221X221 Search Results

Contextual Info: 3Q E D WM 7 ci 5 c1 2 3 7 Q 030m E SGS-THOMSON 1 • " P 3 c M s û S"TH0MS0N =[L[i(gTO10(g i M T H 4 0 N 0 6 C H IP N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN DIE FORM ' DIE SIZE: 221x221 mils ' METALLIZATION: Top Al Back A u /C r/N i/A u ’ BACKSIDE THICKNESS:

sgsp311

Abstract: substitu bipolar transistors sgsp331 sgsp531 10a 400v bipolar transistor
Contextual Info: r z 7 ^ 7 § S G S - m o M S O N M g [M & (I(g T[M iiO (gS TECHNICAL NOTE POWER MOS IN SWITCHING AN EVALUATION METHOD AND A PRACTICAL EXAMPLE INTRODUCTION POWER MOS are used in switch mode power sup­ plies. H.F. welding systems, industrial ovens, re­ lay drivers and other similar applications. These