PN2907A Search Results

PN2907A

Contextual Info: PN2907A PNP SMALL SIGNAL TRANSISTOR POWER SEMICONDUCTOR Features • • • • • Epitaxial Planar Die Construction Available in Both Through-Hole and Surface Mount Packages Suitable for Switching and General Purpose Amplifier Applications Complementary NPN Type Available

PN2907A

Contextual Info: UTC PN2907A PNP EPITAXIAL PLANAR TRANSISTOR PNP GENERAL PURPOSE AMPLIFIER FEATURES This UTC PN2907A is designed for use as a general purpose amplifier and switch requiring collector currents to 500 mA. 1 TO-92 1:EMITTER 2:BASE 3:COLLECTOR MAXIMUM RATINGS NOET 1 (Ta=25°C unless otherwise noted)

MMBT2907A

Abstract: MMPQ2907 NMT2907 PN2907A PZT2907A T092
Contextual Info: PN2907A I MMBT2907A / MMPQ2907/ NMT2907 I PZT2907A D iscrete P O W E R & S ig n a l Technologies National e t S e m i c o n d u c t o r ' " MMBT2907A PN2907A SOT-23 PZT2907A B SOT-223 Mark: 2F NMT2907 MMPQ2907 SOIC-16 ° PNP General Purpose Amplifier This device is designed for use as a general purpose amplifier

PN2222A

Abstract: PN2907A
Contextual Info: PN2222A SMALL SIGNAL NPN TRANSISTOR PRELIMINARY DATA • ■ ■ Type Marking PN2222A PN2222A SILICON EPITAXIAL PLANAR NPN TRANSISTOR TO-92 PACKAGE SUITABLE FOR THROUGH-HOLE PCB ASSEMBLY THE PNP COMPLEMENTARY TYPE IS PN2907A APPLICATIONS WELL SUITABLE FOR TV AND HOME

PN2907A

Abstract: 2N2907A 2N2907A die 10D3 2N2222A PN2222A 2n2222a to 92 TO-92 Gehause 2N2907A plastic
Contextual Info: PN2907A / 2N2907A PN2907A / 2N2907A General purpose Si-Epitaxial PlanarTransistors Si-Epitaxial Planar-Transistoren für universellen Einsatz PNP PNP Version 2005-11-21 Power dissipation Verlustleistung 18 9 16 E BC 2 x 2.54 Dimensions / Maße [mm] 625 mW

Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# PN2907A Features • • x Through Hole Package Capable of 600mWatts of Power Dissipation Case Material: Molded Plastic. UL Flammability

pn3644

Abstract: pn364
Contextual Info: S E M IC O N D U C T O R PN3644 PNP General Purpose Amplifier T his device is designed for use as general purpose amplifiers and switches requiring collector currents to 500 mA. Sourced from Process 63. See PN2907A for characteristics. Absolute Maximum RâtinÇjS

JAN2N4033

Abstract: JANTX2N2907 2N390E 2N4033 HS2907A
Contextual Info: Microsemi Microsemi Division Package Outline kype iif PNP 2N2907A HS2907A JAN2N2907A JANTX2N2907A JANTXV2N2907 HS5087 HS3904 HS3906 2N4029 JAN2N4029 JANTX2N4029 JANTXV2N4029 2N390E 2N4403 PN2907A 2N3811L JANTX2N3810 JANTX2N3810L JANTX2N3811 JANTX2N3811L JANTXV2N3810

PN2907A

Abstract: PN2907
Contextual Info: PN2907 PN2907A _ SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P silicon planar epitaxial transistors in plastic TO-92 package fo r general purpose applications. N-P-N complement is PN2222/A. QUICK REFERENCE D A T A PN2907 PN2907A

PN3645

Abstract: PN2907A
Contextual Info: PN3645 C TO-92 BE PNP General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 500 mA. Sourced from Process 63. See PN2907A for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted

Contextual Info: UMT2907A / SST2907A / MMST2907A / PN2907A Transistors PNP Medium Power Transistor Switching UMT2907A / SST2907A / MMST2907A / PN2907A !External dimensions (Units : mm) UMT2907A 2.0±0.2 0.9±0.1 1.3±0.1 0.65 0.65 0.2 (3) !Package, marking and packaging specifications

BC25SB

Abstract: MRF547 S02907A 425M SF231 LOW-POWER SILICON PNP KT361K trw rf NTM2907A MRF549
Contextual Info: RF LOW-POWER SILICON PNP Item Number Part Number V BR CEO >= HSE141 SF231 SF331 MMBT8598 MMBT2907A PH2907A PN2907A 2N2905A 2N2907A 2N576:r 5 fO ~~~26i07A 20 25 30 ~~h~o~o SCtd MMST2907A MMST2907A NTM2907A NTM2907A NT2907A NT2907A PH2907AR P2N2907A 2N2905AL

MPS3703

Abstract: PN2907A
Contextual Info: S E M IC O N D U C T O R MPS3703 PNP General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 500 mA. Sourced from Process 63. See PN2907A for characteristics. Absolute Màximum RStinQS

PN2222A

Abstract: PN2907A
Contextual Info: PN2907A VISHAY PNP SMALL SIGNAL TRANSISTOR y LITEM ZI POWER SEMICONDUCTOR Features Epitaxial Planar Die Construction Available in Both Through-Hole and Surface Mount Packages Suitable for Switching and General Purpose Amplifier Applications Complementary NPN Type Available

Contextual Info: PN2907A / MMBT2907A / PZT2907A PN2907A MMBT2907A PZT2907A C C E C B TO-92 B SOT-23 E B SOT-223 Mark: 2F E C PNP General Purpose Amplifier This device is designed for use as a general purpose amplifier and switch requiring collector currents to 500 mA. Sourced

TN2905A

Abstract: PN2907A
Contextual Info: N TN2905A C TO-226 BE PNP General Purpose Amplifier This device is designed for use as a general purpose amplifier and switch requiring collector currents to 500 mA. Sourced from Process 63. See PN2907A for characteristics. Absolute Maximum Ratings* Symbol

CBVK741B019

Abstract: F63TNR MMBT2907 PN2222N PN2907 PN2907A PNP pN2907
Contextual Info: PN2907 MMBT2907 C E C TO-92 BE B SOT-23 Mark: 2B PNP General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 500 mA. Sourced from Process 63. See PN2907A for characteristics. Absolute Maximum Ratings*

transistor BC 331

Abstract: BC 331 Transistor PN2907 PN2907A transistor PN2907 transistors BC 183
Contextual Info: Transys Electronics L I M I T E D PNP SILICON PLANAR EPITAXIAL TRANSISTORS PN2907 PN2907A TO-92 Plastic Package E BC Complementary Silicon Transistors for Switching and Linear Applications. ABSOLUTE MAXIMUM RATINGS Ta=25 º C unless specified otherwise DESCRIPTION

Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# PN2907A Features • • Through Hole Package Capable of 600mWatts of Power Dissipation Pin Configuration

marking EB 202 transistor

Abstract: PN2222A le
Contextual Info: PN2222A NPN SMALL SIGNAL TRANSISTOR Features • • • • Epitaxial Planar Die Construction Available in Both Through-Hole and Surface Mount Packages Ideal for Switching and Am plifier Applications Complementary PNP Type Available PN2907A KM hM TO-92

PN2907A

Abstract: 2PN2907A PN2907A CONNECTIONS 90090 PN2222A PN290
Contextual Info: PN2907A Semiconductor PNP Silicon Transistor Descriptions • General purpose application • Switching application Features • Low Leakage current • Low collector saturation voltage enabling low voltage operation • Complementary pair with PN2222A Ordering Information

PN2907A

Contextual Info: PN2907A MMBT2907A TO-92 SOT-23 PZT2907A SOT-223 Mark: 2F MMPQ2907 NMT2907 SOT-6 Bi Mark: 200 SOIC-16 PNP General Purpose Amplifier This device is designed for use as a general purpose amplifier and switch requiring collector currents to 500 mA. Sourced from

Contextual Info: SEMICONDUCTOR -u PN4143 . ;^C* C< \ TO-92 Be PNP General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 500 mA. Sourced from Process 63. See PN2907A for characteristics. Absolute Maximum RatinQS

Contextual Info: S E M IC O N D U C T O R tm PN2907 MMBT2907 Mark: 2B PNP General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 500 mA. Sourced from Process 63. See PN2907A for characteristics.