21APR11 Search Results

Contextual Info: C1 REVISED PER ECO 11 005140 21APR11 RK HMR C1 C1

AMP PBT - GF 20 series

Contextual Info: T H IS D R A W ING IS UNPUBLI SHED. C O R Y RI G HT RELEASED FOR ALL BY PUBLICATION RIGHTS R E V I S I ONS LOC RESERVED. LTR DESCRIPTION DATE REVISED PER ECO-11-005140 C1 21APR11 DWN APVD RK HMR •iE PLUG HOUSING . 5d= 0 . I5 . 8 REF c C — 7.4 CIRCUIT REF

929454

Abstract: ECO-11-005294 jetter
Contextual Info: REV I S IONS Al L TR DESCR IPTION DATE A1 REVISED PER ECO-11-005294 DWN APVD 21APR11 RK HMR Siehe Produktgruppenzeichnung 929454 REFER TO PRODUCT GROUP DRAWING FOR LATEST INFORMATION ON THE PART 929454 DI H E N S I ONS : 3 0SEP99 3 0SEP99 DWN S . Garcia m m

Contextual Info: TH I S DRAW ING I S UNPUBLI SHED. C O P Y R I G HT R E L E A S E D FOR P U B LIC A T IO N A LL BY R IG H T S LOG R E S E R V E D . GE REV I S IONS D I ST 00 LTR C1 Û. In H A n Ü 2 3 ffT M n el 6 -F U 2 3 0-6_ 6 _R _Z _s_n S_n 7 SCALE 776495-3 2 :I

Contextual Info: 336503-14-XXXX NOTES: REVISIONS REV DRAWING NO. 1. PACKAGE CABLE ASSEMBLY IN BAG. TAG IN BAG WITH "AMPHENOL CONNEX, 336503-14-XXXX AND DATE CODE". DESCRIPTION A THIRD ANGLE PROJ. DATE RELEASE TO MFG. 21-Apr-11 ECO - APPR RAK 2. CABLE ASSEMBLY TO BE 100% TESTED FOR CONTINUITY, SHORTS AND OPEN.

Contextual Info: TH I S DRAW I NG IS COPYRIGHT UNPUBLI SHED. - RELEASED F OR ALL BY PUBLICATION RIGHTS LOC D I ST R EV I S I ONS RESERVED. LTR R E F E R E N C E MATI NG I N T E R R A C E P A T T E R N 1 , 2 7 S T A G G E R E D P I T C H x 1 , 5 R OW- DI S T A N C E S1 SCALE

Contextual Info: 336503-12-XXXX NOTES: REVISIONS REV DRAWING NO. 1. PACKAGE CABLE ASSEMBLY IN BAG. TAG IN BAG WITH "AMPHENOL CONNEX, 336503-12-XXXX AND DATE CODE". DESCRIPTION A THIRD ANGLE PROJ. ECO DATE RELEASE TO MFG. 21-Apr-11 - APPR RAK 2. CABLE ASSEMBLY TO BE 100% TESTED FOR CONTINUITY, SHORTS AND OPEN.

Contextual Info: New Product VS-ETH1506S-M3, VS-ETH1506-1-M3 Vishay Semiconductors Hyperfast Rectifier, 15 A FRED Pt FEATURES • Hyperfast recovery time • Low forward voltage drop • 175 °C operating junction temperature • Low leakage current VS-ETH1506S-M3 • Compliant to RoHS Directive 2002/95/EC

Contextual Info: SQM50P08-25L_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,

Contextual Info: SQ4435EY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,

E-041

Abstract: VS-ETH3006-1-M3 SMD diode MARKING CODE e01 3006S VS-ETH3006STRR-M3
Contextual Info: New Product VS-ETH3006S-M3, VS-ETH3006-1-M3 Vishay Semiconductors Hyperfast Rectifier, 30 A FRED Pt FEATURES • Hyperfast recovery time • Low forward voltage drop • 175 °C operating junction temperature • Low leakage current VS-ETH3006S-M3 VS-ETH3006-1-M3

Contextual Info: 336503-08-XXXX NOTES: REVISIONS REV DRAWING NO. 1. PACKAGE CABLE ASSEMBLY IN BAG. TAG IN BAG WITH "AMPHENOL CONNEX, 336503-08-XXXX AND DATE CODE". DESCRIPTION A THIRD ANGLE PROJ. ECO DATE RELEASE TO MFG. 21-Apr-11 - APPR RAK 2. CABLE ASSEMBLY TO BE 100% TESTED FOR CONTINUITY, SHORTS AND OPEN.

AEC-Q200-002

Contextual Info: RFLW 3N Vishay Electro-Films High Frequency Wire Bondable RF Spiral Inductor, 0.030" x 0.030" FEATURES • High frequency • Wire bond assembly • Small size: 0.030" x 0.030" x 0.020" • Low DCR, high Q • Low parasitic capacitance, high SRF • Equivalent circuit model enclosed

RFLW5N1500

Contextual Info: RFLW 5N Vishay Electro-Films High Frequency Wire Bondable RF Spiral Inductor, 0.050" x 0.050" FEATURES • High frequency • Wire bond assembly • Small size: 0.050" x 0.050" x 0.020" • Low DCR, high Q • Low parasitic capacitance, high SRF • Equivalent circuit model enclosed

Contextual Info: 336503-13-XXXX NOTES: REVISIONS REV DRAWING NO. 1. PACKAGE CABLE ASSEMBLY IN BAG. TAG IN BAG WITH "AMPHENOL CONNEX, 336503-13-XXXX AND DATE CODE". DESCRIPTION A THIRD ANGLE PROJ. ECO DATE RELEASE TO MFG. 21-Apr-11 - APPR RAK 2. CABLE ASSEMBLY TO BE 100% TESTED FOR CONTINUITY, SHORTS AND OPEN.

AEC-Q200-002

Abstract: RFLW5N1500
Contextual Info: V i s h ay I n t e r t e c h n o l o g y, I n c . Inductors - Wire Bondable, Spiral for RF Circuits I INNOVAT AND TEC O L OGY RFLW N HN RF INDUCTOR O 19 62-2012 Vishay Electro-Films Wire Bondable RF Spiral Inductor Key Benefits • • • • • • •

RFLW3N2000BMNT0

Contextual Info: RFLW 3N Vishay Electro-Films High Frequency Wire Bondable RF Spiral Inductor, 0.030" x 0.030" FEATURES • High frequency • Wire bond assembly • Small size: 0.030" x 0.030" x 0.020" • Low DCR, high Q • Low parasitic capacitance, high SRF • Equivalent circuit model enclosed

RFLW5N1500

Contextual Info: RFLW 5N Vishay Electro-Films High Frequency Wire Bondable RF Spiral Inductor, 0.050" x 0.050" FEATURES • High frequency • Wire bond assembly • Small size: 0.050" x 0.050" x 0.020" • Low DCR, high Q • Low parasitic capacitance, high SRF • Equivalent circuit model enclosed

ETH1506

Abstract: ETH1506s
Contextual Info: New Product VS-ETH1506S-M3, VS-ETH1506-1-M3 Vishay Semiconductors Hyperfast Rectifier, 15 A FRED Pt FEATURES • Hyperfast recovery time • Low forward voltage drop • 175 °C operating junction temperature • Low leakage current VS-ETH1506S-M3 • Compliant to RoHS Directive 2002/95/EC

Si1016CX

Abstract: si1016x-t1-ge3 SI1016X
Contextual Info: Specification Comparison Vishay Siliconix Si1016CX vs. Si1016X Description: Package: Pin Out: N- and P-Channel 20 V D-S MOSFETs SC-89 Identical Part Number Replacements: Si1016CX-T1-GE3 replaces Si1016X-T1-GE3 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)

Contextual Info: VS-ETH3006S-M3, VS-ETH3006-1-M3 www.vishay.com Vishay Semiconductors Hyperfast Rectifier, 30 A FRED Pt FEATURES • Hyperfast recovery time • Low forward voltage drop • 175 °C operating junction temperature • Low leakage current VS-ETH3006S-M3 • Designed and qualified

SI3585DV

Contextual Info: Specification Comparison Vishay Siliconix Si3585CDV vs. Si3585DV Description: Package: Pin Out: N- and P-Channel 20 V D-S MOSFETs TSOP-6 Identical Part Number Replacements: Si3585CDV-T1-GE3 replaces Si3585DV-T1-E3 Si3585CDV-T1-GE3 replaces Si3585DV-T1-GE3

si4833a

Contextual Info: Specification Comparison Vishay Siliconix Si4833BDY vs. Si4833ADY Description: Package: Pin Out: P-Channel 30 V D-S MOSFET with Schottky Diode SO-8 Identical Part Number Replacements: Si4833BDY-T1-GE3 replaces Si4833ADY-T1-GE3 Si4833BDY-T1-GE3 replaces Si4833ADY-T1-E3

Contextual Info: RFLW 3N Vishay Electro-Films High Frequency Wire Bondable RF Spiral Inductor, 0.030" x 0.030" FEATURES • High frequency • Wire bond assembly • Small size: 0.030" x 0.030" x 0.020" • Low DCR, high Q • Low parasitic capacitance, high SRF • Equivalent circuit model enclosed