SI4866DY Search Results

Si4866DY

Abstract: Si4866DY-T1-E3
Contextual Info: Si4866DY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS V 12 RDS(on) (Ω) ID (A) 0.0055 at VGS = 4.5 V 17 0.008 at VGS = 2.5 V 14 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFETs

dh 321

Abstract: ceramic capacitor capacitor 1000uf 12v capacitor 1000uf -36v bat54 EMK107BJ104MA MAX1954A bat 54 1R2 DIODE u1 321
Contextual Info: 3V to 3.6V VIN D1 BAT-54 C3 10uF 6V X5R 5 IN BST R1 68k C1 1.8nF 1 HSD 2 COMP U1 MAX1954A C2 180pF DH C5 820uF 6V MB-EXR 10 8 C6 22uF 6V L1 N1 X5R 1.2uH Si4866DY CDEP105-H C4 0.1uF 9 1.2V@7A VOUT LX DL PGND 4 GND FB 6 N2 Si4866DY 7 3 R2 5.11k R4 2.7 C8 1000uF

Contextual Info: Si4866DY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS V 12 RDS(on) (Ω) ID (A) 0.0055 at VGS = 4.5 V 17 0.008 at VGS = 2.5 V 14 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFETs

Contextual Info: Si4866DY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS V 12 RDS(on) (Ω) ID (A) 0.0055 at VGS = 4.5 V 17 0.008 at VGS = 2.5 V 14 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFETs

71719

Abstract: Si4866DY S-60245 17A67
Contextual Info: SPICE Device Model Si4866DY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model Subcircuit Model • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

SI4866DY

Abstract: SI4866DY-T1-E3
Contextual Info: Si4866DY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS V 12 RDS(on) (Ω) ID (A) 0.0055 at VGS = 4.5 V 17 0.008 at VGS = 2.5 V 14 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFETs

PH+71719

Abstract: 71719 Si4866DY
Contextual Info: SPICE Device Model Si4866DY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model Subcircuit Model • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Contextual Info: Si4866DY New Product Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET FEATURES D D D D PRODUCT SUMMARY VDS V 12 rDS(on) (W) ID (A) 0.0055 @ VGS = 4.5 V 17 0.008 @ VGS = 2.5 V 14 TrenchFETr Power MOSFETS PWM Optimized for High Efficiency Low Output Voltage

Si4866DY

Contextual Info: Si4866DY New Product Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET FEATURES D TrenchFETr Power MOSFETS D PWM Optimized for High Efficiency D Low Output Voltage PRODUCT SUMMARY VDS V 12 rDS(on) (W) ID (A) 0.0055 @ VGS = 4.5 V 17 0.008 @ VGS = 2.5 V

7361

Abstract: AN609 Si4866DY
Contextual Info: Si4866DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

71719

Abstract: Si4866DY
Contextual Info: SPICE Device Model Si4866DY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model Subcircuit Model • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

SI4866DY-T1-E3

Abstract: Si4866BDY si4866 SI4866DY RG52
Contextual Info: Specification Comparison Vishay Siliconix Si4866BDY vs. Si4866DY Description: Package: Pin Out: N-Channel, 12-V D-S MOSFET SO-8 Identical Part Number Replacements Si4866BDY-T1-E3 Replaces Si4866DY-T1-E3 Si4866BDY-T1-E3 Replaces Si4866DY-T1 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)

Si4866DY

Contextual Info: Si4866DY New Product Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET FEATURES D D D D PRODUCT SUMMARY VDS V 12 rDS(on) (W) ID (A) 0.0055 @ VGS = 4.5 V 17 0.008 @ VGS = 2.5 V 14 TrenchFETr Power MOSFETS PWM Optimized for High Efficiency Low Output Voltage

Contextual Info: New Product Si4866DY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS V 12 rDS(on) (Ω) ID (A) 0.0055 at VGS = 4.5 V 17 0.008 at VGS = 2.5 V 14 • • • • TrenchFET Power MOSFETS PWM Optimized for High Efficiency

Contextual Info: LM3495 LM3495 Emulated Peak Current Mode Buck Controller for Low Output Voltage Literature Number: SNVS410E LM3495 Emulated Peak Current Mode Buck Controller for Low Output Voltage General Description Features The LM3495 is a PWM buck regulator which implements a

Contextual Info: TPS40007 TPS40009 SLUS589B− NOVEMBER 2003 − REVISED FEBRUARY 2005 LOWĆINPUT HIGHĆEFFICIENCY SYNCHRONOUS BUCK CONTROLLER FEATURES D Operating Input Voltage 2.25 V to 5.5 V D Output Voltage as Low as 0.7 V D 1% Internal 0.7 V Reference D Predictive Gate Drivet N-Channel MOSFET

Contextual Info: TPS40000, TPS40001 TPS40002, TPS40003 TPS40004, TPS40005 SLUS507D − JANUARY 2002 − REVISED NOVEMBER 2005 LOWĆINPUT VOLTAGEĆMODE SYNCHRONOUS BUCK CONTROLLER FEATURES D Operating Input Voltage 2.25 V to 5.5 V D Output Voltage as Low as 0.7 V D 1% Internal 0.7 V Reference

TPS40000

Abstract: TPS40000DGQ TPS40000DGQR TPS40001 TPS40001DGQ TPS40002 TPS40002DGQ TPS40003 TPS40003DGQ
Contextual Info: TPS40000, TPS40001 TPS40002, TPS40003 SLUS507A – JANUARY 2002 – REVISED JUNE 2002 LOWĆINPUT VOLTAGEĆMODE SYNCHRONOUS BUCK CONTROLLER FEATURES D Operating Input Voltage 2.25 V to 5.5 V D Output Voltage as Low as 0.7 V D 1% Internal 0.7 V Reference D Predictive Gate Drivet N-Channel MOSFET

FDS6375

Abstract: CDRH104R-2R5 1N5819HW MIC2193 MIC2193BM NDS8425 Si4403DY Si4866DY R012F
Contextual Info: Application Hint 70 MIC2193 3.3V to 2.5V/5A with Ceramic Cout Application Circuit By Steven Chenetz General Description The MIC2193 is a 400kHz Synchronous Buck controller that uses a P-channel high-side FET. It has the advantage of running at 100% duty cycle high-side Fet

Contextual Info: TPS40007 TPS40009 SLUS589B− NOVEMBER 2003 − REVISED FEBRUARY 2005 LOWĆINPUT HIGHĆEFFICIENCY SYNCHRONOUS BUCK CONTROLLER FEATURES D Operating Input Voltage 2.25 V to 5.5 V D Output Voltage as Low as 0.7 V D 1% Internal 0.7 V Reference D Predictive Gate Drivet N-Channel MOSFET

866K3

Abstract: Si4866DY SLMA002 TPS40007 TPS40007DGQ TPS40007DGQR TPS40009 TPS40009DGQ
Contextual Info: TPS40007 TPS40009 SLUS589B− NOVEMBER 2003 − REVISED FEBRUARY 2005 LOWĆINPUT HIGHĆEFFICIENCY SYNCHRONOUS BUCK CONTROLLER FEATURES D Operating Input Voltage 2.25 V to 5.5 V D Output Voltage as Low as 0.7 V D 1% Internal 0.7 V Reference D Predictive Gate Drivet N-Channel MOSFET

71917

Abstract: level logic mosfet transistor so-8 offline switchmode si9110 siliconix an607 AN607 AN707 SI4406DY PowerPAK SO-8 si2301ds
Contextual Info: AN607 Vishay Siliconix DC-to-DC Design Guide Serge Jaunay, Jess Brown INTRODUCTION Manufacturers of electronic systems that require power conversion are faced with the need for higher-density dc-to-dc converters that perform more efficiently, within a smaller

Contextual Info: TPS40007 TPS40009 SLUS589B− NOVEMBER 2003 − REVISED FEBRUARY 2005 LOWĆINPUT HIGHĆEFFICIENCY SYNCHRONOUS BUCK CONTROLLER FEATURES D Operating Input Voltage 2.25 V to 5.5 V D Output Voltage as Low as 0.7 V D 1% Internal 0.7 V Reference D Predictive Gate Drivet N-Channel MOSFET

Contextual Info: TPS40007 TPS40009 SLUS589B− NOVEMBER 2003 − REVISED FEBRUARY 2005 LOWĆINPUT HIGHĆEFFICIENCY SYNCHRONOUS BUCK CONTROLLER FEATURES D Operating Input Voltage 2.25 V to 5.5 V D Output Voltage as Low as 0.7 V D 1% Internal 0.7 V Reference D Predictive Gate Drivet N-Channel MOSFET