21T1A Search Results

Contextual Info: SSM3J46CTB 東芝電界効果トランジスタ シリコンPチャネルMOS形 U-MOSⅥ SSM3J46CTB ○ パワーマネージメントスイッチ 単位: mm 0.8±0.05 1.5 V 駆動です オン抵抗が低い Ron = 250 mΩ (max) (@VGS = -1.5 V) Ron = 178 mΩ (max) (@VGS = -1.8 V)

Contextual Info: SSM3J46CTB TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type U-MOS VI SSM3J46CTB ○ Power Management Switch Applications • • Unit: mm 1.5 V drive Low ON-resistance: RDS(ON) = 250 mΩ (max) (@VGS = -1.5 V) RDS(ON) = 178 mΩ (max) (@VGS = -1.8 V)

Contextual Info: SSM3J46CTB TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type U-MOS VI SSM3J46CTB ○ Power Management Switch Applications • • Unit: mm 1.5 V drive Low ON-resistance:RDS(ON) = 250 mΩ (max) (@VGS = -1.5 V) RDS(ON) = 178 mΩ (max) (@VGS = -1.8 V)

21T1A

Contextual Info: SSM3J46CTB TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type U-MOS VI SSM3J46CTB ○ Power Management Switch Applications • • Unit: mm 1.5 V drive Low ON-resistance:RDS(ON) = 250 mΩ (max) (@VGS = -1.5 V) RDS(ON) = 178 mΩ (max) (@VGS = -1.8 V)

Contextual Info: SSM3J46CTB TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type U-MOS VI SSM3J46CTB Power Management Switch Applications Unit: mm • • 1.5 V drive Low ON-resistance:RDS(ON) = 250 m (max) (@VGS = -1.5 V) RDS(ON) = 178 m (max) (@VGS = -1.8 V) RDS(ON) = 133 m (max) (@VGS = -2.5 V)

Contextual Info: SSM3J46CTB TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type U-MOSⅥ SSM3J46CTB ○ Power Management Switch Applications 0.8±0.05 1.5 V drive Low ON-resistance:Ron = 250 mΩ (max) (@VGS = -1.5 V) Ron = 178 mΩ (max) (@VGS = -1.8 V) Ron = 133 mΩ (max) (@VGS = -2.5 V)

SSM3J46CTB

Contextual Info: SSM3J46CTB 東芝電界効果トランジスタ シリコンPチャネルMOS形 U-MOSⅥ SSM3J46CTB ○ パワーマネージメントスイッチ 単位: mm • • 1.5 V 駆動です オン抵抗が低い RDS(ON) = 250 mΩ (max) (@VGS = -1.5 V) RDS(ON) = 178 mΩ (max) (@VGS = -1.8 V)