Untitled
Abstract: No abstract text available
Text: C1 REVISED PER ECO 11 005140 21APR11 RK HMR C1 C1
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21APR11
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Untitled
Abstract: No abstract text available
Text: 336503-14-XXXX NOTES: REVISIONS REV DRAWING NO. 1. PACKAGE CABLE ASSEMBLY IN BAG. TAG IN BAG WITH "AMPHENOL CONNEX, 336503-14-XXXX AND DATE CODE". DESCRIPTION A THIRD ANGLE PROJ. DATE RELEASE TO MFG. 21-Apr-11 ECO - APPR RAK 2. CABLE ASSEMBLY TO BE 100% TESTED FOR CONTINUITY, SHORTS AND OPEN.
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336503-14-XXXX
336503-14-XXXX
21-Apr-11
200ma
21-Apr-11
assembly/336503-14-XXXX
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Untitled
Abstract: No abstract text available
Text: 336503-12-XXXX NOTES: REVISIONS REV DRAWING NO. 1. PACKAGE CABLE ASSEMBLY IN BAG. TAG IN BAG WITH "AMPHENOL CONNEX, 336503-12-XXXX AND DATE CODE". DESCRIPTION A THIRD ANGLE PROJ. ECO DATE RELEASE TO MFG. 21-Apr-11 - APPR RAK 2. CABLE ASSEMBLY TO BE 100% TESTED FOR CONTINUITY, SHORTS AND OPEN.
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336503-12-XXXX
336503-12-XXXX
21-Apr-11
200ma
21-Apr-11
assembly/336503-12-XXXX
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Untitled
Abstract: No abstract text available
Text: New Product VS-ETH1506S-M3, VS-ETH1506-1-M3 Vishay Semiconductors Hyperfast Rectifier, 15 A FRED Pt FEATURES • Hyperfast recovery time • Low forward voltage drop • 175 °C operating junction temperature • Low leakage current VS-ETH1506S-M3 • Compliant to RoHS Directive 2002/95/EC
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VS-ETH1506S-M3,
VS-ETH1506-1-M3
VS-ETH1506S-M3
2002/95/EC
JEDEC-JESD47
O-262
2011/65/EU
2002/95/EC.
2002/95/EC
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Untitled
Abstract: No abstract text available
Text: SQM50P08-25L_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,
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SQM50P08-25L
AN609,
3391m
5891m
6174m
8832m
8418m
0033m
21-Apr-11
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Untitled
Abstract: No abstract text available
Text: SQ4435EY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,
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SQ4435EY
AN609,
0196u
5029u
2915m
2374m
6293m
2851m
3062u
21-Apr-11
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E-041
Abstract: VS-ETH3006-1-M3 SMD diode MARKING CODE e01 3006S VS-ETH3006STRR-M3
Text: New Product VS-ETH3006S-M3, VS-ETH3006-1-M3 Vishay Semiconductors Hyperfast Rectifier, 30 A FRED Pt FEATURES • Hyperfast recovery time • Low forward voltage drop • 175 °C operating junction temperature • Low leakage current VS-ETH3006S-M3 VS-ETH3006-1-M3
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VS-ETH3006S-M3,
VS-ETH3006-1-M3
VS-ETH3006S-M3
2002/95/EC
JEDEC-JESD47
O-262
11-Mar-11
E-041
VS-ETH3006-1-M3
SMD diode MARKING CODE e01
3006S
VS-ETH3006STRR-M3
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Untitled
Abstract: No abstract text available
Text: 336503-08-XXXX NOTES: REVISIONS REV DRAWING NO. 1. PACKAGE CABLE ASSEMBLY IN BAG. TAG IN BAG WITH "AMPHENOL CONNEX, 336503-08-XXXX AND DATE CODE". DESCRIPTION A THIRD ANGLE PROJ. ECO DATE RELEASE TO MFG. 21-Apr-11 - APPR RAK 2. CABLE ASSEMBLY TO BE 100% TESTED FOR CONTINUITY, SHORTS AND OPEN.
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336503-08-XXXX
336503-08-XXXX
21-Apr-11
21-Apr-11
assembly/336503-08-XXXX
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AEC-Q200-002
Abstract: No abstract text available
Text: RFLW 3N Vishay Electro-Films High Frequency Wire Bondable RF Spiral Inductor, 0.030" x 0.030" FEATURES • High frequency • Wire bond assembly • Small size: 0.030" x 0.030" x 0.020" • Low DCR, high Q • Low parasitic capacitance, high SRF • Equivalent circuit model enclosed
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11-Mar-11
AEC-Q200-002
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RFLW5N1500
Abstract: No abstract text available
Text: RFLW 5N Vishay Electro-Films High Frequency Wire Bondable RF Spiral Inductor, 0.050" x 0.050" FEATURES • High frequency • Wire bond assembly • Small size: 0.050" x 0.050" x 0.020" • Low DCR, high Q • Low parasitic capacitance, high SRF • Equivalent circuit model enclosed
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2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
RFLW5N1500
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SMD diode MARKING CODE e01
Abstract: 93574 VS-ETH3006STRR-M3
Text: New Product VS-ETH3006S-M3, VS-ETH3006-1-M3 Vishay Semiconductors Hyperfast Rectifier, 30 A FRED Pt FEATURES • Hyperfast recovery time • Low forward voltage drop • 175 °C operating junction temperature • Low leakage current VS-ETH3006S-M3 VS-ETH3006-1-M3
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VS-ETH3006S-M3,
VS-ETH3006-1-M3
VS-ETH3006S-M3
2002/95/EC
JEDEC-JESD47
O-262
2011/65/EU
2002/95/EC.
2002/95/EC
SMD diode MARKING CODE e01
93574
VS-ETH3006STRR-M3
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Untitled
Abstract: No abstract text available
Text: 336503-13-XXXX NOTES: REVISIONS REV DRAWING NO. 1. PACKAGE CABLE ASSEMBLY IN BAG. TAG IN BAG WITH "AMPHENOL CONNEX, 336503-13-XXXX AND DATE CODE". DESCRIPTION A THIRD ANGLE PROJ. ECO DATE RELEASE TO MFG. 21-Apr-11 - APPR RAK 2. CABLE ASSEMBLY TO BE 100% TESTED FOR CONTINUITY, SHORTS AND OPEN.
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336503-13-XXXX
336503-13-XXXX
21-Apr-11
200ema
21-Apr-11
assembly/336503-13-XXXX
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AEC-Q200-002
Abstract: RFLW5N1500
Text: V i s h ay I n t e r t e c h n o l o g y, I n c . Inductors - Wire Bondable, Spiral for RF Circuits I INNOVAT AND TEC O L OGY RFLW N HN RF INDUCTOR O 19 62-2012 Vishay Electro-Films Wire Bondable RF Spiral Inductor Key Benefits • • • • • • •
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RFLW5N1200A
RFLW5N8000B
RFLW5N1500A
RFLW5N1000A
100is
102See
122See
21-Apr-11
AEC-Q200-002
RFLW5N1500
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RFLW3N2000BMNT0
Abstract: No abstract text available
Text: RFLW 3N Vishay Electro-Films High Frequency Wire Bondable RF Spiral Inductor, 0.030" x 0.030" FEATURES • High frequency • Wire bond assembly • Small size: 0.030" x 0.030" x 0.020" • Low DCR, high Q • Low parasitic capacitance, high SRF • Equivalent circuit model enclosed
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2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
RFLW3N2000BMNT0
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ETH1506
Abstract: ETH1506s
Text: New Product VS-ETH1506S-M3, VS-ETH1506-1-M3 Vishay Semiconductors Hyperfast Rectifier, 15 A FRED Pt FEATURES • Hyperfast recovery time • Low forward voltage drop • 175 °C operating junction temperature • Low leakage current VS-ETH1506S-M3 • Compliant to RoHS Directive 2002/95/EC
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Original
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VS-ETH1506S-M3,
VS-ETH1506-1-M3
VS-ETH1506S-M3
2002/95/EC
JEDEC-JESD47
O-262
11-Mar-11
ETH1506
ETH1506s
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Si1016CX
Abstract: si1016x-t1-ge3 SI1016X
Text: Specification Comparison Vishay Siliconix Si1016CX vs. Si1016X Description: Package: Pin Out: N- and P-Channel 20 V D-S MOSFETs SC-89 Identical Part Number Replacements: Si1016CX-T1-GE3 replaces Si1016X-T1-GE3 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
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Si1016CX
Si1016X
SC-89
Si1016CX-T1-GE3
Si1016X-T1-GE3
21-Apr-11
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Untitled
Abstract: No abstract text available
Text: VS-ETH3006S-M3, VS-ETH3006-1-M3 www.vishay.com Vishay Semiconductors Hyperfast Rectifier, 30 A FRED Pt FEATURES • Hyperfast recovery time • Low forward voltage drop • 175 °C operating junction temperature • Low leakage current VS-ETH3006S-M3 • Designed and qualified
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VS-ETH3006S-M3,
VS-ETH3006-1-M3
VS-ETH3006S-M3
-JESD47
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
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SI3585DV
Abstract: No abstract text available
Text: Specification Comparison Vishay Siliconix Si3585CDV vs. Si3585DV Description: Package: Pin Out: N- and P-Channel 20 V D-S MOSFETs TSOP-6 Identical Part Number Replacements: Si3585CDV-T1-GE3 replaces Si3585DV-T1-E3 Si3585CDV-T1-GE3 replaces Si3585DV-T1-GE3
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Si3585CDV
Si3585DV
Si3585CDV-T1-GE3
Si3585DV-T1-E3
Si3585DV-T1-GE3
21-Apr-11
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si4833a
Abstract: No abstract text available
Text: Specification Comparison Vishay Siliconix Si4833BDY vs. Si4833ADY Description: Package: Pin Out: P-Channel 30 V D-S MOSFET with Schottky Diode SO-8 Identical Part Number Replacements: Si4833BDY-T1-GE3 replaces Si4833ADY-T1-GE3 Si4833BDY-T1-GE3 replaces Si4833ADY-T1-E3
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Si4833BDY
Si4833ADY
Si4833BDY-T1-GE3
Si4833ADY-T1-GE3
Si4833ADY-T1-E3
Si4833ASS
21-Apr-11
si4833a
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Untitled
Abstract: No abstract text available
Text: RFLW 3N Vishay Electro-Films High Frequency Wire Bondable RF Spiral Inductor, 0.030" x 0.030" FEATURES • High frequency • Wire bond assembly • Small size: 0.030" x 0.030" x 0.020" • Low DCR, high Q • Low parasitic capacitance, high SRF • Equivalent circuit model enclosed
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Original
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PDF
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2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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AMP PBT - GF 20 series
Abstract: No abstract text available
Text: T H IS D R A W ING IS UNPUBLI SHED. C O R Y RI G HT RELEASED FOR ALL BY PUBLICATION RIGHTS R E V I S I ONS LOC RESERVED. LTR DESCRIPTION DATE REVISED PER ECO-11-005140 C1 21APR11 DWN APVD RK HMR •iE PLUG HOUSING . 5d= 0 . I5 . 8 REF c C — 7.4 CIRCUIT REF
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ECO-11-005140
21APR11
AMP PBT - GF 20 series
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929454
Abstract: ECO-11-005294 jetter
Text: REV I S IONS Al L TR DESCR IPTION DATE A1 REVISED PER ECO-11-005294 DWN APVD 21APR11 RK HMR Siehe Produktgruppenzeichnung 929454 REFER TO PRODUCT GROUP DRAWING FOR LATEST INFORMATION ON THE PART 929454 DI H E N S I ONS : 3 0SEP99 3 0SEP99 DWN S . Garcia m m
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ECO-11-005294
21APR11
30SEP99
27JUN96
929454
jetter
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Untitled
Abstract: No abstract text available
Text: TH I S DRAW ING I S UNPUBLI SHED. C O P Y R I G HT R E L E A S E D FOR P U B LIC A T IO N A LL BY R IG H T S LOG R E S E R V E D . GE REV I S IONS D I ST 00 LTR C1 Û. In H A n Ü 2 3 ffT M n el 6 -F U 2 3 0-6_ 6 _R _Z _s_n S_n 7 SCALE 776495-3 2 :I
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ECO-11-005294
21APR11
776495-I
7DEC02
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Untitled
Abstract: No abstract text available
Text: TH I S DRAW I NG IS COPYRIGHT UNPUBLI SHED. - RELEASED F OR ALL BY PUBLICATION RIGHTS LOC D I ST R EV I S I ONS RESERVED. LTR R E F E R E N C E MATI NG I N T E R R A C E P A T T E R N 1 , 2 7 S T A G G E R E D P I T C H x 1 , 5 R OW- DI S T A N C E S1 SCALE
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ECO-11-005294
21APR11
I88275-6
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