22OCT01 Search Results

Contextual Info: Si6880EDQ New Product Vishay Siliconix N-Channel 1.8-V G-S Battery Switch, ESD Protection PRODUCT SUMMARY VDS (V) 20 FEATURES D TrenchFETr Power MOSFET D ESD Protected: 4000 V D Common Drain rDS(on) (Ω) ID (A) 0.018 @ VGS = 4.5 V 7.5 0.022 @ VGS = 2.5 V

IC 566 vco

Abstract: power tr unit j122 J122 transistor transistor j122 MLF32 PCS30 T0345 56638 Infineon 77 GHz VCO
Contextual Info: Features • • • • • • Supply-voltage range 2.7 V to 3.3 V Single sideband upconverters save filter cost Chosen architecture needs only one synthesizer 100 dB control range of IF & RF -VGAs 105 mA current consumption Programmable output power: PCS band: 8 dBm @ 54 dBc APCR, cellular band: 9 dBm

Si7404DN

Contextual Info: Si7404DN New Product Vishay Siliconix N-Channel 30-V D-S Fast Switching MOSFET FEATURES PRODUCT SUMMARY D TrenchFETr Power MOSFET D New Low Thermal Resistance PowerPAKt Package with Low 1.07-mm Profile VDS (V) rDS(on) (W) ID (A) 0.013 @ VGS = 10 V 13.3 30

PLCC

Abstract: PLCC-40 plcc-68 plcc 68
Contextual Info: 28 pins PLCC Plastic Lead Chip Carrier PLCC Package Outlines Code: SI Date: 12/05/95 – 22-Oct-01 1 PLCC 40 pins PLCC Code: SL Date: 12/12/95 2 – 22-Oct-01 52 pins PLCC Code: S3 Date: 13/02/01 3 PLCC – 22-Oct-01 PLCC 68 pins PLCC Code: SM Date: 22/03/00

DIL24

Abstract: DIL package DIL-24
Contextual Info: 24 pins PDIL Dual In Line DIL Package Outlines Code: 3Z Date: 22/10/93 – 22-Oct-01 1 DIL 24 pins CDIL with window Code: CZ Date: 21/08/00 2 – 22-Oct-01 40 pins PDIL Code: 3C Date: 09/01/98 3 DIL – 22-Oct-01

Contextual Info: Tape Information Vishay Siliconix SSOP: 28−LEAD See Note 6 0.30"0.05 Ĭ1.5 2.0"0.1 See Note 1 0.1 *0.0 4.0 A E 2.3 F See Note 6 W B0 B B SECTION A-A A Ĭ1.50 MIN A0 12.0 R 0.5 TYP 5.82 K1 K0 0.6 R 0.3 MAX SECTION B-B NOTES: 1. 10 sprocket hole pitch cumulative tolerance "0.2.

6822

Abstract: transistor 6822 transistors 6822 VC-800
Contextual Info: Product Data Sheet VC-800 Voltage Controlled Crystal Oscillator Features • Worlds Smallest VCXO, 5.0 x 3.2 x 1.5 mm • High Frequencies to 51.84 MHz • 5 or 3.3 V operation • Linearity ≤10% • Tri-State Output • Low jitter < 6ps rms • VCXO with CMOS outputs

SI7415DN

Contextual Info: Si7415DN New Product Vishay Siliconix P-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.065 @ VGS = –10 V –5.7 0.110 @ VGS = –4.5 V –4.4 D TrenchFETr Power MOSFET D New PowerPAKt Package – Low Thermal Resistance, RthJC

CMOS Single Chip 8-Bit Microcontrollers

Abstract: T83C5121 EEPROM-AT24C128 80C51 ISO7816 PLCC52 R232 SSOP24 T85C5121 T89C5121
Contextual Info: 1. Features • 80C51 core • • • • • • • • • • • • • • • • • • – 12 or 6 clocks per instruction X1 and X2 modes – 256 bytes scratchpad RAM – Dual Data Pointer – Two 16-bit timer/counters: T0 and T1 T83C5121 with 16 Kbytes Mask ROM

Contextual Info: PHR Vishay Sfernice Very High Precision, Very High Stability Thin Film Chip Resistors FEATURES For low noise and precision applications, superior stability, low temperature coefficient of resistance, and low voltage coefficient, VISHAY SFERNICE’s precision thin film wraparound

U4793B

Contextual Info: U4793B Overload Monitoring with Resistive Load, VT = 44.5 mV Description The bipolar IC U4793B is designed to monitor overload or a short circuit in automotive or industrial applications. The threshold is tied to V4,6 = VS – VT where VT = 44.5 mV. It is independent of the supply voltage, VS.

capacitor cdm 500

Abstract: VC800A
Contextual Info: Product Data Sheet VC-800 Voltage Controlled Crystal Oscillator Features • Worlds Smallest VCXO, 5.0 x 3.2 x 1.5 mm • High Frequencies to 51.84 MHz • 5 or 3.3 V operation • Linearity ≤10% • Tri-State Output • Low jitter < 6ps rms • VCXO with CMOS outputs

Contextual Info: Tape Information Vishay Siliconix TO−252 DPAK (T1 METHOD) T H See Note 1 G J See Note 6 E R O D See Note 6 C B A F See Note 1 A M K Section A-A Direction of Flow Package Orientation NOTES: 1. 10 sprocket hole pitch cumulative tolerance "0.2. 2. Camber not to exceed 1 mm in 100 mm.

SUB50N04-07T

Contextual Info: SPICE Device Model SUB50N04-07T Vishay Siliconix N-Channel 40-V D-S MOSFET with Sensing Diode CHARACTERISTICS • N- and P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

DG3000

Abstract: S0476
Contextual Info: DG3000 New Product Vishay Siliconix Low-Voltage Single SPDT MICRO FOOTtAnalog Switch FEATURES BENEFITS APPLICATIONS D MICRO FOOT Chip Scale Package 1.07 x 1.57 mm D Low Voltage Operation (1.8 V to 5.5 V) D Low On-Resistance - rDS(on): 1.4 W D Fast Switching - tON : 24 ns, tOFF: 9 ns

Si4866DY

Contextual Info: Si4866DY New Product Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET FEATURES D TrenchFETr Power MOSFETS D PWM Optimized for High Efficiency D Low Output Voltage PRODUCT SUMMARY VDS V 12 rDS(on) (W) ID (A) 0.0055 @ VGS = 4.5 V 17 0.008 @ VGS = 2.5 V

VC-800

Contextual Info: Product Data Sheet VC-800 Voltage Controlled Crystal Oscillator Features • Worlds Smallest VCXO, 5.0 x 3.2 x 1.5 mm • High Frequencies to 51.84 MHz • 5 or 3.3 V operation • Linearity ≤10% • Tri-State Output • Low jitter < 6ps rms • VCXO with CMOS outputs

Contextual Info: 4 TH IS DRAWING P RELEASED FOR P U B L I C A T IO N IS UNPUBLISHED. COPYRIGHT ,1 9 LOC ALL RIGHTS RESERVED. BY AMP INCORPORATED. 19 2 3 DIST CE r e v is io n 16 DE SC RI PT IO N LTR REV 4 . 3mm 5TRAIN : PER 0A 00-0290-01 DATE DWN APVD 190CT01 DDE 5B R E L I EF

Contextual Info: Tape Information Vishay Siliconix TO−263 D2PAK : 3− AND 5−LEAD See Note 6 Ĭ 1.5 ) 0.1 –0.0 0.30"0.05 See Note 1 2.0"0.1 4.0 A E R 0.3 max 1.0 0.8 (ref) F See Note 6 0.3 B0 W 10.8 K1 K0 A Ĭ 1.50 min 16.0 R 0.5 typ A0 Section A-A NOTES: 1. 10 sprocket hole pitch cumulative tolerance "0.2.