-220AB 200oC 183oC 217oC 260oC 245oC 10sec 03n60 H03N60E H03N60F transistor 100A 3N60

    AX78L05

    Abstract: FE0004 AX78LXX C3745 c3641 SOT-89 code BA
    Text: Page No. : 1/10 AX78LXXAM/BM AX78LXXAA/BA AX78LXX Series Pin Assignment 3-Terminal Positive Voltage Regulators 1 2 3-Lead Plastic SOT-89 Package Code: M Pin 1: VOUT Pin 2: GND Pin 3: VIN 3 Description 3-Lead Plastic TO-92 Package Code: A Pin 1: VOUT Pin 2: GND


    Original     		PDF AX78LXXAM/BM AX78LXXAA/BA AX78LXX OT-89 100mA 100mA OT-89 183oC 217oC 260oC AX78L05 FE0004 C3745 c3641 SOT-89 code BA

    TL 188 TRANSISTOR PNP

    Abstract: HTIP117D
    Text: HI-SINCERITY Spec. No. : HD200204 Issued Date : 2002.04.01 Revised Date : 2005.08.18 Page No. : 1/4 MICROELECTRONICS CORP. HTIP117D PNP EPITAXIAL PLANAR TRANSISTOR Description TO-126ML The HTIP117D is designed for use in general purpose amplifier and low-speed


    Original     		PDF HD200204 HTIP117D O-126ML HTIP117D 183oC 217oC 260oC TL 188 TRANSISTOR PNP

    h78l05

    Abstract: C4149 H78LXXAM H78L12 Marking BA SOT89 TL 873 H78LXX H78LXXAA h78L0 C3745
    Text: HI-SINCERITY Spec. No. : IC200403 Issued Date : 2004.03.01 Revised Date : 2004.08.31 Page No. : 1/10 MICROELECTRONICS CORP. H78LXXAM / BM H78LXXAA / BA H78LXX Series Pin Assignment 3-TERMINAL POSITIVE VOLTAGE REGULATORS 1 2 3-Lead Plastic SOT-89 Package Code: M


    Original     		PDF IC200403 H78LXXAM H78LXXAA H78LXX OT-89 100mA 183oC 217oC 260oC h78l05 C4149 H78L12 Marking BA SOT89 TL 873 h78L0 C3745

    E13009a

    Abstract: 13009a HMJE13009A 13009a TRANSISTOR mje13009a transistor 13009a
    Text: HI-SINCERITY Spec. No. : HE200206 Issued Date : 2002.02.01 Revised Date : 2006.07.04 Page No. : 1/6 MICROELECTRONICS CORP. HMJE13009A 12 AMPERE NPN SILICON POWER TRANSISTOR Description The HMJE13009A is designed for high-voltage, high-speed power switching


    Original     		PDF HE200206 HMJE13009A HMJE13009A O-220AB 120ns 183oC 217oC 260oC 10sec E13009a 13009a 13009a TRANSISTOR mje13009a transistor 13009a

    transistor h2a

    Abstract: HLB121A H2A transistor VCB-55 HA2001
    Text: HI-SINCERITY Spec. No. : HA200112 Issued Date : 2001.04.01 Revised Date : 2005.02.05 Page No. : 1/4 MICROELECTRONICS CORP. HLB121A NPN Triple Diffused Planar Type High Voltage Transistor Description The HLB121A is a medium power transistor designed for use in switching


    Original     		PDF HA200112 HLB121A HLB121A 183oC 217oC 260oC transistor h2a H2A transistor VCB-55 HA2001

    Untitled

    Abstract: No abstract text available
    Text: HIGH CURRENT SHIELDED POWER INDUCTOR ASPI-7318 MSL level: 2 This product is packed with dry packaging FEATURES: • 100%lead (Pb) free. • Lowest DCR/uH, in this package size. • Frequency range up to 5.0MHz • Handles high transient current spikes without saturation


    Original     		PDF ASPI-7318 ASPI-7318-xxx ISO9001

    ASPI-7318-1R5

    Abstract: 7318
    Text: HIGH CURRENT SHIELDED POWER INDUCTOR ASPI-7318 MSL level: 2 This product is packed with dry packaging FEATURES: • 100%lead (Pb) free. • Lowest DCR/uH, in this package size. • Frequency range up to 5.0MHz • Handles high transient current spikes without saturation


    Original     		PDF ASPI-7318 ASPI-7318-xxx ISO9001 ASPI-7318-1R5 7318

    wi-fi transmitter block diagram

    Abstract: wifi RECEIVER CIRCUIT DIAGRAM wifi transceiver 802.11n sensitivity dbm Broadcom SN8200 SN8200EVK sychip Murata SN8200 Broadcom 802.11 application note wifi mac transmitter
    Text: SN8200 Wi-Fi Network Controller Module User Manual And Datasheet Version: 1.1 January 23, 2013 Note: SyChip, LLC. reserves the right to make changes in specifications at any time and without notice. The information furnished in this data sheet is believed to be accurate and reliable. However, no responsibility is assumed


    Original     		PDF SN8200 wi-fi transmitter block diagram wifi RECEIVER CIRCUIT DIAGRAM wifi transceiver 802.11n sensitivity dbm Broadcom SN8200EVK sychip Murata SN8200 Broadcom 802.11 application note wifi mac transmitter

    AX358

    Abstract: AX358P AX358S 1N914
    Text: Page No. : 1/7 AX358P / AX358S Low Power Dual Operational Amplifiers 8-Lead Plastic DIP-8 Package Code: P Description These devices consist of two independent, high gain, internally frequencycompensated operational amplifiers designed operate from a single supply over a


    Original     		PDF AX358P AX358S 183oC 217oC 240oC 260oC AX358 050309-FE0011 AX358S 1N914

    HX8340B

    Abstract: HX8340-B mx 362-0
    Text: DATA SHEET DOC No. HX8340-B(N -DS ) HX8340-B(N) 176RGB x 220 dot, 262k color, with internal GRAM, TFT Mobile Single Chip Driver Preliminary version 01 October, 2007 HX8340-B(N) 176RGB x 220 dot, 262K color, with internal GRAM, TFT Mobile Single Chip Driver


    Original     		PDF HX8340-B 176RGB 224October, 225October, HX8340B mx 362-0

    Untitled

    Abstract: No abstract text available
    Text: LE AVAILAB MG3500/MG2580 HD H.264 CODEC DATA SHEET Advance Information July 23, 2010 Document Release 1.4 Document Number: PN1100 Functional Diagrams Pin Configurations appear at end of data sheet. Functional Diagrams continued at end of data sheet. UCSP is a trademark of Maxim Integrated Products, Inc.


    Original     		PDF MG3500/MG2580 PN1100 MG3500XX-376B

    HLB123

    Abstract: HLB123SA IC DATE CODE ha2006
    Text: HI-SINCERITY Spec. No. : HA200601 Issued Date : 2006.12.01 Revised Date : 2009.04,02 Page No. : 1/5 MICROELECTRONICS CORP. HLB123SA NPN EPITAXIAL PLANAR TRANSISTOR Description • High Voltage, High Speed Power Switch • Switch Regulators • PWM Inverters and Motor Controls


    Original     		PDF HA200601 HLB123SA 217oC 260oC 10sec HLB123 HLB123SA IC DATE CODE ha2006

    HTIP42C

    Abstract: No abstract text available
    Text: HI-SINCERITY Spec. No. : HE6733 Issued Date : 1994.08.10 Revised Date : 2004.11.19 Page No. : 1/4 MICROELECTRONICS CORP. HTIP42C PNP EPITAXIAL PLANAR TRANSISTOR Description The HTIP42C is designed for use in general purpose amplifier and switching applications.


    Original     		PDF HE6733 HTIP42C HTIP42C O-220 183oC 217oC 260oC

    H3842

    Abstract: Datasheet of ic ne555 NE555 PWM 500khz H3842P transistor 2N3905 DATASHEET Transistor BC109 equivalent H3842 2N3903 2N3905 H3842S
    Text: HI-SINCERITY Spec. No. : IC200408 Issued Date : 2004.04.01 Revised Date : 2004.04.28 Page No. : 1/12 MICROELECTRONICS CORP. H3842P / H3842S HIGH PERFORMANCE CURRENT MODE PWM CONTROLERS 8-Lead Plastic DIP-8 Package Code: P Description The H3842 Series is high performance fixed frequency current mode controllers.


    Original     		PDF IC200408 H3842P H3842S H3842 183oC 217oC 240oC 260oC H3842P, Datasheet of ic ne555 NE555 PWM 500khz transistor 2N3905 DATASHEET Transistor BC109 equivalent H3842 2N3903 2N3905 H3842S

    HMBT4403

    Abstract: No abstract text available
    Text: HI-SINCERITY Spec. No. : HE6818 Issued Date : 1993.06.30 Revised Date : 2004.08.30 Page No. : 1/5 MICROELECTRONICS CORP. HMBT4403 PNP EPITAXIAL PLANAR TRANSISTOR Description The HMBT4403 is designed for general purpose applications requiring high breakdown voltages.


    Original     		PDF HE6818 HMBT4403 HMBT4403 OT-23 183oC 217oC 260oC

    HE8051S

    Abstract: HE8551S
    Text: HI-SINCERITY Spec. No. : HE6119 Issued Date : 1992.11.25 Revised Date : 2004.07.26 Page No. : 1/5 MICROELECTRONICS CORP. HE8551S PNP EPITAXIAL PLANAR TRANSISTOR Description The HE8551S is designed for general purpose amplifier applications. Features • High DC Current gain: 100-400 at IC=150mA


    Original     		PDF HE6119 HE8551S HE8551S 150mA HE8051S 183oC 217oC 260oC HE8051S

    HJ41C

    Abstract: Y2 MARKING marking Y1 transistor
    Text: HI-SINCERITY Spec. No. : HE6010 Issued Date : 1996.02.14 Revised Date : 2005.07.14 Page No. : 1/4 MICROELECTRONICS CORP. HJ41C NPN EPITAXIAL PLANAR TRANSISTOR Description The HJ41C is designed for use in general purpose amplifier and switching applications.


    Original     		PDF HE6010 HJ41C HJ41C O-252 183oC 217oC 260oC Y2 MARKING marking Y1 transistor

    OC 140 germanium transistor

    Abstract: HSD879 Germanium Transistor transistor h2a
    Text: HI-SINCERITY Spec. No. : HA200207 Issued Date : 1996.07.15 Revised Date : 2005.02.15 Page No. : 1/4 MICROELECTRONICS CORP. HSD879 SILICON NPN EPITAXIAL TYPE TRANSISTOR Description For 1.5V and 3v electronic flash use. TO-92 Features • Charger-up time is about 1 ms faster than of a germanium transistor


    Original     		PDF HA200207 HSD879 183oC 217oC 260oC OC 140 germanium transistor HSD879 Germanium Transistor transistor h2a