225MW Search Results

Contextual Info: Preliminary BAS21/A/C/S 225mW Surface Mount Fast Switching Diode Pb RoHS SOT-23 COMPLIANCE Features — — — — Fast switching speed Surface mount package ideally suited for automatic insertion For general purpose switching applications High conductance Dimensions in inches and millimeters

Contextual Info: 2SC2411K NPN GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE 32 Volts POWER 225mW • NPN epitaxial silicon,planar design • Collector-emitter voltage VCE=32V • Collector current IC=500mA • Lead free in comply with EU RoHS 2011/65/EU directives. • Green molding compound as per IEC61249 Std. . Halogen Free

Contextual Info: MMBZ5221B Series Surface Mount Zener Diodes SMALL SIGNAL ZENER DIODES 225m WATTS Features: *225mw Power Dissipation *Ideal for Surface Mountted Application *Zener Breakdown Voltage Range 2.4V to 91V 3 Mechanical Data: 1 *Case : SOT-23 Molded plastic *Terminals: Solderable per MIL-STD-202, Method 208

Z5228B

Contextual Info: MMBZ5221B Series Surface Mount Zener Diodes * “G” Lead Pb -Free SMALL SIGNAL ZENER DIODES 225m WATTS Features: *225mw Power Dissipation *Ideal for Surface Mountted Application *Zener Breakdown Voltage Range 2.4V to 91V 3 Mechanical Data: 1 *Case : SOT-23 Molded plastic

transistor m4a

Contextual Info: DATA SHEET MMBT4401 NPN GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE 40 Volts POWER 225mW FEATURES NPN epitaxial silicon, planar design Collector-emitter voltage VCE = 40V Collector current IC = 600mA Both normal and Pb free product are available : Normal : 80~95 % Sn, 5~20 % Pb

LBZX84C20LT1

Abstract: LBZX84C3V0LT1 LBZX84C16LT1 2J225 LBZX84C7V5LT1
Contextual Info: LESHAN RADIO COMPANY, LTD. SEMICONDUCTOR TECHNICAL DATA LBZX84C2V4LT1 SERIES 225mW SOT-23 225 mW SOT-23 Zener Voltage Regulator Diodes GENERAL DATA APPLICABLE TO ALL SERIES IN THIS GROUP 3 Cathode Zener Voltage Regulator Diodes 1 Anode 3 1 2 SOT– 23 TO–236AB

adsp1016a

Abstract: ADSP-1016ATE ADSP-1016A ADSP1016ASE MPY016HJ1 d64a sp1016 MPY016HJ ADSP-1016ASE ADSP-1016ATE/883B
Contextual Info: □ ANALOG DEVICES 16 x 16-Bit CMOS Multiplier ADSP-1016A FEATURES 16 x 16-Bit Parallel Multiplication 70ns Multiplication Time 225mW Power Dissipation with TTL-Compatible CMOS Technology Twos-Complement, Unsigned-Magnitude and MixedMode Data Formats Available in Hermetically Sealed 64-Pin DIP,

Contextual Info: 2SA1298LT1 PNP EPITAXIAL SILICON TRANSISTOR SOT-23 3 2W OUTPUT AMPLIFIER OF PORTABLE 1 RADIOS IN CLASS B PUSH-PULL OPERATION 2 Complement to MMPT2SC3265LT1 1. 1.BASE 2.EMITTER 3.COLLECTOR Collector-current:Ic=-500mA High Total Power Dissipation:Pc=225mW 0.4

2SC2786

Abstract: S9015LT1
Contextual Info: 2SC2786 NPN EPITAXIAL SILICON TRANSISTOR PRE-AMPLIFIER,LOW LEVEL&LOW NOISE * Complement to S9015LT1 * Collector Current: Ic= 100mA * Collector-Emitter Voltage:Vce= 45V * High Total Power Dissipation:Pc=225mW * High Hfe And Good Linearity 1. ABSOLUTE MAXIMUM RATINGS at Ta=25

marking 12Y

Abstract: 12y sot 23 2SA1037 2SC27 2SC2712 Collector 5v npn TRANSISTOR 12Y marking
Contextual Info: 2SC2712 NPN EPITAXIAL SILICON TRANSISTOR SOT-23 3 PRF-AMPLIFIER,LOW LEVEL&LOW NOISE 1 Complemen to 2SA1037 Collector-current:Ic=100mA 2 Collector-Emiller Voltage:V CE =45V 1. 1.BASE 2.EMITTER 3.COLLECTOR High Totalpower Dissipation Pc=225mW High life And Good Linearity

Contextual Info: S9012LT1 SEMICONDUCTOR Shandong Yiguang Electronic Joint stock Co., Ltd * * * TECHNICAL DATA PNP EPITAXIAL SILICON TRANSISTOR Complement to S9013LT1 Package:SOT-23 Collector Current :Ic= -500mA High Total Power Dissipation :Pc=225mW ABSOLUTE MAXIMUM RATINGS at Ta=25℃

"SIGNAL DIODE"

Abstract: BAS116
Contextual Info: BAS116 225mW SMD Switching Diode Small Signal Diode SOT-23 F A Features —Low power loss, high current capability, low VF B —Surface device type mounting E —Moisture sensitivity level 1 —Matte Tin Sn lead finish with Nickel(Ni) underplate C G D —Pb free version and RoHS compliant

S9014L

Abstract: S9014LT1 sot-23 MARKING O7 S9014LT1-L
Contextual Info: S9014LT1 SEMICONDUCTOR Shandong Yiguang Electronic Joint stock Co., Ltd TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR PRE-AMPLIFIER,LOW LEVEL&LOW NOISE * Complement to S9015LT1 * Collector Current: Ic= 100mA * Collector-Emitter Voltage:Vce= 45V * High Total Power Dissipation:Pc=225mW

DTA144EE

Contextual Info: D TA 1 44 EE PNP EPITAXIAL SILICON TRANSISTOR SOT-23 3 2W OUTPUT AMPLIFIER OF PORTABLE 1 RADIOS IN CLASS B PUSH-PULL OPERATION 2 1. Collector-current:Ic=-500mA High Total Power Dissipation:Pc=225mW 1.BASE 2.EMITTER 3.COLLECTOR 0.4 0.95 0.95 2.9 1.9 2.4 1.3

MMBT2907ALT1

Contextual Info: 2SD602LT1 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR * Complement to MMBT2907ALT1 * Collector Dissipation: Pc max =225mW * Collector-Emitter Voltage :Vceo= 40V ABSOLUTE MAXIMUM RATINGS at Ta=25 Collector-Base Voltage Vcbo Rating Unit 75 1.

marking 81J

Contextual Info: SEMICONDUCTOR TECHNICAL DATA MMBZ5221BLT1 SERIES 225mW SOT-23 225 mW SOT-23 Zener Voltage Regulator Diodes GENERAL DATA APPLICABLE TO ALL SERIES IN THIS GROUP 3 Cathode Zener Voltage Regulator Diodes 1 Anode 3 1 2 MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES: 260°C for 10 seconds

Contextual Info: BZX84C2V4 Series Surface Mount Zener Diodes SMALL SIGNAL ZENER DIODES 225m WATTS * “G” Lead Pb -Free Features: *225mw Power Dissipation *Ideal for Surface Mountted Application *Zener Breakdown Voltage Range 2.4V to 75V 3 1 Mechanical Data: 2 SOT-23 *Case : SOT-23 Molded plastic

TRANSISTOR m3a

Contextual Info: MMBT4403 PNP GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE 40V POWER 225mW FEATURES 0.120 3.04 0.110(2.80) PNP epitaxial silicon, planar design Collector-emitter voltage VCE = -40V Collector current IC =-600mA 0.056(1.40) Complimentary (NPN) device: MMBT4401

BZX84C12LT1

Abstract: BZX84C2V4LT1 BZX84C2V7LT1 BZX84C3V0LT1 BZX84C3V3LT1 BZX84C3V6LT1 BZX84C3V9LT1 BZX84C4V3LT1 BZX84C4V7LT1 BZX84C5V1LT1
Contextual Info: LESHAN RADIO COMPANY, LTD. SEMICONDUCTOR TECHNICAL DATA BZX84C2V4LT1 SERIES 225mW SOT-23 225 mW SOT-23 Zener Voltage Regulator Diodes GENERAL DATA APPLICABLE TO ALL SERIES IN THIS GROUP 3 Cathode Zener Voltage Regulator Diodes 1 Anode 3 1 2 CASE 318–07, STYLE8

Contextual Info: BAT54TW / ADW / CDW / SDW / DW SURFACE MOUNT SCHOTTKY DIODE ARRAYS 30 Volts VOLTAGE 225mWatts POWER 0.087 2.20 0.074(1.90) 0.010(0.25) 0.087(2.20) 0.078(2.00) Isolated diode arrays for significant board space savings Surface mount package ideally suited for automatic insertion

Contextual Info: DATA SHEET MMBD6100 SURFACE MOUNT SWITCHING DIODES 225mWatts POWER 80 Volts VOLTAGE FEATURES • Dual, common cathode configuration • Very fast reverse recovery Trr< 2.0ns typical • Low capacitance ( < 2.5pF @ 0V) • Surface mount package ideally suited for anuomatic insetion

BAS21C

Abstract: BAS21 BAS21A BAS21S BAS21 SOT23
Contextual Info: BAS21 / A / C / S 225mW SMD Switching Diode Small Signal Diode SOT-23 F A Features B E —Fast switching speed —Surface device type mounting C —Moisture sensitivity level 1 G D —Matte Tin Sn lead finish with Nickel(Ni) underplate —Pb free version and RoHS compliant

Contextual Info: PART NUMBER: 225MWR050K METALLIZED POLYESTER WRAP AND FILL AXIAL LEAD CAPACITORS ^ fc Parts are RoHS com pliant Date code w hen parts became RoHS: 14 ELECTRICAL SPECIFICATIONS Capacitance: 2.2 uF Tolerance: -10 % . +10 % Dissipation Factor: 0.01 Max at 1000 Hz and 25°C

marking djw

Contextual Info: |U |IC =R O N MT4C4005 1 MEG x 4 DRAM FAST PAGE MODE, WRITE-PER-BIT FEATURES • Industry standard x4 pinout, timing, functions and packages • High performance, CMOS silicon gate process • Single +5V±10% power supply • Low power, 3mW standby; 225mW active, typical