21F0800 Search Results

5STP21F1200

Contextual Info: VDSM ITAVM ITRMS ITSM VT0 rT = = = = = = 1400 V 1960 A 3080 A 25000 A 0.75 V 0.157 mΩ Ω Phase Control Thyristor 5STP 21F1400 Doc. No. 5SYA1023-04 Sep. 01 • Patented free-floating silicon technology • Low on-state and switching losses • Designed for traction, energy and industrial applications

Contextual Info: VDSM ITAVM ITRMS ITSM VT0 rT = = = = = = 1400 V 1960 A 3080 A 25000 A 0.75 V 0.157 mΩ Ω Phase Control Thyristor 5STP 21F1400 Doc. No. 5SYA1023-04 Jan. 02 • Patented free-floating silicon technology • Low on-state and switching losses • Designed for traction, energy and industrial applications

21F1400

Abstract: 5STP21F1200 abb 26000
Contextual Info: Key Parameters VDSM = 1400 ITAVM = 2250 ITRMS = 3530 ITSM = 25000 VT0 = 0.75 rT = 0.157 V A A A V mΩ Phase Control Thyristor 5STP 21F1400 Doc. No. 5SYA 1023-03 April, 98 Features • Patented free-floating silicon technology • Low on-state and switching losses

Contextual Info: VDSM ITAVM ITRMS ITSM VT0 rT = = = = = = 1400 V 1960 A 3080 A 25000 A 0.75 V 0.157 mΩ Ω Phase Control Thyristor 5STP 21F1400 Doc. No. 5SYA1023-04 Jan. 02 • Patented free-floating silicon technology • Low on-state and switching losses • Designed for traction, energy and industrial applications

Contextual Info: VDSM = 1400 V ITAVM = 1960 A ITRMS = 3080 A ITSM = 25000 A VT0 = 0.75 V rT = 0.157 mΩ Phase Control Thyristor 5STP 21F1400 Doc. No. 5SYA1023-04 Aug.00 • Patented free-floating silicon technology • Low on-state and switching losses • Designed for traction, energy and industrial applications