21N60 Search Results

21N60

Abstract: 21N60ED mgw diode 21n60e transistor data cd 100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet MGW 21N60ED Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT is co-packaged with a soft recovery ultra-fast rectifier and uses an advanced

21N60

Contextual Info: MOTOROLA Order this document by 21N60ED/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M GW 21N60ED Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate T his Insulated G ate B ipolar T ra n sisto r IG BT is c o -p a c k a g e d

Contextual Info: Ék rtELTTl SPECIFICATI'311 FOR APPROVAL LIECHÂNICÂL DIMENSIONS REV: CUSTOMER PART DELTA PART NO.: NO.: DT38-21N60ASR PART DESCRIPTION: DELTA REV,: ISSUE DATE: TEMP °C APPLICATION: HUM(% D VDSL TRANSFORMER Î. MECHANICAL DIMENSIONS: 81N60AS DXXXX R« EPOXY

Contextual Info: MOTOROLA Order this document by 21N60ED/D SEMICONDUCTOR TECHNICAL DATA Preliminary Data Sheet M GW 21N60ED Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT Is co-packaged with a soft recovery u ltra -fa s t rectifier and uses an advanced

21n60G

Abstract: FMW21N60G 21N60 HER 103 diode
Contextual Info: DATE CHECKED Sep.-27-'04 CHECKED Sep.-27-'04 NAME DWG.NO. Th i s m at er i al and t he i nfo r mat i on her ei n i s t he p r ope r t y of Fuj i El ect r i c C o.,Lt d. They s hal l be nei t her r epr oduced, copi ed, l ent , or d i s cl os e d i n a ny way what s o ev er f or t he us e of any

Contextual Info: Enclosures & Components • • • • Flat front panels EMC lat front panels Fan front panels Hinged front panels Front Panels for Sub Racks and Enclosures Enclosures & Components Backplanes System Platforms Cabinets Switches, Knobs & LEDs Introduction Elma is a global manufacturer of products for housing electronic systems. The

CAE000064

Abstract: 81-054-03 E1910477 21N242 21N612 21N304 21N603 27C412-11 25C384-11 25N381-19
Contextual Info: Power Supplies PSU Selection Chart Option Watts Part no E1910060 PFC 5v 3.3V +12V -12V No 15A - 5A 1A No 40A - 6A 3A No 30A 20A 11A 1A C1 150 C2 250 F3 300 CAE001881 G4 350 E1910477 Yes 50A 40A 12A 2A H4 350 E1910510 NA 50A 40A 12A 2A C5 350 69-T350-1205FA

21N60

Abstract: a 1712 mosfet s300h 21N55 247 AA
Contextual Info: I X Y S C0RP IDE ° 1 MbflbSatj 00D0342 □ IX Y S I 21N60, 55 21N60, 55 Parameter Sym. IXTH21N55 IXTM21N55 21N60 21N60 Unit Drain-Source Voltage 1 Vdss 550 600 Vdc Drain-Gate Voltage (Rqs = 1.0Mfl) (1) Vdgr 550 600 Vdc Gate-Source Voltage Continuous

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Contextual Info: Adaptation kits Subdivision Width dividing kit 6U/3U Width b Usable width 66-138 66-116 66-111 66-107 a 42HP 63HP 81HP 84HP Standard Type14 21HP c = 19HP c = 40HP c = 58HP c = 61HP 11-979-2 14-979-2 28HP c = 12HP c = 33HP c = 51HP c = 54HP 11-969-2 14-969-2

equivalent data book of 10N60 mosfet

Abstract: MC14016CP GD4511 an-6466 CX 2859 SMD 74AC14 spice 6120* harris HCF4018be 7028 SMD Transistor spice irfbc40
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3hp 150

Abstract: 66-544-29 21N604 26N310 26D604-6 LM 4265 66-548-24 21N308 26F304-1 26F604-1
Contextual Info: Front panels 19Љ front panels 19Љ front/rear panels, unperforated Clear anodized aluminum 3 mm Height Part No. 1U 43.6 mm 1.71Љ 20-101 2U 88.1 mm 3.46Љ 20-102 3U 132.5 mm 5.21Љ 20-103 4U 177.0 mm 6.96Љ 20-104 5U 221.5 mm 8.72Љ 20-105 6U 266.0 mm 10.47Љ