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    Samtec Inc DW-22-20-TM-T-200

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    Samtec Inc HW-32-20-TM-D-830-110

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    Powell Electronics HW-32-20-TM-D-830-110 32 1
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    220TM Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    ixys dsi

    Abstract: 30-08AC 30-12AC ir 2411
    Text: DSI 30 Rectifier Diode 220TM VRRM = 800 - 1200 V IF AV M = 30 A Electrically Isolated Back Surface VRSM VRRM V V 900 1300 800 1200 Type ISOPLUS 220TM DSI 30-08AC DSI 30-12AC A C Preliminary Data Sheet C A Symbol IFRMS IFAV IFSM I2t Conditions Maximum Ratings


    Original     		PDF ISOPLUS220TM 220TM 30-08AC 30-12AC ISOPLUS220 DS98791A ixys dsi 30-08AC 30-12AC ir 2411

    IXUC160N075

    Abstract: No abstract text available
    Text: ADVANCED TECHNICAL INFORMATION Trench Power MOSFET IXUC160N075 VDSS = 75 V ID25 = 160 A Ω RDS on = 6.5 mΩ 220TM Electrically Isolated Back Surface ISOPLUS 220TM Symbol Test Conditions Maximum Ratings G VDSS TJ = 25°C to 150°C 75 V VGS Continuous


    Original     		PDF IXUC160N075 ISOPLUS220TM 220TM 728B1 065B1 123B1 IXUC160N075

    52N30

    Abstract: 52N30P IXFC52N30P 1M300 52APF
    Text: IXFC52N30P PolarHTTM Power MOSFET HiPerFETTM VDSS ID25 RDS on trr (Electrically Isolated Back Surface) = = ≤ ≤ 300V 24A Ω 75mΩ 200ns N-Channel Enhancement Mode Avalanche Rated ISOPLUS 220TM E153432 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C


    Original     		PDF IXFC52N30P 200ns 220TM E153432 52N30P 6-13-06-C 52N30 52N30P IXFC52N30P 1M300 52APF

    Untitled

    Abstract: No abstract text available
    Text: CS 29 Phase Control Thyristor VRRM = 800/1200 V IT RMS = 35 A IT(AV)M = 23 A 220TM Electrically Isolated Back Surface Preliminary Data Sheet VRSM VDSM VRRM VDRM V V 800 1200 800 1200 ISOPLUS 220TM Type A C CS 29-08io1C CS 29-12io1C G C A G Isolated back surface*


    Original     		PDF ISOPLUS220TM 220TM 29-08io1C 29-12io1C

    STE30NA50-DK

    Abstract: ISOWATT-220 to220 ste38na50 transistors irf640 STE30NA50 STP5NA90FI STB30N10 STE30NA50-da ISOWATT220
    Text: TRANSISTORS POWER MOSFETS POWER MOS 2 1 2 3 3 1 ISOTOPTM DPAK D2PAK IPAK SOT-82 SOT-223 1 ISOWATT 220TM Fully isolated TO-220 220TM ISOWATT 218TM (Fully isolated) TO-247 MAX247TM Internal schematic diagrams POWER MOS VDSS (V) Ron (max) (Ω) 1000 1000


    Original     		PDF OT-82 OT-223 O-220 220TM MAX220TM 218TM O-247 MAX247TM Max247 Max220 STE30NA50-DK ISOWATT-220 to220 ste38na50 transistors irf640 STE30NA50 STP5NA90FI STB30N10 STE30NA50-da ISOWATT220

    IXFC24N50

    Abstract: IXFH24N50
    Text: ADVANCED TECHNICAL INFORMATION HiPerFETTM MOSFET IXFC24N50 VDSS ID25 RDS on trr 220TM Electrically Isolated Back Surface ISOPLUS 220TM Symbol Test Conditions VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MW 500 V Maximum Ratings


    Original     		PDF IXFC24N50 ISOPLUS220TM 220TM IXFH24N50 IXFC24N50

    Untitled

    Abstract: No abstract text available
    Text: PolarHVTM HiPerFET Power MOSFET VDSS ID25 IXFC16N50P RDS on trr (Electrically Isolated Back Surface) = = ≤ ≤ 500V 10A Ω 450mΩ 200ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode ISOPLUS 220TM E153432 Symbol Test Conditions Maximum Ratings


    Original     		PDF IXFC16N50P 200ns 220TM E153432 16N50P 5J-745 5-1-09-C

    Untitled

    Abstract: No abstract text available
    Text: CS 29 Phase Control Thyristor VRRM = 800/1200 V IT RMS = 35 A IT(AV)M = 23 A 220TM Electrically Isolated Back Surface Preliminary Data Sheet VRSM VDSM VRRM VDRM V V 800 1200 ISOPLUS 220TM Type A 800 1200 C CS 29-08io1C CS 29-12io1C G TVJ = TVJM TC = 95°C; 180° sine (IT(RMS) current limit)


    Original     		PDF ISOPLUS220TM 220TM 29-08io1C 29-12io1C

    13N50

    Abstract: IXTH12N50A
    Text: Power MOSFET IXTC 13N50 VDSS = 500 V ID25 = 12 A RDS on = 0.4 Ω 220TM Electrically Isolated Back Surface N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Preliminary Data Sheet ISOPLUS 220TM Symbol Test Conditions Maximum Ratings VDSS


    Original     		PDF 13N50 ISOPLUS220TM 220TM IXTH12N50A 728B1 13N50

    IXUC200N055

    Abstract: 123B16
    Text: ADVANCED TECHNICAL INFORMATION Trench Power MOSFET IXUC200N055 VDSS = 55 V ID25 = 200 A Ω RDS on = 5.1 mΩ 220TM Electrically Isolated Back Surface ISOPLUS 220TM Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 55 V VGS Continuous


    Original     		PDF IXUC200N055 ISOPLUS220TM 220TM 728B1 065B1 123B1 IXUC200N055 123B16

    Z 728

    Abstract: 15N80Q IXFH15N80Q 15N80
    Text: IXFC 15N80Q HiPerFETTM ISOPLUS 220TM MOSFET VDSS ID25 RDS on Q-Class Electrically Isolated Back Surface = 800 V = 13 A = 0.65 Ω trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg 220TM Symbol Test Conditions Maximum Ratings


    Original     		PDF 15N80Q 220TM ISOPLUS220TM 728B1 123B1 728B1 065B1 Z 728 15N80Q IXFH15N80Q 15N80

    Phase-leg Rectifier Diode

    Abstract: No abstract text available
    Text: DSP 8 Phase-leg Rectifier Diode VRRM = 800/1200 V IF AV M = 2 x 11 A 220TM Electrically Isolated Back Surface VRSM VRRM V V 900 1300 800 1200 Type ISOPLUS 220TM E153432 DSP 8-08AC DSP 8-12AC Preliminary Data Sheet 1 2 3 Isolated back surface* Symbol


    Original     		PDF ISOPLUS220TM 220TM E153432 8-08AC 8-12AC ISOPLUS220 DS98820 Phase-leg Rectifier Diode

    IGD 001

    Abstract: No abstract text available
    Text: CS 29 Phase Control Thyristor VRRM = 800/1200 V IT RMS = 35 A IT(AV)M = 23 A 220TM Electrically Isolated Back Surface Preliminary Data Sheet VRSM VDSM VRRM VDRM V V 800 1200 800 1200 ISOPLUS 220TM Type A C CS 29-08io1C CS 29-12io1C G Isolated back surface*


    Original     		PDF ISOPLUS220TM 220TM 29-08io1C 29-12io1C IGD 001

    60n10

    Abstract: No abstract text available
    Text: ADVANCE TECHNICAL INFORMATION Trench Power MOSFET IXUC 60N10 220TM Electrically Isolated Back Surface VDSS = 100 V ID25 = 60 A Ω RDS on = 16.4 mΩ ISOPLUS 220TM Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 100 V VGS Continuous


    Original     		PDF 60N10 ISOPLUS220TM 220TM 728B1 065B1 123B1 60n10

    Untitled

    Abstract: No abstract text available
    Text: PolarHVTM HiPerFET Power MOSFET VDSS ID25 IXFC14N60P RDS on trr (Electrically Isolated Back Surface) = = ≤ ≤ 600V 8A Ω 630mΩ 200ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode ISOPLUS 220TM E153432 Symbol Test Conditions Maximum Ratings


    Original     		PDF IXFC14N60P 200ns 220TM E153432 14N60P 12-22-08-G

    Untitled

    Abstract: No abstract text available
    Text: CS 19 ADVANCE TECHNICAL INFORMATION VRRM IT RMS IT(AV)M Phase Control Thyristor 220TM = 800 - 1200 V = 35 A = 13 A Electrically Isolated Back Surface VRSM VDSM VRRM VDRM V V 800 1200 800 1200 ISOPLUS 220TM Type A C CS 19-08ho1C CS 19-12ho1C G G Test Conditions


    Original     		PDF ISOPLUS220TM 220TM 19-08ho1C 19-12ho1C ISOPLUS220

    IXFC14N60P

    Abstract: 14n60 T14n
    Text: IXFC14N60P PolarHVTM HiPerFET Power MOSFET VDSS ID25 RDS on trr (Electrically Isolated Back Surface) = = ≤ ≤ 600V 8A Ω 630mΩ 200ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode ISOPLUS 220TM E153432 Symbol Test Conditions Maximum Ratings


    Original     		PDF IXFC14N60P 200ns 220TM E153432 14N60P 12-22-08-G IXFC14N60P 14n60 T14n

    CS19

    Abstract: No abstract text available
    Text: CS 19 ADVANCE TECHNICAL INFORMATION VRRM IT RMS IT(AV)M Phase Control Thyristor 220TM = 800 - 1200 V = 35 A = 13 A Electrically Isolated Back Surface VRSM VDSM VRRM VDRM V V 800 1200 800 1200 ISOPLUS 220TM Type A C CS 19-08ho1C CS 19-12ho1C G C Symbol


    Original     		PDF ISOPLUS220TM 220TM 19-08ho1C 19-12ho1C ISOPLUS220 CS19

    Untitled

    Abstract: No abstract text available
    Text: HiPerDynFREDTM Epitaxial Diode IFAV VRRM trr 220TM Electrically Isolated Back Surface Preliminary Data Sheet VRSM VRRM V V 600 600 600 600 DSEA ISOPLUS 220TM Type 1 DSEC 2 3 DSEA 16-06AC DSEC 16-06AC G 1 Symbol 2 Conditions 3 TC = 120°C; rectangular, d = 0.5


    Original     		PDF ISOPLUS220TM 220TM 16-06AC 6-06A DS98831

    IXUC100N055

    Abstract: No abstract text available
    Text: ADVANCED TECHNICAL INFORMATION Trench Power MOSFET IXUC100N055 VDSS = 55 V ID25 = 100 A RDS on = 7.7 mW 220TM Electrically Isolated Back Surface ISOPLUS 220TM Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 55 V VGS Continuous ±20


    Original     		PDF IXUC100N055 ISOPLUS220TM 220TM -100A/ms, IXUC100N055

    Untitled

    Abstract: No abstract text available
    Text: PolarHVTM HiPerFET Power MOSFET ISOPLUS 220TM IXFC 26N50P VDSS = = ID25 RDS on ≤ ≤ trr (Electrically Isolated Tab) 500 V 15 A Ω 260 mΩ 250 ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS


    Original     		PDF 220TM 26N50P 02-09-06-B

    Untitled

    Abstract: No abstract text available
    Text: PolarHVTM HiPerFET Power MOSFET ISOPLUS 220TM IXFC 14N80P VDSS = 800 V = 8 A ID25 Ω RDS on ≤ 770 mΩ ≤ 250 ns trr (Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS


    Original     		PDF 220TM 14N80P

    96N15P

    Abstract: TEm 2411
    Text: PolarHTTM HiPerFET Power MOSFET 220TM VDSS = 150 V ID25 = 42 A Ω RDS on = 26 mΩ < 200 ns trr IXFC 96N15P (Electrically Isolated Back Surface) N-Channel Enhancement Mode Fast Recovery Diode, Avalanche Rated ISOPLUS 220TM E153432 Symbol Test Conditions


    Original     		PDF ISOPLUS220TM 96N15P 220TM E153432 96N15P TEm 2411

    CS19

    Abstract: No abstract text available
    Text: CS 19 ADVANCE TECHNICAL INFORMATION = 800 - 1200 V = 35 A = 13 A VRRM IT RMS IT(AV)M Phase Control Thyristor 220TM Electrically Isolated Back Surface VRSM VDSM VRRM VDRM V V 800 1200 800 1200 ISOPLUS 220TM Type A C CS 19-08ho1C CS 19-12ho1C G G Symbol


    Original     		PDF ISOPLUS220TM 220TM 19-08ho1C 19-12ho1C ISOPLUS220 CS19