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    225MW Price and Stock

    Cornell Dubilier Electronics Inc 225MWR250K

    CAP FILM 2.2UF 10% 250VDC AXIAL
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    DigiKey 225MWR250K Bulk 8,179 1
    • 1 $2.49
    • 10 $1.635
    • 100 $1.1805
    • 1000 $1.01
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    Mouser Electronics 225MWR250K 112
    • 1 $2.39
    • 10 $1.64
    • 100 $1.18
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    Verical 225MWR250K 4,400 200
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    225MWR250K 959 61
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    Cornell Dubilier Electronics Inc 225MWR100K

    CAP FILM 2.2UF 10% 100VDC AXIAL
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    DigiKey 225MWR100K Bulk 974 1
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    Mouser Electronics 225MWR100K 522
    • 1 $2.45
    • 10 $1.68
    • 100 $1.11
    • 1000 $0.941
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    Cornell Dubilier Electronics Inc 225MWR050K

    CAP FILM 2.2UF 10% 50VDC AXIAL
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    DigiKey 225MWR050K Bulk 285 1
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    Mouser Electronics 225MWR050K 390
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    Newark 225MWR050K Bulk 600 1
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    TTI 225MWR050K Bulk 200 100
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    Cornell Dubilier Electronics Inc 225MWR400K

    CAP FILM 2.2UF 10% 400VDC AXIAL
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    DigiKey 225MWR400K Bulk 80 1
    • 1 $5.16
    • 10 $3.484
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    • 1000 $2.12016
    • 10000 $1.9275
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    Mouser Electronics 225MWR400K 95
    • 1 $3.78
    • 10 $2.93
    • 100 $1.92
    • 1000 $1.92
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    Verical 225MWR400K 500 100
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    TTI 225MWR400K Bulk 500 50
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    Cornell Dubilier Electronics Inc 225MWR063K

    CAP FILM 2.2UF 10% 63VDC AXIAL
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    DigiKey 225MWR063K Bulk 4,800
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    Mouser Electronics 225MWR063K
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    225MW Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    225MWR050K Illinois Capacitor Capacitors - Film Capacitors - CAP FILM 2.2UF 10% 50VDC AXIAL Original PDF
    225MWR063K Illinois Capacitor Capacitors - Film Capacitors - CAP FILM 2.2UF 10% 63VDC AXIAL Original PDF
    225MWR100K Illinois Capacitor Capacitors - Film Capacitors - CAP FILM 2.2UF 10% 100VDC AXIAL Original PDF
    225MWR250K Illinois Capacitor Capacitors - Film Capacitors - CAP FILM 2.2UF 10% 250VDC AXIAL Original PDF
    225MWR400K Illinois Capacitor Capacitors - Film Capacitors - CAP FILM 2.2UF 10% 400VDC AXIAL Original PDF

    225MW Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Preliminary BAS21/A/C/S 225mW Surface Mount Fast Switching Diode Pb RoHS SOT-23 COMPLIANCE Features — — — — Fast switching speed Surface mount package ideally suited for automatic insertion For general purpose switching applications High conductance Dimensions in inches and millimeters


    Original     		PDF BAS21/A/C/S 225mW OT-23 100uA 100mA 200mA BAS21/A/C/S)

    Untitled

    Abstract: No abstract text available
    Text: 2SC2411K NPN GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE 32 Volts POWER 225mW • NPN epitaxial silicon,planar design • Collector-emitter voltage VCE=32V • Collector current IC=500mA • Lead free in comply with EU RoHS 2011/65/EU directives. • Green molding compound as per IEC61249 Std. . Halogen Free


    Original     		PDF 2SC2411K 225mW 500mA 2011/65/EU IEC61249 OT-23 MIL-STD-750, 2013-REV

    Untitled

    Abstract: No abstract text available
    Text: MMBZ5221B Series Surface Mount Zener Diodes SMALL SIGNAL ZENER DIODES 225m WATTS Features: *225mw Power Dissipation *Ideal for Surface Mountted Application *Zener Breakdown Voltage Range 2.4V to 91V 3 Mechanical Data: 1 *Case : SOT-23 Molded plastic *Terminals: Solderable per MIL-STD-202, Method 208


    Original     		PDF MMBZ5221B 225mw OT-23 MIL-STD-202, 008grams OT-23 Z5267BT Z5270BT

    Z5228B

    Abstract: No abstract text available
    Text: MMBZ5221B Series Surface Mount Zener Diodes * “G” Lead Pb -Free SMALL SIGNAL ZENER DIODES 225m WATTS Features: *225mw Power Dissipation *Ideal for Surface Mountted Application *Zener Breakdown Voltage Range 2.4V to 91V 3 Mechanical Data: 1 *Case : SOT-23 Molded plastic


    Original     		PDF MMBZ5221B 225mw OT-23 MIL-STD-202, 008grams OT-23 Z5267BT Z5270BT Z5228B

    transistor m4a

    Abstract: No abstract text available
    Text: DATA SHEET MMBT4401 NPN GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE 40 Volts POWER 225mW FEATURES NPN epitaxial silicon, planar design Collector-emitter voltage VCE = 40V Collector current IC = 600mA Both normal and Pb free product are available : Normal : 80~95 % Sn, 5~20 % Pb


    Original     		PDF MMBT4401 225mW 600mA OT-23 transistor m4a

    LBZX84C20LT1

    Abstract: LBZX84C3V0LT1 LBZX84C16LT1 2J225 LBZX84C7V5LT1
    Text: LESHAN RADIO COMPANY, LTD. SEMICONDUCTOR TECHNICAL DATA LBZX84C2V4LT1 SERIES 225mW SOT-23 225 mW SOT-23 Zener Voltage Regulator Diodes GENERAL DATA APPLICABLE TO ALL SERIES IN THIS GROUP 3 Cathode Zener Voltage Regulator Diodes 1 Anode 3 1 2 SOT– 23 TO–236AB


    Original     		PDF LBZX84C2V4LT1 225mW OT-23 236AB) OT-23 LBZX84C20LT1 LBZX84C3V0LT1 LBZX84C16LT1 2J225 LBZX84C7V5LT1

    Untitled

    Abstract: No abstract text available
    Text: 2SA1298LT1 PNP EPITAXIAL SILICON TRANSISTOR SOT-23 3 2W OUTPUT AMPLIFIER OF PORTABLE 1 RADIOS IN CLASS B PUSH-PULL OPERATION 2 Complement to MMPT2SC3265LT1 1. 1.BASE 2.EMITTER 3.COLLECTOR Collector-current:Ic=-500mA High Total Power Dissipation:Pc=225mW 0.4


    Original     		PDF 2SA1298LT1 OT-23 MMPT2SC3265LT1 -500mA 225mW -100uA -50mA -500mA,

    2SC2786

    Abstract: S9015LT1
    Text: 2SC2786 NPN EPITAXIAL SILICON TRANSISTOR PRE-AMPLIFIER,LOW LEVEL&LOW NOISE * Complement to S9015LT1 * Collector Current: Ic= 100mA * Collector-Emitter Voltage:Vce= 45V * High Total Power Dissipation:Pc=225mW * High Hfe And Good Linearity 1. ABSOLUTE MAXIMUM RATINGS at Ta=25


    Original     		PDF 2SC2786 S9015LT1 100mA 225mW 100mA 062in 300uS 2SC2786 S9015LT1

    marking 12Y

    Abstract: 12y sot 23 2SA1037 2SC27 2SC2712 Collector 5v npn TRANSISTOR 12Y marking
    Text: 2SC2712 NPN EPITAXIAL SILICON TRANSISTOR SOT-23 3 PRF-AMPLIFIER,LOW LEVEL&LOW NOISE 1 Complemen to 2SA1037 Collector-current:Ic=100mA 2 Collector-Emiller Voltage:V CE =45V 1. 1.BASE 2.EMITTER 3.COLLECTOR High Totalpower Dissipation Pc=225mW High life And Good Linearity


    Original     		PDF 2SC2712 OT-23 2SA1037 100mA 225mW 100mA, 100MHz 300uS 2SC27 marking 12Y 12y sot 23 2SA1037 2SC2712 Collector 5v npn TRANSISTOR 12Y marking

    Untitled

    Abstract: No abstract text available
    Text: S9012LT1 SEMICONDUCTOR Shandong Yiguang Electronic Joint stock Co., Ltd * * * TECHNICAL DATA PNP EPITAXIAL SILICON TRANSISTOR Complement to S9013LT1 Package:SOT-23 Collector Current :Ic= -500mA High Total Power Dissipation :Pc=225mW ABSOLUTE MAXIMUM RATINGS at Ta=25℃


    Original     		PDF S9012LT1 S9013LT1 OT-23 -500mA 225mW -50mA -500mA

    "SIGNAL DIODE"

    Abstract: BAS116
    Text: BAS116 225mW SMD Switching Diode Small Signal Diode SOT-23 F A Features —Low power loss, high current capability, low VF B —Surface device type mounting E —Moisture sensitivity level 1 —Matte Tin Sn lead finish with Nickel(Ni) underplate C G D —Pb free version and RoHS compliant


    Original     		PDF BAS116 225mW OT-23 MIL-STD-202, "SIGNAL DIODE" BAS116

    S9014L

    Abstract: S9014LT1 sot-23 MARKING O7 S9014LT1-L
    Text: S9014LT1 SEMICONDUCTOR Shandong Yiguang Electronic Joint stock Co., Ltd TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR PRE-AMPLIFIER,LOW LEVEL&LOW NOISE * Complement to S9015LT1 * Collector Current: Ic= 100mA * Collector-Emitter Voltage:Vce= 45V * High Total Power Dissipation:Pc=225mW


    Original     		PDF S9014LT1 S9015LT1 100mA 225mW OT-23 100mA 062in 300uS S9014LT1 S9014L sot-23 MARKING O7 S9014LT1-L

    DTA144EE

    Abstract: No abstract text available
    Text: D TA 1 44 EE PNP EPITAXIAL SILICON TRANSISTOR SOT-23 3 2W OUTPUT AMPLIFIER OF PORTABLE 1 RADIOS IN CLASS B PUSH-PULL OPERATION 2 1. Collector-current:Ic=-500mA High Total Power Dissipation:Pc=225mW 1.BASE 2.EMITTER 3.COLLECTOR 0.4 0.95 0.95 2.9 1.9 2.4 1.3


    Original     		PDF OT-23 -500mA 225mW -50mA -500mA, -10mA DTA144EE

    9013G

    Abstract: 9012 transistor sot-23 9012 pnp MMBT9012LT1
    Text: MMBT9012LT1 PNP EPITAXIAL SILICON TRANSISTOR SOT-23 3 1W OUTPUT AMPLIFIER OF PORTABLE 1 RADIOS IN CLASS B PUSH-PULL OPERATION 2 1. Complement to 9013G Collector Current :Ic=-500mA 1.BASE 2.EMITTER 3.COLLECTOR 2.4 1.3 0.4 0.95 0.95 2.9 1.9 High Total Power Dissipation Pc=225mW


    Original     		PDF MMBT9012LT1 OT-23 9013G -500mA 225mW 9013G 9012 transistor sot-23 9012 pnp MMBT9012LT1

    marking 81J

    Abstract: No abstract text available
    Text: SEMICONDUCTOR TECHNICAL DATA MMBZ5221BLT1 SERIES 225mW SOT-23 225 mW SOT-23 Zener Voltage Regulator Diodes GENERAL DATA APPLICABLE TO ALL SERIES IN THIS GROUP 3 Cathode Zener Voltage Regulator Diodes 1 Anode 3 1 2 MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES: 260°C for 10 seconds


    Original     		PDF MMBZ5221BLT1 225mW OT-23 236AB) OT-23 marking 81J

    Untitled

    Abstract: No abstract text available
    Text: BZX84C2V4 Series Surface Mount Zener Diodes SMALL SIGNAL ZENER DIODES 225m WATTS * “G” Lead Pb -Free Features: *225mw Power Dissipation *Ideal for Surface Mountted Application *Zener Breakdown Voltage Range 2.4V to 75V 3 1 Mechanical Data: 2 SOT-23 *Case : SOT-23 Molded plastic


    Original     		PDF BZX84C2V4 225mw OT-23 OT-23 MIL-STD-202, 008grams

    TRANSISTOR m3a

    Abstract: No abstract text available
    Text: MMBT4403 PNP GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE 40V POWER 225mW FEATURES 0.120 3.04 0.110(2.80) PNP epitaxial silicon, planar design Collector-emitter voltage VCE = -40V Collector current IC =-600mA 0.056(1.40) Complimentary (NPN) device: MMBT4401


    Original     		PDF MMBT4403 -600mA MMBT4401 2002/95/EC IEC61249 225mW OT-23 MIL-STD-750, TRANSISTOR m3a

    BZX84C12LT1

    Abstract: BZX84C2V4LT1 BZX84C2V7LT1 BZX84C3V0LT1 BZX84C3V3LT1 BZX84C3V6LT1 BZX84C3V9LT1 BZX84C4V3LT1 BZX84C4V7LT1 BZX84C5V1LT1
    Text: LESHAN RADIO COMPANY, LTD. SEMICONDUCTOR TECHNICAL DATA BZX84C2V4LT1 SERIES 225mW SOT-23 225 mW SOT-23 Zener Voltage Regulator Diodes GENERAL DATA APPLICABLE TO ALL SERIES IN THIS GROUP 3 Cathode Zener Voltage Regulator Diodes 1 Anode 3 1 2 CASE 318–07, STYLE8


    Original     		PDF BZX84C2V4LT1 225mW OT-23 236AB) OT-23 BZX84C12LT1 BZX84C2V4LT1 BZX84C2V7LT1 BZX84C3V0LT1 BZX84C3V3LT1 BZX84C3V6LT1 BZX84C3V9LT1 BZX84C4V3LT1 BZX84C4V7LT1 BZX84C5V1LT1

    Untitled

    Abstract: No abstract text available
    Text: BAT54TW / ADW / CDW / SDW / DW SURFACE MOUNT SCHOTTKY DIODE ARRAYS 30 Volts VOLTAGE 225mWatts POWER 0.087 2.20 0.074(1.90) 0.010(0.25) 0.087(2.20) 0.078(2.00) Isolated diode arrays for significant board space savings Surface mount package ideally suited for automatic insertion


    Original     		PDF BAT54TW 225mWatts 2011/65/EU IEC61249 OT-363 MIL-STD-750, 2011-REV

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET MMBD6100 SURFACE MOUNT SWITCHING DIODES 225mWatts POWER 80 Volts VOLTAGE FEATURES • Dual, common cathode configuration • Very fast reverse recovery Trr< 2.0ns typical • Low capacitance ( < 2.5pF @ 0V) • Surface mount package ideally suited for anuomatic insetion


    Original     		PDF MMBD6100 225mWatts 2011/65/EU IEC61249 OT-23 MIL-STD-750

    BAS21C

    Abstract: BAS21 BAS21A BAS21S BAS21 SOT23
    Text: BAS21 / A / C / S 225mW SMD Switching Diode Small Signal Diode SOT-23 F A Features B E —Fast switching speed —Surface device type mounting C —Moisture sensitivity level 1 G D —Matte Tin Sn lead finish with Nickel(Ni) underplate —Pb free version and RoHS compliant


    Original     		PDF BAS21 225mW OT-23 OT-23 MIL-STD-202, 100mA 200mA BAS21C BAS21A BAS21S BAS21 SOT23

    adsp1016a

    Abstract: ADSP-1016ATE ADSP-1016A ADSP1016ASE MPY016HJ1 d64a sp1016 MPY016HJ ADSP-1016ASE ADSP-1016ATE/883B
    Text: □ ANALOG DEVICES 16 x 16-Bit CMOS Multiplier ADSP-1016A FEATURES 16 x 16-Bit Parallel Multiplication 70ns Multiplication Time 225mW Power Dissipation with TTL-Compatible CMOS Technology Twos-Complement, Unsigned-Magnitude and MixedMode Data Formats Available in Hermetically Sealed 64-Pin DIP,


    OCR Scan     		PDF 16-Bit ADSP-1016A 225mW 64-Pin 68-Pln 64-Pln 68-Contact MIL-STD-883, ADSP-1016 adsp1016a ADSP-1016ATE ADSP-1016A ADSP1016ASE MPY016HJ1 d64a sp1016 MPY016HJ ADSP-1016ASE ADSP-1016ATE/883B

    Untitled

    Abstract: No abstract text available
    Text: PART NUMBER: 225MWR050K METALLIZED POLYESTER WRAP AND FILL AXIAL LEAD CAPACITORS ^ fc Parts are RoHS com pliant Date code w hen parts became RoHS: 14 ELECTRICAL SPECIFICATIONS Capacitance: 2.2 uF Tolerance: -10 % . +10 % Dissipation Factor: 0.01 Max at 1000 Hz and 25°C


    OCR Scan     		PDF 225MWR050K

    marking djw

    Abstract: No abstract text available
    Text: |U |IC =R O N MT4C4005 1 MEG x 4 DRAM FAST PAGE MODE, WRITE-PER-BIT FEATURES • Industry standard x4 pinout, timing, functions and packages • High performance, CMOS silicon gate process • Single +5V±10% power supply • Low power, 3mW standby; 225mW active, typical


    OCR Scan     		PDF MT4C4005 225mW 1024-cycle 20-Pin marking djw