22MARCH Search Results

PN3563 equivalent

Abstract: 2N5770 2n918 transistor 2n918 die 2N2857 2N5179 2N918 BFY90 CMPT918 CP317
Contextual Info: PROCESS CP317 Small Signal Transistor NPN - RF Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 14.5 x 14.5 MILS Die Thickness 9.0 MILS Base Bonding Pad Area 2.4 x 2.2 MILS Emitter Bonding Pad Area 2.4 x 2.2 MILS Top Side Metalization Al - 30,000Å

CP318V

Abstract: MPS455
Contextual Info: PROCESS CP318V Small Signal Transistor NPN - High Voltage Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 26 x 26 MILS Die Thickness 7.1 MILS ± 0.6 MILS Base Bonding Pad Area 5.5 x 5.5 MILS Emitter Bonding Pad Area 5.5 x 5.5 MILS Top Side Metalization

CP394R

Abstract: CEDM7004
Contextual Info: PROCESS CP394R Small Signal MOSFET Transistor N-Channel Enhancement-Mode Transistor Chip PROCESS DETAILS Die Size 15.7 x 15.7 MILS Die Thickness 3.9 MILS Gate Bonding Pad Area 3.9 x 3.9 MILS Source Bonding Pad Area 9.1 x 8.1 MILS Top Side Metalization Al-Si - 35,000Å

CP353V

Abstract: CZT853
Contextual Info: PROCESS CP353V Small Signal Transistors NPN - High Current Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 66 x 66 MILS Die Thickness 7.1 MILS Base Bonding Pad Area 7.9 x 7.9 MILS Emitter 1 Bonding Pad Area 7.9 x 9.5 MILS Emitter 2 Bonding Pad Area

CPD05

Abstract: 1N4001 1N3611 1N3614 1N4007 1N4245 1N4249 1N5059 1N5062 1N5391
Contextual Info: PROCESS CPD05 General Purpose Rectifier 1 Amp Glass Passivated Rectifier Chip PROCESS DETAILS Process GLASS PASSIVATED MESA Die Size 51 x 51 MILS Die Thickness 10.2 MILS Anode Bonding Pad Area 36 x 36 MILS Top Side Metalization Ni/Au - 5,000Å/2,000Å Back Side Metalization

1N5400

Abstract: 1N5408 1N5550 1N5554 1N5624 1N5627 CMR3-02 CPD06
Contextual Info: PROCESS CPD06 General Purpose Rectifier 3 Amp Glass Passivated Rectifier Chip PROCESS DETAILS Process GLASS PASSIVATED MESA Die Size 89 x 89 MILS Die Thickness 10.2 MILS Anode Bonding Pad Area 66 x 66 MILS Top Side Metalization Ni/Au - 5,000Å/2,000Å Back Side Metalization

2N2484

Abstract: CMPT2484 CMPT5088 CMPT5089 CMPT6428 CMPT6429 CP188
Contextual Info: PROCESS CP188 Small Signal Transistor NPN - Low Noise Amplifier Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 14.6 x 14.6 MILS Die Thickness 9.0 MILS Base Bonding Pad Area 3.9 x 3.9 MILS Emitter Bonding Pad Area 5.5 x 5.5 MILS Top Side Metalization

"Darlington Transistor"

Abstract: CJD127 CP630 CZT127
Contextual Info: PROCESS CP630 Power Transistor PNP - Silicon Darlington Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 80 x 80 MILS Die Thickness 8.0 MILS Base Bonding Pad Area 18 x 27 MILS Emitter Bonding Pad Area 34 x 34 MILS Top Side Metalization Al - 30,000Å

CJD42C

Abstract: CP611 TIP42C r5 transistor
Contextual Info: PROCESS CP611 Power Transistor PNP - Amp/Switch Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 80 x 99 MILS Die Thickness 12.5 ± 1 MILS Base Bonding Pad Area 12 x 32 MILS Emitter Bonding Pad Area 13 x 46 MILS Top Side Metalization Al - 30,000Å

1N5806

Abstract: 1N5802 CMR3U-01 CPD17 UES1101 UES1106
Contextual Info: PROCESS CPD17 Ultra Fast Rectifier 3 Amp Glass Passivated Rectifier Chip PROCESS DETAILS Process GLASS PASSIVATED MESA Die Size 88 x 88 MILS Die Thickness 14 MILS Anode Bonding Pad Area 69 x 69 MILS Top Side Metalization Ni/Au - 5,000Å/2,000Å Back Side Metalization

CMLM2205

Abstract: CMLT2207 CMKT2207 CMLT2222A cp191v 699 NPN
Contextual Info: PROCESS CP191V Small Signal Transistor NPN - Amp/Switch Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 16.5 x 16.5 MILS Die Thickness 7.1 MILS Base Bonding Pad Area 3.5 x 4.3 MILS Emitter Bonding Pad Area 3.5 x 4.3 MILS Top Side Metalization

CP312

Abstract: CZT3120 chip die npn transistor
Contextual Info: PROCESS CP312 Power Transistor NPN - Amp/Switch Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 70 x 70 MILS Die Thickness 9.0 MILS Base Bonding Pad Area 11.4 x 18.1 MILS Emitter Bonding Pad Area 13.8 x 23.6 MILS Top Side Metalization Al - 30,000Å

LWH1035N

Abstract: STCF01 STPS1L40M VLF5014A
Contextual Info: AN2243 Application note Step up converter for camera flash light Introduction STCF01 is a dedicated IC to drive up to four white LEDs with constant current in camera flash for cellular phones. It provides up to 300mA over an input voltage range of 2.6V to 5.5V. A high

Contextual Info: PROCESS CPD77X Schottky Rectifier 3 Amp Schottky Rectifier Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 61 x 61 MILS Die Thickness 5.9 MILS Anode Bonding Pad Area 55 x 55 MILS Top Side Metalization Ti/Ag - 2,500Å/30,000Å Back Side Metalization

CMPZ5267B

Contextual Info: PROCESS CPZ28 Zener Diode 0.5 Watt Zener Diode Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 13 x 13 MILS Die Thickness 7.8 MILS Anode Bonding Pad Area 7.0 x 7.0 MILS Top Side Metalization Ti/Al - 13,000Å Back Side Metalization Au-As - 13,000Å GEOMETRY

Contextual Info: PROCESS CPD87R Schottky Diode Low Leakage Schottky Diode Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 14.6 x 14.6 MILS Die Thickness 3.9 MILS Anode Bonding Pad Area 11.8 x 11.8 MILS Top Side Metalization Al - 30,000Å Back Side Metalization Au - 12,000Å

Contextual Info: CMLT5078E NPN/PNP CMLT5087E PNP/PNP CMLT5088E NPN/NPN ENHANCED SPECIFICATION SURFACE MOUNT SILICON DUAL TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLT5078E, CMLT5087E, and CMLT5088E are surface mount silicon transistors with enhanced specifications

mje182 equivalent

Abstract: MJE182 cp208 transistor CR NPN CJD31C TIP31C
Contextual Info: PROCESS CP208 Power Transistor NPN - Amp/Switch Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 66 x 66 MILS Die Thickness 12.5 ± 1.0 MILS Base Bonding Pad Area 12 x 24 MILS Emitter Bonding Pad Area 11 x 14 MILS Top Side Metalization Al - 50,000Å

CP710

Abstract: CMPTA94 CXTA94 CZTA94 MPSA94
Contextual Info: PROCESS CP710 Small Signal Transistor PNP - High Voltage Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 26 x 26 MILS Die Thickness 9.0 MILS Base Bonding Pad Area 6.1 x 4.9 MILS Emitter Bonding Pad Area 5.2 x 5.2 MILS Top Side Metalization

2N2907A die

Abstract: 2N2907A PN2907A equivalent 2N2907A 2N2905A CMPT2907A CMST2907A CP591V CXT2907A CZT2907A
Contextual Info: PROCESS CP591V Small Signal Transistor PNP - Amp/Switch Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 19 x 19 MILS Die Thickness 7.1 MILS Base Bonding Pad Area 3.5 x 4.3 MILS Emitter Bonding Pad Area 3.5 x 4.5 MILS Top Side Metalization

diode S 335

Abstract: 1n4148 die 1n4148 1n4148 die chip 1N4154 1N4448 1N4454 1N914 DIODE CHIP 1N4148 CMPD2836
Contextual Info: PROCESS CPD83V Switching Diode High Speed Switching Diode Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 11 x 11 MILS Die Thickness 7.1 MILS Anode Bonding Pad Area 3.35 x 3.35 MILS Top Side Metalization Al - 30,000Å Back Side Metalization Au-As - 13,000Å

CPD73

Contextual Info: PROCESS CPD73 Bridge Rectifier Monolithic Quad Diode Bridge Chip PROCESS DETAILS Die Size 25 x 25 MILS Die Thickness 6.0 MILS Bonding Pad Area 1 +DC 3.0 x 3.0 MILS Bonding Pad Area 2 (AC) 3.0 x 7.0 MILS Bonding Pad Area 3 (-DC) 3.0 x 4.0 MILS Bonding Pad Area 4 (AC)

1N5807

Abstract: 1N5811 CPD18 CUDD8-02 UES1301 UES1306 UES1401 UES1403
Contextual Info: PROCESS CPD18 Ultra Fast Rectifier 8 Amp Glass Passivated Rectifier Chip PROCESS DETAILS Process GLASS PASSIVATED MESA Die Size 100 x 100 MILS Die Thickness 14 MILS Anode Bonding Pad Area 78 x 78 MILS Top Side Metalization Ni/Au - 5,000Å/2,000Å Back Side Metalization

DIODE 720

Abstract: "Schottky Diode" DIODE R3 CPD48V high current schottky diode
Contextual Info: PROCESS CPD48V Schottky Diode High Current Schottky Diode Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 13.8 x 13.8 MILS Die Thickness 7.1 MILS Anode Bonding Pad Area 9.0 x 9.0 MILS Top Side Metalization Al - 30,000Å Back Side Metalization Au - 12,000Å