HE8051S
Abstract: No abstract text available
Text: HI-SINCERITY Spec. No. : HE6111 Issued Date : 1992.09.30 Revised Date : 2004.07.26 Page No. : 1/5 MICROELECTRONICS CORP. HE8051S NPN EPITAXIAL PLANAR TRANSISTOR Description The HE8051S is designed for general purpose amplifier applications. TO-92 Absolute Maximum Ratings
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HE6111
HE8051S
HE8051S
183oC
217oC
260oC
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HE8051S
Abstract: No abstract text available
Text: HI-SINCERITY Spec. No. : HE6111 Issued Date : 1992.09.30 Revised Date : 2002.03.06 Page No. : 1/4 MICROELECTRONICS CORP. HE8051S NPN EPITAXIAL PLANAR TRANSISTOR Description The HE8051S is designed for general purpose amplifier applications. Absolute Maximum Ratings
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HE6111
HE8051S
HE8051S
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HE8051S
Abstract: HE8551S
Text: HI-SINCERITY Spec. No. : HE6119 Issued Date : 1992.11.25 Revised Date : 2004.07.26 Page No. : 1/5 MICROELECTRONICS CORP. HE8551S PNP EPITAXIAL PLANAR TRANSISTOR Description The HE8551S is designed for general purpose amplifier applications. Features • High DC Current gain: 100-400 at IC=150mA
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HE6119
HE8551S
HE8551S
150mA
HE8051S
183oC
217oC
260oC
HE8051S
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HE8051S
Abstract: HE8551S
Text: HI-SINCERITY Spec. No. : HE6119 Issued Date : 1992.11.25 Revised Date : 2001.07.19 Page No. : 1/4 MICROELECTRONICS CORP. HE8551S PNP EPITAXIAL PLANAR TRANSISTOR Description The HE8551S is designed for general purpose amplifier applications. Features • High DC Current gain: 100-400 at IC=150mA
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Original
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PDF
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HE6119
HE8551S
HE8551S
150mA
HE8051S
HE8051S
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