2222 CBE Search Results

2N2222

Abstract: PN2222 2N2222A 2N2222 pnp 2N2222-PN2222 FN2222A 2n2222 micro electronics PN2222A le PN2222A 2N2222 power
Contextual Info: 2N2222 PN 2222 2 N 2222A PN 2222A THE 2N2222, 2N2222A, PN2222, PN2222A ARE NPN SILICON PLANAR EPITAXIAL TRANSISTORS FOR GENERAL PURPOSE AMPLIFIERS AND MEDIUM SPEED SWITCHING APPLICATIONS. THEY ARE COMPLEMENTARY TO THE FNP TYPE 2N2907, 2N2907A, PN2907, PN2907A RESPECTIVELY.

2222A

Abstract: ip 2222A PN2222 PN2222A BOD 1-04 2222 cbe T 2222A
Contextual Info: Transys Electronics L I M I T E D NPN SILICON PLANAR SWITCHING TRANSISTORS E PN2222 PN2222A CBE TO-92 BC Complementary Silicon Transistors For Switching And Linear Applications DC Amplifier & Driver For Industrial Applications. ABSOLUTE MAXIMUM RATINGS Ta=25deg C unless otherwise specified

Contextual Info: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer NPN SILICON PLANAR SWITCHING TRANSISTORS PN2222 PN2222A CBE TO-92 Complementary Silicon Transistors For Switching And Linear Applications

ip 2222A

Abstract: PN2222 PN2222A
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR SWITCHING TRANSISTORS E PN2222 PN2222A CBE TO-92 BC Complementary Silicon Transistors For Switching And Linear Applications DC Amplifier & Driver For Industrial Applications.

CDIL PN2222A

Abstract: ip 2222A PN2222 PN2222A
Contextual Info: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company NPN SILICON PLANAR SWITCHING TRANSISTORS E PN2222 PN2222A CBE TO-92 BC Complementary Silicon Transistors For Switching And Linear Applications DC Amplifier & Driver For Industrial Applications.

bf494

Abstract: bf 494 BF495 Transistors BF 494 BF 494 C bf494 emitter common BP495
Contextual Info: BF 494 BF 495 NPN SILICON RF SMALL SIGNAL TRANSISTORS $ | j V - iììp f j S y CASE T0-92E THE BF494, BF495 ARE NPN SILICON PLANAR EPITAXIAL TRANSISTORS FOR RF SMALL SIGNAL APPLICATIONS UP TO 100MHz. CBE BF494 ABSOLUTE MAXIMUM RATINGS BF495 Collector-Base Voltage

Contextual Info: :`XTJVJ\RWV \W \NZURVWTWPa JVM P]RMNTRVN[ >V\ZWM]L\RWV + 8WVLNX\ Ob_\W fgTgX eX_Tl ,TU0 OON- \f T `XV[Ta\VT_l cTff\iX iXef\ba bY \gf b_WXe VbhagXecTeg g[X CIN ,X_XVgeb`XV[Ta\VT_ eX_Tl-. cebi\W\aZ XffXag\T_l g[X fT`X cXeYbe`TaVX. Uhg j\g[bhg `bi\aZ cTegf0 Gg \f T gbgT_l X_XVgeba\V WXi\VX

C27-C36

Abstract: TP5000 M1535 a1 RS200M TP4506 TP5056 TP4721 TP5860 J5027 TP4456
Contextual Info: 1 2 3 4 12 3 4 5 6 7 8 9 6 . M 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 DBI# 0:3 K2 K4 L6 K1 L3 M6 L2 M3 M4 N1 M1 N2 N4 N5 T1 R2 P3 P4 R3 T2 U1 P6 U3 T4 V2 R6 W1 T5 U4 V3 W2 Y1 AB1 1 2 3 4 4 12 4 12 B H_ADS# H_BNR# H_BPRI# L5 ADSTB0#

OPTi chipset 486

Abstract: 82C496 opti 82c496 82C497 opti 486 chipset opti 82c206 32KX8 82C206 82497 block interleave
Contextual Info: O PTi'S D X B B 82C497 MAR V1J. PRELIMINARY 5 OPTi-DXBB PC/AT Chipset 82C497 PRELIMINARY 82C497 DATA BOOK Version 1.2 January 16,1992 PAGE 1 Powered by ICminer.com Electronic-Library Service CopyRight 2003 s n . 1991 ¿uamt la pag£ a Powered by ICminer.com Electronic-Library Service CopyRight 2003

OPTi chipset 486

Abstract: 82C496 opti 486 82C497 opti 82c496 DATV opti 486 chipset
Contextual Info: V12 PRELIMINARY O PT ï'S D XB B 82C497 f> I*»; OPTi-DXBB PC/AT Chipset 82C497 PRELIMINARY 82C497 DATA BOOK Version 1.2 January 16,1992 PAGE 1 hλ g-l-l-1 CACHE READ HIT ' TÍ I TB • -I Ta h -3-2 CACH6 RCAO HIT Tt • Ta » TÄ I M « CACHfi N R I T E H X T „ |

silicon npn planar rf transistor sot 143

Abstract: marking c8 transistor transistor K 2937 BFG10 small RF NPN POWER TRANSISTOR 2.5 GHZ C5 MARKING TRANSISTOR NPN planar RF transistor RF NPN POWER TRANSISTOR 2.5 GHZ RF POWER TRANSISTOR NPN N70 transistor
Contextual Info: Philips Semiconductors Product specification NPN 2 GHz RF power transistor FEATURES BFG10; BFG10/X PINNING • High power gain PIN • High efficiency DESCRIPTION BFG10 see Fig.1 • Small size discrete power amplifier 1 • 1.9 GHz operating area 2 base

Philips FA 291

Abstract: ld138 UHF POWER TRANSISTOR SOT223H UHF POWER TIC 122 Transistor
Contextual Info: Philips Semiconductors Product specification UH F power transistor BLT71 FEATURES • Very high efficiency • Low supply voltage. APPLICATIONS • Hand-held radio equipment in common emitter class-AB operation in the 900 MHz communications band. DESCRIPTION

Contextual Info: 12 25mm T-1 3/4 123456789A4ABC29DEF 2222222222 2 1 Ambient Light Sensor 2 2 234567381 2 ‧3456727829ABBCD7E2FDF8528A7A72 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 ‧ 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 1

B87C

Contextual Info: 12 23mm T-1 2222222222 22 12345678994ABC29D8E 1 Ambient Light Sensor 2 2 234567381 2 ‧3456727829ABBCD7E2FDF8528A7A72 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 ‧ 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 1

transistor BT 139 F applications note

Abstract: 12W 60 chip transistor TIC 122 Transistor BLT71 transistor BR 471 A Transistor A 471 TRANSISTOR S 813 FC 0137 9746 transistor 1199
Contextual Info: Philips Semiconductors Product specification UHF power transistor BLT71 FEATURES • Very high efficiency • Low supply voltage. APPLICATIONS • Hand-held radio equipment in common emitter class-AB operation in the 900 MHz communications band. DESCRIPTION

3866S

Abstract: BF247 equivalent brochage des circuits integres Triac GK transistor bc 564 BC547E TI Small Signal FET Catalogue bcw 91 transistor SESCO SESCOSEM
Contextual Info: GENERAL INFORMATION , , v^ INFORMATION GENERALE ” ; V Index Index 3 ' v.»A* K \ a 1 Selection guide Guide de sélection Qualified devices Dispositifs homologués Quality Qualité Symbols Symboles DATA SHEETS NOTICES SILICON SIGNAL TRANSISTORS TRANSISTORS DE SIGNAL AU SILICIUM

bc337 TRANSISTOR equivalent

Abstract: TRANSISTOR C875, PIN TRANSISTOR C875 BC337 SOT-103 rf transistor mar 8 C875 transistor BC337 SPICE MJE 340 transistor transistor SOT103
Contextual Info: Philips Semiconductors Product specification NPN 2 GHz RF power transistor BLT10 FEATURES DESCRIPTION • High power gain NPN silicon planar epitaxial transistor encapsulated in a 4-pin, dual-emitter SOT 103 plastic package. • High efficiency • Small size discrete power amplifier

rf transistor mar 8

Abstract: npn C 1740 Micro Choke 2222-032 SOT103 "RF Power Transistor" Transistor 1740 BD228 BLT11 2322 157 philips
Contextual Info: Philips Semiconductors Product specification NPN 2 GHz RF power transistor BLT11 FEATURES DESCRIPTION • High power gain NPN silicon planar epitaxial transistor encapsulated in a 4-pin dual-emitter SOT1Q3 plastic package. • High efficiency • Small size discrete power amplifier

npn C 1740

Abstract: transistor bf 422 NPN equivalent of 2222 NPN rf transistor mar 8 2222 032 NPN planar RF transistor BD228 BLT11 NPN power transistor spice SOT103
Contextual Info: Philips Semiconductors Product specification NPN 2 G H z RF power transistor BLT11 FEATURES DESCRIPTION • High power gain NPN silicon planar epitaxial transistor encapsulated in a 4-pin dual-emitter SOT 103 plastic package. • High efficiency • Small size discrete power amplifier

catalogue des transistors bipolaires de puissance

Abstract: brochage des circuits integres H3C1-07 LB 124 transistor equivalente transistor A2222 equivalent of transistor bc212 bc 214 BFw-11 terminals SESCOSEM transistor equivalente transistor BC 141 Brochage BCW91
Contextual Info: GENERAL INFORMATION , , v^ INFORMATION GENERALE ” ; V Index Index 3 ' v.»A* K \ a 1 Selection guide Guide de sélection Qualified devices Dispositifs homologués Quality Qualité Symbols Symboles DATA SHEETS NOTICES SILICON SIGNAL TRANSISTORS TRANSISTORS DE SIGNAL AU SILICIUM

BF transistor series datasheet 90

Abstract: transistor Bf 981 BLT71 FC 0137 MLD130
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BLT71 UHF power transistor Product specification 1995 Aug 17 Philips Semiconductors Product specification UHF power transistor BLT71 FEATURES • Very high efficiency • Low supply voltage. 4 handbook, halfpage APPLICATIONS

NPN planar RF transistor

Abstract: BFG10 SOT143 C9 XN-71 transistor K 2937
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BFG10; BFG10/X NPN 2 GHz RF power transistor Product specification Supersedes data of 1995 Mar 07 File under Discrete Semiconductors, SC14 1995 Aug 31 Philips Semiconductors Product specification NPN 2 GHz RF power transistor

Contextual Info: BFG10; BFG10/X NPN 2 GHz RF power transistor Rev. 05 — 22 November 2007 Product data sheet IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact

BD228

Abstract: BFG10 transistor K 2937
Contextual Info: BFG10; BFG10/X NPN 2 GHz RF power transistor Rev. 05 — 22 November 2007 Product data sheet IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact