22KFL Search Results

Contextual Info: SANYO SEMICONDUCTOR FC112 CORP SEE D 7 eH 7 0 7 b 0 0 0 7 3 0 2 1 T -3 S -II # N P N Epitaxial Planar S ilico n C o m p o site Transistor 2066 Switching Applications 3080 with Bias Resistances R1=22kQ, R2=22kO F ea tu res On-chip bias resistors (Ri = 22kQ,R2= 22kfl)

0007G

Abstract: KSR1103 KSR2103 Transistor z1 rp35 driver
Contextual Info: S A M S U N G SEMICONDUCTOR INC rp35-|V IME D KSR1103 | ì'ifc.MlMfi 0007G43 1 | NPN EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION Bias Resistor Built In • Switching Circuit, Inverter; Interface circuit Driver circuit • Built in bias Resistor (R,=22KÍÍ, R,=22Kfl)

Contextual Info: SIEMENS BCR 191S PNP Silicon Digital Transistor Array >Switching circuit, inverter, interface circuit, driver circuit >Two galvanic internal isolated Transistors in one package >Built in bias resistor (R1=22kfl, R2=22kfl) WOs Q62702-C2418 1=E1 2=B1 3=C2

Contextual Info: KSR2011 PNP EPITAXIAL SILICON TRANSISTO R SWITCHING APPLICATION Bias Resistor Built In • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R*22kfl) • Complement to K SR 1011 ABSOLUTE MAXIMUM RATINGS (TA«25t:)

Contextual Info: I IME D I ^SAMSUNG S E M ICON DUC TOR INC KSR2203 I 000713*1 0 PNP EPITAXIAL SILICON TRANSISTOR - CT=37- >3 SWITCHING APPLICATION Bias Resistor Built In • Switching circuit, Inverter, Interface circuit Driver circuit • Built in bias Resistor(R =22K0, R1=22Kfl)

3079-2

Contextual Info: Ordering number: EN 3079 No.3079 SMiVO, F C l l l PNP Epitaxial Planar Silicon Composite Transistor i Switching Applications Features • On-chip bias resistors Ri = 22kfl,R2 = 22kQ • Composite type with 2 transistors contained in the CP package currently in use, improving the

TRANSISTOR 2067

Contextual Info: SANYO S E MI CO ND UCTOR CÔRP SHE D 7‘ =H707b 0 00 737Ô T FC110 T-35-H # N PN Epitaxial Planar Silicon C om posite Transistor 2067 Switching Applications with Bias Resistances R 1=22kfl, R2=22kO 3078 F e a tu re s • On-chip bias resistors (Rj = 22k£l,R2= 22k£i)

Contextual Info: SIEMENS BCR 141 NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor Ri=22kfl, R2=22 kQ Pin Configuration BCR 141 WDs 1= B II co Q62702-C2258 Package O Marking Ordering Code LU II evi

Contextual Info: SANYO SEMICONDUCTOR FC111 CORP 22E D 7Tî707t Q0D73Ô0 ñ T-37-/3 # PNP Epitaxial Planar Silicon Com posite Transistor 2066 Switching Applications 3079 with Bias Resistances R1=22kfl, R2=22kO Features • On-chip bias resistors (Ri = 22kfl,R2= 22kQ) • Composite type with 2 transistors contained in the CP package currently in use, improving the

Contextual Info: Ordering num ber:EN3 0 7 8 SANYO i FG 110 No.3078 NPN Epitaxial Planar Silicon Composite Transistor Switching Applications Features • On-chip bias resistors Ri = 22kfl,R2 = 22kfl • Composite type with 2 transistors contained in the CP package currently in use, improving the

Contextual Info: KSR2203 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION Bias Resistor Built In • Switching circuit. Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (Ri =22kfl, Rj»22kQ) • Complement to KSR1203 A B S O LU T E MAXIMUM (RATINGS (TA=25t:)

Contextual Info: KSR1103 NPN EPITAXIAL SILICON TRAN SISTO R SW ITCHING APPLICATION Bias Resistor Built in • Switching circuit, Inverter, Interface circuit. Driver Circuit • Built in bias Resistor (R t =22kfl, R 2=22]iii) • Complement to KSR2103 ABSO LU TE MAXIMUM RATINGS (T a= 2 5 'C )

Contextual Info: S IE M E N S BCR 191 PNP Silicon Digital Transistor * Switching circuit, inverter, interface circuit, driver circuit * Built in bias resistor R1=22k£i, R2=22kfl Type Marking Ordering Code Pin Configuration BCR 191 WOs Q62702-C2264 1=B Package 2=E 3=C SOT-23

Contextual Info: SIEMENS BCR 196 PNP Silicon Digital Transistor >Switching circuit, inverter, interface circuit, driver circuit >Built in bias resistor Ri=47k£2, R2=22kfl Marking Ordering Code Pin Configuration BCR 196 WXs 1 =B Package UJ II <M UPON INQUIRY o II CO Type

727 Transistor power values

Contextual Info: SIEMENS BCR191S PNP Silicon Digital Transistor Array >Switching circuit, inverter, interface circuit, driver circuit • Two galvanic internal isolated Transistors in one package »Built in bias resistor (R1=22kß, R2=22kfl) Type BCR191S Marking Ordering Code Pin Configuration

KSR1011

Abstract: KSR2011
Contextual Info: SAMSUNG IN C T - 3 5 ^ j l 4 E SEM ICONDUCTOR KSR1011 D | 7 ^ 4 1 4 2 0007035 T NPN EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION Bias Resistor Built In TO-92 • S w itching Circuit, Inverter, interface circuit Driver circuit • B uilt in bias Resistor (R =22Kfl)

resistor

Abstract: KSR1203 KSR2203
Contextual Info: ^SAMSUNG S E M IC O N D U C TOR IME INC KSR2203 D I 0 0 0 7 1 3 *1 I I PNP EPITAXIAL SILICON TRANSISTOR - CT=37- >3 SWITCHING APPLICATION Bias Resistor Built In • Switching circuit, Inverter, Interface circuit Driver circuit • Built in bias Resistor(R =22K0, R1=22Kfl)

Contextual Info: SIEMENS BCR 146 NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R-|=47kfl, R2=22kfl BCR 146 WLs 1 =B Q62702-C2260 Package 2=E It Pin Configuration CO Marking Ordering Code o Type

3450K

Abstract: 3850K NTCCF2012
Contextual Info: Sensors SURFACE MOUNTABLE CHIP TYPE FEATURES • Reversible. • Automatic mounting possible with the use of bulks, magazines or tapes. • Cost reduction of circuits by high-density packaging is possible. NTCCS SÉRIES FOR REFLOW SOLDERING CHARACTERISTICS

TC9187AN

Abstract: TC9187 TC9187AF
Contextual Info: T -77-Z I ELECTRONIC VOLUME LSI FOR 7-BAND GRAPHIC EQUALIZER. TC9187AN/AF is a system LSI, in which seven circuits of electronic volume for graphic equalizer are assembled into signal chip. . Each L 0'1 or RC ^ contains electronic volume for graphic equalizer of seven circuits.

Contextual Info: H UNITRODE Low Power Current Mode Push-Pull PWM FEATURES PRELIMINARY DESCRIPTION 130 iA Typical Starting Current The UCC3808 is a family of BiCMOS push-pull, high-speed, low power, pulse width modulators. The UCC3808 contains all of the control and drive circuitry required for off-line or DC-to-DC fixed frequency current-mode

colpitts oscillator using 741

Abstract: SFG455A3 murata 455KHz ceramic filter TOKO 455KHz crystal filter TOKO 455KHz ceramic filter TOKO 455KHz filter Signetics NE602 SA615 TOKO 303LN murata SFG455A3 455KHz ceramic filter
Contextual Info: NAPC/PHILIPS SEMICOND b?E T> m b b 5 3 t124 0 0 3 3 7 3 0 0 T3 * S I C 3 Philips Semiconductors RF Communications Products Product specification High performance low power mixer FM IF system DESCRIPTION FEATURES The NE/SA615 is a high performance monolithic low-power FM IF system

SAA7345

Abstract: tda 9344 CM 4200 JIS-C-6560 LTU 455 E 2 metal detector diagram PI QFP64 SAA7376 TDA1301 TDA1301T
Contextual Info: Philips Semiconductors Preliminary specifications Digital servo processor and Compact Disc decoder CD7 7.13 7.13.1 7.13.2 7.13.3 7.13.4 7.13.5 7.13.6 7.13.7 7.13.8 7.13.9 7.13.10 7.13.11 7.14 7.14.1 7.14.2 7.14.3 CONTENTS 1 FEA TU RES 2 GEN ERAL DESCRIPTION

DS 09 1007 1012 D4

Abstract: 901 u 620 tg CW03 QPSK qam trans Modulator block diagram
Contextual Info: HSP50215 Semiconductor D a ta S h e e t J a n u a ry 1999 F ile N u m b e r 4 3 4 6 .4 Digital UpConverter Features The HSP50215 Digital UpConverter DUC is a QASK/FM modulator/FDM upconverter designed for high dynamic range applications such as cellular basestations. The DUC combines